71V016SA10PH [IDT]
Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44;
| 型号： | 71V016SA10PH |
| 厂家： | 
INTEGRATED DEVICE TECHNOLOGY |
| 描述： | Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 静态存储器 光电二极管 |
| 文件： | 总9页 (文件大小：907K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IDT71V016SA/HSA
3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
Features
Description
◆
64K x 16 advanced high-speed CMOS Static RAM
TheIDT71V016isa1,048,576-bithigh-speedStaticRAMorganized
as64Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliability
CMOStechnology.Thisstate-of-the-arttechnology,combinedwithinno-
vativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-
speedmemoryneeds.
◆
Equal access and cycle times
— Commercial:10/12/15/20ns
— Industrial:12/15/20ns
One Chip Select plus one Output Enable pin
◆
◆
Bidirectional data inputs and outputs directly
The IDT71V016 has an output enable pin which operates as fast
as 5ns, with address access times as fast as 10ns. All bidirectional
inputsandoutputsoftheIDT71V016areLVTTL-compatibleandoperation
isfromasingle3.3Vsupply.Fullystaticasynchronouscircuitryisused,
requiringnoclocks orrefreshforoperation.
LVTTL-compatible
Low power consumption via chip deselect
Upper and Lower Byte Enable Pins
Single 3.3V power supply
◆
◆
◆
◆
Available in 44-pin Plastic SOJ, 44-pin TSOP, and
The IDT71V016 is packaged in a JEDEC standard 44-pin Plastic
SOJ, a 44-pin TSOP Type II, and a 48-ball plastic 7 x 7 mm FBGA.
48-Ball Plastic FBGA packages
Functional Block Diagram
Output
Enable
Buffer
OE
Address
Buffers
Row / Column
Decoders
A0 – A15
I/O15
High
8
8
Chip
Enable
Buffer
Byte
CS
I/O
Buffer
I/O8
Sense
Amps
and
Write
Drivers
16
64K x 16
Memory
Array
Write
Enable
Buffer
WE
I/O7
I/O0
Low
Byte
I/O
8
8
Buffer
BHE
BLE
Byte
Enable
Buffers
3834 drw 01
OCTOBER 2008
1
©2007 IntegratedDeviceTechnology,Inc.
DSC-3834/10
IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
Commercial and Industrial Temperature Ranges
Pin Configurations
1
2
3
4
5
6
A
B
C
D
E
A
0
A
1
A
2
NC
BLE
OE
A
4
1
A
A
A
5
6
7
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A3
2
A2
3
I/O8
A3
A4
I/O0
BHE
I/O10
I/O11
I/O12
I/O13
NC
CS
A
1
4
OE
A0
5
BHE
BLE
I/O15
I/O14
I/O13
I/O12
I/O9
A5
A6
I/O
1
I/O2
CS
I/O
I/O
I/O
6
0
7
VSS
NC
NC
A7
I/O
3
VDD
1
8
2
9
VDD
NC
I/O
4
VSS
I/O3
10
11
12
13
14
15
16
17
18
19
20
21
22
SO44-1
SO44-2
V
DD
V
V
SS
DD
VSS
F
I/O14
I/O15
NC
A14
A15
I/O
5
I/O6
I/O
I/O
I/O
I/O
WE
4
I/O11
I/O10
5
G
H
A12
A13
I/O7
WE
6
I/O
I/O
9
8
7
A8
A9
A10
A11
NC
NC
A15
A14
A13
A12
A
A
A
A
8
3834 tbl 02a
FBGA (BF48-1)
Top View
9
10
11
NC
NC
Pin Description
3834 drw 02
SOJ/TSOP
Top View
Truth Table(1)
CS
H
L
L
L
L
L
L
L
L
OE
X
L
WE
X
H
H
H
L
BLE
BHE
X
H
L
I/O
0
-I/O
7
I/O
8
-I/O15
Function
Deselected – Standby
X
L
High-Z
DATAOUT
High-Z
High-Z
High-Z
Low Byte Read
High Byte Read
Word Read
L
H
L
DATAOUT
DATAOUT
DATAIN
High-Z
L
L
DATAOUT
DATAIN
DATAIN
High-Z
X
X
X
H
X
L
L
Word Write
L
L
H
L
Low Byte Write
High Byte Write
Outputs Disabled
Outputs Disabled
L
H
X
H
DATAIN
High-Z
H
X
X
H
High-Z
High-Z
High-Z
3834 tbl 02
NOTE:
