IDT709279L15G [IDT]

HIGH-SPEED 32/16K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM; 高速32 / 16K ×16同步双端口静态RAM
IDT709279L15G
型号: IDT709279L15G
厂家: INTEGRATED DEVICE TECHNOLOGY    INTEGRATED DEVICE TECHNOLOGY
描述:

HIGH-SPEED 32/16K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM
高速32 / 16K ×16同步双端口静态RAM

文件: 总18页 (文件大小:314K)
中文:  中文翻译
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HIGH-SPEED 32/16K x 16  
SYNCHRONOUS  
IDT709279/69S/L  
DUAL-PORT STATIC RAM  
Features  
True Dual-Ported memory cells which allow simultaneous  
Dual chip enables allow for depth expansion without  
additional logic  
Full synchronous operation on both ports  
– 4ns setup to clock and 1ns hold on all control, data, and  
addressinputs  
access of the same memory location  
High-speed clock to data access  
– Commercial:6.5/7.5/9/12/15ns(max.)  
– Industrial: 12ns (max.)  
Low-power operation  
– Data input, address, and control registers  
– IDT709279/69S  
Active:950mW(typ.)  
Standby: 5mW (typ.)  
– IDT709279/69L  
Active:950mW(typ.)  
Standby: 1mW (typ.)  
Flow-Through or Pipelined output mode on either port via  
the FT/PIPE pin  
Counter enable and reset features  
– Fast 6.5ns clock to data out in the Pipelined output mode  
– Self-timedwriteallowsfastcycletime  
– 10ns cycle time, 100MHz operation in Pipelined output mode  
Separate upper-byte and lower-byte controls for  
multiplexed bus and bus matching compatibility  
TTL- compatible, single 5V (±10%) power supply  
Industrial temperature range (–40°C to +85°C) is  
available for selected speeds  
Available in a 100-pin Thin Quad Flatpack (TQFP) package  
FunctionalBlockDiagram  
R/W  
R
R/W  
L
UBR  
UBL  
CE0L  
CE1L  
CE0R  
CE1R  
1
1
0
0
0/1  
0/1  
LB  
OE  
R
LB  
OE  
L
R
L
1a 0a  
1b 0b  
0a 1a  
0b 1b  
b
FT/PIPE  
L
0/1  
b
a
0/1  
a
FT/PIPE  
R
,
,
I/O8L  
I/O15L  
-
I/O8R-I/O15R  
I/O  
Control  
I/O  
Control  
I/O0L-I/O7L  
I/O0R-I/O7R  
(1)  
(1)  
A
14R  
0R  
A
14L  
Counter/  
Address  
Reg.  
Counter/  
Address  
Reg.  
A
MEMORY  
ARRAY  
A
0L  
CLK  
ADS  
CNTEN  
R
CLK  
ADS  
CNTEN  
L
L
L
R
R
CNTRST  
L
CNTRST  
R
3243 drw 01  
NOTE:  
1. A14X is a NC for IDT709269.  
JUNE 2004  
1
DSC-3243/13  
©2004IntegratedDeviceTechnology,Inc.  
IDT709279/69S/L  
Preliminary  
High-Speed 32/16K x 16 Synchronous Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
Description  
Withaninputdataregister,theIDT709279/69hasbeenoptimizedfor  
applicationshavingunidirectionalorbidirectionaldataflowinbursts.An  
automaticpowerdownfeature, controlledbyCE0andCE1, permitsthe  
on-chip circuitry of each port to enter a very low standby power mode.  
Fabricated using IDT’s CMOS high-performance technology, these  
devices typically operate on only 950mW of power.  
The IDT709279/69 is a high-speed 32/16K x 16 bit synchronous  
Dual-Port RAM. The memory array utilizes Dual-Port memory cells to  
allowsimultaneousaccessofanyaddressfrombothports.Registerson  
control,data,andaddressinputsprovideminimalsetupandholdtimes.  
The timing latitude provided by this approach allows systems to be  
designedwithveryshortcycletimes.  
PinConfigurations(2,3,4)  
01/15/04  
Index  
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76  
A
A
A
A
A
A
NC  
NC  
NC  
LB  
UB  
CE0R  
CE1R  
CNTRST  
GND  
R/W  
OE  
FT/PIPE  
GND  
I/O15R  
I/O14R  
I/O13R  
I/O12R  
9R  
A
9L  
1
75  
74  
10R  
11R  
12R  
13R  
14R  
A
10L  
2
3
A
A
11L  
12L  
73  
72  
71  
70  
69  
68  
67  
66  
65  
64  
63  
62  
61  
60  
59  
58  
57  
56  
55  
54  
53  
52  
51  
4
A
14L  
13L  
(1)  
5
(1)  
A
6
7
NC  
NC  
NC  
LB  
UB  
8
9
R
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
L
IDT709279/69PF  
R
L
(5)  
PN100-1  
CE0L  
CE1L  
CNTRST  
,
100-Pin TQFP  
R
(6)  
L
Top View  
V
CC  
R
R/W  
OE  
FT/PIPE  
L
R
L
L
R
GND  
I/O15L  
I/O14L  
I/O13L  
I/O12L  
I/O11L  
I/O10L  
I/O11R  
I/O10R  
26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50  
3243 drw 02  
NOTES:  
