IDT6168LA20DB [IDT]
CMOS STATIC RAM 16K (4K x 4-BIT); CMOS静态RAM 16K （ 4K ×4位）
| 型号： | IDT6168LA20DB |
| 厂家： | 
INTEGRATED DEVICE TECHNOLOGY |
| 描述： | CMOS STATIC RAM 16K (4K x 4-BIT) |
| 文件： | 总9页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMOS Static RAM
16K (4K x 4-Bit)
IDT6168SA
IDT6168LA
Features
◆
High-speed (equal access and cycle time)
CMOStechnology.Thisstate-of-the-arttechnology,combinedwithinno-
vativecircuitdesigntechniques,providesacost-effectiveapproachfor
high-speedmemoryapplications.
– Military:25/45ns(max.)
– Industrial:25ns (max.)
– Commercial:15/20/25ns (max.)
Low power consumption
Battery backup operation—2V data retention voltage
(IDT6168LA only)
Available in high-density 20-pin ceramic or plastic DIP and
20-pin leadless chip carrier (LCC)
Produced with advanced CMOS high-performance
technology
CMOS process virtually eliminates alpha particle
soft-error rates
Bidirectional data input and output
Military product compliant to MIL-STD-883, Class B
Access times as fast 15ns are available. The circuit also offers a
reduced power standby mode. When CS goes HIGH, the circuit will
automaticallygoto,andremainin,astandbymodeaslongasCSremains
HIGH.Thiscapabilityprovidessignificantsystem-levelpowerandcooling
savings. The low-power(LA)versionalsooffers a batterybackupdata
retention capability where the circuit typically consumes only 1µW
operating off a 2V battery. All inputs and outputs of the IDT6168 are
TTL-compatibleandoperatefromasingle5Vsupply.
The IDT6168 is packaged in either a space saving 20-pin, 300-mil
ceramic or plastic DIP or a 20-pin LCC providing high board-level
packingdensities.
Military grade product is manufactured in compliance with the
latest revision of MIL-STD-883, Class B, making it ideally suited to
military temperature applications demanding the highest level of
performanceandreliability.
◆
◆
◆
◆
◆
◆
◆
Description
The IDT6168 is a 16,384-bit high-speed static RAM organized
as 4K x4. Itis fabricatedusinglDT’s high-performance, high-reliability
FunctionalBlockDiagram
A0
VCC
GND
ADDRESS
DECODER
16,384-BIT
MEMORY ARRAY
A11
I/O0
I/O CONTROL
I/O1
INPUT
DATA
CONTROL
I/O2
I/O3
,
CS
3090 drw 01
WE
FEBRUARY 2001
1
©2000IntegratedDeviceTechnology,Inc.
DSC-3090/05
IDT6168SA/LA
CMOS Static RAM 16K (4K x 4-Bit)
Military, Industrial, and Commercial Temperature Ranges
PinConfigurations
Truth Table(1)
CS
WE
X
Mode
Output
High-Z
DOUT
DIN
Power
Standby
Active
Standby
H
L
L
VCC
A11
A10
A9
A0
A1
A2
1
20
Read
Write
H
2
3
19
18
L
Active
P20-1
D20-1
L20-1
3
A
3090 tbl 03
4
5
17
16
NOTE:
1. H = VIH, L = VIL, X = Don't Care
A4
A5
8
A
6
15
14
13
12
11
I/O3
I/O2
I/O1
I/O0
WE
A6
7
AbsoluteMaximumRatings(1)
Symbol
A7
8
Rating
Com'l.
Mil.
Unit
CS
9
VTERM
Terminal Voltage
with Respect
to GND
-0.5 to +7.0
-0.5 to +7.0
V
GND
10
,
3090 drw 02
Operating
0 to +70
-55 to +125
-65 to +135
oC
oC
TA
DIP/LCC
Top View
Temperature
Temperature
Under Bias
-55 to +125
TBIAS
TSTG
PT
Storage Temperature -55 to +125
-65 to +150
oC
W
Power Dissipation
DC Output Current
1.0
50
1.0
50
PinDescriptions
IOUT
mA
3090 tbl 04
Name
A0 - A11
CS
Description
Address Inputs
Chip Select
Write Enable
Data Input/Output
Power
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
WE
I/O0 - I/O3
VCC
RecommendedDCOperating
Conditions
GND
Ground
3090 tbl 01
Symbol
Parameter
Min.
