70825L20PF9 [IDT]
TQFP-80, Tray;
| 型号： | 70825L20PF9 |
| 厂家： | 
INTEGRATED DEVICE TECHNOLOGY |
| 描述： | TQFP-80, Tray |
| 文件： | 总21页 (文件大小：213K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IDT70825S/L
HIGH SPEED 128K (8K X 16 BIT)
SEQUENTIAL ACCESS
RANDOM ACCESS MEMORY (SARAM™)
Features
◆
◆
Architecture based on Dual-Port RAM cells
Compatible with Intel BMIC and 82430 PCI Set
Width and Depth Expandable
Sequential side
High-speed access
◆
– Military: 35/45ns (max.)
◆
– Commercial: 20/25/35/45ns (max.)
Low-power operation
◆
◆
– Address based flags for buffer control
– IDT70825S
– Pointer logic supports up to two internal buffers
Battery backup operation - 2V data retention
TTL-compatible, single 5V (+10%) power supply
Available in 80-pin TQFP and 84-pin PGA
Military product compliant to MIL-PRF-38535 QML
Industrial temperature range (-40°C to +85°C) is available
for selected speeds
Active: 775mW (typ.)
Standby: 5mW (typ.)
– IDT70825L
◆
◆
◆
Active: 775mW (typ.)
Standby: 1mW (typ.)
◆
◆
◆
8K x 16 Sequential Access Random Access Memory
™
(SARAM )
– Sequential Access from one port and standard Random
Access from the other port
– Separate upper-byte and lower-byte control of the
Random Access Port
High speed operation
– 20ns tAA for random access port
– 20ns tCD for sequential port
– 25ns clock cycle time
Description
The IDT70825 is a high-speed 8K x 16-Bit Sequential Access
Random Access Memory (SARAM). The SARAM offers a single-chip
solution to buffer data sequentially on one port, and be accessed
randomly (asynchronously) through the other port. The device has a
◆
Functional Block Diagram
13
RST
SCLK
CNTEN
SOE
SSTRT
A
0-12
CE
OE
Random
Access
Port
Sequential
Access
R/W
LB LSB
UB MSB
CMD
1
2
Port
Controls
SSTRT
Controls
,
SCE
SR/W
SLD
8K X 16
Memory
Array
16
16
16
Data
Addr
R
Reg.
13
Data
L
I/O0-15
SI/O0-15
13
Addr
L
R
13
RST
13
Pointer/
Counter
13
13
Start Address for Buffer #1
End Address for Buffer #1
Start Address for Buffer #2
End Address for Buffer #2
Flow Control Buffer
13
EOB
1
2
COMPARATOR
EOB
Flag Status
3016 drw 01
MAY 2000
1
DSC-3016/9
©2000IntegratedDeviceTechnology,Inc.
6.07
IDT70825S/L
High-Speed 8K x 16 Sequential Access Random Access Memory
Military, Industrial and Commercial Temperature Ranges
Dual-PortRAMbasedarchitecturewithastandardSRAMinterfacefor port to enter a very low standby power mode.
the random (asynchronous) access port, and a clocked interface with
counter sequencing for the sequential (synchronous) access port.
The IDT70825is packagedina 80-pinThinQuadFlatpack(TQFP)
or84-pinPinGridArray(PGA).Militarygradeproductis manufactured
FabricatedusingCMOShigh-performancetechnology,thismemory incompliance withthe latestrevisionofMIL-PRF-38535QML, making
device typically operates on less than 775mW of power at maximum it ideally suited to military temperature applications demanding the
high-speed clock-to-data and Random Access. An automatic power highest level of performance and reliability.
down feature, controlled by CE, permits the on-chip circuitry of each
Pin Configurations(1,2,3)
INDEX
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61
SI/O
1
A
A
A
A
A
A
A
A
A
A
V
V
A
A
11
10
9
60
59
1
SI/O
0
2
58
57
GND
N/C
SCE
SR/W
RST
SLD
3
4
5
6
7
8
8
56
55
7
6
54
53
52
51
5
4
SSTRT
2
3
9
IDT70825PF
PN80-1(4)
SSTRT
1
2
10
11
12
13
14
15
16
17
18
19
20
50
49
GND
GND
CNTEN
SOE
SCLK
GND
CC
CC
1
80-PinTQFP
Top View(5)
48
47
0
46
45
CMD
CE
LB
44
EOB
2
EOB
1
43 UB
42
VCC
R/W
OE
41
I/O0
21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
,
3016 drw 02
63
61
V
60
58
55
54
51
48
46
45
42
11
SSTRT2
CNTEN
EOB
1
GND
I/O
1
CC
NC
SR/W
GND
GND NC
66
67
69
64
62
59
56
49
47
44
43
40
50
10
09
08
07
06
05
04
03
02
01
EOB
2
SOE RST
SCE
NC
SI/O
0
SI/O
1
SI/O3
I/O
2
SLD
I/O
0
65
57
53
41
39
52
SSTRT1
I/O
3
GND
SCLK GND
SI/O
2
VCC
68
38
37
I/O
4
V
CC
SI/O
4
SI/O5
72
75
76
71
73
33
35
34
I/O
7
I/O
6
SI/O8
SI/O
7
GND
GND
IDT70825G
G84-3(4)
70
74
32
31
36
I/O
9
I/O
5
I/O
8
SI/O9
SI/O10 SI/O
6
84-Pin PGA
Top View(5)
77
78
28
29
30
I/O10 I/O11
V
CC
SI/O12
V
CC SI/O11
79
80
26
27
I/O12
I/O13
83
SI/O14
23
SI/O13
25
81
7
11
12
CMD
I/O14
NC
V
CC
A2
NC SI/O15
82
1
2
5
8
10
14
17
20
22
24
OE
LB
A
7
A12
A
4
V
CC
A10
I/O15 GND
A
0
GND
84
3
4
6
9
15
13
16
18
19
21
NC
UB
CE
A8
R/W
A
1
A
5
A3
A
6
A
9
A11
A
B
C
D
E
F
G
H
J
K
L
INDEX
3016 drw 03
NOTES:
1. All VCC pins must be connected to power supply.
2. All GND pins must be connected to ground supply.
3. PN-80-1 package body is approximately 14mm x 14mm x 1.4mm.
G84-3 package body is approximately 1.21 in x 1.21 in x .16 in.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
2
IDT70825S/L
High-Speed 8K x 16 Sequential Access Random Access Memory
Military, Industrial and Commercial Temperature Ranges
Pin Descriptions: Random Access Port(1)
SYMBOL
NAME
I/O
DESCRIPTIONS
A
0-
A
12
Address Lines
Inputs/Outputs
Chip Enable
I
I
I
Address inputs to access the 8192-word (16-Bit) memory array.
I/O
0
-I/O15
Random access data inputs/outputs for 16-Bit wide data.
CE
When CE is LOW, the random access port is enabled. When CE is HIGH, the random access port is disabled
into power-down mode and the I/O outputs are in the High-impedance state. All data is retained during CE =
VIH, unless it is altered by the sequential port. CE and CMD may not be LOW at the same time.
