IS61C3216-10K [ICSI]

32K x 16 HIGH-SPEED CMOS STATIC RAM; 32K ×16高速CMOS静态RAM
IS61C3216-10K
型号: IS61C3216-10K
厂家: INTEGRATED CIRCUIT SOLUTION INC    INTEGRATED CIRCUIT SOLUTION INC
描述:

32K x 16 HIGH-SPEED CMOS STATIC RAM
32K ×16高速CMOS静态RAM

内存集成电路 静态存储器 光电二极管
文件: 总8页 (文件大小:434K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
IS61C3216  
32K x 16 HIGH-SPEED CMOS STATIC RAM  
FEATURES  
DESCRIPTION  
1
The ICSI IS61C3216 is a high-speed, 512K static RAM  
organized as 32,768 words by 16 bits. It is fabricated using  
ICSI's high-performance CMOS technology. This highly reli-  
able process coupled with innovative circuit design techniques,  
yields fast access times with low power consumption.  
• High-speed access time: 10, 12, 15, and 20 ns  
• CMOS low power operation  
— 450 mW (typical) operating  
— 250 µW (typical) standby  
2
• TTL compatible interface levels  
• Single 5V ± 10% power supply  
• I/O compatible with 3.3V device  
• Fully static operation: no clock or refresh  
required  
• Three state outputs  
• Industrial temperature available  
When CE is HIGH (deselected), the device assumes a standby  
mode at which the power dissipation can be reduced down with  
CMOS input levels.  
3
Easy memory expansion is provided by using Chip Enable and  
Output Enable inputs, CE and OE. The active LOW Write  
Enable (WE) controls both writing and reading of the memory.  
A data byte allows Upper Byte (UB) and Lower Byte (LB)  
access.  
4
• Available in 44-pin 400mil SOJ package and  
44-pin TSOP-2  
5
The IS61C3216 is packaged in the JEDEC standard 44-pin  
400mil SOJ and 44-pin 400mil TSOP-2.  
FUNCTIONAL BLOCK DIAGRAM  
6
7
32K x 16  
MEMORY ARRAY  
A0-A14  
DECODER  
8
VCC  
GND  
9
I/O0-I/O7  
Lower Byte  
I/O  
DATA  
CIRCUIT  
COLUMN I/O  
I/O8-I/O15  
Upper Byte  
10  
11  
12  
CE  
OE  
WE  
CONTROL  
CIRCUIT  
UB  
LB  
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors  
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.  
Integrated Circuit Solution Inc.  
1
SR008-0B  
IS61C3216  
PIN CONFIGURATIONS  
44-Pin SOJ  
44-Pin TSOP-2  
NC  
A14  
A13  
A12  
A11  
CE  
1
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
A0  
2
A1  
NC  
A14  
A13  
A12  
A11  
CE  
I/O0  
I/O1  
I/O2  
I/O3  
Vcc  
GND  
I/O4  
I/O5  
I/O6  
I/O7  
WE  
A10  
A9  
1
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
A0  
A1  
A2  
OE  
UB  
LB  
I/O15  
I/O14  
I/O13  
I/O12  
GND  
Vcc  
I/O11  
I/O10  
I/O9  
I/O8  
NC  
3
A2  
2
4
OE  
3
4
5
UB  
5
6
LB  
6
I/O0  
I/O1  
I/O2  
I/O3  
Vcc  
GND  
I/O4  
I/O5  
I/O6  
I/O7  
WE  
A10  
A9  
7
I/O15  
I/O14  
I/O13  
I/O12  
GND  
Vcc  
I/O11  
I/O10  
I/O9  
I/O8  
NC  
7
8
8
9
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
A3  
A4  
A5  
A6  
A3  
A4  
A8  
A7  
NC  
A8  
A5  
NC  
A7  
A6  
NC  
NC  
PIN DESCRIPTIONS  
LB  
Lower-byte Control (I/O0-I/O7)  
Upper-byte Control (I/O8-I/O15)  
No Connection  
A0-A14  
I/O0-I/O15  
CE  
Address Inputs  
UB  
Data Inputs/Outputs  
Chip Enable Input  
Output Enable Input  
Write Enable Input  
NC  
Vcc  
GND  
Power  
OE  
Ground  
WE  
TRUTH TABLE  
Mode  
WE  
CE  
OE  
LB  
UB  
I/O0-I/O7 I/O8-I/O15 Vcc Current  
Not Selected  
Output Disabled  
X
H
X
H
L
L
X
H
X
X
X
H
X
X
H
High-Z  
High-Z  
High-Z  
High-Z  
High-Z  
High-Z  
ISB1, ISB2  
ICC  
Read  
Write  
H
H
H
L
L
L
L
L
L
L
L
L
L
L
L
X
X
X
L
H
L
L
H
L
H
L
L
H
L
L
DOUT  
High-Z  
DOUT  
DIN  
High-Z  
DIN  
High-Z  
ICC  
ICC  
DOUT  
DOUT  
High-Z  
DIN  
DIN  
2
Integrated Circuit Solution Inc.  
SR008-0B  
IS61C3216  
ABSOLUTE MAXIMUM RATINGS(1)  