1. H = VIH, L = VIL, X = Don't care.
6.422
IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
Commercial and Industrial Temperature Ranges
Absolute Maximum Ratings(1)
Recommended Operating
Temperature and Supply Voltage
Symbol
Rating
Value
Unit
VDD
Supply Voltage Relative to
–0.5 to +4.6
V
Grade
Temperature
0°C to +70°C
-40°C to +85°C
VSS
VDD
VSS
Commercial
Industrial
0V
0V
See Below
Terminal Voltage Relative
to VSS
–0.5 to VDD+0.5
V
VIN, VOUT
See Below
3834 tbl 04
T
BIAS
Temperature Under Bias
Storage Temperature
Power Dissipation
–55 to +125
–55 to +125
1.25
oC
oC
W
TSTG
Recommended DC Operating
Conditions
P
T
IOUT
DC Output Current
50
mA
Symbol
Parameter
Min.
3.15
3.0
Typ.
Max.
3.6
3.6
0
Unit
V
3834 tbl 03
(1)
NOTE:
V
DD
Supply Voltage
3.3
1. StressesgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycause
permanentdamagetothedevice.Thisisastressratingonlyandfunctionaloperation
ofthedeviceattheseoranyotherconditionsabovethoseindicatedintheoperational
sections of this specification is not implied. Exposure to absolute maximum rating
conditionsforextendedperiodsmayaffectreliability.
(2)
DD
V
Supply Voltage
Ground
3.3
V
Vss
0
0
V
____
V
IH
Input High Voltage
Input Low Voltage
2.0
V
DD+0.3(3)
0.8
V
–0.3(4)
V
____
VIL
Capacitance
3834 tbl 05
(TA = +25°C, f = 1.0MHz, SOJ package)
NOTES:
1. For 71V016SA10 only.
2. For all speed grades except 71V016SA10.
3. VIH (max.) = VDD+2V for pulse width less than 5ns, once per cycle.
4. VIL (min.) = –2V for pulse width less than 5ns, once per cycle.
Symbol
Parameter(1)
Input Capacitance
I/O Capacitance
Conditions
IN = 3dV
OUT = 3dV
Max. Unit
CIN
V
6
7
pF
CI/O
V
pF
3834 tbl 06
NOTE:
1. Thisparameterisguaranteedbydevicecharacterization,butnotproductiontested.
DC Electrical Characteristics
(VDD = Min. to Max., Commercial and Industrial Temperature Ranges)
IDT71V016SA
Symbol
Parameter
Input Leakage Current
Test Condition
DD = Max., VIN = VSS to VDD
DD = Max., CS = VIH, VOUT = VSS to VDD
OL = 8mA, VDD = Min.
OH = –4mA, VDD = Min.
Min.
Max.
Unit
µA
µA
V
___
___
___
|ILI|
V
5
5
|ILO
|
Output Leakage Current
Output Low Voltage
Output High Voltage
V
VOL
I
0.4
___
VOH
I
2.4
V
3834 tbl 07
DC Electrical Characteristics(1,2)
(VDD = Min. to Max., VLC = 0.2V, VHC = VDD – 0.2V)
71V016SA10
Com'l Only
160
71V016SA12
71V016SA15
71V016SA20
Com'l
Ind
Com'l
Ind
Com'l
Ind
Symbol
Parameter
Dynamic Operating Current
Unit
Max.
150
160
130
130
--
120
120
mA
ICC
Typ.(4)
(3)
CS ≤ VLC, Outputs Open, VDD = Max., f = fMAX
65
60
--
55
50
--
(5)
Dynamic Standby Power Supply Current
mA
I
SB
45
10
40
10
45
10
35
10
35
10
30
10
30
10
(3)
CS ≥ VHC, Outputs Open, VDD = Max., f = fMAX
Full Standby Power Supply Current (static)
CS ≥ VHC, Outputs Open, VDD = Max., f = 0(3)
mA
ISB1
NOTES:
3834 tbl 08
1. Allvaluesaremaximumguaranteedvalues.
2. All inputs switch between 0.2V (Low) and VDD – 0.2V (High).
3. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing .
4. Typical values are based on characterization data for H step only measured at 3.3V, 25°C and with equal read and write cycles.
6.42
3
IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
Commercial and Industrial Temperature Ranges
AC Test Conditions
Input Pulse Levels
GND to 3.0V
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
AC Test Load
1.5ns
1.5V
1.5V
See Figure 1, 2 and 3
3834 tbl 09
AC Test Loads
3.3V
+1.5V
320Ω
50Ω
OUT
DATA
Z0 = 50Ω
I/O
5pF*
350Ω
30pF
3834 drw 03
3834 drw 04
*Including jig and scope capacitance.
