810252AGILF [IDT]

VCXO and Synchronous Ethernet Jit ter At tenuator;
810252AGILF
型号: 810252AGILF
厂家: INTEGRATED DEVICE TECHNOLOGY    INTEGRATED DEVICE TECHNOLOGY
描述:

VCXO and Synchronous Ethernet Jit ter At tenuator

时钟 光电二极管 外围集成电路 石英晶振 压控振荡器 晶体
文件: 总16页 (文件大小:257K)
中文:  中文翻译
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VCXO and Synchronous Ethernet  
Jitter Attenuator  
810252I  
Data Sheet  
General Description  
Features  
The 810252I is a high performance, low jitter/low phase noise  
VCXO. The 810252I uses a low frequency and low cost pullable  
crystal to achieve jitter attenuation for synchronous Ethernet  
applications. The 810252I can take an input of 25MHz and produce  
two LVCMOS outputs of 25MHz.  
Two single-ended outputs (LVCMOS or LVTTL levels),  
output Impedance: 15  
Phase jitter attenuation by the VCXO-PLL using a 25MHz pullable  
external crystal (XTAL)  
Input frequencies: 25MHz or 125MHz  
Output frequency: 25MHz  
The device is packaged in a small 16 lead TSSOP package and is  
ideal for use on space constrained boards typically encountered in  
most synchronous ethernet applications.  
PLL loop bandwidth adjustable by external components  
Full 3.3V or 2.5V supply voltage  
-40°C to 85°C ambient operating temperature  
Available in lead-free (RoHS 6) package  
Applications  
Synchronous Ethernet v0.39a  
End equipment compliant with Std IEEE 802.039a  
Pin Assignment  
Block Diagram  
CLK_IN  
VDD  
PLL_SEL  
GND  
Q0  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
(External Loop Filter Inputs)  
LF1  
LF1  
LF0  
PLL_SEL  
OE  
Q1  
VDDO  
OE  
LF0  
GND  
25MHz  
XTAL_IN  
VDDA  
VDD  
10 XTAL_OUT  
GND  
(25MHz or 125MHz  
Input Frequency Auto Detect)  
9
Q0  
810252I  
Pre-  
Divider  
Pulldown  
CLK_IN  
PFD  
CP  
1
0
VCXO  
25MHz  
Q1  
16-Lead TSSOP  
4.4mm x 5.0mm x 0.925mm  
package body  
(÷1 or ÷5)  
VCXO-PLL  
G Package  
Top View  
©2016 Integrated Device Technology, Inc  
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Revision B March 3, 2016  
810252I Data Sheet  
Table 1. Pin Descriptions  
Number  
Name  
Type  
Description  
When logic HIGH, the VCXO-PLL is enabled. When LOW, the VCXO-PLL is in  
bypass mode. LVCMOS/LVTTL interface levels.  
1
PLL_SEL  
Input  
Pullup  
Pullup  
2, 9, 12  
GND  
Q0, Q1  
VDDO  
OE  
Power  
Output  
Power  
Input  
Power supply ground.  
3, 4  
5
Single-ended clock outputs. LVCMOS/ LVTTL interface levels.  
Output power supply pin.  
6
Output enable pin for Qx outputs. LVCMOS/LVTTL interface levels.  
Analog supply pin.  
7
VDDA  
VDD  
Power  
Power  
8, 15  
Core supply pins.  
10,  
11  
XTAL_OUT,  
XTAL_IN  
Input  
VCXO crystal oscillator interface. XTAL_IN is the input. XTAL_OUT is the output.  
Analog  
Input/  
Output  
13, 14  
16  
LF0, LF1  
CLK_IN  
Loop filter connection node pins.  
Input  
Pulldown  
Single-ended clock input. LVCMOS/LVTTL interface levels.  
NOTE: Pullup and Pulldown refer to internal input resistors. See Table 2, Pin Characteristics, for typical values.  
