7005L17PFGB [IDT]

HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM;
7005L17PFGB
型号: 7005L17PFGB
厂家: INTEGRATED DEVICE TECHNOLOGY    INTEGRATED DEVICE TECHNOLOGY
描述:

HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM

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中文:  中文翻译
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HIGH-SPEED  
IDT7005S/L  
8K x 8 DUAL-PORT  
STATIC RAM  
Features  
True Dual-Ported memory cells which allow simultaneous  
reads of the same memory location  
High-speed access  
M/S = H for BUSY output flag on Master,  
M/S = L for BUSY input on Slave  
Interrupt Flag  
– Military:20/25/35/55/70ns(max.)  
– Industrial:20/35/55ns(max.)  
– Commercial:15/17/20/25/35/55ns(max.)  
Low-power operation  
On-chip port arbitration logic  
Full on-chip hardware support of semaphore signaling  
between ports  
Fully asynchronous operation from either port  
Devices are capable of withstanding greater than 2001V  
electrostatic discharge  
– IDT7005S  
Active:750mW(typ.)  
Standby: 5mW (typ.)  
Battery backup operation—2V data retention  
TTL-compatible, single 5V (±10%) power supply  
Available in 68-pin PGA, PLCC and a 64-pin thin quad  
flatpack  
– IDT7005L  
Active:700mW(typ.)  
Standby: 1mW (typ.)  
IDT7005 easily expands data bus width to 16 bits or more  
using the Master/Slave select when cascading more than  
one device  
Industrial temperature range (-40°C to +85°C) is available for  
selectedspeeds  
Green parts available, see ordering information  
FunctionalBlockDiagram  
OER  
OEL  
CEL  
CER  
R/W  
L
R/WR  
I/O0L- I/O7L  
I/O0R-I/O7R  
I/O  
I/O  
Control  
Control  
BUSY (1,2)  
L
(1,2)  
BUSY  
R
A
12R  
0R  
A
12L  
Address  
Decoder  
MEMORY  
ARRAY  
Address  
Decoder  
A
0L  
A
13  
13  
ARBITRATION  
INTERRUPT  
SEMAPHORE  
LOGIC  
CE  
OE  
L
L
CE  
OE  
R/W  
R
R
R
R/W  
L
SEM  
R
SEM  
L
M/S  
(2)  
(2)  
INTR  
INTL  
2738 drw 01  
NOTES:  
1. (MASTER): BUSY is output; (SLAVE): BUSY is input.  
2. BUSY outputs and INT outputs are non-tri-stated push-pull.  
JUNE 2016  
1
DSC 2738/18  
©2016 Integrated Device Technology, Inc.  
IDT7005S/L  
High-Speed 8K x 8 Dual-Port Static RAM  
Military, Industrial and Commercial Temperature Ranges  
Description  
The IDT7005 is a high-speed 8K x 8 Dual-Port Static RAM. The  
IDT7005isdesignedtobeusedasastand-alone64K-bitDual-PortRAM  
or as a combination MASTER/SLAVE Dual-Port RAM for 16-bit-or-  
more word systems. Using the IDT MASTER/SLAVE Dual-Port RAM  
approach in 16-bit or wider memory system applications results in full-  
speed,error-freeoperationwithouttheneedforadditionaldiscretelogic.  
This device provides two independent ports with separate control,  
address,andI/Opinsthatpermitindependent,asynchronousaccessfor  
reads or writes to any location in memory. An automatic power down  
featurecontrolledbyCEpermitstheon-chipcircuitryofeachporttoenter  
a very low standby power mode.  
Fabricated using CMOS high-performance technology, these de-  
vicestypicallyoperateononly750mWofpower.Low-power(L)versions  
offerbatterybackupdataretentioncapabilitywithtypicalpowerconsump-  
tionof500µWfroma2Vbattery.  
The IDT7005 is packaged in a ceramic 68-pin PGA, 68-pin PLCC  
and a 64-pin thin quad flatpack, (TQFP). Military grade product is  
manufacturedincompliancewithMIL-PRF-38535QMLmakingitideally  
suitedtomilitarytemperatureapplicationsdemandingthehighestlevelof  
performanceandreliability.  
PinConfigurations(1,2,3)  
25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10  
I/O7R  
N/C  
27  
9
8
I/O1L  
I/O0L  
N/C  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
OE  
R/W  
SEM  
CE  
R
R
R
R
7
6
OE  
R/W  
SEM  
CE  
L
5
L
4
L
N/C  
N/C  
GND  
3
L
2
7005J  
J68(4)  
N/C  
N/C  
1
A12R  
A11R  
A10R  
68  
67  
66  
65  
64  
63  
62  
61  
VCC  
A
A
A
A
A
A
12L  
11L  
10L  
9L  
A
A
A
A
A
9R  
8R  
7R  
6R  
5R  
8L  
7L  
A6L  
44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60  
2738 drw 02  
44  
46 45  
43 42 41 40 39 38 37 36 35 34 33  
32  
47  
48  
49  
A
5L  
6L  
A
5R  
6R  
A
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
61  
62  
63  
64  
31  
30  
29  
28  
27  
26  
A
A
7L  
8L  
9L  
A
7R  
8R  
9R  
A
A
A
A
A10L  
A10R  
A11R  
A12R  
A
A
11L  
12L  
7005  
PN64(4)  
25  
VCC  
24  
GND  
N/C  
N/C  
23  
22  
21  
20  
19  
18  
17  
CE  
SEM  
R/W  
L
L
L
CE  
SEM  
R/W  
OE  
R
R
R
OE  
L
R
NOTES:  
I/O0L  
I/O1L  
I/O7R  
I/O6R  
1. All VCC pins must be connected to power supply.  
2. All GND pins must be connected to ground supply.  
3. J68packagebodyisapproximately.95inx.95inx.12in.  
PN64packagebodyisapproximately14mmx14mmx1.4mm.  
4. Thispackagecodeisusedtoreferencethepackagediagram.  
9
7 8  
1
2
3
4
5
6
10 11 12 13 14 15 16  
2738 drw 03  
6.242  
IDT7005S/L  
High-Speed 8K x 8 Dual-Port Static RAM  
Military, Industrial and Commercial Temperature Ranges  
Pin Configurations(1,2,3) (con't.)  
51  
A
50  
48  
A
46  
A
44  
0L BUSY  
42  
M/S  
40  
INT  
38  
36  
11  
10  
09  
08  
07  
5L  
A4L  
2L  
1L  
L
R
A
1R  
A3R  
53  
A
52  
49  
47  
A
45  
INT  
43  
GND  
41  
BUSYR  
39  
37  
35  
34  
L
A4R  
7L  
9L  
A3L  
A
0R  
A
2R  
A
5R  
6R  
8R  
A
6L  
8L  
55  
A
54  
32  
33  
A
A7R  
A
57  
A
56  
30  
31  
A
A9R  
A10L  
11L  
59  
58  
A
28  
29  
A10R  
12L  
A11R  
V
CC  
7005G  
(4,5)  
61  
60  
26  
27  
G68  
06  
05  
04  
03  
02  
01  
N/C  
GND  
A
12R  
N/C  
63  
SEM  
62  
24  
N/C  
25  
N/C  
L
CEL  
65  
64  
22  
23  
SEM  
R
CE  
21  
R
OEL  
R/W  
66  
L
67  
I/O0L  
20  
R/W  
R
OE  
R
N/C  
1
3
5
7
9
68  
I/O1L  
11  
I/O1R  
13  
V
15  
18  
I/O7R  
19  
N/C  
I/O2L  
GND  
CC I/O4R  
I/O4L GND I/O7L  
2
4
6
8
10  
12  
14  
16  
17  
I/O3L  
I/O6L  
I/O5L  
VCC I/O0R I/O2R I/O3R I/O5R I/O6R  
A
B
C
D
E
F
G
H
J
K
L
INDEX  
2738 drw 04  
NOTES:  