Figure 1. AC Test Load
Figure 2. AC Test Load
(for tCLZ, tOLZ, tCHZ, tOHZ, tOW, and tWHZ)
7
6
•
∆tAA,
t
ACS
5
4
3
2
1
(Typical, ns)
•
•
•
•
•
•
180
8 20 40 60 80 100 120 140 160
CAPACITANCE (pF)
200
3834 drw 05
Figure 3. Output Capacitive Derating
6.442
IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
Commercial and Industrial Temperature Ranges
AC Electrical Characteristics (VDD = Min. to Max., Commercial and Industrial Temperature Ranges)
71V016SA10(2)
71V016SA12
71V016SA15
71V016SA20
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
READ CYCLE
____
____
____
____
t
RC
AA
ACS
Read Cycle Time
10
12
15
20
ns
ns
ns
ns
____
____
____
____
t
Address Access Time
10
12
15
20
____
____
____
____
t
Chip Select Access Time
Chip Select Low to Output in Low-Z
10
12
15
20
____
____
____
____
(1)
CLZ
4
4
5
5
t
____
____
____
____
(1)
Chip Select High to Output in High-Z
Output Enable Low to Output Valid
Output Enable Low to Output in Low-Z
5
6
6
8
ns
ns
ns
t
CHZ
____
____
____
____
tOE
5
6
7
8
(1)
(1)
____
____
____
____
0
0
0
0
t
OLZ
____
____
____
____
Output Enable High to Output in High-Z
Output Hold from Address Change
Byte Enable Low to Output Valid
Byte Enable Low to Output in Low-Z
5
6
6
8
ns
ns
ns
ns
t
OHZ
OH
BE
t
4
—
4
—
4
—
4
—
____
t
—
5
—
6
—
7
8
____
____
____
____
(1)
0
0
0
0
t
BLZ
____
____
____
____
(1)
Byte Enable High to Output in High-Z
5
6
6
8
ns
t
BHZ
WRITE CYCLE
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
t
WC
AW
CW
BW
AS
WR
WP
DW
DH
Write Cycle Time
10
7
7
7
0
0
7
5
0
12
8
8
8
0
0
8
6
0
15
10
10
10
0
20
12
12
12
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
Address Valid to End of Write
Chip Select Low to End of Write
Byte Enable Low to End of Write
Address Set-up Time
t
t
t
t
Address Hold from End of Write
Write Pulse Width
0
0
t
10
7
12
9
t
Data Valid to End of Write
Data Hold Time
t
0
0
____
____
____
____
(1)
OW
Write Enable High to Output in Low-Z
3
3
3
3
t
(1)
WHZ
____
____
____
____
Write Enable Low to Output in High-Z
5
6
6
8
ns
t
NOTES:
3834 tbl 10
1. This parameter is guaranteed with the AC Load (Figure 2) by device characterization, but is not production tested.
2. 0° C to +70°C temperature range only.
Timing Waveform of Read Cycle No. 1(1,2,3)
t
RC
ADDRESS
t
AA
t
OH
tOH
DATAOUT VALID
DATAOUT
PREVIOUS DATAOUT VALID
NOTES:
1. WE is HIGH for Read Cycle.
3834 drw 06
2. Deviceiscontinuouslyselected,CSisLOW.
3. OE, BHE, and BLE are LOW.
6.42
5
IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
Commercial and Industrial Temperature Ranges
Timing Waveform of Read Cycle No. 2(1)
tRC
ADDRESS
OE
tAA
t
OH
(3)
tOHZ
tOE
(3)
tOLZ
CS
(2)
t
ACS
(3)
(3)
(3)
t
CHZ
t
CLZ
BLE
BHE,
(2)
t
BE
(3)
t
BHZ
t
BLZ
DATAOUT
DATA OUTVALID
3834 drw 07
NOTES:
1. WE is HIGH for Read Cycle.
2. AddressmustbevalidpriortoorcoincidentwiththelaterofCS,BHE,or BLE transitionLOW;otherwisetAA isthelimitingparameter.
3. Transitionismeasured±200mVfromsteadystate.
Timing Waveform of Write Cycle No. 1 (WE Controlled Timing)(1,2,4)
tWC
ADDRESS
t
AW
CS
(2)
(5)
(5)
t
CW
t
CHZ
tBW
BHE BLE
,
tWR
t
BHZ
t
WP
WE
tAS
(5)
t
WHZ
(5)
t
OW
(3)
DATAOUT
DATAIN
PREVIOUS DATA VALID
DATA VALID
tDH
t
DW
DATAIN VALID
3834 drw 08
NOTES:
1. A write occurs during the overlap of a LOW CS, LOW BHE or BLE, and a LOW WE.
2. OEis continuouslyHIGH. Ifduringa WEcontrolledwrite cycle OEis LOW, tWP mustbe greaterthanorequaltotWHZ+tDW toallowthe I/Odrivers toturnoffanddata tobe placed
onthe bus forthe requiredtDW. IfOEis HIGHduringaWE controlledwrite cycle, this requirementdoes notapplyandthe minimumwrite pulse is as shortas the specifiedtWP.