Typ.
Max. Unit
VCC
Supply Voltage
4.5
5.0
5.5
0
V
V
V
GND Ground
0
0
____
VIH
VIL
Input High Voltage
Input Low Voltage
2.2
6.0
0.8
Capacitance (TA = +25°C, f = 1.0MHz)
-0.5(1 )
V
____
Symbol
Parameter(1 )
Input Capacitance
I/O Capacitance
Conditions
Max.
Unit
3090 tbl 05
CIN
VIN = 0V
7
pF
NOTE:
1. VIL (min.) = –3.0V for pulse width less than 20ns, once per cycle.
CI/O
VOUT = 0V
7
pF
3090 tbl 02
NOTE:
1. This parameter is determined by device characterization, but is not production
tested.
RecommendedOperating
TemperatureandSupplyVoltage
Grade
Temperature
-55OC to +125OC
-45OC to +85OC
0OC to +70OC
GND
Vcc
Military
0V
5V± 10%
5V± 10%
5V± 10%
Industrial
0V
Commercial
0V
3090 tbl 06
2
IDT6168SA/LA
CMOS Static RAM 16K (4K x 4-Bit)
Military, Industrial, and Commercial Temperature Ranges
DC Electrical Characteristics(1)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)
6168SA15
6168SA20
6168LA20
6168SA25
6168LA25
6168SA45
6168LA45
Com'l.
Mil.
Com'l.
Mil.
Com'l.
& Ind.
Mil.
Com'l.
Mil.
Power
Symbol
Parameter
Unit
____
____
____
____
____
____
____
____
____
____
____
____
I
Operating Power Supply Current
SA
LA
SA
LA
110
90
70
90
100
80
100
80
mA
CC1
CS < VIL, Outputs Open
(2 )
____
70
VCC = Max., f = 0
I
Dynamic Operating Current
mA
mA
CC2
145
120
100
110
90
120
100
110
80
CS < VIL, Outputs Open
(2 )
____
VCC = Max., f = fMAX
____
____
____
____
____
____
____
____
____
____
____
____
I
Standby Power Supply Current
(TTL Level)
SB
SA
LA
SA
LA
55
45
30
35
25
3
45
30
10
0.3
35
25
10
0.3
CS > VIH, Outputs Open
____
(2 )
VCC = Max., f = fMAX
I
Full Standby Power Supply
Current (CMOS Level)
mA
SB1
20
20
CS > VHC, VCC = Max.,
____
VIN < VLC or VIN > VHC, f = 0(2 )
0.5
0.5
3090 tbl 07
NOTES:
1. All values are maximum guaranteed values.
2. fMAX = 1/tRC, only address inputs are cycling at fMAX. f = 0 means no address inputs are changing.
DC Electrical Characteristics
VCC = 5.0V ± 10%
IDT6168SA
IDT6168LA
Symbol
Parameter
Test Conditions
Min.
Max.
Min.
Max.
Unit
____
____
____
____
Input Leakage Current
|ILI|
VCC = Max.,
VIN = GND to VCC
MIL.
COM'L.
10
2
5
2
µA
____
____
____
____
|ILO|
Output Leakage Current
Output LOW Voltage
VCC = Max., CS = VIH,
MIL.
COM'L.
10
2
5
2
VOUT = GND to VCC
µA
V
____
____
____
____
IOL = 10mA, VCC = Min.
IOL = 8mA, VCC = Min.
IOH = -4mA, VCC = Min.
0.5
0.5
VOL
0.4
0.4
____
____
VOH
Output HIGH Voltage
2.4
2.4
V
3090 tbl 09
6.42
3
IDT6168SA/LA
CMOS Static RAM 16K (4K x 4-Bit)
Military, Industrial, and Commercial Temperature Ranges
Data Retention Characteristics (LA Version Only)
VLC = 0.2V, VHC = VCC 0.2V
IDT6168LA
Symbol
VDR
ICCDR
Parameter
VCC for Data Retention
Test Condition
Min.