1. All VCC pins must be connected to power supply.  
2. All GND pins must be connected to ground supply.  
3. Package body is approximately 1.18in x 1.18in x .16in.  
PinNames  
Left Port  
Right Port  
Names  
4. This package code is used to reference the package diagram.  
5. This text does not indicate oriention of the actual part-marking  
Chip Enable  
CE  
R/W  
OE  
L
CE  
R/W  
OE  
R
L
R
Read/Write Enable  
Output Enable  
Address  
L
R
A
0L - A12L  
A
0R - A12R  
I/O0R - I/O7R  
SEM  
INT  
BUSY  
M/S  
I/O0L - I/O7L  
SEM  
INT  
BUSY  
Data Input/Output  
Semaphore Enable  
Interrupt Flag  
Busy Flag  
L
R
L
R
L
R
Master or Slave Select  
Power  
V
CC  
GND  
Ground  
2738 tbl 01  
6.42  
3
IDT7005S/L  
High-Speed 8K x 8 Dual-Port Static RAM  
Military, Industrial and Commercial Temperature Ranges  
Truth Table I: Non-Contention Read/Write Control  
Inputs(1)  
R/W  
Outputs  
I/O0-7  
Mode  
CE  
H
L
OE  
X
SEM  
H
X
L
High-Z  
DATAIN  
Deselected: Power-Down  
Write to Memory  
X
H
L
H
X
L
H
DATAOUT Read Memory  
High-Z Outputs Disabled  
X
H
X
2738 tbl 02  
NOTE:  
1. A0L – A12L is not equal to A0R – A12R  
Truth Table II: Semaphore Read/Write Control(1)  
Inputs(1)  
R/W  
Outputs  
I/O0-7  
Mode  
CE  
H
OE  
L
SEM  
H
X
L
L
L
DATAOUT Read in Semaphore Flag Data Out  
H
X
DATAIN  
____  
Write I/Oo into Semaphore Flag  
Not Allowed  
L
X
2738 tbl 03  
NOTE:  
1. There are eight semaphore flags written to via I/O0 and read from I/O0 - I/O7. These eight semaphores are addressed by A0 - A2.  
AbsoluteMaximumRatings(1)  
MaximumOperatingTemperature  
andSupplyVoltage(1,2)  
Commercial  
& Industrial  
Symbol  
Rating  
Military  
Unit  
Ambient  
(2)  
Grade  
Temperature  
-55OC to+125OC  
0OC to +70OC  
-40OC to +85OC  
GND  
0V  
Vcc  
V
TERM  
Terminal Voltage  
with Respect to  
GND  
-0.5 to +7.0  
-0.5 to +7.0  
V
Military  
5.0V  
5.0V  
5.0V  
+
+
+
10%  
10%  
10%  
Temperature Under  
Bias  
-55 to +125  
-65 to +150  
50  
-65 to +135  
-65 to +150  
50  
oC  
oC  
Commercial  
Industrial  
0V  
T
BIAS  
OV  
TSTG  
Storage  
2738 tbl 05  
Te m p e rature  
NOTES:  
1. This is the parameter TA. This is the "instant on" case temperature.  
mA  
IOUT  
DC Output Current  
2
Industrial temperature: for specific speeds, packages and powers contact  
your sales office.  
2738 tbl 04  
NOTES:  
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS  
maycausepermanentdamagetothedevice.Thisisastressratingonlyandfunctional  
operation of the device at these or any other conditions above  
thoseindicatedintheoperationalsectionsofthisspecificationisnotimplied.Exposureto  
absolutemaximumratingconditionsforextendedperiodsmayaffectreliability.  
2. VTERMmustnotexceedVcc+10%formorethan25%ofthecycletimeor10%maximum,  
andislimitedto<20mAfortheperiodofVTERM>Vcc+10%.  
RecommendedDCOperating  
Conditions  
Symbol  
Parameter  
Supply Voltage  
Min.  
4.5  
Typ.  
Max. Unit  
V
CC  
5.0  
5.5  
V
V
V
GND  
Ground  
0
0
0
Capacitance(1) (TA = +25°C, f = 1.0MHz)  
V
IH  
Input High Voltage  
Input Low Voltage  
2.2  
-0.5(1)  
6.0(2)  
0.8  
____  
Symbol  
Parameter  
Input Capacitance  
Output Capacitance  
Conditions(2)  
Max.  
9
Unit  
____  
V
IL  
V
CIN  
V
IN = 3dV  
pF  
2738 tbl 06  
NOTES:  
1. VIL > -1.5V for pulse width less than 10ns.  
2. VTERM must not exceed Vcc + 10%.  
COUT  
V
OUT = 3dV  
10  
pF  
2738 tbl 07  
NOTES:  
1. Theseparametersaredeterminedbydevicecharacterizationbutarenotproductiontested  
(TQFPPackageonly).  
2. 3dVreferencestheinterpolatedcapacitancewhentheinputandoutputsignalsswitchfrom  
0Vto3Vorfrom3Vto0V.  
6.442  
IDT7005S/L  
High-Speed 8K x 8 Dual-Port Static RAM  
Military, Industrial and Commercial Temperature Ranges  
DC Electrical Characteristics Over the 0perating  
Temperature and Supply Voltage Range (VCC = 5.0V ± 10%)  
7005S  
7005L  
Symbol  
|ILI|  
Parameter  
Input Leakage Current(1)  
Output Leakage Current  
Output Low Voltage  
Test Conditions  
VCC = 5.5V, VIN = 0V to VCC  
CE = VIH, VOUT = 0V to VCC  
IOL = +4mA  
Min.  
___  
Max.  
10  
Min.  
___  
Max.  
Unit  
µA  
µA  
V
5
5
___  
___  
___  
___  
|ILO|  
10  
VOL  
0.4  
0.4  
___  
___  
VOH  
Output High Voltage  
IOH = -4mA  
2.4  
2.4  
V
2738 tbl 08  
NOTE:  
1. At Vcc < 2.0V input leakages are undefined.  
Data Retention Characteristics Over All Temperature Ranges  
(L Version Only) (VLC = 0.2V, VHC = VCC - 0.2V)  
Symbol  
Parameter  
Test Condition  
Min.  
Typ.(1)  
___  
Max.  
___  
Unit  
V
V
DR  
V
CC for Data Retention  
V
CC = 2V  
CE > VHC  
IN > VHC or < VLC  
SEM > VHC  
2.0  
___  
ICCDR  
Data Retention Current  
Mil. & Ind.  
Com'l.  
100  
4000  
µA  
___  
V
100  
___  
1500  
___  
(3)  
tCDR  
Chip Deselect to Data Retention Time  
Operation Recovery Time  
0
ns  
(3)  
(2)  
___  
___  
tR  
tRC  
ns  
2738 tbl 09  
NOTES:  
1. TA = +25°C, VCC = 2V, and are not production tested.  
2. tRC = Read Cycle Time  
3. This parameter is guaranteed by characterization, but is not production tested.  
Data Retention Waveform  
DATA RETENTION MODE  
VDR >  
4.5V  
4.5V  
VCC  
2V  
tCDR  
tR  
VDR  
CE  
VIH  
VIH  
2738 drw 05  
6.42  
5
IDT7005S/L  
High-Speed 8K x 8 Dual-Port Static RAM  
Military, Industrial and Commercial Temperature Ranges  
DC Electrical Characteristics Over the Operating  
Temperature and Supply Voltage Range(1) (VCC = 5.0V ± 10%)  
7005X15  
7005X17  
7005X20  
Com'l, Ind  
& Military  
7005X25  
Com'l &  
Military  
Com'l Only  
Com'l Only  
Symbol  
Parameter  
Test Condition  
Version  
COM'L  
Typ.(2)  
Max.  
Typ.(2)  
Max.  
Typ.(2)  
Max.  
Typ.(2)  
Max.  
Unit  
ICC  
Dynamic Operating Current  
(Both Ports Active)  
S
L
170  
310  
170  
310  
160  
150  
290  
240  
155  
145  
265  
220  
mA  
CE = VIL, Outputs Disabled  
SEM = VIH  
160  
260  
160  
260  
(3)  
f = fMAX  
____  
____  
____  
____  
____  
____  
____  
____  
MIL &  
IND  
S
L
160  
150  
370  
320  
155  
145  
340  
280  
I
SB1  
Standby Current  
(Both Ports - TTL  
Level Inputs)  
COM'L  
S
L
20  
10  
____  
____  
60  
60  
____  
____  
20  
10  
____  
____  
60  
50  
____  
____  
20  
10  
60  
50  
16  
10  
60  
50  
mA  
mA  
CE  
L
= CE  
(3)  
R
= VIH  
SEM  
R
= SEM  
L
= VIH  
f = fMAX  
MIL &  
IND  
S
L
20  
10  
90  
70  
16  
10  
80  
65  
(5)  
ISB2  
Standby Current  
(One Port - TTL  
Level Inputs)  
COM'L  
S
L
105  
95  
____  
____  
190  
160  
105  
95  
____  
____  
190  
160  
95  
85  
180  
150  
90  
80  
170  
140  
CE"A" = VIL and CE"B" = VIH  
Active(3P) ort Outputs Disabled  
f=fMAX  
____  
____  
____  
____  
MIL &  
IND  
S
L
95  
85  
240  
210  
90  
80  
215  
180  
SEM  
R
= SEM  
L
= VIH  
I
SB3  
Full Standby Current (Both  
Ports - All CMOS Level  
Inputs)  
Both Ports CE  
L
and  
COM'L  
S
L
1.0  
0.2  
____  
____  
15  
5
____  
____  
1.0  
0.2  
____  
____  
15  
5
____  
____  
1.0  
0.2  
15  
5
1.0  
0.2  
15  
5
mA  
mA  
CE  
R
> VCC - 0.2V  
V
V
IN > VCC - 0.2V or  
IN < 0.2V, f = 0(4)  
MIL &  
IND  
S
L
1.0  
0.2  
30  
10  
1.0  
0.2  
30  
10  
SEM  
R
= SEM  
L
> VCC - 0.2V  
ISB4  
Full Standby Current  
(One Port - All  
COM'L  
S
L
100  
90  
170  
140  
100  
90  
170  
140  
90  
80  
155  
130  
85  
75  
145  
120  
CE"A" < 0.2V and  
CE"B" > VCC - 0.2V(5)  
CMOS Level Inputs)  
SEMR = SEML > VCC - 0.2V  
____  
____  
____  
____  
____  
____  
____  
____  
MIL &  
IND  
S
L
90  
80  
225  
200  
85  
75  
200  
170  
V
IN > VCC - 0.2V or VIN < 0.2V  
Active Port Outputs Disabled  
(3)  
f = fMAX  
2738 tbl 10  
7005X35  
7005X55  
7005X70  
Com'l, Ind  
& Military  
Com'l, Ind  
& Military  
Military  
Only  
Symbol  
Parameter  
Test Condition  
Version  
Typ.(2)  
Max.  