1. A14X is a NC for IDT709269.  
2. All VCC pins must be connected to power supply.  
3. All GND pins must be connected to ground supply.  
4. Package body is approximately 14mm x 14mm x 1.4mm  
5. This package code is used to reference the package diagram.  
6. This text does not indicate orientation of the actual part-marking.  
2
6.42  
IDT709279/69S/L  
Preliminary  
High-Speed 32/16K x 16 Synchronous Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
PinNames  
Left Port  
Right Port  
CE0R, CE1R  
R/W  
OE  
Names  
Chip Enables(3)  
CE0L, CE1L  
R/W  
OE  
L
R
Read/Write Enable  
Output Enable  
Address  
L
R
(1)  
(1)  
A
0L - A14L  
A0R - A14R  
I/O0L - I/O15L  
CLK  
I/O0R - I/O15R  
CLK  
Data Input/Output  
Clock  
L
R
Upper Byte Select(2)  
Lower Byte Select(2)  
Address Strobe  
Counter Enable  
Counter Reset  
Flow-Through/Pipeline  
Power  
UB  
LB  
ADS  
CNTEN  
CNTRST  
FT/PIPE  
L
UB  
LB  
ADS  
CNTEN  
CNTRST  
FT/PIPE  
R
L
R
L
R
NOTES:  
1. A14x is a NC for IDT709269.  
2. LB and UB are single buffered regardless of state of FT/PIPE.  
3. CEo and CE1 are single buffered when FT/PIPE = VIL,  
CEo and CE1 are double buffered when FT/PIPE = VIH,  
i.e. the signals take two cycles to deselect.  
L
R
L
R
L
R
V
SS  
GND  
Ground  
3243 tbl 01  
Truth Table I—Read/Write and Enable Control(1,2,3)  
Upper Byte  
I/O8-15  
Lower Byte  
I/O0-7  
CLK  
CE  
1
R/W  
Mode  
OE  
X
X
X
X
X
X
L
CE  
0
UB  
X
X
H
L
LB  
X
X
H
H
L
H
X
L
L
L
L
L
L
L
L
X
X
High-Z  
High-Z  
High-Z  
High-Z  
High-Z  
High-Z  
High-Z  
Deselected—Power Down  
L
X
Deselected—Power Down  
Both Bytes Deselected  
Write to Upper Byte Only  
Write to Lower Byte Only  
Write to Both Bytes  
H
H
H
H
H
H
H
H
X
L
DIN  
H
L
L
High-Z  
DIN  
L
L
DIN  
DIN  
L
H
L
H
H
H
X
DOUT  
High-Z  
Read Upper Byte Only  
Read Lower Byte Only  
Read Both Bytes  
L
H
L
High-Z  
D
OUT  
OUT  
L
L
DOUT  
D
H
X
L
L
High-Z  
High-Z  
Outputs Disabled  
3243 tbl 02  
NOTES:  
1. "H" = VIH, "L" = VIL, "X" = Don't Care.  
2. ADS, CNTEN, CNTRST = X.  
3. OE is an asynchronous input signal.  
6.432  
IDT709279/69S/L  
Preliminary  
High-Speed 32/16K x 16 Synchronous Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
Truth Table II—Address Counter Control(1,2)  
Previous  
Internal  
Address  
Internal  
Address  
Used  
External  
Address  
MODE  
CLK  
I/O(3)  
DI/O (n) External Address Used  
ADS CNTEN CNTRST  
An  
X
X
An  
An  
L(4)  
H
X
H
H
An + 1  
An + 1  
L(5)  
H
D
I/O(n+1) Counter Enabled—Internal Address generation  
X
An + 1  
X
H
H
D
I/O(n+1) External Address Blocked—Counter disabled (An + 1 reused)  
X
A0  
X
X
L(4)  
DI/O(0)  
Counter Reset to Address 0  
3243 tbl 03  
NOTES:  
1. "H" = VIH, "L" = VIL, "X" = Don't Care.  
2. CE0, LB, UB, and OE = VIL; CE1 and R/W = VIH.  
3. Outputs configured in Flow-Through Output mode: if outputs are in Pipelined mode the data out will be delayed by one cycle.  
4. ADS is independent of all other signals including CE0, CE1, UB and LB.  
5. The address counter advances if CNTEN = VIL on the rising edge of CLK, regardless of all other signals including CE0, CE1, UB and LB.  
RecommendedDCOperating  
Conditions  
RecommendedOperating  
Temperature and Supply Voltage(1)  
Symbol  
Parameter  
Supply Voltage  
Min.  
4.5  
Typ.  
Max. Unit  
Grade  
Ambient  
Temperature  
GND  
VCC  
V
CC  
5.0  
5.5  
0
V
V
V
Commercial  
0OC to +70OC  
0V  
0V  
5.0V  
5.0V  
+
+
10%  
GND  
Ground  
0
0
Industrial  
-40OC to +85OC  
10%  
V
IH  
IL  
Input High Voltage  
Input Low Voltage  
2.2  
6.0(1)  
0.8  
____  
3243 tbl 04  
-0.5(2)  
V
____  
NOTES:  
V
1. This is the parameter TA. This is the "instant on" case temperature.  
3243 tbl 05  
NOTES:  
1. VTERM must not exceed VCC + 10%.  
2. VIL > -1.5V for pulse width less than 10ns.  
AbsoluteMaximumRatings(1)  
Capacitance(1)  
(TA = +25°C, f = 1.0MHz)  
Symbol  
Rating  
Commercial  
& Industrial  
Unit  
Symbol  
Parameter  
Input Capacitance  
Output Capacitance  
Conditions(2)  
IN = 0V  
OUT = 0V  
Max. Unit  
(2)  
V
TERM  
Terminal Voltage  
with Respect  
to GND  
-0.5 to +7.0  
V
CIN  
V
9
pF  
(2)  
OUT  
C
V
10  
pF  
T
BIAS  
STG  
JN  
OUT  
TemperatureUnder Bias  
Storage Temperature  
Junction Temperature  
DC Output Current  
-55 to +125  
-65 to +150  
+150  
oC  
oC  
oC  
3243 tbl 07  
NOTES:  
T
1. These parameters are determined by device characterization, but are not  
production tested.  