CMD
Control Register
Enable
I
I
When CMD is LOW, address lines A0-A2, R/W, and inputs/outputs I/O0-I/O12, are used to access the control
register, the flag register, and the start and end of buffer registers. CMD and CE may not be LOW at the same
time.
R/W
Read/Write Enable
Output Enable
If CE is LOW and CMD is HIGH, data is written into the array when R/W is LOW and read out of the array when
R/W is HIGH. If CE is HIGH and CMD is LOW, R/W is used to access the buffer command registers. CE and
CMD may not be LOW at the same time.
OE
I
I
When OE is LOW and R/W is HIGH, I/O
0-I/O15 outputs are enabled. When OE is HIGH, the I/O outputs are in
the High-impedance state.
Lower Byte, Upper
Byte Enables
When LB is LOW, I/O
0
-I/O
7
are accessible for read and write operations. When LB is HIGH I/O
0-I/O7 are tri-
LB, UB
stated and blocked during read and write operations. UB controls access for I/O
8
-I/O15 in the same manner and
is asynchronous from LB.
V
CC
Power Supply
Ground
I
I
Seven +5V power supply pins. All VCC pins must be connected to the same +5V VCC supply.
Ten ground pins. All ground pins must be connected to the same ground supply.
GND
3016 tbl 01
Pin Descriptions: Sequential Access Port(1)
SYMBOL
SI/O0-15
SCLK
NAME
I/O
DESCRIPTIONS
Sequential data inputs/outputs for 16-bit wide data.
SI/O
Inputs/Outputs
Clock
I
I
0
-SI/O15, SCE, SR/W, and SLD are registered on the LOW-to-HIGH transition of SCLK. Also, the sequential
access port address pointer increments by 1 on each LOW-to-HIGH transition of SCLK when CNTEN is LOW.
SCE
Chip Enable
I
When SCE is LOW, the sequential access port is enabled on the LOW-to-HIGH transition of SCLK. When SCE
is HIGH, the sequential access port is disabled into powered-down mode on the LOW-to-HIGH transition of
SCLK, and the SI/O outputs are in the High-impedance state. All data is retained, unless altered by the random
access port.
CNTEN
Control Enable
I
I
When CNTEN is LOW, the address pointer increments on the LOW-to-HIGH transition of SCLK. This function is
independent of CE.
SR/W
Read/Write Enable
When SR/W and SCE are LOW, a write cycle is initiated on the LOW-to-HIGH transition of SCLK. When SR/W is
HIGH, and SCE and SOE are LOW, a read cycle is initiated on the LOW-to-HIGH transition of SCLK. Termination
of a write cycle is done on the LOW-to-HIGH transition of SCLK if SR/W or SCE is HIGH.
SLD
Address Pointer
Load Control
I
When SLD is sampled LOW, there is an internal delay of one cycle before the address pointer changes. When
SLD is LOW, data on the inputs SI/O0-SI/O12 is loaded into a data-in registe r on the LOW-to-HIGH transition of
SCLK. On the cycle following SLD, the address pointer changes to the address location contained in the data-
in register. SSTRT and SSTRT may notbe LOW while SLD is LOW or during the cycle following SLD.
1
2
Load Start of
I
I
SSTRT
,
SSTRT1
2
Address Register
When SSTRT
1
or SSTRT2 is LOW, the startof address register #1 or #2 is loaded into the address pointer on
the LOW-to-HIGH transition of SCLK. The start address are stored in internal registers. SSTRT
may not be LOW while SLD is LOW or during the cycle following SLD.
1
and SSTRT
2
End of Buffer Flag
EOB
of the buffer registers. The flags can be cleared by either asserting RST LOW or by writing zero into Bit 0
and/or Bit 1 of the control register at address 101. EOB and EOB are dependent on separate internal
registers, and therefore separate match addresses.
1
or EOB2 is output LOW when the address pointer is incremented to match the address stored in the end
EOB
1,
EOB
2
1
2
SOE
RST
Output Enable
Reset
I
I
SOE controls the data outputs and is independentof SCLK. When SOE is LOW, output buffers and the
sequentially addressed data is output. When SOE is HIGH, the SI/O output bus is in the High-impedance state.
SOE is asynchronous to SCLK.
When RST is LOW, all internal registers are set to their default state, the address pointer is setto zero and the
EOB
1
and EOB2 flags are set HIGH. Rst is asynchronous to SCLK.
3016 tbl 02
NOTE:
1. "I/O" is bidirectional input and output. "I" is input and "O" is output.
6.42
3
IDT70825S/L
High-Speed 8K x 16 Sequential Access Random Access Memory
Military, Industrial and Commercial Temperature Ranges
Absolute Maximum Ratings(1)
Recommended Operating
TemperatureandSupplyVoltage(1,2)
Symbol
Rating
Commercial
& Industrial
Military
Unit
Grade
Ambient
Temperature
GND
Vcc
(2)
V
TERM
Terminal Voltage
with Respect
to GND
-0.5 to +7.0
-0.5 to +7.0
V
Military
-55OC to +125OC
0OC to +70OC
0V
0V
0V
5.0V
+
+
+
10%
T
BIAS
Temperature
Under Bias
-55 to +125
-65 to +150
50
-65 to +135
-65 to +150
50
oC
oC
Commercial
Industrial
5.0V
5.0V
10%
-40OC to +85OC
10%
Storage
Temperature
TSTG
3016 tbl 04
NOTES:
DC Output
Current
mA
IOUT
1. This is the parameter TA. This is the "instant on" case temperature.
2. Industrial temperature: for specific speeds, packages and powers contact your
sales office.
3016 tbl 03
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operationofthe device atthese oranyotherconditions above those indicatedinthe
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
Recommended DC Operating
Conditions
2. VTERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of VTERM > Vcc + 10%.
Symbol
Parameter
Supply Voltage
GND Ground
Min.
Typ. Max. Unit
VCC
4.5
5.0
5.5
0
V
V
V
0
0
Capacitance
____
V
IH
Input High Voltage
Input Low Voltage
2.2
6.0(2)
0.8
(TA = +25°C, f = 1.0mhz, TQFP only)
____
VIL
-0.5(1)
V
Symbol
Parameter
Input Capacitance
Output Capacitance
Conditions(2)
IN = 3dV
OUT = 3dV
Max. Unit
3016 tbl 05
NOTES:
CIN
V
9
pF
1. VIL > –1.5V for pulse width less than 10ns.
2. VTERM must not exceed Vcc + 10%.
COUT
V
10
pF
3016 tbl 06
NOTES:
1. This parameter is determined by device characterization, but is not production
tested.
2. 3dV references the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VCC = 5.0V ± 10%)
70825S
70825L
Symbol
|ILI
|ILO
Parameter
Input Leakage Current
Test Conditions
CC = 5.5V, VIN = 0V to VCC
Min.
Max.
5
Min.
Max.