Typ.(2)  
Max.  
Typ.(2)  
Max.  
Unit  
____  
____  
____  
____  
ICC  
Dynamic Operating  
Current  
COM'L  
S
L
150  
140  
250  
210  
150  
140  
250  
210  
mA  
CE = VIL, Outputs Disabled  
SEM = VIH  
(3)  
(Both Ports Active)  
f = fMAX  
MIL &  
IND  
S
L
150  
140  
300  
250  
150  
140  
300  
250  
140  
130  
300  
250  
____  
____  
____  
____  
I
SB1  
Standby Current  
(Both Ports - TTL  
Level Inputs)  
COM'L  
S
L
13  
10  
60  
50  
13  
10  
60  
50  
mA  
mA  
CE  
SEM  
f = fMAX  
L
= CE  
(3)  
R
= VIH  
= VIH  
R
= SEM  
L
MIL &  
IND  
S
L
13  
10  
80  
65  
13  
10  
80  
65  
10  
8
____  
____  
80  
65  
____  
____  
(5)  
ISB2  
Standby Current  
(One Port - TTL  
Level Inputs)  
COM'L  
S
L
85  
75  
155  
130  
85  
75  
155  
130  
CE"A" = VIL and CE"B" = VIH  
Active(3P) ort Outputs Disabled  
f=fMAX  
85  
75  
MIL &  
IND  
S
L
190  
160  
85  
75  
190  
160  
80  
70  
190  
160  
SEMR  
= SEM  
L
= VIH  
____  
____  
____  
____  
I
SB3  
Full Standby Current  
(Both Ports - All  
Both Ports CE  
L
and  
COM'L  
S
L
1.0  
0.2  
15  
5
1.0  
0.2  
15  
5
mA  
mA  
CER  
> VCC - 0.2V  
CMOS Level Inputs)  
V
V
IN > VCC - 0.2V or  
IN < 0.2V, f = 0(4)  
= SEM > VCC - 0.2V  
MIL &  
IND  
S
L
1.0  
0.2  
30  
10  
1.0  
0.2  
30  
10  
1.0  
0.2  
____  
____  
30  
10  
SEM  
R
L
____  
____  
ISB4  
Full Standby Current  
(One Port - All  
COM'L  
S
L
80  
70  
135  
110  
80  
70  
135  
110  
CE"A" < 0.2V and  
CE"B" > VCC - 0.2V(5)  
CMOS Level Inputs)  
SEMR = SEML > VCC - 0.2V  
MIL &  
IND  
S
L
80  
70  
175  
150  
80  
70  
175  
150  
75  
65  
175  
150  
V
IN > VCC - 0.2V or VIN < 0.2V  
Active Port Outputs Disabled  
(3)  
f = fMAX  
2738 tbl 11  
NOTES:  
1. 'X' in part number indicates power rating (S or L)  
2. VCC = 5V, TA = +25°C and are not production tested. ICC DC = 120mA (typ)  
3. At f = fMAX, address and I/O'S are cycling at the maximum frequency read cycle of 1/tRC, and using “AC Test Conditions” of input levels of GND to 3V.  
4. f = 0 means no address or control lines change.  
5. Port "A" may be either left or right port. Port "B" is the port opposite port "A".  
6.642  
IDT7005S/L  
High-Speed 8K x 8 Dual-Port Static RAM  
Military, Industrial and Commercial Temperature Ranges  
5V  
5V  
AC Test Conditions  
Input Pulse Levels  
Input Rise/Fall Times  
Input Timing Reference Levels  
Output Reference Levels  
Output Load  
GND to 3.0V  
5ns Max.  
1.5V  
1.5V  
Figures 1 and 2  
1250  
1250Ω  
DATAOUT  
BUSY  
INT  
DATAOUT  
5pF*  
775Ω  
30pF  
775Ω  
2738 tbl 12  
2738 drw 06  
Figure 1. AC Output Test Load  
Figure 2. Output Test Load  
(For tLZ, tHZ, tWZ, tOW)  
*Including scope and jig  
AC Electrical Characteristics Over the  
OperatingTemperatureandSupplyVoltageRange(4)  
7005X15  
7005X17  
7005X20  
7005X25  
Com'l &  
Military  
Com'l Only  
Com'l Only  
Com'l, Ind  
& Military  
Symbol  
Parameter  
Min.  
Max.  
Min.  
Max.  
Min.  
Max.  
Min.  
Max.  
Unit  
READ CYCLE  
____  
____  
____  
____  
t
RC  
AA  
ACE  
AOE  
OH  
LZ  
HZ  
PU  
PD  
SOP  
SAA  
Read Cycle Time  
15  
____  
17  
____  
20  
____  
25  
____  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
t
Address Access Time  
Chip Enable Access Time(3)  
Output Enable Access Time  
15  
15  
17  
17  
20  
20  
25  
25  
____  
____  
____  
____  
____  
____  
____  
____  
t
t
10  
____  
10  
____  
12  
____  
13  
____  
t
Output Hold from Address Change  
Output Low-Z Time(1,2)  
Output High-Z Time(1,2)  
Chip Enable to Power Up Time(2,5)  
Chip Disable to Power Down Time(2,5)  
Semaphore Flag Update Pulse (OE or SEM)  
Semaphore Address Access Time  
3
3
3
3
____  
____  
____  
____  
t
3
____  
3
____  
3
____  
3
____  
t
10  
____  
10  
____  
12  
____  
15  
____  
t
0
____  
0
____  
0
____  
0
____  
t
15  
____  
17  
____  
20  
____  
25  
____  
t
10  
____  
10  
____  
10  
____  
10  
____  
t
15  
17  
20  
25  
ns  
2738 tbl 13a  
7005X35  
7005X55  
IDT7005X70  
Military  
Only  
Com'l, Ind  
& Military  
Com'l, Ind  
& Military  
Symbol  
READ CYCLE  
Parameter  
Min.  
Max.  
Min.  
Max.  
Min.  
Max.  
Unit  
____  
____  
____  
t
RC  
AA  
ACE  
AOE  
OH  
LZ  
HZ  
PU  
PD  
SOP  
SAA  
Read Cycle Time  
35  
____  
55  
____  
70  
____  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
t
Address Access Time  
35  
35  
55  
55  
70  
70  
Chip Enable Access Time(3)  
Output Enable Access Time  
Output Hold from Address Change  
Output Low-Z Time(1,2)  
Output High-Z Time(1,2)  
Chip Enable to Power Up Time(2,5)  
Chip Disable to Power Down Time(2,5)  
____  
____  
____  
____  
____  
____  
t
t
20  
____  
30  
____  
35  
____  
t
3
3
3
____  
____  
____  
t
3
____  
3
____  
3
____  
t
15  
____  
25  
____  
30  
____  
t
0
____  
0
____  
0
____  
t
35  
____  
50  
____  
50  
____  
t
Semaphore Flag Update Pulse (OE or SEM)  
Semaphore Address Access Time  
15  
____  
15  
____  
15  
____  
t
35  
55  
70  
ns  
2738 tbl 13b  
NOTES:  
1. Transition is measured 0mV from Low or High impedance voltage with load (Figures 1 and 2).  
2. This parameter is guaranteed but not production tested.  
3. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL.  