Table 2. Pin Characteristics  
Symbol  
Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
Units  
pF  
CIN  
Input Capacitance  
4
8
VDD, VDDO = 3.465V  
VDD, VDDO = 2.625V  
pF  
CPD  
Power Dissipation Capacitance  
5
pF  
RPULLUP  
Input Pullup Resistor  
51  
51  
15  
20  
k  
k  
RPULLDOWN Input Pulldown Resistor  
V
DDO = 3.3V 5%  
ROUT Output Impedance  
VDDO = 2.5V 5%  
©2016 Integrated Device Technology, Inc  
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Revision B March 3, 2016  
810252I Data Sheet  
Absolute Maximum Ratings  
NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.  
These ratings are stress specifications only. Functional operation of product at these conditions or any conditions beyond  
those listed in the DC Characteristics or AC Characteristics is not implied. Exposure to absolute maximum rating conditions for  
extended periods may affect product reliability.  
Item  
Rating  
Supply Voltage, VDD  
4.6V  
Inputs, VI  
XTAL_IN  
Other Inputs  
0V to VDD  
-0.5V to VDD + 0.5V  
Outputs, VO  
-0.5V to VDD + 0.5V  
81.2C/W (0 mps)  
-65C to 150C  
Package Thermal Impedance, JA  
Storage Temperature, TSTG  
DC Electrical Characteristics  
Table 3A. Power Supply DC Characteristics, VDD = VDDO = 3.3V 5%, TA = -40°C to 85°C  
Symbol  
VDD  
Parameter  
Test Conditions  
Minimum  
3.135  
Typical  
3.3  
Maximum  
Units  
V
Core Supply Voltage  
Analog Supply Voltage  
Output Supply Voltage  
Power Supply Current  
Analog Supply Current  
Output Supply Current  
3.465  
VDD  
3.465  
40  
VDDA  
VDDO  
IDD  
VDD – 0.07  
3.135  
3.3  
V
3.3  
V
mA  
mA  
mA  
IDDA  
7
IDDO  
No Load  
5
Table 3B. Power Supply DC Characteristics, VDD = VDDO = 2.5V 5%, TA = -40°C to 85°C  
Symbol  
VDD  
Parameter  
Test Conditions  
Minimum  
2.375  
Typical  
2.5  
Maximum  
Units  
V
Core Supply Voltage  
Analog Supply Voltage  
Output Supply Voltage  
Power Supply Current  
Analog Supply Current  
Output Supply Current  
2.625  
VDD  
2.625  
35  
VDDA  
VDDO  
IDD  
VDD – 0.07  
2.375  
2.5  
V
2.5  
V
mA  
mA  
mA  
IDDA  
7
IDDO  
No Load  
5
©2016 Integrated Device Technology, Inc  
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Revision B March 3, 2016  
810252I Data Sheet  
Table 3C. LVCMOS/LVTTL DC Characteristics, VDD = VDDO = 3.3V 5% or 2.5V 5%, TA = -40°C to 85°C  
Symbol Parameter  
Test Conditions  
VDD = 3.465V  
Minimum  
Typical  
Maximum  
Units  
V
2
VDD + 0.3  
Input  
VIH  
High Voltage  
VDD = 2.625V  
1.7  
-0.3  
-0.3  
VDD + 0.3  
V
VDD = 3.465V  
0.8  
0.7  
150  
5
V
Input  
VIL  
Low Voltage  
VDD = 2.625V  
V
CLK_IN  
VDD = VIN = 3.465V or 2.625V  
VDD = VIN = 3.465V or 2.625V  
VDD = 3.465V or 2.625V, VIN = 0V  
µA  
µA  
µA  
µA  
V
Input  
IIH  
High Current  
OE, PLL_SEL  
CLK_IN  
-5  
-150  
2.6  
Input  
IIL  
Low Current  
OE, PLL_SEL  
V
DD = 3.465V or 2.625V, VIN = 0V  
DDO = 3.3V 5%  
V
VOH  
Output High Voltage; NOTE 1  
Output Low Voltage; NOTE 1  
VDDO = 2.5V 5%  
VDDO = 3.3V 5%  
VDDO = 2.5V 5%  
1.8  
V
0.6  
0.5  
V
VOL  
V
NOTE 1: Outputs terminated with 50to VDDO/2. See Parameter Measurement Information section. Load Test Circuit diagrams.  