Unit
µA
µA
V
___
___
|
V
1
1
___
___
___
___
|
Output Leakage Current
Output Low Voltage
Output High Voltage
V
OUT = 0V to VCC
OL = +4mA
OH = -4mA
5
VOL
I
0.4
0.4
___
___
VOH
I
2.4
2.4
V
3016 tbl 07
4
IDT70825S/L
High-Speed 8K x 16 Sequential Access Random Access Memory
Military, Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range(1,2,8) (VCC = 5.0V ± 10%)
70825X20
70825X25
70825X35
Com'l &
Military
70825X45
Com'l &
Military
Com'l Only
Com'l Only
Symbol
Parameter
Test Condition
Version
COM'L
Typ.
180
Max.
380
Typ.
170
Max.
360
Typ.
Max.
Typ.
Max.
Unit
ICC
Dynamic Operating
Current
(Both Ports Active)
S
L
160
160
340
290
155
155
340
290
mA
CE = VIL
,
180
330
170
310
Outputs Disabled
(5 )
SCE = VIL
____
____
____
____
____
____
____
____
(3)
MIL &
IND
S
L
160
160
400
340
155
155
400
340
f = fMAX
(7)
I
SB1
Standby Current
(Both Ports - TTL
Level Inputs)
COM'L
S
L
25
25
70
50
25
25
70
50
20
20
70
50
16
16
70
50
mA
mA
mA
SCE and CE > VIH
CMD = VIH
(3)
f = fMAX
____
____
____
____
____
____
____
____
MIL &
IND
S
L
20
20
85
65
16
16
85
65
ISB2
Standby Current
(One Port - TTL
Level Inputs)
COM'L
S
L
115
115
260
230
105
105
250
220
95
95
240
210
90
90
240
210
CE or SCE = VIH
Active Port Outputs Disabled,
(3)
f=fMAX
____
____
____
____
____
____
____
____
MIL &
IND
S
L
95
95
290
250
90
90
290
250
ISB3
Full Standby Current
(Both Ports -
CMOS Level Inputs)
Both Ports CE and
COM'L
S
L
1.0
0.2
15
5
1.0
0.2
15
5
1.0
0.2
15
5
1.0
0.2
15
5
(6,7)
SCE > VCC - 0.2V
VIN > VCC - 0.2V or
V
IN < 0.2V, f = 0(4)
____
____
____
____
____
____
____
____
MIL &
IND
S
L
1.0
0.2
30
10
1.0
0.2
30
10
ISB4
Full Standby Current
(One Port -
CMOS Level Inputs)
One Port CE or
mA
COM'L
S
L
110
110
240
200
100
100
230
190
90
90
220
180
85
85
220
180
(6)
SCE > VCC - 0.2V
Outputs Disabled (Active Port)
____
___
____
____
____
____
____
____
MIL &
IND
S
L
90
90
260
215
85
85
260
215
V
IN > VCC - 0.2V or VIN < 0.2V
(3)
f = fMAX
3016 tbl 08
NOTES:
1. 'X' in part number indicates power rating (S or L).
2. VCC = 5V, TA = +25°C; guaranteed by device characterization but not production tested.
3. At f = fMAX, address, control lines (except Output Enable), and SCLK are cycling at the maximum frequency read cycle of 1/tRC.
4. f = 0 means no address or control lines change.
5. SCE may transition, but is LOW (SCE=VIL) when clocked in by SCLK.
6. SCE may be - 0.2V, after it is clocked in, since SCLK=VIH must be clocked in prior to powerdown.
7. If one port is enabled (either CE or SCE = LOW) then the other port is disabled (SCE or CE = HIGH, respectively). CMOS HIGH > Vcc - 0.2V and LOW < 0.2V, and
TTL HIGH = VIH and LOW = VIL.
8. Industrial temperature: for other speeds, packages and powers contact your sales office.
Data Retention Characteristics Over All Temperature Ranges
(L Version Only) (VLC < 0.2V, VHC > VCC - 0.2V)
Symbol
Parameter
Test Condition
Min.
Typ.(1)
Max.
Unit
V
___
___
V
DR
VCC for Data Retention
VCC = 2V
2.0
___
I
CCDR
Data Retention Current
µA
CE > VHC
IN = VHC or = VLC
MIL. & IND.
COM'L.
100
4000
___
___
(2)
V
100
1500
(3)
CDR
SCE = VHC(4) when SCLK = ↑
CMD = VHC
___
___
t
Chip Deselect to Data Retention Time
Operation Recovery Time
V
(3)
___
___
tR
t
RC
V
3016 tbl 09
NOTES :
1. TA = +25°C, VCC = 2V; guaranteed by device characterization but not production tested.
2. tRC = Read Cycle Time
3. This parameter is guaranteed by device characterization, but is not production tested.
4. To initiate data retention, SCE = VIH must be clocked in.
6.42
5
IDT70825S/L
High-Speed 8K x 16 Sequential Access Random Access Memory
Military, Industrial and Commercial Temperature Ranges
Data Retention and Power Down/Up Waveform
(Random and Sequential Port)(1,2)
DATA RETENTION MODE
4.5V
≥
VDR 2V
4.5V
VCC
tCDR
tR
VDR
VIH
CE
VIH
SCLK
SCE
tPD
tPU
ICC
3016 drw 04
I
SB
I
SB
NOTES:
1. SCE is synchronized to the sequential clock input.
2. CMD > VCC - 0.2V.
5V
5V
893Ω
893Ω
DATAOUT
DATAOUT
30pF
5pF*
347Ω
347Ω
3016 drw 06
3016 drw 05
Figure 1. AC Output Test Load
Figure 2. Output Test Load (for tCLZ, tBLZ, tOLZ, tCHZ,
tBHZ, tOHZ, tWHZ, tCKHZ, and tCKLZ)
*Including scope and jig.
8
7
6
AC TEST CONDITIONS
Input Pulse Levels
GND to 3.0V
Input Rise/Fall Times
3ns Max.
1.5V
tAA/tCD/tEB
(Typical, ns)
5
4
3
2
1
Input Timing Reference Levels
Output Reference Levels
Output Load
1.5V
10pF is the I/O
capacitance of
this device, and
30pF is the AC
Test Load
Figures 1,2 and 3
3016 tbl 10
capacitance.
-1
-2
-3
20 40 60 80 100 120 140 160 180 200
,
3016 drw 07
CAPACITANCE (pF)
Figure 3. Lumped Capacitance Load Typical Derating Curve
6
IDT70825S/L
High-Speed 8K x 16 Sequential Access Random Access Memory
Military, Industrial and Commercial Temperature Ranges
Truth Table I: Random Access Read and Write(1,2)
Inputs/Outputs
R/W
H
H
H
L
I/O
0
-I/O
7
I/O8-I/O15
Mode
CE
L
CMD
H
OE
L
LB
L
UB
L
DATAOUT
DATAOUT
High-Z
DATAIN
DATAIN
High-Z
DATAOUT Read both Bytes.