4. 'X' in part number indicates power rating (S or L).  
6.42  
7
IDT7005S/L  
High-Speed 8K x 8 Dual-Port Static RAM  
Military, Industrial and Commercial Temperature Ranges  
Waveform of Read Cycles(5)  
tRC  
ADDR  
(4)  
t
t
AA  
(4)  
ACE  
CE  
OE  
(4)  
tAOE  
R/W  
(1)  
LZ  
tOH  
t
VALID DATA(4)  
DATAOUT  
(2)  
HZ  
t
BUSYOUT  
(3,4)  
tBDD  
2738 drw 07  
NOTES:  
1. Timing depends on which signal is asserted last, OE or CE.  
2. Timing depends on which signal is de-asserted first CE or OE.  
3. tBDD delay is required only in cases where the opposite port is completing a write operation to the same address location. For simultaneous read operations BUSY  
has no relation to valid output data.  
4. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA or tBDD.  
5. SEM = VIH.  
Timing of Power-Up Power-Down  
CE  
tPU  
tPD  
ICC  
ISB  
,
2738 drw 08  
6.842  
IDT7005S/L  
High-Speed 8K x 8 Dual-Port Static RAM  
Military, Industrial and Commercial Temperature Ranges  
AC Electrical Characteristics Over the  
OperatingTemperatureandSupplyVoltage(5)  
7005X15  
7005X17  
Com'l Only  
7005X20  
Com'l, Ind  
& Military  
7005X25  
Com'l &  
Military  
Com'l Only  
Symbol  
Parameter  
Min.  
Max.  
Min.  
Max.  
Min.  
Max.  
Min.  
Max.  
Unit  
WRITE CYCLE  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
t
WC  
EW  
AW  
AS  
WP  
WR  
DW  
HZ  
DH  
WZ  
OW  
SWRD  
SPS  
Write Cycle Time  
15  
12  
12  
0
17  
12  
12  
0
20  
15  
15  
0
25  
20  
20  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
t
Chip Enable to End-of-Write(3)  
Address Valid to End-of-Write  
Address Set-up Time(3)  
t
t
t
Write Pulse Width  
12  
0
12  
0
15  
0
20  
0
t
Write Recovery Time  
t
Data Valid to End-of-Write  
Output High-Z Time(1,2)  
Data Hold Time(4)  
Write Enable to Output in High-Z(1,2)  
Output Active from End-of-Write(1,2,4)  
SEM Flag Write to Read Time  
SEM Flag Contention Window  
10  
____  
10  
____  
15  
____  
15  
____  
t
10  
____  
10  
____  
12  
____  
15  
____  
t
0
____  
0
____  
0
____  
0
____  
t
10  
____  
10  
____  
12  
____  
15  
____  
t
0
5
5
0
5
5
0
5
5
0
5
5
____  
____  
____  
____  
____  
____  
____  
____  
t
t
ns  
2738 tbl 14a  
7005X35  
7005X55  
7005X70  
Military Only  
Com'l, Ind  
& Military  
Com'l, Ind  
& Military  
Symbol  
WRITE CYCLE  
Parameter  
Min.  
Max.  
Min.  
Max.  
Min.  
Max.  
Unit  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
t
WC  
EW  
AW  
AS  
WP  
WR  
DW  
HZ  
DH  
WZ  
OW  
SWRD  
SPS  
Write Cycle Time  
35  
30  
30  
0
55  
45  
45  
0
70  
50  
50  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
t
Chip Enable to End-of-Write(3)  
Address Valid to End-of-Write  
Address Set-up Time(3)  
Write Pulse Width  
t
t
t
25  
0
40  
0
50  
0
t
Write Recovery Time  
Data Valid to End-of-Write  
Output High-Z Time(1,2)  
Data Hold Time(4)  
t
15  
____  
30  
____  
40  
____  
t
15  
____  
25  
____  
30  
____  
t
0
____  
0
____  
0
____  
(1,2)  
t
Write Enable to Output in High-Z  
15  
____  
25  
____  
30  
____  
t
Output Active from End-of-Write(1, 2,4)  
SEM Flag Write to Read Time  
SEM Flag Contention Window  
0
5
5
0
5
5
0
5
5
____  
____  
____  
____  
____  
____  
t
t
ns  
2738 tbl 14b  
NOTES:  
1. Transition is measured 0mV from Low or High-impedance voltage with load (Figure 2).  
2. This parameter is guaranteed by device characterization but is not production tested.  
3. To access RAM, CE = VIL, SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time.  
4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage  
and temperature, the actual tDH will always be smaller than the actual tOW.  
5. 'X' in part number indicates power rating (S or L).  
6.42  
9
IDT7005S/L  
High-Speed 8K x 8 Dual-Port Static RAM  
Military, Industrial and Commercial Temperature Ranges  
Timing Waveform of Write Cycle No. 1, R/W Controlled Timing(1,5,8)  
tWC  
ADDRESS  
(7)  
HZ  
t
OE  
tAW  
CE or SEM(9)  
(3)  
WR  
(6)  
AS  
(2)  
tWP  
t
t
R/W  
DATAOUT  
DATAIN  
(7)  
WZ  
t
OW  
t
(4)  
(4)  
t
DW  
tDH  
2738 drw 09  
Timing Waveform of Write Cycle No. 2, CE Controlled Timing(1,5)  
tWC  
ADDRESS  
tAW  
CE or SEM(9)  
R/W  
(6)  
AS  
(2)  
EW  
(3)  
tWR  
t
t
tDW  
tDH  
DATAIN  
2738 drw 10  
NOTES:  
1. R/W or CE must be HIGH during all address transitions.  
2. A write occurs during the overlap (tEW or tWP) of a LOW CE and a LOW R/W for memory array writing cycle.  
3. tWR is measured from the earlier of CE or R/W (or SEM or R/W) going HIGH to the end of write cycle.  
4. During this period, the I/O pins are in the output state and input signals must not be applied.  
5. If the CE or SEM LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the High-impedance state.  
6. Timing depends on which enable signal is asserted last, CE or R/W.  
7. This parameter is guaranteed by device characterization, but is not production tested. Transition is measured 0mV from steady state with the Output Test Load (Figure  
2).  
8. If OE is LOW during R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off and data to be placed  
on the bus for the required tDW. If OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified  
tWP.  
9. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. tEW must be met for either condition.  
61.402  
IDT7005S/L  
High-Speed 8K x 8 Dual-Port Static RAM  
Military, Industrial and Commercial Temperature Ranges  
Timing Waveform of Semaphore Read after Write Timing, Either Side(1)  
tSAA  
tOH  
A0-A2  
VALID ADDRESS  
VALID ADDRESS  
tAW  
tWR  
tACE  
tEW  
SEM  
tDW  
tSOP  
OUT  
VALID  
DATA  
DATA  
0
DATAIN VALID  
t
AS  
tWP  
tDH  
R/W  
tSWRD  
tAOE  
OE  
tSOP  
Write Cycle  
Read Cycle  
2738 drw 11  
NOTE:  
1. CE = VIH for the duration of the above timing (both write and read cycle).  
Timing Waveform of Semaphore Write Contention(1,3,4)  
A0"A"-A2"A"  
MATCH  
(2)  
SIDE  
“A”  
R/W"A"  
SEM"A"  
tSPS  
A0"B"-A2"B"  
MATCH  
(2)  
R/W"B"  
SEM"B"  
SIDE “B”  
2738 drw 12  
NOTES:  
1. DOR = DOL = VIL, CER = CEL = VIH. Semaphore flag is released from both sides (reads as ones from both sides) at cycle start.  
2. All timing is the same for left and right ports. Port “A” may be either left or right port. “B” is the opposite from port “A”.  
3. This parameter is measured from R/W“A” or SEM“A” going HIGH to R/W“B” or SEM“B” going HIGH.  
4. If tSPS is not satisfied, the semaphore will fall positively to one side or the other, but there is no guarantee which side will obtain the flag.  
6.42  
11  
IDT7005S/L  
High-Speed 8K x 8 Dual-Port Static RAM  
Military, Industrial and Commercial Temperature Ranges  
AC Electrical Characteristics Over the  
OperatingTemperatureandSupplyVoltageRange(6)  
7005X15  
7005X17  
7005X20  
Com'l, Ind  
& Military  
7005X25  
Com'l &  
Military  
Com'l Only  
Com'l Only  
Symbol  
BUSY TIMING (M/S=VIH  
Parameter  
Min.  
Max.  
Min.  
Max.  
Min.  
Max.  
Min.  