Symbol Parameter  
Note:  
1. Stress greater than those listed under  
ABSOLUTE MAXIMUM RATINGS  
may cause permanent damage to the  
device. This is a stress rating only and  
functional operation of the device at  
these or any other conditions above  
those indicated in the operational sec-  
tions of this specification is not implied.  
Exposure to absolute maximum rat-  
ing conditions for extended periods  
may affect reliability.  
Value  
–0.5 to +7.0  
–0.5 to +7.0  
–65 to +150  
1.5  
Unit  
V
V
°C  
W
mA  
VCC  
Supply Voltage with Respect to GND  
Terminal Voltage with Respect to GND  
Storage Temperature  
1
VTERM  
TSTG  
PT  
Power Dissipation  
IOUT  
DC Output Current (LOW)  
20  
2
OPERATING RANGE  
3
Range  
Commercial  
Ambient Temperature  
Speed  
VCC  
0°C to +70°C  
-10, -12  
5V ± 5%  
-15, -20 5V ± 10%  
Industrial  
–40°C to +85°C  
-12  
5V ± 5%  
4
-15, -20 5V ± 10%  
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)  
5
Symbol Parameter  
Test Conditions  
Min.  
2.4  
Max.  
Unit  
V
VOH  
VOL  
VIH  
VIL  
ILI  
Output HIGH Voltage  
VCC = Min., IOH = –4.0 mA  
Output LOW Voltage  
Input HIGH Voltage  
Input LOW Voltage(1)  
Input Leakage  
VCC = Min., IOL = 8.0 mA  
0.4  
V
6
2.2  
–0.5  
–2  
VCC + 0.5  
V
0.8  
2
V
GND < VIN < VCC  
µA  
µA  
7
ILO  
Output Leakage  
GND < VOUT < VCC, Outputs Disabled  
–2  
2
Notes:  
1. VIL (min.) = –3.0V for pulse width less than 10 ns.  
8
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)  
9
-10  
-12  
-15  
Min. Max.  
-20  
Min. Max. Unit  
Symbol Parameter  
Test Conditions  
VCC = Max.,  
IOUT = 0 mA, f = fMAX  
Min. Max. Min. Max.  
ICC  
Vcc Dynamic Operating  
Supply Current  
Com.  
Ind.  
300  
270  
300  
250  
270  
230 mA  
250  
10  
11  
12  
ISB1  
TTL Standby Current  
(TTL Inputs)  
VCC = Max.,  
VIN = VIH or VIL  
CE > VIH , f = 0  
Com.  
Ind.  
40  
40  
45  
40  
45  
40  
45  
mA  
ISB2  
CMOS Standby  
Current (CMOS Inputs)  
VCC = Max.,  
Com.  
Ind.  
5
5
10  
5
10  
5
10  
mA  
CE > VCC – 0.2V,  
VIN > VCC – 0.2V, or  
VIN  
< 0.2V, f = 0  
Note:  
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.  
Integrated Circuit Solution Inc.  
3
SR008-0B  
IS61C3216  
CAPACITANCE(1)  
Symbol  
CIN  
Parameter  
Input Capacitance  
Conditions  
VIN = 0V  
Max.  
6
Unit  
pF  
COUT  
Input/Output Capacitance  
VOUT = 0V  
8
pF  
Note:  
1. Tested initially and after any design or process changes that may affect these parameters.  
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)  
-10  
-12  
-15  
-20  
Symbol  
tRC  
Parameter  
Read Cycle Time  
Min. Max.  
Min. Max.  
Min. Max.  
Min. Max.  
Unit  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
10  
3
10  
10  
5
12  
3
12  
12  
5
15  
3
15  
15  
7
20  
3
20  
20  
8
tAA  
Address Access Time  
Output Hold Time  
CE Access Time  
tOHA  
tACE  
0
0
0
0
tDOE  
OE Access Time  
(2)  
tHZOE  
OE to High-Z Output  
OE to Low-Z Output  
CE to High-Z Output  
CE to Low-Z Output  
LB, UB Access Time  
LB, UB to High-Z Output  
LB, UB to Low-Z Output  
5
6
7
8
(2)  
tLZOE  
tHZCE  
0
5
0
6
0
7
8
(2  
0
0
0
0
(2)  
tLZCE  
tBA  
4
5
4
6
4
7
4
8
0
0
0
5
tHZB  
tLZB  
5
6
7
8
5
5
5
Notes:  
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of  
0 to 3.0V and output loading specified in Figure 1a.  
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.  
3. Not 100% tested.  
AC TEST CONDITIONS  
Parameter  
Input Pulse Level  
Input Rise and Fall Times  
Unit  
0V to 3.0V  
3 ns  
Input and Output Timing  
and Reference Level  
1.5V  
Output Load  
See Figures 1a and 1b  