L
H
L
L
H
L
High-Z
Read lower Byte only.
L
H
L
H
L
DATAOUT Read upper Byte only.
(3)
L
H
H
L
DATAIN
High-Z
DATAIN
High-Z
High-Z
High-Z
DATAIN
DATAOUT
Write to both Bytes.
(3)
L
H
L
H
L
H
L
Write to lower Byte only.
Write to upper Byte only.
(3)
L
H
L
H
X
H
X
H
X
X
H
H
L
H
X
H
X
L
X
X
H
High-Z
Both Bytes deselected and powered down.
Outputs disabled but not powered down.
Both Bytes deselected but not powered down.
H
High-Z
L
H
High-Z
(3)
(4)
(4)
H
H
L
H
L
L
L
DATAIN
DATAOUT
Write I/O
0-I/O11 to the Buffer Command Register.
(4)
(4)
L
L
L
H
Read contents of the Buffer Command Register
via I/O -I/O12.
0
3016 tbl 11
NOTES:
1. H = VIH, L = VIL, X = Don't Care, and High-Z = High-impedance.
2. RST, SCE, CNTEN, SR/W, SLD, SSTRT1, SSTRT2, SCLK, SI/O0-SI/O15, EOB1, EOB2, and SOE are unrelated to the random access port control and operation.
3. If OE = VIL during write, tWHZ must be added to the tWP or tCW write pulse width to allow the bus to float prior to being driven.
4. Byte operations to control register using UB and LB separately are also allowed.
Truth Table II: Sequential Read(1,2,3,6,8)
Inputs/Outputs
SCLK
SR/W
H
SI/O
[EOB
[EOB1 - 1
[EOB
[EOB2 - 1
High-Z
MODE
Counter Advanced Sequential Read with EOB
Non-Counter Advanced Sequential Read, without EOB
Counter Advanced Sequential Read with EOB reched.
Non-Counter Advanced Sequential Read without EOB
Counter Advanced Sequential Non-Read with EOB
SCE
L
CNTEN
EOB
1
EOB
2
SOE
L
L
H
L
H
L
LOW LAST
LAST LAST
1
]
1 reached.
↑
↑
↑
↑
↑
L
H
L
]
1
reached
L
H
LAST
LAST LAST
LOW LOW
LOW
L
2]
2
L
H
L
]
2
reached.
L
H
H
1
and EOB2 reached.
3016 tbl 12
Truth Table III: Sequential Write(1,2,3,4,5,6,7,8)
Inputs/Outputs
SCLK
SR/W
L
SI/O
SI/OIN Non-Counter Advanced Sequential Write, without EOB
SI/OIN Coounter Advanced Sequential Write with EOB and EOB
MODE
SCE CNTEN
EOB
LAST LAST
LOW LOW
1
EOB
2
SOE
H
L
L
H
L
H
L
1
or EOB
2 reached.
↑
L
H
1
2
reached.
↑
H
H
X
LAST LAST
NEXT NEXT
X
High-Z No Write or Read due to Sequential port Deselect. No counter advance.
High-Z No Write or Read due to Sequential port Deselect. Counter does advance.
↑
↑
X
X
3016 tbl 13
NOTES:
1. H = VIH, L = VIL, X = Don't Care, and HIGH-Z = High-impedance. LOW = VOL.
2. RST, SLD, SSTRT1, SSTRT2 are continuously HIGH during a sequential write access, other than pointer access operations.
3. CE, OE, R/W, CMD, LB, UB, and I/O0-I/O15 are unrelated to the sequential port control and operation except for CMD which must not be used concurrently with the sequential
port operation (due to the counter and register control). CMD should be HIGH (CMD = VIH) during sequential port access.
4. SOE must be HIGH (SOE=VIH) prior to write conditions only if the previous cycle is a read cycle, since the data being written must be an input at the rising edge of the clock
during the cycle in which SR/W = VIL.
5. SI/OIN refers to SI/O0-SI/O15 inputs.
6. "LAST" refers to the previous value still being output, no change.
7. Termination of a write is done on the LOW-to-HIGH transition of SCLK if SR/W or SCE is HIGH.
8. When CLKEN=LOW, the address is incremented on the next rising edge before any operation takes place. See the diagrams called "Sequential Counter Enable Cycle after
Reset, Read (and write) Cycle".
6.42
7
IDT70825S/L
High-Speed 8K x 16 Sequential Access Random Access Memory
Military, Industrial and Commercial Temperature Ranges
Truth Table IV: Sequential Address Pointer Operations(1,2,3,4,5)
Inputs/Outputs
SCLK
MODE
Start address for Buffer #1 loaded into Address Pointer.
Start address for Buffer #2 loaded into Address Pointer.
SLD
H
SSTRT
1
SSTRT
2
SOE
X
L
H
H
H
L
↑
↑
↑
H
X
(6)
L
H
H
Data on SI/O0-SI/O12 loaded into Address Pointer.
3016 tbl 14
NOTES:
1. H = VIH, L = VIL, X = Don't Care, and High-Z = High-impedance.
2. RST is continuously HIGH. The conditions of SCE, CNTEN, and SR/W are unrelated to the sequential address pointer operations.
3. CE, OE, R/W, LB, UB, and I/O0-I/O15 are unrelated to the sequential port control and operation, except for CMD which must not be used concurrently with the sequential port
operation (due to the counter and register control). CMD should be HIGH (CMD = VIH) during sequential port access.
4. Address pointer can also change when it reaches an end of buffer address. See Flow Control Bits table.
5. When SLD is sampled LOW, there is an internal delay of one cycle before the address pointer changes. The state of CNTEN is ignored and the address is not incremented
during the two cycles.
6. SOE may be LOW with SCE deselect or in the write mode using SR/W.
Address Pointer Load Control (SLD)
data-in register. SSTRT1, SSTRT2 may not be low while SLD is LOW,
or during the cycle following SLD. The SSTRT1 and SSTRT2 require
only one clock cycle, since these addresses are pre-loaded in the
registers already.
In SLD mode, there is an internal delay of one cycle before the
address pointer changes in the cycle following SLD. When SLD is
LOW, data on the inputs SI/O0-SI/O12 is loaded into a data-in register
on the LOW-to-HIGH transition of SCLK. On the cycle following SLD,
the address pointer changes to the address location contained in the
SLD MODE(1)
SLD
SCLK(1)
B
A
ADDRIN
C
SI/O0-12
DATAOUT
SSTRT(1 or 2)
3016 drw 08
NOTE:
1. At SCLK edge (A), SI/O0-SI/O12 data is loaded into a data-in register. At edge (B), contents of the data-in register are loaded into the address pointer (i.e. address
pointer changes). At SCLK edge (A), SSTRT1 and SSTRT2 must be HIGH to ensure for proper sequential address pointer loading. At SCLK edge (B), SLD and
SSTRT1,2 must be HIGH to ensure for proper sequential address pointer loading. For SSTRT1 or SSTRT2, the data to be read will be ready for edge (B), while data will
not be ready at edge (B) when SLD is used, but will be ready at edge (C).