Max. Unit  
)
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
t
BAA  
BDA  
BAC  
BDC  
APS  
BDD  
WH  
15  
15  
15  
17  
17  
17  
20  
20  
20  
20  
20  
20  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
BUSY Access Time from Address Match  
BUSY Disable Time from Address Not Matched  
BUSY Access Time from Chip Enable Low  
BUSY Access Time from Chip Enable High  
Arbitration Priority Set-up Time(2)  
BUSY Disable to Valid Data(3)  
Write Hold After BUSY(5)  
t
t
t
15  
____  
17  
____  
17  
____  
17  
____  
t
5
____  
5
____  
5
____  
5
____  
t
18  
____  
18  
____  
30  
____  
30  
____  
t
12  
13  
15  
17  
BUSY TIMING (M/S=VIL  
)
____  
____  
____  
____  
____  
____  
____  
____  
BUSY Input to Write(4)  
Write Hold After BUSY(5)  
t
WB  
0
0
0
0
ns  
ns  
tWH  
12  
13  
15  
17  
PORT-TO-PORT DELAY TIMING  
____  
____  
____  
____  
____  
____  
____  
____  
t
WDD  
Write Pulse to Data Delay(1)  
Write Data Valid to Read Data Delay(1)  
30  
25  
30  
25  
45  
35  
50  
35  
ns  
tDDD  
ns  
2738 tbl 15a  
7005X35  
7005X55  
7005X70  
Com'l, Ind  
& Military  
Com'l, Ind &  
Military  
Military  
Only  
Symbol  
BUSY TIMING (M/  
Parameter  
Min.  
Max.  
Min.  
Max.  
Min.  
Max. Unit  
S=VIH)  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
t
BAA  
BDA  
BAC  
BDC  
APS  
BDD  
WH  
20  
20  
20  
45  
40  
40  
45  
40  
40  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
BUSY Access Time from Address Match  
BUSY Disable Time from Address Not Matched  
BUSY Access Time from Chip Enable Low  
BUSY Access Time from Chip Enable High  
Arbitration Priority Set-up Time(2)  
BUSY Disable to Valid Date(3)  
Write Hold After BUSY(5)  
t
t
t
20  
____  
35  
____  
35  
____  
t
5
____  
5
____  
5
____  
t
35  
____  
40  
____  
45  
____  
t
25  
25  
25  
BUSY TIMING (M/S=VIL  
)
____  
____  
____  
____  
____  
____  
BUSY Input to Write(4)  
Write Hold After BUSY(5)  
t
WB  
0
0
0
ns  
ns  
tWH  
25  
25  
25  
PORT-TO-PORT DELAY TIMING  
____  
____  
____  
____  
____  
____  
t
WDD  
Write Pulse to Data Delay(1)  
Write Data Valid to Read Data Delay (1)  
60  
45  
80  
65  
95  
80  
ns  
tDDD  
ns  
2738 tbl 15b  
NOTES:  
1. Port-to-port delay through RAM cells from writing port to reading port, refer to "Timing Waveform of Write with Port-to-Port Read and BUSY".  
2. To ensure that the earlier of the two ports wins.  
3. tBDD is a calculated parameter and is the greater of 0, tWDD – tWP (actual) or tDDD – tDW (actual).  
4. To ensure that the write cycle is inhibited on port "B" during contention with port "A".  
5. To ensure that a write cycle is completed on port "B" after contention on port "A".  
6. 'X' in part number indicates power rating (S or L).  
61.422  
IDT7005S/L  
High-Speed 8K x 8 Dual-Port Static RAM  
Military, Industrial and Commercial Temperature Ranges  
Timing Waveform of Write with Port-to-Port Read with BUSY(2,5)  
(M/S = VIH)(4)  
tWC  
MATCH  
ADDR"A"  
t
WP  
R/W"A"  
t
DW  
tDH  
VALID  
DATAIN "A"  
(1)  
APS  
t
MATCH  
ADDR"B"  
tBDA  
tBDD  
BUSY"B"  
tWDD  
VALID  
DATAOUT "B"  
(3)  
DDD  
t
2738 drw 13  
NOTES:  
1. To ensure that the earlier of the two ports wins. tAPS is ignored for for M/S = VIL (slave).  
2. CEL = CER = VIL  
3. OE = VIL for the reading port.  
4. If M/S = VIL (slave), then BUSY is an input (BUSY"A" =VIH), and BUSY"B" = "don't care", for this example.  
5. All timing is the same for left and right ports. Port "A" may be either the left or right port. Port "B" is the port opposite port "A".  
Timing Waveform of Write with BUSY  
tWP  
R/W"A"  
(3)  
tWB  
BUSY"B"  
(1)  
tWH  
(2)  
R/W"B"  
2738 drw 14  
NOTES:  
1. tWH must be met for both BUSY input (slave) and output (master).  
2. BUSY is asserted on Port "B", blocking R/W"B", until BUSY"B" goes HIGH  
3. tWB is only for the 'Slave' Version..  
6.42  
13  
IDT7005S/L  
High-Speed 8K x 8 Dual-Port Static RAM  
Military, Industrial and Commercial Temperature Ranges  
Waveform of BUSY Arbitration Controlled by CE Timing(1) (M/S = VIH)  
ADDR"A"  
ADDRESSES MATCH  
and "B"  
CE"A"  
(2)  
tAPS  
CE"B"  
tBAC  
tBDC  
BUSY"B"  
2738 drw 15  
Waveform of BUSY Arbitration Cycle Controlled by Address Match  
Timing(1) (M/S = VIH)  
ADDR"A"  
ADDRESS "N"  
(2)  
APS  
t
ADDR"B"  
MATCHING ADDRESS "N"  
tBAA  
tBDA  
BUSY"B"  
2738 drw 16  
NOTES:  
1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from port “A”.  
2. If tAPS is not satisfied, the BUSY signal will be asserted on one side or another but there is no guarantee on which side BUSY will be asserted.  
AC Electrical Characteristics Over the  
OperatingTemperatureandSupplyVoltageRange(1)  
7005X15  
7005X17  
7005X20  
Com'l, Ind  
& Military  
7005X25  
Com'l &  
Military  
Com'l Only  
Com'l Only  
Symbol  
Parameter  
Min.  
Max.  
Min.  
Max.  
Min.  
Max.  
Min.  
Max.  
Unit  
INTERRUPT TIMING  
____  
____  
____  
____  
____  
____  
____  
____  
t
AS  
WR  
INS  
INR  
Address Set-up Time  
0
0
0
0
ns  
ns  
ns  
t
Write Recovery Time  
Interrupt Set Time  
0
____  
0
____  
0
____  
0
____  
t
15  
15  
15  
15  
20  
20  
20  
20  
____  
____  
____  
____  
t
Interrupt Reset Time  
ns  
2738 tbl 16a  
7005X35  
7005X55  
7005X70  
Com'l, Ind  
& Military  
Com'l, Ind  
& Military  
Military  
Only  
Symbol  
INTERRUPT TIMING  
Parameter  
Min.  
Max.  
Min.  
Max.  
Min.  
Max.  
Unit  
____  
____  
____  
____  
____  
____  
t
AS  
WR  
INS  
INR  
Address Set-up Time  
Write Recovery Time  
Interrupt Set Time  
0
0
0
ns  
ns  
ns  
t
0
____  
0
____  
0
____  
t
25  
25  
40  
40  
50  
50  
____  
____  
____  
t
Interrupt Reset Time  
ns  
2738 tbl 16b  
NOTE:  
1. 'X' in part number indicates power rating (S or L).  
61.442  
IDT7005S/L  
High-Speed 8K x 8 Dual-Port Static RAM  
Military, Industrial and Commercial Temperature Ranges  
Waveform of Interrupt Timing(1)  
tWC  
ADDR"A"  
INTERRUPT SET ADDRESS(2)  
(3)  
AS  
(4)  
t
tWR  
CE"A"  
R/W"A"  
INT"B"  
(3)  
INS  
t
2738 drw 17  
tRC  
INTERRUPT CLEAR ADDRESS(2)  
ADDR"B"  
CE"B"  
(3)  
AS  
t
OE"B"  
(3)  
INR  
t
INT"B"  
2738 drw 18  
NOTES:  
1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from port “A”.  