Typ.(1 )
Max.
Unit
V
____
____
2.0
____
____
Data Retention Current
MIL.
0.5(2 )
1.0(3 )
100(2 )
150(3 )
µA
CS > VHC
VIN > VHC
or < VLC
(2 )
____
____
COM'L.
0.5(2 )
1.0(3 )
20
µA
(3 )
30
(5)
____
____
____
tCDR
Chip Deselect to Data
Retention Time
0
ns
(5 )
(4 )
____
tR
Operation Recovery Time
tRC
ns
3090 tbl 10
NOTES:
1. TA = +25°C.
2. at VCC = 2V
3. at VCC = 3V
4. tRC = Read Cycle Time.
5. This parameter is guaranteed by device characterization, but is not production tested.
Low VCC Data Retention Waveform
DATA
RETENTION
MODE
VCC
4.5V
4.5V
VDR ≥ 2V
tCDR
tR
,
VIH
VIH
CS
VDR
3090 drw 03
AC Test Conditions
Input Pulse Levels
GND to 3.0V
Input Rise/Fall Times
5ns
1.5V
Input Timing Reference Levels
Output Reference Levels
AC Test Load
1.5V
See Figures 1 and 2
3090 tbl 11
5V
5V
480Ω
480Ω
OUT
DATA
OUT
DATA
255Ω
30pF*
255Ω
5pF*
3090 drw 04
3090 drw 05
Figure 1. AC Test Load
Figure 2. AC Test Load
(for tCHZ, tCLZ, tWHZ and tOW)
*Includes scope and jig capacitances
4
IDT6168SA/LA
CMOS Static RAM 16K (4K x 4-Bit)
Military, Industrial, and Commercial Temperature Ranges
AC Electrical Characteristics (VCC = 5.0V ± 10%, All Temperature Ranges)
6168SA15(1 )
6168SA20(1 )
6168SA25
6168LA25
6168SA45(2 )
6168LA20(1 )
6168LA45(2 )
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Symbol
Parameter
Unit
Read Cycle
____
____
____
____
tRC
tAA
Read Cycle Time
Address Access Time
15
20
25
45
ns
ns
ns
ns
____
____
____
____
15
20
25
45
____
____
____
____
tACS
Chip Select Access Time
15
20
25
45
____
____
____
____
(3)
Chip Select to Output in Low-Z
Chip Deselect to Output in High-Z
Output Hold from Address Change
Chip Select to Power Up Time
Chip Deselect to Power Down Time
3
5
5
5
tCL Z
____
____
____
____
(3)
8
10
10
25
ns
ns
ns
tCHZ
____
____
____
____
tOH
3
3
3
3
____
____
____
____
(3)
0
0
0
0
tPU
____
____
____
____
(3)
35
20
25
40
ns
tPD
3090 tbl 12
NOTES:
1. 0° to +70°C temperature range only.
2. –55°C to +125°C temperature range only.
3. This parameter is guaranteed with AC Test load (Figure 2) by device characterization, but is not production tested.
Timing Waveform of Read Cycle No. 1(1, 2)
tRC
ADDRESS
tAA
tOH
DATAOUT
PREVIOUS DATA VALID
DATA VALID
3090 drw 06
,
Timing Waveform of Read Cycle No. 2(1, 3)
tRC
CS
tACS
(3)
tCHZ
(4)
tCLZ
HIGH IMPEDANCE
DATAOUT
DATAOUT VALID
HIGH IMPEDANCE
tPU
tPD
ICC
VCC
SUPPLY
CURRENT
ISB
,
3090 drw 07
NOTES:
1. WE is HIGH for Read cycle.
2. CS is LOW for Read cycle.
3. Device is continuously selected, CS is LOW.
3. Address valid prior to or coincident with CS transition LOW.
4. Transition is measured ±200mV from steady state.
6.42
5
IDT6168SA/LA
CMOS Static RAM 16K (4K x 4-Bit)
Military, Industrial, and Commercial Temperature Ranges
AC Electrical Characteristics (VCC = 5.0V ± 10%, All Temperature Ranges)
6168SA15(1 )
6168SA20(1 )
6168LA20(1 )
6168SA25
6168LA25
6168SA45(2 )
6168LA45(2 )
Symbol
Parameter
Unit
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Write Cycle
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
tWC
tCW
tAW
tAS
Write Cycle Time
Chip Select to End-of-Write
15
15
15
0
20
20
20
0
20
20
20
0
40
40
40
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Valid to End-of-Write
Address Set-up Time
tWP
tWR
tDW
tDH
Write Pulse Width
15
0
20
0
20
0
40
0
Write Recovery Time
Data to Valid to End-of-Write
Data Hold Time
9
10
10
20
0
0
0
3
____
____
____
____
(3)
Write Enable to Output in High-Z
6
7
7
20
tWHZ
____
____
____
____
(3)
Output Active from End-of-Write
0
0
0
0
ns
tOW
3090 tbl 13
NOTES:
1. 0° to +70°C temperature range only.
2. –55°C to +125°C temperature range only.
3. This parameter is guaranteed with the AC Load (Figure 2) by device characterization, but is not production tested.
6
IDT6168SA/LA
CMOS Static RAM 16K (4K x 4-Bit)
Military, Industrial, and Commercial Temperature Ranges
Timing Waveform of Write Cycle No. 1 (WE Controlled Timing)(1,2,5)
tWC
ADDRESS
tAW
CS
(3)
tWP
tWR
t AS
WE
(6)
CHZ
(6)
tWHZ
(6)
t
tOW
(4)
DATA
VALID (4)
DATAOUT
DATAIN
PREVIOUS DATA VALID
t DW
t DH
,
DATA VALID
3090 drw 08
Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)(1,2,5)
t WC
ADDRESS
t AW
CS
(3)
tWR
tAS
tCW
WE
t DW
t DH
DATAIN
DATA VALID
,
3090 drw 09
NOTES:
1. WE or CS must be HIGH during all address transitions.
2. A write occurs during the overlap of a LOW CS and a LOW WE.
3. tWR is measured from the earlier of CS or WE going HIGH to the end of the write cycle.
4. During this period, the I/O pins are in the output state and input signals should not be applied.
5. If the CS LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in the high impedance state.
6. Transition is measured ±200mV from steady state.
6.42
7
IDT6168SA/LA
CMOS Static RAM 16K (4K x 4-Bit)
Military, Industrial, and Commercial Temperature Ranges
Ordering Information -- Commercial & Industrial
IDT 6168
XX
XXX
XX
X
Device
Type
Power
Speed
Package
Process/
Temperature
Range
Commercial (0°C to +70°C)
Industrial (-45°C to +85°C)
Blank
I
P
300mil Plastic DIP (P20-1) (Commercial & Industrial only)
15*
20
Commercial Only
Commercial Only
Speed in nanoseconds
25
Commercial &Industrial
SA
LA
Standard Power
Low Power
*Standard power only.
3090 drw 10
Ordering Information -- Military
IDT 6168
XX
XXX
XX
X
Device
Type
Power
Speed
Package
Process/
Temperature
Range
B
Military (-55°C to +125°C)
Compliant to MIL-STD-883, Class B
D
L
300mil Ceramic DIP (D20-1)
20-pin Leadless Chip Carrier (L20-1)
25
45
Speed in nanoseconds
SA
LA
Standard Power
Low Power
3090 drw 10a
*Standard power only.
8
IDT6168SA/LA
CMOS Static RAM 16K (4K x 4-Bit)
Military, Industrial, and Commercial Temperature Ranges
DatasheetDocumentHistory
11/22/99
Updatedtonewformat
AddedDatasheetDocumentHistory
Pg. 8
Pg. 1, 2, 3, 5, 6, 8
Pg. 1, 2, 8
AddedIndustrialTemperaturerangeofferings
Revisedpackageofferings
Notrecommendedfornewdesigns
01/07/00
08/09/00
02/01/01
Removed"Notrecommendedfornewdesigns"
CORPORATE HEADQUARTERS
2975StenderWay
Santa Clara, CA 95054
for SALES:
for Tech Support:
sramhelp@idt.com
800 544-7726, x4033
800-345-7015 or 408-727-6116
fax:408-492-8674
www.idt.com
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
6.42
9
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