T
2. COUT also references CI/O.  
I
50  
mA  
3243 tbl 06  
NOTES:  
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may  
cause permanent damage to the device. This is a stress rating only and  
functional operation of the device at these or any other conditions above those  
indicated in the operational sections of this specification is not implied. Exposure  
to absolute maximum rating conditions for extended periods may affect  
reliability.  
2. VTERM must not exceed VCC + 10% for more than 25% of the cycle time or 10ns  
maximum, and is limited to < 20mA for the period of VTERM > VCC + 10%.  
3. Ambient Temperature Under Bias. No AC Conditions. Chip Deselect.  
4
6.42  
IDT709279/69S/L  
Preliminary  
High-Speed 32/16K x 16 Synchronous Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
DC Electrical Characteristics Over the Operating  
Temperature Supply Voltage Range (VCC = 5.0V ± 10%)  
709279/69S/L  
Min. Max.  
Symbol  
|ILI  
|ILO  
Parameter  
Input Leakage Current(1)  
Test Conditions  
CC = 5.5V, VIN = 0V to VCC  
CE = VIH or CE = VIL, VOUT = 0V to VCC  
OL = +4mA  
OH = -4mA  
Unit  
µA  
µA  
V
___  
___  
___  
|
V
10  
10  
|
Output Leakage Current  
Output Low Voltage  
Output High Voltage  
0
1
V
OL  
OH  
I
0.4  
___  
V
I
2.4  
V
3243 tbl 08  
NOTE:  
1. At VCC < 2.0V input leakages are undefined.  
DC Electrical Characteristics Over the Operating  
Temperature and Supply Voltage Range(6) (VCC = 5V ± 10%)  
709279/69X6  
Com'l Only  
709279/69X7  
Com'l Only  
709279/69X9  
Com'l Only  
Symbol  
Parameter  
Test Condition  
= VIL  
Version  
COM'L  
Typ.(4)  
Max.  
Typ.(4)  
Max.  
Typ.(4)  
Max.  
Unit  
ICC  
Dynamic Operating  
Current  
(Both Ports Active)  
S
L
270  
270  
585  
525  
250  
250  
490  
440  
210  
210  
390  
350  
mA  
CE  
L
and CE  
R
Outputs Disabled  
(1)  
f = fMAX  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
IND  
S
L
I
SB1  
Standby Current  
(Both Ports - TTL  
Level Inputs)  
COM'L  
IND  
S
L
80  
80  
205  
175  
65  
65  
170  
145  
50  
50  
135  
115  
mA  
mA  
CE  
L
= CER = VIH  
(1)  
f = fMAX  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
S
L
ISB2  
Standby Current  
(One Port - TTL  
Level Inputs)  
COM'L  
IND  
S
L
180  
180  
405  
360  
160  
160  
340  
295  
140  
140  
270  
240  
CE"A" = VIL and  
(3)  
CE"B" = VIH  
Active Port Outputs  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
(1)  
S
L
Disabled, f=fMAX  
ISB3  
Full Standby Current  
(Both Ports -  
CMOS Level Inputs)  
Both Ports CE  
R
and  
COM'L  
IND  
S
L
1.0  
0.2  
15  
5
1.0  
0.2  
15  
5
1.0  
0.2  
15  
5
mA  
CE  
L
> VCC - 0.2V  
V
V
IN > VCC - 0.2V or  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
IN < 0.2V, f = 0(2)  
S
L
ISB4  
Full Standby Current  
(One Port -  
CMOS Level Inputs)  
mA  
COM'L  
IND  
S
L
170  
170  
395  
340  
150  
150  
330  
290  
130  
130  
245  
225  
CE"A" < 0.2V and  
CE"B" > VCC - 0.2V(5)  
V
V
IN > VCC - 0.2V or  
IN < 0.2V, Active Port Outputs  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
S
L
(1)  
Disabled, f = fMAX  
3243 tbl 09  
NOTES:  
1. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of 1/tCYC, using "AC TEST CONDITIONS" at input  
levels of GND to 3V.  
2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby.  
3. Port "A" may be either left or right port. Port "B" is the opposite from port "A".  
4. VCC = 5V, TA = 25°C for Typ, and are not production tested. ICC DC(f=0) = 150mA (Typ).  
5. CEX = VIL means CE0X = VIL and CE1X = VIH  
CEX = VIH means CE0X = VIH or CE1X = VIL  
CEX < 0.2V means CE0X < 0.2V and CE1X > VCC - 0.2V  
CEX > VCC - 0.2V means CE0X > VCC - 0.2V or CE1X < 0.2V  
"X" represents "L" for left port or "R" for right port.  
6. 'X' in part numbers indicate power rating (S or L).  
6.452  
IDT709279/69S/L  
Preliminary  
High-Speed 32/16K x 16 Synchronous Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
DC Electrical Characteristics Over the Operating  
Temperature and Supply Voltage Range(6) (VCC = 5V ± 10%)  
709279/69X12  
Com'l  
709279/69X15  
Com'l Only  
& Ind  
Symbol  
Parameter  
Test Condition  
and CE = VIL  
Version  
COM'L  
Typ.(4)  
Max.  
Typ.(4)  
Max.  