Sequential Load of Address into Pointer/Counter(1)
15
14
13
12 ------------------------------------------------------------------------------------------------------------ 0
Address Loaded into Pointer
LSB SI/O BITS
MSB
H
H
H
3016 drw 09
NOTE:
1. "H" = VIH for the SI/O intput state.
8
IDT70825S/L
High-Speed 8K x 16 Sequential Access Random Access Memory
Military, Industrial and Commercial Temperature Ranges
Reset (RST)
Register
Address Pointer
Contents
0
Setting RST LOW resets the control state of the SARAM. RST
functions asynchronously of SCLK, (i.e. not registered). The default
states after a reset operation are as follows:
Cleared to High State
BUFFER CHAINING
EOB Flags
Buffer Flow Mode
Start Address Buffer #1
End Address Buffer #1
Start Address Buffer #2
End Address Buffer #2
Registered State
0
(1)
4095
4096
8191
(4K)
(4K+1)
(8K)
SCE = VIH, SR/W = VIL
3016 tbl 15
BUFFER COMMAND MODE (CMD)
Buffer Command Mode (CMD) allows the random access port to Command Mode also allows reading and clearing the status of the
control the state of the two buffers. Address pins A0-A2 and I/O pins I/ EOBflags.SevendifferentCMDcasesareavailabledependingonthe
O0-I/O12 are used to access the start of buffer and the end of buffer conditions of A0-A2 and R/W. Address bits A3-A12 and data I/O bits
addresses and to set the flow control mode of each buffer. The Buffer I/O13-I/O15 are not used during this operation.
Random Access Port CMD Mode(1)
Case #
A
2
-A
0
R/W
0 (1)
0 (1)
0 (1)
0 (1)
0 (1)
0
DESCRIPTIONS
-I/O12
-I/O12
-I/O12
-I/O12
1
2
3
4
5
6
7
8
000
001
Write (read) the start address of Buffer #1 through I/O
Write (read) the end address of Buffer #1 through I/O
Write (read) the start address of Buffer #2 through I/O
Write (read) the end address of Buffer #2 through I/O
Write (read) flow control register.
Write only - clear EOB and/or EOB
0
.
0
.
010
0
.
011
0
.
100
101
1
2 flag.
101
1
Read only - flag status register.
(Reserved)
110/111
(X)
3016 tbl 16
NOTES:
1. R/W input "0(1)" indicates a write(0) or read(1) occurring with the same address input.
Cases 1 through 4: Start and End of Buffer Register Description(1,2)
15
14
13
12 ------------------------------------------------------------------------------------------------------------ 0
Address Loaded into Buffer
LSB I/O BITS
MSB
H
H
H
3016 drw 10
NOTES:
1. "H" = VOH for I/O in the output state and "Don't Cares" for I/O in the input state.
2. A write into the buffer occurs when R/W = VIL and a read when R/W = VIH. EOB1/SOB1 and EOB2/SOB2 are chosen through address A0-A2 while CMD = VIL and CE = VIH.
Case 5: Buffer Flow Modes
Within the SARAM, the user can designate one of four buffer flow start address of the other buffer. In STOP mode, the address pointer
modes for each buffer. Each buffer flow mode defines a unique set of stops incrementing after it reaches the end of the buffer. In LINEAR
actions for the sequential port address pointer and EOB flags. In mode, the address pointer ignores the end of buffer address and
BUFFER CHAINING mode, after the address pointer reaches the end increments past it, but sets the EOB flag. MASK mode is the same as
ofthebuffer,itsetsthecorrespondingEOBflagandcontinuesfromthe LINEAR mode except EOB flags are not set.
6.42
9
IDT70825S/L
High-Speed 8K x 16 Sequential Access Random Access Memory
Military, Industrial and Commercial Temperature Ranges
Flow Control Register Description(1,2)
0
15
MSB
H
H
H
H
H
H
H
H
H
H
4
3
2
1
0
LSB I/O BITS
H
Counter Release
(STOP Mode Only)
Buffer #1 flow control
Buffer #2 flow control
3016 drw 11
NOTES:
1. "H" = VOH for I/O in the output state and "Don't Cares"' for I/O in the input state.
2. Writing a 0 into bit 4 releases the address pointer after it is stopped due to the STOP mode and allows sequential write operations to resume. This occurs asynchronously
of SCLK, and therefore caution should be taken. The pointer will be at address EOB+2 on the next rising edge of SCLK that is enabled by CNTEN. The pointer is also released
by RST, SLD, SSTRT1 and SSTRT2 operations.
Flow Control Bits
Flow Control
Bit 1 & Bit 0
(Bit 3 & Bit 2)
Mode
Functional Description
00
01
BUFFER
EOB
1
(EOB2) is asserted (active LOW output) when the pointer matches the end address of Buffer #1 (Buffer #2). The
(1,3)
CHAINING
pointer value is changed to the start address of Buffer #2 (Buffer #1)
STOP
EOB
1
(EOB2) is asserted when the pointer matches the end address of Buffer #1 (Buffer #2).
The address pointer will stop incrementing when it reaches the next address (EOB address + 1), if CNTEN is LOW on the
next clock's rising edge. Otherwise, the address pointer will stop incrementing on EOB. Sequential write operations are
inhibited after the address pointer is stopped. The pointer can be released by bit 4 of the flow control register.(1,2,4)
10
11
LINEAR
MASK
EOB
1
(EOB2) is asserted when the pointer matches the end address of Buffer #1 (Buffer #2). The pointer keeps
incrementing for further operations.(1)
EOB
1
(EOB2) is not asserted when the pointer reaches the end address of Buffer #1 (Buffer #2), although the flag status
bits will be set. The pointer keeps incrementing for further operations.
3016 tbl 17
NOTES:
1. EOB1 and EOB2 may be asserted (set) at the same time, if both end addresses have been loaded with the same value.
2. CMD flow control bits are unchanged, the count does not continue advancement.
3. If EOB1 and EOB2 are equal, then the pointer will jump to the start of Buffer #1.
4. If counter has stopped at EOBx and was released by bit 4 of the flow control register, CNTEN must be LOW on the next rising edge of SCLK otherwise the flow control will
remain in the STOP mode.
Cases 6 and 7: Flag Status Register Bit Description(1)
0
0
15
H
MSB
H
H
H
H
H
H
H
H
H
H
H
H
H
1
LSB I/O BITS
End of buffer flag for Buffer #1
End of buffer flag for Buffer #2
NOTE:
1. "H" = VOH for I/O in the output state and "Don't Cares" for I/O in the input state.
3016 drw 12
Cases 6: Flag Status Register
Write Conditions(1)
Case 7: Flag Status Register Read
Conditions
Flag Status Bit 0, (Bit 1)
Functional Description
Flag Status Bit 0, (Bit 1)
Functional Description
0
1
Clears Buffer Flag EOB
1
, (EOB2).
0
EOB
1
(EOB2) flag has not been set, the
No change to the Buffer Flag.(2)
pointer has notreached the end of the
buffer.