AC Electrical Characteristics  
Table 4A. AC Characteristics, VDD = VDDO = 3.3V 5%, TA = -40°C to 85°C  
Symbol  
Parameter  
Test Conditions  
Minimum  
Typical  
25  
Maximum  
Units  
MHz  
MHz  
MHz  
MHz  
ps  
fREF  
Input Reference Frequency  
125  
25  
fVCO  
VCXO-PLL Frequency  
Output Frequency  
fOUT  
25  
tJIT(CC)  
tsk(o)  
Cycle-to-Cycle Jitter; NOTE 1  
Output Skew; NOTE 2, 3  
25  
15  
ps  
RMS Phase Jitter (Random);  
NOTE 4  
f
OUT = 25MHz, Integration Range:  
12kHz – 5MHz  
tjit()  
0.25  
ps  
tJIT(PER)  
tR / tF  
odc  
Period Jitter, RMS  
2.7  
1100  
52  
ps  
ps  
%
%
Output Rise/Fall Time  
Output Duty Cycle; NOTE 5  
Output Duty Cycle; NOTE 6  
20% to 80%  
550  
48  
odc  
45  
55  
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when device is  
mounted in a test socket with maintained transverse airflow greater than 500 lfpm. Device will meet specifications after thermal equilibrium has  
been reached under these conditions.  
NOTE: Characterized using a 537Hz VCXO-PLL Loop Bandwidth. Refer to VCXO_PLL Applications Section.  
NOTE 1: This parameter is defined in accordance with JEDEC Standard 65.  
NOTE 2: Defined as skew between outputs at the same supply voltage and with equal load conditions. Measured at VDDO/2.  
NOTE 3: This parameter is defined in accordance with JEDEC Standard 65.  
NOTE 4: Refer to the Phase Noise Plot.  
NOTE 5: Specified with the VCXO-PLL free running high.  
NOTE 6: Specified with the VCXO-PLL locked.  
©2016 Integrated Device Technology, Inc  
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Revision B March 3, 2016  
810252I Data Sheet  
Table 4B. AC Characteristics, VDD = VDDO = 2.5V 5%, TA = -40°C to 85°C  
Symbol  
Parameter  
Test Conditions  
Minimum  
Typical  
25  
Maximum  
Units  
MHz  
MHz  
MHz  
MHz  
ps  
fREF  
Input Reference Frequency  
125  
25  
fVCO  
VCXO-PLL Frequency  
Output Frequency  
fOUT  
25  
tJIT(CC)  
tsk(o)  
Cycle-to-Cycle Jitter; NOTE 1  
Output Skew; NOTE 2, 3  
20  
25  
ps  
RMS Phase Jitter (Random);  
NOTE 4  
f
OUT = 25MHz, Integration Range:  
12kHz – 5MHz  
tjit  
0.26  
ps  
tJIT(PER)  
tR / tF  
odc  
Period Jitter, RMS  
5.7  
1850  
52  
ps  
ps  
%
%
Output Rise/Fall Time  
Output Duty Cycle; NOTE 5  
Output Duty Cycle; NOTE 6  
20% to 80%  
700  
48  
odc  
44  
56  
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when device is  
mounted in a test socket with maintained transverse airflow greater than 500 lfpm. Device will meet specifications after thermal equilibrium has  
been reached under these conditions.  
NOTE: Characterized using a 537Hz VCXO-PLL Loop Bandwidth. Refer to VCXO_PLL Applications Section.  
NOTE 1: This parameter is defined in accordance with JEDEC Standard 65.  
NOTE 2: Defined as skew between outputs at the same supply voltage and with equal load conditions. Measured at VDDO/2.  
NOTE 3: This parameter is defined in accordance with JEDEC Standard 65.  