Unit  
ICC  
Dynamic Operating  
Current  
(Both Ports Active)  
S
L
200  
200  
345  
305  
190  
190  
325  
285  
mA  
CE  
L
R
(1)  
Outputs Disabled f = fMAX  
____  
____  
____  
____  
IND  
S
L
200  
200  
380  
340  
I
SB1  
Standby Current  
(Both Ports - TTL  
Level Inputs)  
COM'L  
IND  
S
L
50  
50  
110  
90  
50  
50  
110  
90  
mA  
mA  
CE  
L = CER = VIH  
(1)  
f = fMAX  
____  
____  
____  
____  
S
L
50  
50  
125  
105  
ISB2  
Standby Current  
(One Port - TTL  
Level Inputs)  
COM'L  
IND  
S
L
130  
130  
230  
200  
120  
120  
220  
190  
CE"A" = VIL and  
(3)  
CE"B" = VIH  
Active Port Outputs  
____  
____  
____  
____  
(1)  
S
L
130  
130  
245  
215  
Disabled, f=fMAX  
ISB3  
Full Standby Current  
(Both Ports -  
CMOS Level Inputs)  
Both Ports CE  
R
and  
COM'L  
IND  
S
L
1.0  
0.2  
15  
5
1.0  
0.2  
15  
5
mA  
CE  
L
> VCC - 0.2V  
V
IN > VCC - 0.2V or  
____  
____  
____  
____  
IN < 0.2V, f = 0(2)  
S
L
1.0  
0.2  
15  
5
V
ISB4  
Full Standby Current  
(One Port -  
CMOS Level Inputs)  
mA  
COM'L  
IND  
S
L
120  
120  
205  
185  
110  
110  
195  
175  
CE"A" < 0.2V and  
CE"B" > VCC - 0.2V(5)  
V
IN > VCC - 0.2V or  
IN < 0.2V, Active Port Outputs  
____  
____  
____  
____  
S
L
120  
120  
220  
200  
V
(1)  
Disabled, f = fMAX  
3243 tbl 09a  
NOTES:  
1. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of 1/tCYC, using "AC TEST CONDITIONS" at input  
levels of GND to 3V.  
2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby.  
3. Port "A" may be either left or right port. Port "B" is the opposite from port "A".  
4. VCC = 5V, TA = 25°C for Typ, and are not production tested. ICC DC(f=0) = 150mA (Typ).  
5. CEX = VIL means CE0X = VIL and CE1X = VIH  
CEX = VIH means CE0X = VIH or CE1X = VIL  
CEX < 0.2V means CE0X < 0.2V and CE1X > VCC - 0.2V  
CEX > VCC - 0.2V means CE0X > VCC - 0.2V or CE1X < 0.2V  
"X" represents "L" for left port or "R" for right port.  
6. 'X' in part numbers indicate power rating (S or L).  
6
6.42  
IDT709279/69S/L  
Preliminary  
High-Speed 32/16K x 16 Synchronous Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
AC Test Conditions  
Input Pulse Levels  
GND to 3.0V  
3ns Max.  
Input Rise/Fall Times  
Input Timing Reference Levels  
Output Reference Levels  
Output Load  
1.5V  
1.5V  
Figures 1,2 and 3  
3243 tbl 10  
5V  
5V  
893  
893Ω  
DATAOUT  
DATAOUT  
30pF  
347Ω  
5pF*  
347Ω  
3243 drw 04  
3243 drw 05  
Figure 1. AC Output Test load.  
Figure 2. Output Test Load  
(For tCKLZ, tCKHZ, tOLZ, and tOHZ).  
*Including scope and jig.  
8
7
6
5
- 10pF is the I/O capacitance  
of this device, and 30pF is the  
AC Test Load Capacitance  
tCD  
tCD  
(Typical, ns)  
1
,
4
3
2
1
2
0
,
20 40 60 80 100 120 140 160 180 200  
Capacitance (pF)  
-1  
3243 drw 06  
Figure 3. Typical Output Derating (Lumped Capacitive Load).  
6.472  
IDT709279/69S/L  
Preliminary  
High-Speed 32/16K x 16 Synchronous Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
AC Electrical Characteristics Over the Operating Temperature Range  
(Read and Write Cycle Timing)(3,4) (VCC = 5V ± 10%, TA = 0°C to +70°C)  
709279/69X6  
Com'l Only  
709279/69X7  
Com'l Only  
709279/69X9  
Com'l Only  
709279/69X12  
Com'l  
709279/69X15  
Com'l Only  
& Ind  
Symbol  
Parameter  
Clock Cycle Time (Flow-Through)(2)  
Min.  
Max.  
Min.  
22  
Max.  
Min.  
Max.  
Min.  
30  
20  
12  
12  
8
Max.  
Min.  
35  
Max.  
Unit  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
____  
____  
____  
____  
____  
t
CYC1  
CYC2  
CH1  
CL1  
CH2  
CL2  
19  
10  
6.5  
6.5  
4
25  
15  
12  
12  
6
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
t
Clock Cycle Time (Pipelined)(2)  
Clock High Time (Flow-Through)(2)  
Clock Low Time (Flow-Through)(2)  
Clock High Time (Pipelined)(2)  
Clock Low Time (Pipelined)(2)  
Clock Rise Time  
12  
25  
t
7.5  
7.5  
5
12  
t
12  
t
10  
t
4
5
6
8
10  
____  
____  
____  
____  
____  
tR  
3
3
3
3
3
____  
____  
____  
____  
____  
tF  
Clock Fall Time  
3
3
3
3
3
____  
____  
____  
____  
____  
t
SA  
HA  
SC  
HC  
SW  
HW  
SD  
HD  
SAD  
HAD  
SCN  
HCN  
SRST  
HRST  
OE  
OLZ  
OHZ  
CD1  
CD2  
DC  
CKHZ  
CKLZ  
Address Setup Time  
Address Hold Time  
3.5  
0
4
0
4
0
4
0
4
0
4
0
4
0
4
4
1
4
1
4
1
4
1
4
1
4
1
4
4
1
4
1
4
1
4
1
4
1
4
1
4
4
1
4
1
4
1
4
1
4
1
4
1
4
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
t
t
Chip Enable Setup Time  
Chip Enable Hold Time  
R/W Setup Time  
3.5  
0
t
t
3.5  
0
t
R/W Hold Time  
t
Input Data Setup Time  
Input Data Hold Time  
ADS Setup Time  
3.5  
0
t
t
3.5  
0
t
ADS Hold Time  
t
3.5  
0
CNTEN Setup Time  
t
CNTEN Hold Time  
t
3.5  
CNTRST Setup Time  
CNTRST Hold Time  
t
0
0
1
1
1
____  
____  
____  
____  
____  
t
Output Enable to Data Valid  
6.5  
7.5  
9
12  
15  
(1)  
____  
____  
____  
____  
____  
t
Output Enable to Output Low-Z  
2
2
2
2
2
t
Output Enable to Output High-Z(1)  
Clock to Data Valid (Flow-Through)(2)  
Clock to Data Valid (Pipelined)(2)  
Data Output Hold After Clock High  
Clock High to Output High-Z(1)  
Clock High to Output Low-Z(1)  
1
7
1
7
1
7
1
7
1
7
____  
____  
____  
____  
____  
t
15  
18  
20  
25  
30  
____  
____  
____  
____  
____  
t
6.5  
7.5  
9
12  
15  
____  
____  
____  
____  
____  
t
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
t
9
9
9
9
9
____  
____  
____  
____  
____  
t
Port-to-Port Delay  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
t
CWDD  
Write Port Clock High to Read Data Delay  
Clock-to-Clock Setup Time  
24  
9
28  
10  
35  
15  
40  
15  
50  
20  
ns  
tCCS  
ns  
3243 tbl 11  
NOTES:  
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2). This parameter is guaranteed by device characteriza-  
tion, but is not production tested.  