3016 tbl 18
NOTES:
1
EOB
1
(EOB2) flag has been set, the
1. Either bit 0 or bit 1, or both bits, may be changed simultaneously. One may be
cleared while the second is left alone or cleared.
2. Remains as it was prior to the CMD operation, either HIGH (1) or LOW (0).
pointer has reached the end of the
buffer.
3016 tbl 19
Cases 8 and 9: (Reserved)
Illegal operations. All outputs will be HIGH on the I/O bus during a READ.
10
IDT70825S/L
High-Speed 8K x 16 Sequential Access Random Access Memory
Military, Industrial and Commercial Temperature Ranges
Random Access port: AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range(2,4,5)
70825X20
70825X25
70825X35
Com'l &
Military
70825X45
Com'l &
Military
Com'l Only
Com'l Only
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
READ CYCLE
____
____
____
____
t
RC
AA
ACE
BE
OE
OH
CL Z
BLZ
OLZ
CHZ
BHZ
OHZ
PU
PD
Read Cycle Time
20
25
35
45
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
____
____
____
____
t
Address Access Time
20
20
20
25
25
25
35
35
35
45
45
55
____
____
____
____
____
____
____
____
____
____
____
____
t
Chip Enable Access Time
Byte Enable Access Time
Output Enable Access Time
Output Hold from Address Change
Chip Select Low-Z Time(1)
Byte Enable Low-Z Time(1)
Output Enable Low-Z Time(1)
Chip Select High-Z Time(1)
Byte Enable High-Z Time(1)
Output Enable High-Z Time(1)
Chip Select Power Up Time
Chip Select Power Down Time
t
t
10
10
15
20
____
____
____
____
t
3
3
3
3
3
3
3
3
3
3
3
3
____
____
____
____
____
____
____
____
____
____
____
____
t
t
t
2
2
2
2
____
____
____
____
t
10
10
12
12
15
15
15
15
____
____
____
____
____
____
____
____
t
t
9
11
15
15
____
____
____
____
t
0
0
0
0
____
____
____
____
t
20
25
35
45
ns
3016 tbl 20
Random Access Port: AC Electrical Characteristics
Over the Operating Temperature and Supply Voltage(2,4,5)
70825X20
70825X25
70825X35
Com'l &
Military
70825X45
Com'l &
Military
Com'l Only
Com'l Only
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
WRITE CYCLE
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
t
WC
CW
AW
AS
WP
BP
WR
WHZ
DW
DH
OW
Write Cycle Time
20
15
15
0
25
20
20
0
35
25
25
0
45
30
30
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
Chip Enable to End-of-Write
Address Valid to End-of-Write(3)
Address Set-up Time
t
t
(3)
t
Write Pulse Width
13
15
20
20
25
25
30
30
t
Byte Enable Pulse Width(3 )
Write Recovery Time
t
0
0
0
0
Write Enable Output in High-Z Time(1)
Data Set-up Time
10
12
15
15
____
____
____
____
t
____
____
____
____
t
13
0
15
0
20
0
25
0
____
____
____
____
____
____
____
____
t
Data Hold Time
t
Output Active from End-of-Write
3
3
3
3
ns
3016 tbl 21
NOTES:
1. Transition measured at 0mV from steady state. This parameter is guaranteed with the AC Output Test Load (Figure 1) by device characterization, but is not production
tested.
2. 'X' in part number indicates power rating (S or L).
3. OE is continuously HIGH, OE = VIH. If during the R/W controlled write cycle the OE is LOW, tWP must be greater or equal to tWHZ + tDW to allow the I/O drivers to turn off and
on the data to be placed on the bus for the required tDW. If OE is HIGH during the R/W controlled write cycle, this requirement does not apply and the minimum write pulse
is the specified tWP. For the CE controlled write cycle, OE may be LOW with no degradation to tCW timing.
4. CMD access follows standard timing listed for both read and write accesses, (CE = VIH when CMD = VIL) or (CMD = VIH when CE = VIL).
5. Industrial temperature: for specific speeds, packages and powers contact your sales office.
6.42
11
IDT70825S/L
High-Speed 8K x 16 Sequential Access Random Access Memory
Military, Industrial and Commercial Temperature Ranges
Waveform of Read Cycles: Random Access Port(1,2)
tRC
ADDR
tAA
tOH
(2)
ACS
t
CE
tCHZ
tCLZ
LB, UB
tBHZ
tBE
tBLZ
OE
tOE
tOHZ
tOLZ
Valid Data Out
I/OOUT
3016 drw 13
NOTES:
1. R/W is HIGH for read cycle.
2. Address valid prior to or coincident with CE transition LOW; otherwise tAA is the limiting parameter.
Waveform of Read Cycles: Buffer Command Mode
t
RC
ADDR
tAA
t
OH
CMD(1)
t
ACS
t
CHZ
BHZ
tCLZ
LB, UB
t
t
BE
tBLZ
OE
t
OE
t
OHZ
t
OLZ
I/OOUT
Valid Data Out
3016 drw 14
NOTE:
1. CE = VIH when CMD = VIL.
12
IDT70825S/L
High-Speed 8K x 16 Sequential Access Random Access Memory
Military, Industrial and Commercial Temperature Ranges
Waveform of Write Cycle No.1 (R/W Controlled Timing)
Random Access Port(1,6)
tWC
ADDR
R/W
tAW
(3)
(2)
WP
tWR
t
tAS
CE, LB, UB(8)
(5)
tDH
tDW
I/OIN
Valid Data In
OE
tOHZ
tWHZ
(4)
Data Out
Data Out(4)
I/OOUT
t
ACS
tOW
3016 drw 15
tBE
Waveform of Write Cycle No.2 (CE, LB, and/or UB Controlled Timing)
Random Access Port(1,6,7)
t
WC
ADDR
t
AW
CE, LB, UB (8)
(5)
tAS
(3)
WR
(2)
t
t
t
CW
(2)
BP
R/W
t
DW
tDH
I/OIN
Valid Data
3016 drw 16
NOTES:
1. R/W, CE, or LB and UB must be inactive during all address transitions.
2. A write occurs during the overlap of R/W = VIL, CE = VIL and LB = VIL and/or UB = VIL.
3. tWR is measured from the earlier of CE (and LB and/or UB) or R/W going HIGH to the end of the write cycle.
4. During this period, I/O pins are in the output state and the input signals must not be applied.
5. If the CE LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the High-impedance state.
6. OE is continuously HIGH, OE = VIH. If during the R/W controlled write cycle the OE is LOW, tWP must be greater or equal to tWHZ + tDW to allow the I/O drivers to turn off and
on the data to be placed on the bus for the required tDW. If OE is HIGH during the R/W controlled write cycle, this requirement does not apply and the minimum write pulse
is the specified tWP. For the CE controlled write cycle, OE may be LOW with no degregation to tCW timing.