NOTE 4: Refer to the Phase Noise Plot.  
NOTE 5: Specified with the VCXO-PLL free running high.  
NOTE 6: Specified with the VCXO-PLL locked.  
©2016 Integrated Device Technology, Inc  
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Revision B March 3, 2016  
810252I Data Sheet  
Typical Phase Noise (3.3V)  
Offset Frequency (Hz)  
©2016 Integrated Device Technology, Inc  
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Revision B March 3, 2016  
810252I Data Sheet  
Typical Phase Noise (2.5V)  
Offset Frequency (Hz)  
©2016 Integrated Device Technology, Inc  
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Revision B March 3, 2016  
810252I Data Sheet  
Parameter Measurement Information  
1.65V 5%  
1.65V 5%  
1.25V 5%  
1.25V 5%  
SCOPE  
V
SCOPE  
DD,  
V
DD,  
V
DDO  
V
DDO  
V
DDA  
V
Qx  
DDA  
Qx  
GND  
GND  
-1.65V 5%  
-1.25V 5%  
3.3V Core/3.3V LVCMOS Output Load AC Test Circuit  
2.5V Core/2.5V LVCMOS Output Load AC Test Circuit  
VDDO  
2
VDDO  
2
VDDO  
2
Q0, Q1  
tcycle n  
tcycle n+1  
tjit(cc) = tcycle n – tcycle n+1  
|
|
1000 Cycles  
Cycle-to-Cycle Jitter  
RMS Phase Jitter  
VOH  
VDDO  
VREF  
Qx  
Qy  
2
VOL  
1σ contains 68.26% of all measurements  
2σ contains 95.4% of all measurements  
3σ contains 99.73% of all measurements  
4σ contains 99.99366% of all measurements  
6σ contains (100-1.973x10-7)% of all measurements  
VDDO  
2
tsk(o)  
Histogram  
Reference Point  
(Trigger Edge)  
Mean Period  
(First edge after trigger)  
Period Jitter  
Output Skew  
©2016 Integrated Device Technology, Inc  
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Revision B March 3, 2016  
810252I Data Sheet  
Parameter Measurement Information, continued  
VDDO  
2
Q0, Q1  
80%  
80%  
tPW  
tPERIOD  
20%  
20%  
Q0, Q1  
tR  
tF  
tPW  
x 100%  
odc =  
tPERIOD  
Output Duty Cycle/Pulse Width/Period  
Output Rise/Fall Time  
Application Information  
Recommendations for Unused Input Pins  
Inputs:  
Outputs:  
LVCMOS Control Pins  
LVCMOS Outputs  
All control pins have internal pullups; additional resistance is not  
required but can be added for additional protection. A 1kresistor  
can be used.  
All unused LVCMOS outputs can be left floating. There should be no  
trace attached.  
©2016 Integrated Device Technology, Inc  
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Revision B March 3, 2016  
810252I Data Sheet  
Schematic Example  
Figure 1 shows an example of 810252I application schematic. In this  
example, the device is operated at VDD = 3.3V. The decoupling  
capacitors should be as close as possible to the power pin. The  
input is driven by an LVCMOS driver. An optional 3-pole filter can  
also be used for additional spur reduction. It is recommended that  
the loop filter components be laid out for the 3-pole option. This will  
also allow the 2-pole filter to be used.  