2. The Pipelined output parameters (tCYC2, tCD2) apply to either or both left and right ports when FT/PIPE = VIH. Flow-through parameters (tCYC1, tCD1) apply when  
FT/PIPE = VIL for that port.  
3. All input signals are synchronous with respect to the clock except for the asynchronous Output Enable (OE) and FT/PIPE. FT/PIPE should be treated as a DC  
signal, i.e. steady state during operation.  
4. 'X' in part number indicates power rating (S or L).  
8
6.42  
IDT709279/69S/L  
Preliminary  
High-Speed 32/16K x 16 Synchronous Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
Timing Waveform of Read Cycle for Flow-Through Output  
(FT/PIPE"X" = VIL)(3,7)  
t
CYC1  
tCH1  
tCL1  
CLK  
CE0  
t
SC  
tHC  
t
SC  
t
HC  
HB  
(4)  
CE1  
tSB  
t
UB, LB  
R/W  
tHB  
tSB  
tHW  
tSW  
t
SA  
t
HA  
ADDRESS(5)  
DATAOUT  
An  
An + 1  
An + 2  
An + 3  
(1)  
tDC  
tCD1  
tCKHZ  
Qn  
Qn + 1  
Qn + 2  
(1)  
(1)  
t
CKLZ  
tDC  
(1)  
tOHZ  
tOLZ  
OE (2)  
tOE  
3243 drw 07  
Timing Waveform of Read Cycle for Pipelined Output (FT/PIPE"X" = VIH)(3,7)  
t
CYC2  
t
CH2  
tCL2  
CLK  
CE  
0
tSC  
tHC  
tSC  
tHC  
(4)  
CE1  
t
SB  
tHB  
tHB  
tSB  
(6)  
UB, LB  
R/W  
t
HW  
t
SW  
SA  
t
t
HA  
ADDRESS(5)  
DATAOUT  
An  
An + 1  
An + 2  
Qn  
An + 3  
(1 Latency)  
tDC  
tCD2  
Qn + 1  
Qn + 2 (6)  
(1)  
tCKLZ  
(1)  
(1)  
t
OHZ  
tOLZ  
OE(2)  
tOE  
3243 drw 08  
NOTES:  
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).  
2. OE is asynchronously controlled; all other inputs are synchronous to the rising clock edge.  
3. ADS = VIL, CNTEN and CNTRST = VIH.  
4. The output is disabled (High-Impedance state) by CE0 = VIH, CE1 = VIL, UB = VIH, or LB = VIH following the next rising edge of the clock. Refer to Truth Table 1.  
5. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers  
are for reference use only.  
6. If UB or LB was HIGH, then the Upper Byte and/or Lower Byte of DATAOUT for Qn + 2 would be disabled (High-Impedance state).  
7. "x" denotes Left or Right port. The diagram is with respect to that port.  
6.492  
IDT709279/69S/L  
Preliminary  
High-Speed 32/16K x 16 Synchronous Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
Timing Waveform of a Bank Select Pipelined Read(1,2)  
t
CYC2  
tCH2  
tCL2  
CLK  
ADDRESS(B1)  
CE0(B1)  
t
SA  
tHA  
A6  
A5  
A4  
A3  
A
2
A
0
A1  
t
SC  
tHC  
t
SC  
tHC  
(3)  
CKHZ  
tCD2  
tCD2  
t
tCD2  
Q
0
Q3  
Q
1
DATAOUT(B1)  
ADDRESS(B2)  
(3)  
(3)  
tDC  
tCKLZ  
t
DC  
t
CKHZ  
tSA  
tHA  
A6  
A5  
A4  
A3  
A2  
A
0
A1  
t
SC  
tHC  
CE0(B2)  
t
SC  
t
HC  
(3)  
tCD2  
t
CKHZ  
tCD2  
DATAOUT(B2)  
Q4  
Q2  
(3)  
(3)  
tCKLZ  
tCKLZ  
3243 drw 09  
Timing Waveform of a Bank Select Flow-Through Read(6)  
t
CYC1  
tCH1  
tCL1  
CLK  
tSA  
tHA  
A6  
A5  
A4  
A3  
A2  
A0  
A1  
ADDRESS(B1)  
t
SC  
tHC  
CE0(B1)  
tSC  
tHC  
(1)  
tCD1  
tCD1  
tCKHZ  
tCD1  
tCD1  
D
0
D
3
D5  
D
1
DATAOUT(B1)  
ADDRESS(B2)  
(1)  
(1)  
(1)  
tDC  
tCKLZ  
tCKLZ  
tDC  
t
CKHZ  
tSA  
tHA  
A6  
A
5
A4  
A3  
A2  
A
0
A1  
tSC  
tHC  
CE0(B2)  
t
SC  
tHC  
(1)  
(1)  
tCD1  
tCKHZ  
tCD1  
t
CKHZ  
D4  
DATAOUT(B2)  
D2  
(1)  
(1)  
tCKLZ  
tCKLZ  
3243 drw 09a  
NOTES:  
1. B1 Represents Bank #1; B2 Represents Bank #2. Each Bank consists of one IDT709279/69 for this waveform, and are setup for depth expansion in this  
example. ADDRESS(B1) = ADDRESS(B2) in this situation.  