AC TEST LOADS  
480  
480  
5V  
5V  
OUTPUT  
OUTPUT  
255 Ω  
255 Ω  
30 pF  
Including  
jig and  
5 pF  
Including  
jig and  
scope  
scope  
Figure 1a.  
Figure 1b.  
4
Integrated Circuit Solution Inc.  
SR008-0B  
IS61C3216  
AC WAVEFORMS  
READ CYCLE NO. 1(1,2) (Address Controlled) (CE = OE = VIL, UB or LB = VIL)  
1
t
RC  
ADDRESS  
2
t
AA  
t
OHA  
t
OHA  
DATA VALID  
DOUT  
PREVIOUS DATA VALID  
3
4
READ CYCLE NO. 2(1,3)  
t
RC  
5
ADDRESS  
OE  
t
AA  
t
OHA  
6
t
HZOE  
t
DOE  
LZOE  
ACE  
t
CE  
7
t
t
HZCE  
t
LZCE  
LB, UB  
8
t
BA  
t
HZB  
t
LZB  
HIGH-Z  
DOUT  
DATA VALID  
9
Notes:  
1. WE is HIGH for a Read Cycle.  
2. The device is continuously selected. OE, CE, UB, or LB = VIL.  
3. Address is valid prior to or coincident with CE LOW transition.  
10  
11  
12  
Integrated Circuit Solution Inc.  
5
SR008-0B  
IS61C3216  
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range)  
-10  
-12  
-15  
-20  
Symbol  
tWC  
Parameter  
Write Cycle Time  
Min. Max.  
Min. Max.  
Min. Max.  
Min. Max.  
Unit  
ns  
10  
12  
10  
10  
15  
11  
11  
20  
12  
12  
tSCE  
CE to Write End  
9
ns  
tAW  
Address Setup Time  
to Write End  
9
ns  
tHA  
Address Hold from Write End  
Address Setup Time  
1
0
5
1
0
6
1
0
7
1
0
8
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tSA  
tPWB  
tPWE  
tSD  
LB, UB Valid to End of Write  
WE Pulse Width  
9
10  
8
11  
10  
7
12  
11  
8
7
Data Setup to Write End  
Data Hold from Write End  
WE LOW to High-Z Output  
WE HIGH to Low-Z Output  
5
6
tHD  
0
0
0
0
(2)  
tHZWE  
1
1
1
1
(2)  
tLZWE  
Notes:  
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V  
and output loading specified in Figure 1a.  
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.  
3. The internal write time is defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals must be in valid states to  
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the  
rising or falling edge of the signal that terminates the write.  
6
Integrated Circuit Solution Inc.  
SR008-0B  
IS61C3216  
AC WAVEFORMS  
WRITE CYCLE NO. 1 (WE Controlled)(1,2)  
1
t
WC  
2
ADDRESS  
CE  
t
HA  
t
SCE  
3
t
PWB  
LB, UB  
t
AW  
4
t
PWE  
WE  
t
SA  
5
(1)  
WRITE  
D
t
SD  
t
HD  
6
IN  
t
HZWE  
t
LZWE  
HIGH-Z  
HIGH-Z  
DOUT  
UNDEFINED  
UNDEFINED  
7
Notes:  
8
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the CE and WE inputs and at least  
one of the LB and UB inputs being in the LOW state.  
2. WRITE = (CE) [ (LB) = (UB) ] (WE).  
9
10  
11  
12  
Integrated Circuit Solution Inc.  
7
SR008-0B  
IS61C3216  
ORDERING INFORMATION  
Commercial Range: 0°C to +70°C  
ORDERING INFORMATION  
Industrial Range: –40°C to +85°C  
Speed (ns) Order Part No.  
Package  
Speed (ns) Order Part No.  
Package  
10  
12  
15  
20  
IS61C3216-10T 400mil TSOP-2  
IS61C3216-10K 400mil SOJ  
12  
15  
20  
IS61C3216-12TI 400mil TSOP-2  
IS61C3216-12KI 400mil SOJ  
IS61C3216-12T 400mil TSOP-2  
IS61C3216-12K 400mil SOJ  
IS61C3216-15TI 400mil TSOP-2  
IS61C3216-15KI 400mil SOJ  
IS61C3216-15T 400mil TSOP-2  
IS61C3216-15K 400mil SOJ  
IS61C3216-20TI 400mil TSOP-2  
IS61C3216-20KI 400mil SOJ  
IS61C3216-20T 400mil TSOP-2  
IS61C3216-20K 400mil SOJ  
Integrated Circuit Solution Inc.  
HEADQUARTER:  
NO.2, TECHNOLOGY RD. V, SCIENCE-BASED INDUSTRIAL PARK,  
HSIN-CHU, TAIWAN, R.O.C.  
TEL: 886-3-5780333  
Fax: 886-3-5783000  
BRANCH OFFICE:  
7F, NO. 106, SEC. 1, HSIN-TAI 5TH ROAD,  
HSICHIH TAIPEI COUNTY, TAIWAN, R.O.C.  
TEL: 886-2-26962140  
FAX: 886-2-26962252  
http://www.icsi.com.tw  
8
Integrated Circuit Solution Inc.  
SR008-0B  