7. I/OOUT is never enabled, therefore the output is in HIGH-Z state during the entire write cycle.
8. CMD access follows the standard CE access described above. If CMD = VIL, then CE must = VIH or, when CE = VIL, CMD must = VIH.
6.42
13
IDT70825S/L
High-Speed 8K x 16 Sequential Access Random Access Memory
Military, Industrial and Commercial Temperature Ranges
Sequential Port: AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range(1,3)
70825X20
70825X25
70825X35
Com'l &
Military
70825X45
Com'l &
Military
Com'l Only
Com'l Only
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
READ CYCLE
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
t
CYC
CH
CL
ES
EH
SOE
OLZ
OHZ
CD
CKHZ
CKLZ
EB
Sequential Clock Cycle Time
25
10
10
5
30
12
12
5
40
15
15
6
50
18
18
6
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
Clock Pulse HIGH
t
Clock Pulse LOW
t
Count Enable and Address Pointer Set-up Time
Count Enable and Address Pointer Hold Time
Output Enable to Data Valid
Output Enable Low-Z Time(2)
Output Enable High-Z Time(2)
Clock to Valid Data
t
2
2
2
2
____
____
____
____
t
8
10
15
20
____
____
____
____
t
2
2
2
2
____
____
____
____
t
9
11
25
15
35
15
45
____
____
____
____
____
____
____
____
t
20
t
Clock High-Z Time(2)
12
14
17
20
t
Clock Low-Z Time(2)
3
3
3
3
____
____
____
____
____
____
____
____
t
Clock to EOB
13
15
18
23
ns
3016 tbl 22
Sequential Port: AC Electrical Characteristics
Over the Operating Temperature and Supply Voltage(1,3)
70825X20
70825X25
70825X35
Com'l &
Military
70825X45
Com'l &
Military
Com'l Only
Com'l Only
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
WRITE CYCLE
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
t
CYC
FS
WS
WH
DS
DH
Sequential Clock Cycle Time
25
13
5
30
15
5
40
20
6
50
20
6
ns
ns
ns
ns
ns
t
Flow Restart Time
t
Chip Select and Read/Write Set-up Time
Chip Select and Read/Write Hold Time
Input Data Set-up Time
t
2
2
2
2
t
5
5
6
6
t
Input Data Hold Time
2
2
2
2
ns
3016 tbl 23
NOTES:
1. 'X' in part number indicates power rating (S or L).
2. Transition measured at 0mV from steady state. This parameter is guaranteed with the AC Output Test Load (Figure 1) by device characterization, but is not production
tested.
3. Industrial temperature: for specific speeds, packages and powers contact your sales office.
14
IDT70825S/L
High-Speed 8K x 16 Sequential Access Random Access Memory
Military, Industrial and Commercial Temperature Ranges
Sequential Port: AC Electrical Characteristics
Over the Operating Temperature and Supply Voltage(1,2)
70825X20
70825X25
70825X35
Com'l &
Military
70825X45
Com'l &
Military
Com'l Only
Com'l Only
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
RESET CYCLE
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
t
RSPW
WERS
RSRC
RSFV
Reset Pulse Width
13
10
10
15
15
10
10
20
20
10
10
25
20
10
10
25
ns
ns
ns
t
Write Enable HIGH to Reset HIGH
Reset HIGH to Write Enable LOW
Reset HIGH to Flag Valid
t
t
ns
3016 tbl 24
NOTE:
1. 'X' in part number indicates power rating (S or L).
2. Industrial temperature: for specific speeds, packages and powers contact your sales office.
Sequential Port: Write, Pointer Load Non-Incrementing Read
tCYC
tCH
tCL
SCLK
tEH
tES
(2)
(3)
CNTEN
tEH
tES
(1)
SLD
tDS
tDH
HIGH IMPEDANCE
SI/OIN
Dx
A0
t
WS
WS
t
WS
t
WH
t
WH
SR/W
SCE
t
tWS
tWH
tWH
t
tCCKSHZZ
tCD
SOE
tSOE
tOLZ
tOHZ
SI/OOUT
D0
D0
D0
tCKLZ
3016 drw 17
NOTES:
1. If SLD = VIL, then address will be clocked in on the SCLK's rising edge.
2. If CNTEN = VIH for the SCLK's rising edge, the internal address counter will not advance.
3. Pointer is not incremented on cycle immediately following SLD even if CNTEN is LOW.
6.42
15
IDT70825S/L
High-Speed 8K x 16 Sequential Access Random Access Memory
Military, Industrial and Commercial Temperature Ranges
Sequential Port: Write, Pointer Load, Burst Read
tCYC
tCH
tCL
SCLK
CNTEN
SLD
tEH
tES
(3)
(2)
t
EH
(1)
t
ES
t
DS
t
DS
tDH
tDH
HIGH IMPEDANCE
D2
SI/OIN
Dx
A0
tWS
t
WS
tWH
t
WH
SR/W
SCE
t
WS
tWS
tWH
tWH
tCD
tSOE
SOE
t
OLZ
tOHZ
(2)
SI/OOUT
D0
D1
3016 drw 18
t
CKLZ
NOTES:
1. If SLD = VIL, then address will be clocked in on the SCLK's rising edge.
2. If CNTEN = VIH for the SCLK's rising edge, the internal address counter will not advance.
3. Pointer is not incremented on cycle immediately following SLD even if CNTEN is LOW.
Read STRT/EOB Flag Timing - Sequential Port(1)
tCYC
tCH
tCL
SCLK
CNTEN
tEH
tES
(4)
(2)
tES
tEH
(1)
SSTRT1/2
t
DS
tDH
HIGH IMPEDANCE
SI/OIN
Dx
D3
tWS
tWS
tWH
t
WH
SR/W
SCE
SOE
tWS
tWS
tWH
t
WH
(3)
t
CD
t
SOE
t
OHZ
tOLZ
(5)
(2)
SI/OOUT
D2
D0
D1
tCKLZ
EOB1/2
tEB
3016 drw19
NOTES: (Also used in the Figure "Read STRT/EOB Flag Timing")
1. If SSTRT1 or SSTRT2 = VIL, then address will be clocked in on the SCLK's rising edge.
2. If CNTEN = VIH for the SCLK's rising edge, the internal address counter will not advance.
3. SOE will control the output and should be HIGH on power-up. If SCE = VIL and is clocked in while SR/W = VIH, the data addressed will be read out within that cycle. If SCE
= VIL and is clocked in while SR/W = VIL, the data addressed will be written to if the last cycle was a read. SOE may be used to control the bus contention and permit a write
on this cycle.
4. Unlike SLD case, CNTEN is not disabled on cycle immediately following SSTRT.
5. If SR/W = VIL, data would be written to D0 again since CNTEN = VIH.
6. SOE = VIL makes no difference at this point since the SR/W = VIL disables the output until SR/W = VIH is clocked in on the next rising clock edge.