2. See Interrupt Truth Table III.  
3. Timing depends on which enable signal (CE or R/W) asserted last.  
4. Timing depends on which enable signal (CE or R/W) is de-asserted first.  
Truth Table III — Interrupt Flag(1,4)  
Left Port  
Right Port  
R/W  
L
A
12L-A0L  
R/W  
R
A
12R-A0R  
Function  
Set Right INT Flag  
Reset Right INT Flag  
Set Left INT Flag  
Reset Left INT Flag  
CE  
L
OE  
L
INT  
L
CE  
R
OE  
R
INTR  
L
X
X
X
L
X
X
L
X
1FFF  
X
X
X
L(3)  
H(2)  
X
X
L
X
L
L
X
X
X
L(2)  
H(3)  
X
R
X
L
1FFF  
1FFE  
X
R
X
X
X
L
L
1FFE  
X
X
X
L
2738 tbl 17  
NOTES:  
1. Assumes BUSYL = BUSYR = VIH.  
2. If BUSYL = VIL, then no change.  
3. If BUSYR = VIL, then no change.  
4. INTR and INTL must be initialized at power-up.  
6.42  
15  
IDT7005S/L  
High-Speed 8K x 8 Dual-Port Static RAM  
Military, Industrial and Commercial Temperature Ranges  
Truth Table IV — Address BUSY  
Arbitration  
Inputs  
Outputs  
A
-A  
AOORL-A1122RL  
Function  
Normal  
Normal  
Normal  
(1)  
(1)  
CE  
L
CE  
R
BUSY  
L
BUSYR  
X
H
X
L
X
X
H
L
NO MATCH  
MATCH  
H
H
H
H
MATCH  
H
H
MATCH  
(2)  
(2)  
Write Inhibit(3)  
2738 tbl 18  
NOTES:  
1. Pins BUSYL and BUSYR are both outputs when the part is configured as a master. Both are inputs when configured as a slave. BUSYX outputs on the IDT7005 are  
push-pull, not open drain outputs. On slaves the BUSYX input internally inhibits writes.  
2. 'L' if the inputs to the opposite port were stable prior to the address and enable inputs of this port. 'H' if the inputs to the opposite port became stable after the address  
and enable inputs of this port. If tAPS is not met, either BUSYL or BUSYR = LOW will result. BUSYL and BUSYR outputs can not be LOW simultaneously.  
3. Writes to the left port are internally ignored when BUSYL outputs are driving LOW regardless of actual logic level on the pin. Writes to the right port are internally ignored  
when BUSYR outputs are driving LOW regardless of actual logic level on the pin.  
Truth Table V — Example of Semaphore Procurement Sequence(1,2,3)  
Functions  
D0  
- D7  
Left  
D0  
- D7  
Right  
Status  
No Action  
1
1
Semaphore free  
Left Port Writes "0" to Semaphore  
Right Port Writes "0" to Semaphore  
Left Port Writes "1" to Semaphore  
Left Port Writes "0" to Semaphore  
Right Port Writes "1" to Semaphore  
Left Port Writes "1" to Semaphore  
Right Port Writes "0" to Semaphore  
Right Port Writes "1" to Semaphore  
Left Port Writes "0" to Semaphore  
Left Port Writes "1" to Semaphore  
0
0
1
1
0
1
1
1
0
1
1
1
0
0
1
1
0
1
1
1
Left port has semaphore token  
No change. Right side has no write access to semaphore  
Right port obtains semaphore token  
No change. Left port has no write access to semaphore  
Left port obtains semaphore token  
Semaphore free  
Right port has semaphore token  
Semaphore free  
Left port has semaphore token  
Semaphore free  
2738 tbl 19  
NOTES:  
1. This table denotes a sequence of events for only one of the eight semaphores on the IDT7005.  
2. There are eight semaphore flags written to via I/O0 and read from all I/O's. These eight semaphores are addressed by A0 - A2.  
3. CE=VIH, SEM=VIL to access the semaphores. Refer to the semaphore Read/Write Control Truth Table.  
FunctionalDescription  
(HEX), where a write is defined as CE = R/W= VIL per Truth Table III.  
Theleftportclearstheinterruptthroughaccessofaddresslocation1FFE  
when CE = OE = VIL. For this example, R/W is a "don't care". Likewise,  
therightportinterruptflag(INTR)isassertedwhentheleftportwritesto  
memory location 1FFF (HEX) and to clear the interrupt flag (INTR), the  
rightportmustreadthememorylocation1FFF.Themessage(8bits)at  
1FFEor1FFFisuser-defined,sinceitisanaddressableSRAMlocation.  
Iftheinterruptfunctionisnotused,addresslocations1FFEand1FFFare  
notusedasmailboxes,butaspartoftherandomaccessmemory.Refer  
toTruthTableIIIfortheinterruptoperation.  
TheIDT7005providestwoportswithseparatecontrol,addressand  
I/Opinsthatpermitindependentaccessforreadsorwritestoanylocation  
inmemory.TheIDT7005hasanautomaticpowerdownfeaturecontrolled  
by CE. The CE controls on-chip power down circuitry that permits the  
respectiveporttogointoastandbymodewhennotselected(CEHIGH).  
Whenaportisenabled,accesstotheentirememoryarrayispermitted.  
Interrupts  
Iftheuserchoosestheinterruptfunction,amemorylocation(mailbox  
or message center) is assigned to each port. The left port interrupt flag  
(INTL) is asserted when the right port writes to memory location 1FFE  
61.462  
IDT7005S/L  
High-Speed 8K x 8 Dual-Port Static RAM  
Military, Industrial and Commercial Temperature Ranges  
SLAVE  
Dual Port  
RAM  
MASTER  
Dual Port  
RAM  
CE  
CE  
BUSY (L) BUSY (R)  
BUSY (L) BUSY (R)  
MASTER  
Dual Port  
RAM  
SLAVE  
Dual Port  
RAM  
CE  
CE  
BUSY (R)  
BUSY (R)  
BUSY (L) BUSY (R)  
BUSY (L)  
BUSY (L)  
,
2738 drw 19  
Figure 3. Busy and chip enable routing for both width and depth expansion with IDT7005 RAMs.  
BusyLogic  
address signals only. It ignores whether an access is a read or write.  
In a master/slave array, both address and chip enable must be valid  
long enough for a BUSY flag to be output from the master before the  
actualwritepulsecanbeinitiatedwiththeR/Wsignal.Failuretoobserve  
thistimingcanresultinaglitchedinternalwriteinhibitsignalandcorrupted  
dataintheslave.  
BusyLogicprovidesahardwareindicationthatbothportsoftheRAM  
haveaccessedthesamelocationatthesametime.Italsoallowsoneofthe  
twoaccessestoproceedandsignalstheothersidethattheRAMisbusy”.  
TheBUSYpincanthenbeusedtostalltheaccessuntiltheoperationon  
theothersideiscompleted.Ifawriteoperationhasbeenattemptedfrom  
thesidethatreceivesaBUSYindication,thewritesignalisgatedinternally  
topreventthewritefromproceeding.  
TheuseofBUSYlogicisnotrequiredordesirableforallapplications.  
InsomecasesitmaybeusefultologicallyORtheBUSYoutputstogether  
and use any BUSY indication as an interrupt source to flag the event of  
anillegalorillogicaloperation.IfthewriteinhibitfunctionofBUSYlogicis  
notdesirable,theBUSYlogiccanbedisabledbyplacingthepartinslave  
modewiththeM/Spin.OnceinslavemodetheBUSYpinoperatessolely  
asawriteinhibitinputpin.Normaloperationcanbeprogrammedbytying  
the BUSY pins HIGH. If desired, unintended write operations can be  
prevented to a port by tying the BUSY pin for that port LOW.  
Semaphores  
TheIDT7005isanextremelyfastDual-Port8Kx8CMOSStaticRAM  
withanadditional8addresslocationsdedicatedtobinarysemaphoreflags.  
TheseflagsalloweitherprocessorontheleftorrightsideoftheDual-Port  
RAMtoclaimaprivilegeovertheotherprocessorforfunctionsdefinedby  
thesystemdesigner’ssoftware.Asanexample,thesemaphorecanbe  
usedbyoneprocessortoinhibittheotherfromaccessingaportionofthe  
Dual-Port RAM or any other shared resource.  
The Dual-Port RAM features a fast access time, and both ports are  
completelyindependentofeachother.Thismeansthattheactivityonthe  
leftportinnowayslowstheaccesstimeoftherightport. Bothportsare  
identicalinfunctiontostandardCMOSStaticRAMandcanbereadfrom,  
orwrittento,atthesametimewiththeonlypossibleconflictarisingfromthe  
simultaneous writing of, or a simultaneous READ/WRITE of, a non-  
semaphorelocation.Semaphoresareprotectedagainstsuchambiguous  
situationsandmaybeusedbythesystemprogramtoavoidanyconflicts  
inthenon-semaphoreportionoftheDual-PortRAM.Thesedeviceshave  
anautomaticpower-downfeaturecontrolledbyCE,theDual-PortRAM  
enable,andSEM,thesemaphoreenable.TheCEandSEMpinscontrol  
on-chip power down circuitry that permits the respective port to go into  
standbymodewhennotselected. Thisistheconditionwhichisshownin  
Truth Table I where CE and SEM are both HIGH.  