2. UB, LB, OE, and ADS = VIL; CE1(B1), CE1(B2), R/W, CNTEN, and CNTRST = VIH.  
3. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).  
4. CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and CNTRST = VIH.  
5. OE = VIL for the Right Port, which is being read from. OE = VIH for the Left Port, which is being written to.  
6. If tCCS < maximum specified, then data from right port READ is not valid until the maximum specified for tCWDD.  
If tCCS > maximum specified, then data from right port READ is not valid until tCCS + tCD1. tCWDD does not apply in this case.  
10  
6.42  
IDT709279/69S/L  
Preliminary  
High-Speed 32/16K x 16 Synchronous Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
Timing Waveform with Port-to-Port Flow-Through Read(1,2,3,5)  
CLK "A"  
tSW  
tHW  
R/W "A"  
ADDRESS "A"  
DATAIN "A"  
CLK "B"  
t
SA  
MATCH  
SD HD  
VALID  
tHA  
NO  
MATCH  
t
t
(4)  
tCCS  
tCD1  
R/W "B"  
tHW  
t
SW  
tHA  
tSA  
NO  
MATCH  
ADDRESS "B"  
DATAOUT "B"  
MATCH  
(4)  
tCD1  
tCWDD  
VALID  
VALID  
t
DC  
t
DC  
3243 drw 10  
NOTES:  
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).  
2. CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and CNTRST = VIH.  
3. OE = VIL for the Right Port, which is being read from. OE = VIH for the Left Port, which is being written to.  
4. If tCCS < maximum specified, then data from right port READ is not valid until the maximum specified for tCWDD.  
If tCCS > maximum specified, then data from right port READ is not valid until tCCS + tCD1. tCWDD does not apply in this case.  
5. All timing is the same for both left and right ports. Port "A" may be either left or right port. Port "B" is the opposite of Port "A".  
6.1412  
IDT709279/69S/L  
Preliminary  
High-Speed 32/16K x 16 Synchronous Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
Timing Waveform of Pipelined Read-to-Write-to-Read (OE = VIL)(3)  
t
CYC2  
tCH2  
tCL2  
CLK  
CE0  
t
SC  
tHC  
CE1  
tSB  
tHB  
UB, LB  
R/W  
tSW tHW  
tSW tHW  
(4)  
An + 3  
An + 4  
An  
An +1  
An + 2  
An + 2  
ADDRESS  
t
SA  
tHA  
tSD  
t
HD  
DATAIN  
Dn + 2  
(1)  
(1)  
tCKLZ  
tCD2  
t
CD2  
(2)  
tCKHZ  
Qn + 3  
Qn  
DATAOUT  
READ  
NOP(5)  
WRITE  
READ  
3243 drw 11  
Timing Waveforn of Pipelined Read-to-Write-to-Read (OE Controlled)(3)  
t
CYC2  
tCH2  
tCL2  
CLK  
CE0  
tSC  
tHC  
CE1  
t
SB  
tHB  
UB, LB  
R/W  
tSW tHW  
tSW tHW  
(4)  
An + 4  
An  
An +1  
An + 2  
An + 3  
Dn + 3  
An + 5  
ADDRESS  
t
SA  
tHA  
t
SD  
t
HD  
DATAIN  
Dn + 2  
(1)  
CKLZ  
t
CD2  
tCD2  
t
(2)  
Qn  
Qn + 4  
DATAOUT  
(1)  
t
OHZ  
OE  
READ  
WRITE  
READ  
3243 drw 12  
NOTES:  
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).  
2. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.  
3. CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and CNTRST = VIH.  
4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use  
only.  
5. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.  
12  
6.42  
IDT709279/69S/L  
Preliminary  
High-Speed 32/16K x 16 Synchronous Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
Timing Waveform of Flow-Through Read-to-Write-to-Read (OE = VIL)(3)  
t
CYC1  
tCH1  
tCL1  
CLK  
CE0  
tSC  
tHC  
CE1  
tSB  
tHB  
UB, LB  
R/W  
t
SW tHW  
tSW tHW  
(4)  
An + 4  
An  
An + 3  
An +1  
An + 2  
An + 2  
ADDRESS  
tSA  
tHA  
tSD tHD  
DATAIN  
Dn + 2  
tCD1  
t
CD1  
tCD1  
tCD1  
(2)  
Qn + 3  
Qn  
READ  
Qn + 1  
DATAOUT  
(1)  
CKLZ  
(1)  
tDC  
tDC  
t
t
CKHZ  
NOP(5)  
READ  
WRITE  
3243 drw 13  
TimingWaveformofFlow-ThroughRead-to-Write-to-Read(OEControlled)(3)  
tCYC1  
tCH1  
tCL1  
CLK  
CE0  
tSC  
tHC  
CE1  
tSB  
tHB  
UB, LB  
R/W  
tSW tHW  
t
SW tHW  
(4)  
An + 5  
An  
tHA  
An +1  
An + 2  
An + 3  
Dn + 3  
An + 4  
ADDRESS  
tSA  
t
SD tHD  
DATAIN  
Dn + 2  
tOE  
tDC  
tCD1  
tCD1  
tCD1  
(2)  
Qn + 4  
Qn  
DATAOUT  
(1)  
CKLZ  
(1)  
t
tOHZ  
tDC  
OE  
READ  
WRITE  
READ  
3243 drw 14  
NOTES:  
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).  