相关型号:

IS61C3216-10KI

Standard SRAM, 64KX8, 10ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44
ISSI

IS61C3216-10T

32K x 16 HIGH-SPEED CMOS STATIC RAM
ISSI

IS61C3216-10T

32K x 16 HIGH-SPEED CMOS STATIC RAM
ICSI

IS61C3216-10TI

Standard SRAM, 64KX8, 10ns, CMOS, PDSO44, PLASTIC, TSOP2-44
ISSI

IS61C3216-12K

32K x 16 HIGH-SPEED CMOS STATIC RAM
ISSI

IS61C3216-12K

32K x 16 HIGH-SPEED CMOS STATIC RAM
ICSI

IS61C3216-12KI

32K x 16 HIGH-SPEED CMOS STATIC RAM
ISSI

IS61C3216-12KI

32K x 16 HIGH-SPEED CMOS STATIC RAM
ICSI

IS61C3216-12T

32K x 16 HIGH-SPEED CMOS STATIC RAM
ISSI

IS61C3216-12T

32K x 16 HIGH-SPEED CMOS STATIC RAM
ICSI

IS61C3216-12TI

32K x 16 HIGH-SPEED CMOS STATIC RAM
ISSI

IS61C3216-12TI

32K x 16 HIGH-SPEED CMOS STATIC RAM
ICSI