TheBUSYoutputsontheIDT7005RAMinmastermode,arepush-  
pulltypeoutputsanddonotrequirepullupresistorstooperate. Ifthese  
RAMs are being expanded in depth, then the BUSY indication for the  
resulting array requires the use of an external AND gate.  
Width Expansion with Busy Logic  
Master/SlaveArrays  
WhenexpandinganIDT7005RAMarrayinwidthwhileusingBUSY  
logic,onemasterpartisusedtodecidewhichsideoftheRAMarraywill  
receiveaBUSYindication,andtooutputthatindication.Anynumberof  
slavestobeaddressedinthesameaddressrangeasthemaster,usethe  
BUSYsignalasawriteinhibitsignal.ThusontheIDT7005RAMtheBUSY  
pinisanoutputifthepartisusedasamaster(M/Spin=VIH),andtheBUSY  
pin is an input if the part used as a slave (M/S pin = VIL) as shown in  
Figure 3.  
SystemswhichcanbestusetheIDT7005containmultipleprocessors  
or controllers and are typically very high-speed systems which are  
softwarecontrolledorsoftwareintensive.Thesesystemscanbenefitfrom  
aperformanceincreaseofferedbytheIDT7005'shardwaresemaphores,  
whichprovidealockoutmechanismwithoutrequiringcomplexprogram-  
ming.  
Iftwoormoremasterpartswereusedwhenexpandinginwidth,asplit  
decisioncouldresultwithonemasterindicatingBUSYononesideofthe  
arrayandanothermasterindicatingBUSYononeothersideofthearray.  
Thiswouldinhibitthewriteoperationsfromoneportforpartofawordand  
inhibitthewriteoperationsfromtheotherportfortheotherpartoftheword.  
The BUSY arbitration on a master is based on the chip enable and  
Softwarehandshakingbetweenprocessorsoffersthemaximumin  
systemflexibilitybypermittingsharedresourcestobeallocatedinvarying  
6.42  
17  
IDT7005S/L  
High-Speed 8K x 8 Dual-Port Static RAM  
Military, Industrial and Commercial Temperature Ranges  
configurations.TheIDT7005doesnotuseitssemaphoreflagstocontrol cause either signal (SEM or OE) to go inactive or the output will  
anyresourcesthroughhardware,thusallowingthesystemdesignertotal never change.  
flexibilityinsystemarchitecture.  
AsequenceWRITE/READmustbeusedbythesemaphoreinorder  
An advantage of using semaphores rather than the more common to guarantee that no system level contention will occur. A processor  
methodsofhardwarearbitrationisthatwaitstatesareneverincurredin requestsaccesstosharedresourcesbyattemptingtowriteazerointoa  
either processor. This can prove to be a major advantage in very semaphorelocation.Ifthesemaphoreisalreadyinuse,thesemaphore  
high-speedsystems.  
requestlatchwillcontainazero,yetthesemaphoreflagwillappearasone,  
afactwhichtheprocessorwillverifybythesubsequentread(seeTruth  
TableV).Asanexample,assumeaprocessorwritesazerototheleftport  
atafreesemaphorelocation.Onasubsequentread,theprocessorwill  
verifythatithaswrittensuccessfullytothatlocationandwillassumecontrol  
overtheresourceinquestion.Meanwhile,ifaprocessorontherightside  
attemptstowriteazerotothesamesemaphoreflagitwillfail, aswillbe  
verifiedbythefactthataonewillbereadfromthatsemaphoreontheright  
side during subsequent read. Had a sequence of READ/WRITE been  
usedinstead,systemcontentionproblemscouldhaveoccurredduringthe  
gap between the read and write cycles.  
How the Semaphore Flags Work  
Thesemaphorelogicisasetofeightlatcheswhichareindependent  
oftheDual-PortRAM.Theselatchescanbeusedtopassaflag,ortoken,  
fromoneporttotheothertoindicatethatasharedresourceisinuse.The  
semaphores provide a hardware assist for a use assignment method  
calledTokenPassingAllocation.Inthismethod,thestateofasemaphore  
latchisusedasatokenindicatingthatsharedresourceisinuse.Iftheleft  
processorwantstousethisresource,itrequeststhetokenbysettingthe  
latch.Thisprocessorthenverifiesitssuccessinsettingthelatchbyreading  
it. If it was successful, it proceeds to assume control over the shared  
resource.Ifitwasnotsuccessfulinsettingthelatch,itdeterminesthatthe  
rightsideprocessorhassetthelatchfirst, hasthetokenandisusingthe  
sharedresource.Theleftprocessorcantheneitherrepeatedlyrequest  
thatsemaphore’sstatusorremoveitsrequestforthatsemaphoretoperform  
anothertaskandoccasionallyattemptagaintogaincontrolofthetokenvia  
thesetandtestsequence.Oncetherightsidehasrelinquishedthetoken,  
theleftsideshouldsucceedingainingcontrol.  
Itisimportanttonotethatafailedsemaphorerequestmustbefollowed  
byeitherrepeatedreadsorbywritingaoneintothesamelocation. The  
reasonforthisiseasilyunderstoodbylookingatthesimplelogicdiagram  
ofthesemaphoreflaginFigure4.Twosemaphorerequestlatchesfeed  
into a semaphore flag. Whichever latch is first to present a zero to the  
semaphoreflagwillforceitssideofthesemaphoreflagLOWandtheother  
sideHIGH.Thisconditionwillcontinueuntilaoneiswrittentothesame  
semaphorerequestlatch.Shouldtheotherside’ssemaphorerequestlatch  
havebeenwrittentoazerointhemeantime,thesemaphoreflagwillflip  
overtotheothersideassoonasaoneiswrittenintothefirstside’srequest  
latch.Thesecondside’sflagwillnowstayLOWuntilitssemaphorerequest  
latchiswrittentoaone.Fromthisitiseasytounderstandthat,ifasemaphore  
is requested and the processor which requested it no longer needs the  
resource, the entire system can hang up until a one is written into that  
semaphorerequestlatch.  
ThesemaphoreflagsareactiveLOW.Atokenisrequestedbywriting  
azerointoasemaphorelatchandisreleasedwhenthesamesidewrites  
aonetothatlatch.  
The eight semaphore flags reside within the IDT7005 in a separate  
memoryspacefromtheDual-PortRAM.Thisaddressspaceisaccessed  
byplacingaLOWinputontheSEMpin(whichactsasachipselectforthe  
semaphore flags) and using the other control pins (Address, OE, and  
R/W) as they would be used in accessing a standard static RAM. Each  
oftheflagshasauniqueaddresswhichcanbeaccessedbyeitherside  
throughaddresspinsA0A2.Whenaccessingthesemaphores,noneof  
theotheraddresspinshasanyeffect.  
The critical case of semaphore timing is when both sides request a  
single token by attempting to write a zero into it at the same time. The  
semaphorelogicisspeciallydesignedtoresolvethisproblem.Ifsimulta-  
neousrequestsaremade,thelogicguaranteesthatonlyonesidereceives  
thetoken. Ifonesideisearlierthantheotherinmakingtherequest, the  
firstsidetomaketherequestwillreceivethetoken.Ifbothrequestsarrive  
at the same time, the assignment will be arbitrarily made to one port or  
the other.  
Whenwritingtoasemaphore,onlydatapinD0isused.IfaLOWlevel  
iswrittenintoanunusedsemaphorelocation,thatflagwillbesettoazero  
on that side and a one on the other side (see Truth Table V). That  
semaphorecannowonlybemodifiedbythesideshowingthezero.When  
aoneiswrittenintothesamelocationfromthesameside,theflagwillbe  
settoaoneforbothsides(unlessasemaphorerequestfromtheotherside  
ispending)andthencanbewrittentobybothsides. Thefactthattheside  
whichisabletowriteazerointoasemaphoresubsequentlylocksoutwrites  
fromtheothersideiswhatmakessemaphoreflagsusefulininterprocessor  
communications.(Athoroughdiscussionontheuseofthisfeaturefollows  
shortly.)Azerowrittenintothesamelocationfromtheothersidewillbe  
storedinthesemaphorerequestlatchforthatsideuntilthesemaphoreis  
freedbythefirstside.  
One caution that should be noted when using semaphores is that  
semaphoresalonedonotguaranteethataccesstoaresourceissecure.  
Aswithanypowerfulprogrammingtechnique,ifsemaphoresaremisused  
or misinterpreted, a software error can easily happen.  
Initializationofthesemaphoresisnotautomaticandmustbehandled  
viatheinitializationprogramatpower-up.Sinceanysemaphorerequest  
flagwhichcontainsazeromustberesettoaone,allsemaphoresonboth  
sidesshouldhaveaonewrittenintothematinitializationfrombothsides  
to assure that they will be free when needed.  