2. Output state (High, Low, or High-impedance is determined by the previous cycle control signals.  
3. CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and CNTRST = VIH.  
4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use  
only.  
5. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.  
6.1432  
IDT709279/69S/L  
Preliminary  
High-Speed 32/16K x 16 Synchronous Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
Timing Waveform of Pipelined Read with Address Counter Advance(1)  
t
CYC2  
tCH2  
tCL2  
CLK  
tSA  
tHA  
An  
ADDRESS  
tSAD tHAD  
ADS  
tSAD tHAD  
CNTEN  
tSCN tHCN  
tCD2  
Qn + 2(2)  
Qx - 1(2)  
Qn + 3  
Qn + 1  
Qn  
Qx  
DATAOUT  
tDC  
READ  
EXTERNAL  
ADDRESS  
READ  
WITH  
COUNTER  
COUNTER  
HOLD  
READ WITH COUNTER  
3243 drw 15  
TimingWaveformof Flow-ThroughReadwithAddressCounterAdvance(1)  
t
CYC1  
tCH1  
tCL1  
CLK  
t
SA  
tHA  
An  
ADDRESS  
t
SAD tHAD  
ADS  
t
SAD  
tHAD  
t
SCN  
t
HCN  
CNTEN  
tCD1  
Qn + 3(2)  
Qx(2)  
Qn + 4  
Qn + 1  
Qn + 2  
Qn  
DATAOUT  
tDC  
READ  
WITH  
COUNTER  
READ  
EXTERNAL  
ADDRESS  
READ WITH COUNTER  
COUNTER  
HOLD  
3243 drw 16  
NOTES:  
1. CE0, OE, UB, and LB = VIL; CE1, R/W, and CNTRST = VIH.  
2. If there is no address change via ADS = VIL (loading a new address) or CNTEN = VIL (advancing the address), i.e. ADS = VIH and CNTEN = VIH, then the data  
output remains constant for subsequent clocks.  
14  
6.42  
IDT709279/69S/L  
Preliminary  
High-Speed 32/16K x 16 Synchronous Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
Timing Waveform of Write with Address Counter Advance  
(Flow-Through or Pipelined Outputs)(1)  
t
CYC2  
tCH2  
tCL2  
CLK  
tSA  
tHA  
An  
ADDRESS  
INTERNAL(3)  
ADDRESS  
An(1)  
An + 4  
An + 2  
An + 1  
An + 3  
tSAD tHAD  
ADS  
CNTEN  
tSD tHD  
Dn + 4  
Dn + 1  
Dn + 3  
Dn  
Dn + 1  
Dn + 2  
DATAIN  
WRITE  
EXTERNAL  
ADDRESS  
WRITE  
WITH COUNTER  
WRITE  
COUNTER HOLD  
WRITE WITH COUNTER  
3243 drw 17  
Timing Waveform of Counter Reset (Pipelined Outputs)(2)  
t
CYC2  
tCH2  
tCL2  
CLK  
tSA tHA  
(4)  
An + 2  
An  
An + 1  
ADDRESS  
INTERNAL(3)  
ADDRESS  
Ax(6)  
0
An + 1  
1
An  
t
SW tHW  
R/W  
ADS  
CNTEN  
tSRST  
tHRST  
CNTRST  
tSD  
tHD  
D0  
DATAIN  
(5)  
Qn  
Q1  
Q0  
DATAOUT  
COUNTER  
RESET  
WRITE  
ADDRESS 0  
READ  
ADDRESS 0  
READ  
ADDRESS n  
READ  
ADDRESS n+1  
READ  
ADDRESS 1  
3243 drw 18  
NOTES:  
1. CE0, UB, LB, and R/W = VIL; CE1 and CNTRST = VIH.  
CE0, UB, LB = VIL; CE1 = VIH.  
2.  
3. The "Internal Address" is equal to the "External Address" when ADS = VIL and equals the counter output when ADS = VIH.  
4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use  
only.  
5. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.  
6. No dead cycle exists during counter reset. A READ or WRITE cycle may be coincidental with the counter reset cycle. ADDR0 will be accessed. Extra cycles  
are shown here simply for clarification.  
7. CNTEN = VIL advances Internal Address from ‘An’ to ‘An +1’. The transition shown indicates the time required for the counter to advance. The ‘An +1’Address is  
written to during this cycle.  
6.1452  
IDT709279/69S/L  
Preliminary  
High-Speed 32/16K x 16 Synchronous Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
Depth and Width Expansion  
AFunctionalDescription  
The IDT709279/69 features dual chip enables (refer to Truth Table  
I)inordertofacilitaterapidandsimpledepthexpansionwithnorequire-  
mentsforexternallogic.Figure4illustrateshowtocontrolthevariouschip  
enables in order to expand two devices in depth.  
The IDT709279/69 provides a true synchronous Dual-Port Static  
RAM interface.Registeredinputsprovideminimalset-upandholdtimes  
onaddress, data, andallcriticalcontrolinputs. Allinternalregistersare  
clocked on the rising edge of the clock signal, however, the self-timed  
internalwritepulseisindependentoftheLOWtoHIGHtransitionoftheclock  
signal.  