3-pole loop filter example - (optional)  
R3  
LF0  
LF1  
Rs  
TBD  
VDD  
TBD  
VDDO  
Cp  
C3  
C1  
Cs  
TBD  
TBD  
0.1u  
TBD  
C2  
0.1u  
VDD  
VDD  
R2  
10  
9
10  
11  
12  
13  
14  
15  
16  
8
GND  
VDD  
VDDA  
OE  
VDDO  
Q1  
Q0  
GND  
PLL_SEL  
XTAL_OU T  
XTAL_IN  
VDDA  
7
6
5
4
3
2
1
XTAL_OUT  
XTAL_IN  
GND  
LF0  
LF1  
OE  
Q1  
C5  
SPARE  
X2  
C30  
0.01u  
C45  
10u  
Q0  
VDD  
CLK_IN  
Rs  
1K  
PLL_SEL  
C6  
Cp  
SPARE  
Cs  
0.001 uF  
Zo = 50  
10uF  
C4  
0.1u  
U1  
R4  
33  
LVCMOS_Receiv er  
Logic Control Input Examples  
2-pole loop filter  
Set Logic  
Input to  
'1'  
Set Logic  
Input to  
'0'  
VDD  
VDD  
VDD=VDDO=3.3V  
Q1  
R1  
33  
Zo = 50  
RU1  
1K  
RU2  
Not Install  
Zo = 50  
LVCMOS_Driver  
R5  
33  
To Logic  
Input  
To Logic  
Input  
pins  
pins  
LVCMOS_Receiv er  
RD1  
Not Install  
RD2  
1K  
Figure 1. 810252I Schematic Example  
©2016 Integrated Device Technology, Inc  
10  
Revision B March 3, 2016  
810252I Data Sheet  
VCXO-PLL EXTERNAL COMPONENTS  
Choosing the correct external components and having a proper  
printed circuit board (PCB) layout is a key task for quality operation  
of the VCXO-PLL. In choosing a crystal, special precaution must be  
taken with the package and load capacitance (CL). In addition,  
frequency, accuracy and temperature range must also be  
The frequency of oscillation in the third overtone mode is not  
necessarily at exactly three times the fundamental frequency. The  
mechanical properties of the quartz element dictate the position of  
the overtones relative to the fundamental. The oscillator circuit may  
excite both the fundamental and overtone modes simultaneously.  
This will cause a nonlinearity in the tuning curve. This potential  
problem is why VCXO crystals are required to be tested for absence  
of any activity inside a 200 ppm window at three times the  
fundamental frequency. Refer to FL_3OVT and FL_3OVT_spurs in the  
crystal Characteristics table.  
considered. Since the pulling range of a crystal also varies with the  
package, it is recommended that a metal-canned package like HC49  
be used. Generally, a metal-canned package has a larger pulling  
range than a surface mounted device (SMD). For crystal selection  
information, refer to the VCXO Crystal Selection Application Note.  
The crystal’s load capacitance CL characteristic determines its  
resonating frequency and is closely related to the VCXO tuning  
range. The total external capacitance seen by the crystal when  
installed on a board is the sum of the stray board capacitance, IC  
package lead capacitance, internal varactor capacitance and any  
installed tuning capacitors (CTUNE).  
The crystal and external loop filter  
LF0  
LF1  
components should be kept as  
close as possible to the device.  
Loop filter and crystal traces  
should be kept short and  
RS  
CS  
CP  
separated from each other. Other  
signal traces should be kept  
separate and not run underneath  
the device, loop filter or crystal  
components.  
If the crystal CL is greater than the total external capacitance, the  
VCXO will oscillate at a higher frequency than the crystal  
XTAL_IN  
CTUNE  
specification. If the crystal CL is lower than the total external  
capacitance, the VCXO will oscillate at a lower frequency than the  
crystal specification. In either case, the absolute tuning range is  
reduced. The correct value of CL is dependant on the characteristics  
of the VCXO. The recommended CL in the Crystal Parameter Table  
balances the tuning range by centering the tuning curve.  