16
IDT70825S/L
High-Speed 8K x 16 Sequential Access Random Access Memory
Military, Industrial and Commercial Temperature Ranges
Waveform of Write Cycles: Sequential Port
t
CYC
t
CH
tCL
SCLK
CNTEN
SLD
tEH
t
EH
(4)
t
ES
tES
(3)
tEH
t
ES
(1)
t
DS
t
DS
t
DS
tDH
t
DH
t
DH
HIGH IMPEDANCE
SI/OIN
Dx
A0
D0
D1
tWS
t
WS
tWH
t
WH
(4)
SR/W
SCE
tWS
tWS
tWH
tWH
tCKHZ
t
CD
(5)
SOE
t
OHZ
HIGH IMPEDANCE
SI/OOUT
D0
3016 drw 20
tCKLZ
Waveform of Burst Write Cycles: Sequential Port
tCYC
tCH
tCL
SCLK
t
EH
tES
(3)
(2)
CNTEN
SLD
tES
t
EH
(1)
t
DS
t
DS
t
DH
tDH
SI/OIN
Dx
A0
D0
D1
D2
tWS
tWS
t
WH
t
WH
SR/W
(5)
t
WS
t
WS
tWH
t
WH
SCE
SOE
(5)
tCKLZ
tCD
HIGH IMPEDANCE
SI/OOUT
D2
3016 drw 21
NOTES :
1. If SLD = VIL, then address will be clocked in on the SCLK's rising edge.
2. If CNTEN = VIH for the SCLK's rising edge, the internal address counter will not advance.
3. Pointer is not incrementing on cycle immediately following SLD even if CNTEN is LOW.
4. If SR/W = VIL, data would be written to D0 again since CNTEN = VIH.
5. SOE = VIL makes no difference at this point since the SR/W = VIL disables the output until SR/W = VIH is clocked in on the next rising clock edge.
6.42
17
IDT70825S/L
High-Speed 8K x 16 Sequential Access Random Access Memory
Military, Industrial and Commercial Temperature Ranges
Waveform of Write Cycles: Sequential Port (STRT/EOB Flag Timing)
tCH
tCL
SCLK
tEH
tES
(4)
(2)
CNTEN
tES
tEH
(1)
SSTRT1/2
tDS
tDH
HIGH IMPEDANCE
D0
D1
Dx
D2
SI/OIN
D3
t
WS
tWS
tWH
tWH
(5)
SR/W
SCE
SOE
tWS
t
WS
t
WH
tWH
(3)
(6)
t
CKLZ
tCD
HIGH IMPEDANCE
D3
SI/OOUT
tEB
EOB1/2
3016 drw 22
NOTES: (Also used in the Figure "Read STRT/EOB Flag Timing")
1. If SSTRT1 or SSTRT2 = VIL, then address will be clocked in on the SCLK's rising edge.
2. If CNTEN = VIH for the SCLK's rising edge, the internal address counter will not advance.
3. SOE will control the output and should be HIGH on power-up. If SCE = VIL and is clocked in while SR/W = VIH, the data addressed will be read out within that cycle. If
SCE = VIL and is clocked in while SR/W = VIL, the data addressed will be written to if the last cycle was a read. SOE may be used to control the bus contention and
permit a write on this cycle.
4. Unlike SLD case, CNTEN is not disabled on cycle immediately following SSTRT.
5. If SR/W = VIL, data would be written to D0 again since CNTEN = VIH.
6. SOE = VIL makes no difference at this point since the SR/W = VIL disables the output until SR/W = VIH is clocked in on the next rising clock edge.
18
IDT70825S/L
High-Speed 8K x 16 Sequential Access Random Access Memory
Military, Industrial and Commercial Temperature Ranges
Sequential Counter Enable Cycle After Reset, Write Cycle(1,4,6)
SCLK
RST
(2)
CNTEN
D0
D1
D2
D3
D4
SI/OIN
3016 drw 23
Sequential Counter Enable Cycle After Reset, Read Cycle(1,4)
SCLK
RST
(3)
SR/W
(5)
CNTEN
D0(5)
D3
D1
D2
SI/OOUT
3016 drw 24
NOTES:
1. 'D0' represents data input for Address=0, 'D1' represents data input for Address=1, etc.
1. If CNTEN=VIL then 'D1' would be written into 'A1' at this point.
3. Data output is available at a tCD after the SR/W=VIH is clocked. The RST sets SR/W=LOW internally and therefore disables the output until the next clock.
4. SCE=VIL throughout all cycles.
5. If CNTEN=VIL then 'D1' would be clocked out (read) at this point.
6. SR/W=VIL.
6.42
19
IDT70825S/L
High-Speed 8K x 16 Sequential Access Random Access Memory
Military, Industrial and Commercial Temperature Ranges
Random Access Port - Reset Timing
tRSPW
RST
tRSRC
R/W, SR/W CMD
or (UB + LB)(4)
tWERS
tRSFV
EOB(1 or 2)
Flag Valid
3016 drw 25
Random Access Port Restart Timing of Sequential Port(1)
0.5 x tCYC
tFS
SCLK
R/W
(2)
2-5ns
6-7ns
(3)
CLR
Block
3016 drw 26
(Internal Signal)
NOTES:
1. The sequential port is in the STOP mode and is being restarted from the random port by the Bit 4 Counter Release (see Case 5).
2. "0" is written to Bit 4 from the random port at address [A2 - A0] = 100, when CMD = VIL and CE = VIH. The device is in the Buffer Command Mode
(see Case 5).
3. CLR is an internal signal only and is shown for reference only.
4. Sequential port must also prohibit SR/W or SCE from being LOW for tWERS and tRSRC periods, or SCLK must not toggle from LOW-to-HIGH until after tRSRC.
20
IDT70825S/L
High-Speed 8K x 16 Sequential Access Random Access Memory
Military, Industrial and Commercial Temperature Ranges
Ordering Information
IDT 70825
X
XX
X
X
Device
Type
Power
Speed
Package
Process/
Temperature
Range
Blank Commercial (0°C to +70°C)
(1)
I
Industrial (-40°C to +85°C)
Military (–55°C to +125°C)
B
Compliant to MIL-PRF-38535 QML
G
84-pin PGA (G84-3)
PF
80-pin TQFP (PN80-1)
20
25
35
45
Commercial Only
Commercial Only
Speed in nanoseconds
Commercial & Military
Commercial & Military
S
L
Standard Power
Low Power
70825 128K (8K x 16) Sequential Access Random Access
Memory
3016 drw 27
NOTE:
1. Industrial temperature range is available.
For specific speeds, packages and powers contact your sales office.
Datasheet Document History
1/27/99:
Initiated datasheet document history
Converted to new format
Changeddrawingformat
Replaced IDT logo
Page 3 Changed"Clock"to"Inputs/Outputs"inRandompindescriptiontable
Added"Outputs"inSequentialpindescriptiontable
Changed±200mVto0mVinnotes
6/4/99:
11/10/99:
4/18/00:
5/23/00:
Page 4 Increasedstoragetemperatureparameter
ClarifiedTAparameter
Page 5 DCElectricalparameters–changedwordingfrom"open"to"disabled"
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6.42
21
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