The IDT709279/69 can also be used in applications requiring ex-  
pandedwidth,asindicatedinFigure4.Sincethebanksareallocatedat  
thediscretionoftheuser,theexternalcontrollercanbesetuptodrivethe  
input signals for the various devices as required to allow for 32-bit  
orwiderapplications.  
An asynchronous output enable is provided to ease asynchronous  
bus interfacing. Counter enable inputs are also provided to stall the  
operationoftheaddresscountersforfastinterleavedmemoryapplications.  
AHIGHonCE0oraLOWonCE1 foroneclockcyclewillpowerdown  
the internal circuitry to reduce static power consumption. Multiple chip  
enables allow easier banking of multiple IDT709279/69's for depth  
expansionconfigurations.WhenthePipelinedoutputmodeisenabled,two  
cycles are required with CE0 LOW and CE1 HIGH to re-activate the  
outputs.  
(1)  
A15/A14  
IDT709279/69  
IDT709279/69  
CE0  
CE0  
VCC  
VCC  
CE1  
CE1  
Control Inputs  
Control Inputs  
IDT709279/69  
IDT709279/69  
CE1  
CE1  
CE0  
CE0  
,
CNTRST  
CLK  
Control Inputs  
Control Inputs  
ADS  
CNTEN  
R/W  
3243 drw 19  
OE  
Figure 4. Depth and Width Expansion with IDT709279/69  
NOTE:  
1. A14 is for IDT709269.  
16  
6.42  
IDT709279/69S/L  
Preliminary  
High-Speed 32/16K x 16 Synchronous Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
OrderingInformation  
IDT XXXXX  
A
99  
A
A
Device  
Type  
Power Speed  
Package  
Process/  
Temperature  
Range  
Blank  
I(1)  
Commercial (0°C to +70°C)  
Industrial (-40°C to +85°C)  
PF  
G
100-pin TQFP (PN100-1)  
108-pin PGA (G108-1)  
6
7
Commercial Only  
Commercial Only  
Speed in nanoseconds  
9
Commercial Only  
12  
15  
Commercial & Industrial  
Commercial Only  
S
L
Standard Power  
Low Power  
,
512K (32K x 16-Bit) Synchronous Dual-Port RAM  
256K (16K x 16-Bit) Synchronous Dual-Port RAM  
709279  
709269  
3243 drw 20  
NOTES:  
1. Industrialtemperaturerangeisavailable.  
For specific speeds, packages and powers contact your sales office.  
Ordering Information for Flow-through Devices  
Old Flow-through Part  
New Combined Part  
70927S/L20  
709279S/L9  
70927S/L25  
709279S/L12  
70927S/L30  
709279S/L15  
3243 tbl 12  
IDT Clock Solution for IDT709279/69 Dual-Port  
Dual-Port I/O Specitications  
Clock Specifications  
Input Duty  
Cycle  
IDT  
PLL  
IDT  
Non-PLL  
IDT Dual-Port  
Part Number  
Input  
Capacitance  
Maximum  
Frequency Tolerance  
Jitter  
Voltage  
5
I/O  
Clock Device Clock Device  
Requirement  
49FCT805T  
FCT88915TT 49FCT806T  
74FCT807T  
709279/69  
TTL  
9pF  
40%  
100  
150ps  
3243 tbl 13  
6.1472  
IDT709279/69S/L  
Preliminary  
High-Speed 32/16K x 16 Synchronous Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
DatasheetDocumentHistory  
12/9/98:  
Initiateddatasheetdocumenthistory  
Convertedtonewformat  
Cosmeticandtypographicalcorrections  
Addedadditionalnotestopinconfigurations  
Pages13&14Updatedtimingwaveforms  
Page15AddedDepthandWidthExpansionsection  
Changeddrawingformat  
06/03/99:  
Page 3 Deleted note 6 for Table II  
Replaced IDT logo  
CombinedPipelined709279familyandFlow-through70927familyofferingsintoonedatasheet  
Changed±200mVinwaveformnotesto0mV  
11/10/99:  
03/31/00:  
Addedcorrespondingpartchartwithorderinginformation  
05/24/00:  
Page 1 Inserted diamond in copy  
Page4ChangedinformationinTruthTableII, Increasedstoragetemperatureparameter, clarifiedTA parameter  
Page5ChangedDCElectricalparameters–changedwordingfrom"Open"to"Disabled"  
Page 16 Fixed typeface in heading  
AddedIndustrialTemperatureRangesandremovedrelatednotes  
Pages 1, 16 and Page Header Removed Preliminary status  
Page 5 & 7 Removed Industrial Temperature Ranges for 15ns speed from DC and AC Electrical Characteristics  
Page16RemovedIndustrialTemperaturefrom15nsspeedinorderinginformation  
Consolidatedmultipledevicesintoonedatasheet  
08/24/01:  
06/21/04:  
Page 2 Added date revision to pin configuration  
Page 4 AddedJunctionTemperaturetoAbsoluteMaximumRatingsTable  
AddedAmbientTemperaturefootnote  
Page 5 & 6 Added 6ns & 7ns speed DC power numbers to the DC Electrical Characteristics Table  
Page 8 Added6ns& 7nsspeedACtimingnumberstotheACElectricalCharacteristicsTable  
Page 17 Added 6ns & 7ns speed grades to ordering information  
Added IDT Clock Solution Table  
Page 1 & 18 Replaced old logo with new TM logo  
CORPORATE HEADQUARTERS  
2975StenderWay  
Santa Clara, CA 95054  
for SALES:  
for Tech Support:  
831-754-4613  
DualPortHelp@idt.com  
800-345-7015 or 408-727-611 6  
fax: 408-492-8674  
www.idt.com  
The IDT logo is a registered trademark of Integrated Device Technology, Inc.  
18  
6.42  

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