25MHz  
XTAL_OUT  
CTUNE  
VCXO Characteristics Table  
VCXO-PLL Loop Bandwidth Selection Table  
Symbol  
kVCXO  
Parameter  
Typical  
15000  
9.8  
Units  
Hz/V  
pF  
Bandwidth  
Crystal  
Frequency  
(MHz)  
RS (k)  
CS (µF)  
CP (µF)  
VCXO Gain  
CV_LOW  
CV_HIGH  
Low Varactor Capacitance  
High Varactor Capacitance  
215Hz (Low)  
537Hz (Mid)  
886Hz (High)  
25  
25  
25  
0.4  
1.0  
10  
10  
10  
0.01  
0.001  
0.001  
22.7  
pF  
1.65  
Crystal Characteristics  
Symbol  
Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
Units  
Mode of Oscillation  
Frequency  
Fundamental  
25  
fN  
fT  
fS  
MHz  
ppm  
ppm  
0C  
Frequency Tolerance  
Frequency Stability  
20  
20  
Operating Temperature Range  
Load Capacitance  
Shunt Capacitance  
Pullability Ratio  
-40  
+85  
CL  
10  
4
pF  
CO  
pF  
CO / C1  
FL_3OVT  
220  
240  
3rd Overtone FL  
200  
200  
ppm  
ppm  
FL_3OVT_spurs 3rd Overtone FL Spurs  
ESR Equivalent Series Resistance  
20  
1
Drive Level  
mW  
ppm  
ppm  
First Year  
Ten Years  
3
Aging @ 25 0C  
10  
©2016 Integrated Device Technology, Inc  
11  
Revision B March 3, 2016  
810252I Data Sheet  
Power Considerations  
This section provides information on power dissipation and junction temperature for the 810252I.  
Equations and example calculations are also provided.  
1. Power Dissipation.  
The total power dissipation for the 810252I is the sum of the core power plus the analog power plus the power dissipated in the load(s). The  
following is the power dissipation for VDD = 3.3V + 5% = 3.465V, which gives worst case results.  
Power (core)MAX = VDD_MAX * (IDD + IDDA + IDDO) = 3.465V *(40mA + 7mA + 5mA) = 180.18mW  
Output Impedance ROUT Power Dissipation due to Loading 50to VDD/2  
Output Current IOUT = VDD_MAX / [2 * (50+ ROUT)] = 3.465V / [2 * (50+ 15)] = 26.7mA  
Power Dissipation on the ROUT per LVCMOS output  
Power (ROUT) = ROUT * (IOUT)2 = 15* (26.7mA)2 = 10.7mW per output  
Total Power (ROUT) = 10.7mW * 2 = 21.4mW  
Dynamic Power Dissipation at 25MHz  
Power (25MHz) = CPD * Frequency * (VDD)2 = 8pF * 25MHz * (3.465V)2 = 2.4mW per output  
Total Power (25MHz) = 2.4mW * 2 = 4.8mW  
Total Power Dissipation  
Total Power  
= Power (core)MAX + Power (ROUT) + Power (25MHz)  
= 180.18mW + 21.4mW + 4.8mW  
= 206.38mW  
2. Junction Temperature.  
Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad directly affects the reliability of the device. The  
maximum recommended junction temperature is 125°C. Limiting the internal transistor junction temperature, Tj, to 125°C ensures that the bond  
wire and bond pad temperature remains below 125°C.  
The equation for Tj is as follows: Tj = JA * Pd_total + TA  
Tj = Junction Temperature  
JA = Junction-to-Ambient Thermal Resistance  
Pd_total = Total Device Power Dissipation (example calculation is in section 1 above)  
TA = Ambient Temperature  
In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance JA must be used. Assuming no air flow and  
a multi-layer board, the appropriate value is 81.2°C/W per Table 5 below.  
Therefore, Tj for an ambient temperature of 85°C with all outputs switching is:  
85°C + 0.296W *81.2°C/W = 101.7°C. This is well below the limit of 125°C.  
This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow and the type of  
board (multi-layer).  