Whenasemaphoreflagisread,itsvalueisspreadintoalldatabitsso  
thataflagthatisaonereadsasaoneinalldatabitsandaflagcontaining  
azeroreadsasallzeros.Thereadvalueislatchedintooneside’soutput  
UsingSemaphores—SomeExamples  
Perhapsthesimplestapplicationofsemaphoresistheirapplicationas  
registerwhenthatside'ssemaphoreselect(SEM)andoutputenable(OE) resourcemarkersfortheIDT7005’sDual-PortRAM.Saythe8Kx8RAM  
signalsgoactive.Thisservestodisallowthesemaphorefromchanging wastobedividedintotwo4Kx8blockswhichweretobededicatedatany  
stateinthemiddleofareadcycleduetoawritecyclefromtheotherside. onetimetoservicingeithertheleftorrightport.Semaphore0couldbeused  
Becauseofthislatch,arepeatedreadofasemaphoreinatestloopmust toindicatethesidewhichwouldcontrolthelowersectionofmemory,and  
61.482  
IDT7005S/L  
High-Speed 8K x 8 Dual-Port Static RAM  
Military, Industrial and Commercial Temperature Ranges  
Semaphore 1 could be defined as the indicator for the upper section of evenbeassigneddifferentmeaningsondifferentsidesratherthanbeing  
memory.  
Totakearesource,inthisexamplethelower4Kof Dual-PortRAM,  
given a common meaning as was shown in the example above.  
Semaphores are a useful form of arbitration in systems like disk  
the processor on the left port could write and then read a zero in to interfaceswheretheCPUmustbelockedoutofasectionofmemoryduring  
Semaphore0.Ifthistaskweresuccessfullycompleted(azerowasread atransferandtheI/Odevicecannottolerateanywaitstates.Withtheuse  
back rather than a one), the left processor would assume control of the ofsemaphores,oncethetwodeviceshasdeterminedwhichmemoryarea  
lower4K.Meanwhiletherightprocessorwasattemptingtogaincontrolof wasoff-limitstotheCPU,boththeCPUandtheI/Odevicescouldaccess  
theresourceaftertheleftprocessor,itwouldreadbackaoneinresponse theirassignedportionsofmemorycontinuouslywithoutanywaitstates.  
tothezeroithadattemptedtowriteintoSemaphore0. Atthispoint, the  
SemaphoresarealsousefulinapplicationswherenomemoryWAIT”  
softwarecouldchoosetotryandgaincontrolofthesecond4Ksectionby stateisavailableononeorbothsides.Onceasemaphorehandshakehas  
writing,thenreadingazerointoSemaphore1.Ifitsucceededingaining been performed, both processors can access their assigned RAM  
control,itwouldlockouttheleftside.  
segmentsatfullspeed.  
Once the left side was finished with its task, it would write a one to  
Anotherapplicationisintheareaofcomplexdatastructures.Inthis  
Semaphore 0 and may then try to gain access to Semaphore 1. If case,blockarbitrationisveryimportant.Forthisapplicationoneprocessor  
Semaphore1wasstilloccupiedbytherightside,theleftsidecouldundo mayberesponsibleforbuildingandupdatingadatastructure.Theother  
itssemaphorerequestandperformothertasksuntilitwasabletowrite,then processorthenreadsandinterpretsthatdatastructure.Iftheinterpreting  
readazerointoSemaphore1.Iftherightprocessorperformsasimilartask processorreadsanincompletedatastructure,amajorerrorconditionmay  
withSemaphore0,thisprotocolwouldallowthetwoprocessorstoswap exist.Therefore,somesortofarbitrationmustbeusedbetweenthetwo  
4K blocks of Dual-Port RAM with each other.  
differentprocessors.Thebuildingprocessorarbitratesfortheblock,locks  
The blocks do not have to be any particular size and can even be itandthenisabletogoinandupdatethedatastructure.Whentheupdate  
variable, depending upon the complexity of the software using the is completed, the data structure block is released. This allows the  
semaphoreflags.AlleightsemaphorescouldbeusedtodividetheDual- interpretingprocessortocomebackandreadthecompletedatastructure,  
Port RAM or other shared resources into eight parts. Semaphores can therebyguaranteeingaconsistentdatastructure.  
L PORT  
R PORT  
SEMAPHORE  
REQUEST FLIP FLOP  
SEMAPHORE  
REQUEST FLIP FLOP  
D0  
D
D
D0  
Q
Q
WRITE  
WRITE  
SEMAPHORE  
READ  
SEMAPHORE  
,
READ  
2738 drw 20  
Figure 4. IDT7005 Semaphore Logic  
6.42  
19  
IDT7005S/L  
High-Speed 8K x 8 Dual-Port Static RAM  
Military, Industrial and Commercial Temperature Ranges  
OrderingInformation  
XXXXX  
A
999  
A
A
A
A
Device Power Speed Package  
Type  
Process/  
Temperature  
Range  
Tube or Tray  
Tape and Reel  
Blank  
8
Blank Commercial (0°C to +70°C)  
I(1)  
B
Industrial (-40°C to +85°C)  
Military (-55°C to +125°C)  
Compliant to MIL-PRF-38538 QML  
G(2)  
Green  
64-pin TQFP (PN64)  
68-pin PGA (G68)  
68-pin PLCC (J68)  
PF  
G
J
Commercial Only  
Commercial Only  
Commercial, Industrial & Military  
Commercial & Military  
Commercial, Industrial & Military  
Commercial, Industrial & Military  
Military Only  
15  
17  
20  
25  
35  
55  
70  
Speed in nanoseconds  
S
L
Standard Power  
Low Power  
2738 drw 21  
7005 64K (8K x 8) Dual-Port RAM  
NOTES:  
1. Industrial temperature range is available on selected TQFP packages in standard power.  
For other speeds, packages and powers contact your sales office.  
2. Green parts available. For specific speeds, packages and powers contact your local sales office.  
DatasheetDocumentHistory  
12/21/98:  
Initiateddatasheetdocumenthistory  
Convertedtonewformat  
Cosmeticandtypographicalcorrections  
Addedadditionalnotestopinconfigurations  
Changeddrawingformat  
Pages 2 & 3  
06/03/99:  
11/10/99:  
08/07/00:  
Replaced IDT logos  
Page 1  
Page 4  
Page 6  
Addedcopyrightinfo  
Fixed overbar errors  
Increasedstoragetemperatureparameter  
ClarifiedTA Parameter  
DCElectricalparameters–changedwordingfrom"open"to"disabled"  
Changed±500mVto0mVinnotes  
Addeddaterevisionforpinconfigurations  
09/18/01:  
Page 2 & 3  
Page 14  
Replaced one copy of table 13b with 13a for 15, 17,20 & 25ns speeds for AC Electrical Characteristics  
INTERRUPT TIMING  
62.402  
IDT7005S/L  
High-Speed 8K x 8 Dual-Port Static RAM  
Military, Industrial and Commercial Temperature Ranges  
DatasheetDocumentHistory(continued)  
01/31/06:  
Page 1  
Addedgreenavailabilitytofeatures  
Page 20  
Addedgreenindicatortoorderinginformation  
10/21/08:  
09/17/12:  
Page 20  
Removed "IDT" from orderable part number  
Pages 6,7,9,12,& 14  
In all of the DC & AC Electrical tables the 7005X20 speed grade  
changedfrom7005X20Com'l&MilitarytoincludeIndmakingit  
Com'l, Ind&Military  
Page 20  
Added T& R indicator to ordering information  
06/10/16:  
Pages 2 & 3  
Changed diagram for the PN64 pin configuration by rotating package pin labels and pin  
numbers 90 degrees counter clockwise to reflect pin 1 orientation & added pin 1 dot at pin 1  
PN64 pin configuration: removed the PN64 chamfer, the arrow and the index indicator  
Added the IDT logo to all pin configurations and changed the text to be in  
alignment with new diagram marking specs  
Removedthedaterevisionindicatorfromallpinconfigurations  
UpdatedfootnotereferencesforPN64pinconfiguration  
The package codes PN64-1, G68-1 & J68-1 changed to PN64, G68 & J68 respectively to  
matchstandardpackagecodes  
Pages 2 & 27  
CORPORATE HEADQUARTERS  
for SALES:  
for Tech Support:  
408-284-2794  
6024 Silver Creek Valley Road  
San Jose, CA 95138  
800-345-7015 or 408-284-8200  
fax: 408-284-2775  
www.idt.com  
DualPortHelp@idt.com  
The IDT logo is a registered trademark of Integrated Device Technology, Inc.  
6.42  
21  

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