3. Duringthis period,I/Opins areintheoutputstate,andinputsignals mustnotbeapplied.
4. Ifthe CSLOWorBHEandBLELOWtransitionoccurssimultaneouslywithoraftertheWELOWtransition,theoutputsremaininahigh-impedancestate.
5. Transitionismeasured±200mVfromsteadystate.
6.462
IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
Commercial and Industrial Temperature Ranges
Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)(1,4)
t
WC
ADDRESS
t
AW
CS
(2)
t
AS
tCW
t
BW
BHE, BLE
tWP
tWR
WE
DATAOUT
DATAIN
t
DH
t
DW
DATAIN VALID
3834 drw 09
Timing Waveform of Write Cycle No. 3 (BHE, BLE Controlled Timing)(1,4)
t
WC
ADDRESS
tAW
CS
(2)
t
CW
tAS
tBW
BHE, BLE
t
WP
tWR
WE
DATAOUT
DATAIN
tDH
t
DW
DATAIN VALID
3834 drw 10
NOTES:
1. A write occurs during the overlap of a LOW CS, LOW BHE or BLE, and a LOW WE.
2. OEis continuouslyHIGH. Ifduringa WEcontrolledwrite cycle OEis LOW, tWP mustbe greaterthanorequaltotWHZ+tDW toallowthe I/Odrivers toturnoffanddata tobe placed
onthe bus forthe requiredtDW. IfOEis HIGHduringaWE controlledwrite cycle, this requirementdoes notapplyandthe minimumwrite pulse is as shortas the specifiedtWP.
3. Duringthis period,I/Opins areintheoutputstate,andinputsignals mustnotbeapplied.
4. Ifthe CSLOWorBHEandBLELOWtransitionoccurssimultaneouslywithoraftertheWELOWtransition,theoutputsremaininahigh-impedancestate.
5. Transitionismeasured±200mVfromsteadystate.
6.42
7
IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
Commercial and Industrial Temperature Ranges
Ordering Information
X
71V016
H
SA
XX
XXX
X
X
Process/
Temperature
Range
Tape & Reel
Device
Type
Power Speed Package
8
Blank
I
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
Restricted hazardous
substance device
G
Y
400-mil SOJ (SO44-1)
PH
BF
400-mil TSOP Type II (SO44-2)
7.0 x 7.0 mm FBGA (BF48-1)
10**
12
15
Speed in nanoseconds
20
First generation or current stepping
Current generation die step optional
Blank
H
** Commercial temperature range only.
3834 drw 11
6.482
IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-bit)
Commercial and Industrial Temperature Ranges
Datasheet Document History
1/7/00
Updatedtonewformat
Pp. 1, 3, 5, 8
Pg. 2
Pg. 6
Pg. 7
Pg. 9
Pg. 3
Pg. 5
Pg. 8
Pg. 8
Pg. 8
Pg. 8
Pg.8
AddedIndustrialTemperaturerangeofferings
Numbered I/Os and address pins on FBGA Top View
RevisedfootnotesonWriteCycleNo. 1diagram
Revised footnotes on Write Cycle No. 2 and No. 3 diagrams
AddedDatasheetDocumentHistory
08/30/00
Tighten ICC and ISB.
Tighten tCLZ, tCHZ, tOHZ, tBHZ and tWHZ
08/22/01
06/20/02
01/30/04
09/27/06
02/14/07
06/26/07
10/13/08
Removed footnote "available in 15ns and 20ns only"
Addedtapeandreelfieldtoorderinginformation
Added"Restrictedhazardoussubstancedevice"toorderinginformation.
Correctedorderinginformation,changedpositionofIandG.
AddedHstepgenerationtodatasheetorderinginformation.
ChangedtypicalparametersforICC,DCelectricalcharacteristicstable.
Removed"IDT"fromorderablepartnumber
Pg.3
Pg.8
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The IDT logo is a registered trademark of Integrated Device Technology, Inc.
9
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