Table 5. Thermal Resistance JA for 16 Lead TSSOP, Forced Convection  
JA by Velocity  
Meters per Second  
0
1
2.5  
Multi-Layer PCB, JEDEC Standard Test Boards  
81.2°C/W  
73.9°C/W  
70.2°C/W  
©2016 Integrated Device Technology, Inc  
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Revision B March 3, 2016  
810252I Data Sheet  
Reliability Information  
Table 6. JA vs. Air Flow Table for a 16 Lead TSSOP  
JA vs. Air Flow  
Meters per Second  
0
1
2.5  
Multi-Layer PCB, JEDEC Standard Test Boards  
81.2°C/W  
73.9°C/W  
70.2°C/W  
Transistor Count  
The transistor count for 810252I: 1025  
Package Outline and Package Dimensions  
Package Outline - G Suffix for 16 Lead TSSOP  
Table 7. Package Dimensions for 16 Lead TSSOP  
All Dimensions in Millimeters  
Symbol  
Minimum  
Maximum  
N
A
16  
1.20  
0.15  
1.05  
0.30  
0.20  
5.10  
A1  
A2  
b
0.5  
0.80  
0.19  
0.09  
4.90  
c
D
E
6.40 Basic  
E1  
e
4.30  
4.50  
0.65 Basic  
L
0.45  
0°  
0.75  
8°  
aaa  
0.10  
Reference Document: JEDEC Publication 95, MO-153  
©2016 Integrated Device Technology, Inc  
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Revision B March 3, 2016  
810252I Data Sheet  
Ordering Information  
Table 8. Ordering Information  
Part/Order Number  
810252AGILF  
Marking  
Package  
Shipping Packaging  
Tube  
Temperature  
-40C to 85C  
-40C to 85C  
10252AIL  
10252AIL  
16 Lead “Lead-Free” TSSOP  
16 Lead “Lead-Free” TSSOP  
810252AGILFT  
Tape & Reel  
©2016 Integrated Device Technology, Inc  
14  
Revision B March 3, 2016  
810252I Data Sheet  
Revision History Sheet  
Rev  
Table  
Page  
Description of Change  
Date  
T4A  
4
3.3V AC Characteristics Table - Added additional odc row with specs of 45min and 55max.  
Added Notes 5 & 6.  
B
7/17/2012  
T4B  
5
1
2.5V AC Characteristics Table - Added additional odc row with specs of 44min and 56max.  
Added Notes 5 & 6.  
Features List: deleted ‘Absolute pull range is 80 ppm’  
B
B
8/1/12  
HiPerClock references have been deleted throughout the datasheet  
T4A  
T4B  
T8  
4
5
Added ‘high’ to Note 5.  
Added ‘high’ to Note 5.  
10/5/12  
14  
Deleted quantity from Tape and Reel.  
Removed ICS from part numbers where needed.  
Revision history - Corrected spelling errors in section one of this table.  
Updated header and footer.  
B
15  
3/3/16  
©2016 Integrated Device Technology, Inc  
15  
Revision B March 3, 2016  
810252I Data Sheet  
Corporate Headquarters  
6024 Silver Creek Valley Road  
San Jose, CA 95138 USA  
www.IDT.com  
Sales  
Tech Support  
www.idt.com/go/support  
1-800-345-7015 or 408-284-8200  
Fax: 408-284-2775  
www.IDT.com/go/sales  
DISCLAIMER Integrated Device Technology, Inc. (IDT) reserves the right to modify the products and/or specifications described herein at any time, without notice, at IDT's sole discretion. Performance specifications  
and operating parameters of the described products are determined in an independent state and are not guaranteed to perform the same way when installed in customer products. The information contained herein  
is provided without representation or warranty of any kind, whether express or implied, including, but not limited to, the suitability of IDT's products for any particular purpose, an implied warranty of merchantability,  
or non-infringement of the intellectual property rights of others. This document is presented only as a guide and does not convey any license under intellectual property rights of IDT or any third parties.  
IDT's products are not intended for use in applications involving extreme environmental conditions or in life support systems or similar devices where the failure or malfunction of an IDT product can be reasonably  
expected to significantly affect the health or safety of users. Anyone using an IDT product in such a manner does so at their own risk, absent an express, written agreement by IDT.  
Integrated Device Technology, IDT and the IDT logo are trademarks or registered trademarks of IDT and its subsidiaries in the United States and other countries. Other trademarks used herein are the property of  
IDT or their respective third party owners.  
For datasheet type definitions and a glossary of common terms, visit www.idt.com/go/glossary.  
Copyright ©2016 Integrated Device Technology, Inc. All rights reserved.  

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