IDT7164S25TD [IDT]

CMOS STATIC RAM 64K (8K x 8-BIT); CMOS静态RAM 64K （ 8K ×8位）


型号：	IDT7164S25TD
厂家：	INTEGRATED DEVICE TECHNOLOGY
描述：	CMOS STATIC RAM 64K (8K x 8-BIT) CMOS静态RAM 64K （ 8K ×8位）
文件：	总9页 (文件大小：108K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IDT7164S

IDT7164L

CMOS STATIC RAM

64K (8K x 8-BIT)

Integrated Device Technology, Inc.

FEATURES:

DESCRIPTION:

• High-speed address/chip select access time

— Military: 20/25/30/35/45/55/70/85ns (max.)

— Commercial: 15/20/25/35/70ns (max.)

• Low power consumption

• Battery backup operation — 2V data retention voltage

(L Version only)

• Produced with advanced CMOS high-performance

technology

• Inputs and outputs directly TTL-compatible

• Three-state outputs

The IDT7164 is a 65,536 bit high-speed static RAM orga-

nized as 8K x 8. It is fabricated using IDT’s high-performance,

high-reliability CMOS technology.

Address access times as fast as 15ns are available and the

circuit offers a reduced power standby mode. When CS1 goes

HIGH or CS2 goes LOW, the circuit will automatically go to,

and remain in, a low-power stand by mode. The low-power (L)

version also offers a battery backup data retention capability

at power supply levels as low as 2V.

All inputs and outputs of the IDT7164 are TTL-compatible

and operation is from a single 5V supply, simplifying system

designs. Fully static asynchronous circuitry is used, requiring

no clocks or refreshing for operation.

• Available in:

— 28-pin DIP and SOJ

• Military product compliant to MIL-STD-883, Class B

The IDT7164 is packaged in a 28-pin 300 mil DIP and SOJ;

and 28-pin 600 mil DIP.

Military grade product is manufactured in compliance with

the latest revision of MIL-STD-883, Class B, making it ideally

suited to military temperature applications demanding the

highest level of performance and reliability.

FUNCTIONAL BLOCK DIAGRAM

A₀

V_CC

GND

65,536 BIT

ADDRESS

DECODER

MEMORY ARRAY

A₁₂

I/O

I/O CONTROL

I/O 7

CS₁

CS₂

CONTROL

LOGIC

2967 drw 01

The IDT logo is a registered trademark of Integrated Device Technology, Inc.

MILITARY AND COMMERCIAL TEMPERATURE RANGES

MAY 1996

1996 Integrated Device Technology, Inc.

2967/8

For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.

6.1

IDT7164S/L

CMOS STATIC RAM 64K (8K x 8-BIT)

MILITARY AND COMMERCIAL TEMPERATURE RANGES

PIN CONFIGURATIONS

VCC

CS2

A11

A12

TRUTH TABLE^(1,2,3)

CS2

I/O

Function

WE CS

D28-1

D28-3

P28-1

P28-2

SO28-5

High-Z Deselected – Standby (ISB)

High-Z Deselected –Standby (ISB1)

22 OE

A10

CS1

I/O7

I/O6

I/O5

I/O4

I/O3

VHC VHC or

VLC

High-Z Deselected –Standby (ISB1)

High-Z Output Disabled

Data^OUTRead Data

I/O0

I/O1

I/O2

GND

Data^INWrite Data

NOTES:

2967 tbl 02

2967 drw 02

1. CS2 will power-down CS1, but CS1 will not power-down CS2.

2. H = VIH, L = VIL, X = don't care.

DIP/SOJ

TOP VIEW

3. VLC = 0.2V, VHC = VCC - 0.2V

PIN DESCRIPTIONS

Name

A0–A12

I/O0–I/O7

CS1

Description

Address

Data Input/Output

Chip Select

Write Enable

Output Enable

Ground

CS2

RECOMMENDED OPERATING

TEMPERATURE AND SUPPLY VOLTAGE

Grade

Temperature

–55°C to +125°C

0°C to +70°C

GND

VCC

GND

Military

5V ± 10%

VCC

Power

2967 tbl 01

Commercial

5V ± 10%

2967 tbl 04

ABSOLUTE MAXIMUM RATINGS⁽¹⁾

Symbol

Rating

Com’l.

Mil.

Unit

(2)

VTERM

Terminal Voltage –0.5 to +7.0 –0.5 to +7.0

with Respect

to GND

RECOMMENDED DC OPERATING

CONDITIONS

Operating

Temperature

0 to +70

–55 to +125 °C

TBIAS

TSTG

Temperature

Under Bias

–55 to +125 –65 to +135 °C

–55 to +125 –65 to +150 °C

Symbol

VCC

GND

VIH

Parameter

Min. Typ. Max. Unit

Supply Voltage

4.5

5.0

5.5

Storage

Temperature

Supply Voltage

Input HIGH Voltage

Input LOW Voltage

2.2

–0.5⁽¹⁾

— VCC + 0.5

0.8

Power Dissipation

1.0

VIL

—

IOUT

DC Output

Current

NOTE:

2967 tbl 05

1. VIL (min.) = –1.5V for pulse width less than 10ns, once per cycle.

NOTES:

2967 tbl 03

1. Stresses greater than those listed under ABSOLUTE MAXIMUM

RATINGS may cause permanent damage to the device. This is a stress

rating only and functional operation of the device at these or any other

conditions above those indicated in the operational sections of this

specification is not implied. Exposure to absolute maximum rating

conditions for extended periods may affect reliability.

2. VTERM must not exceed VCC + 0.5V.

6.1

IDT7164S/L

CMOS STATIC RAM 64K (8K x 8-BIT)

MILITARY AND COMMERCIAL TEMPERATURE RANGES

CAPACITANCE (TA = +25°C, f = 1.0MHz)

Symbol

Parameter⁽¹⁾

Input Capacitance

I/O Capacitance

Conditions

Max. Unit

CIN

VIN = 0V

CI/O

VOUT = 0V

NOTE:

2967 tbl 06

1. This parameter is determined by device characterization, but is not

production tested.

DC ELECTRICAL CHARACTERISTICS⁽¹⁾

(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)

7164S15

7164L15

7164S20

7164L20

7164S25

7164L25

7164S30

7164L30

Symbol

Parameter

Power Com’l. Mil. Com’l. Mil. Com’l.

Mil. Com’l. Mil.

Unit

ICC1

Operating Power Supply

110

—

100

110

—

100

Current, CS¹= VIL, CS2 = VIH,

Outputs Open, VCC = Max., f = 0⁽³⁾

100

180

—

100

180

100

180

—

ICC2

ISB

Dynamic Operating Current

CS¹= VIL, CS2 = VIH,

Outputs Open, VCC = Max., f = fMAX⁽³⁾

170

150

—

150

160

150

160

—

150

Standby Power Supply Current

(TTL Level), CS¹≥ VIH or CS2 ≤ VIL

VCC = Max., Outputs Open, f = fMAX⁽³⁾

—

ISB1

Full Standby Power Supply Current

(CMOS Level), f = 0⁽³⁾, VCC = Max.

1. CS1 ≥ VHC and CS2 ≥ VHC, or

2. CS²≤ VLC

0.2

—

0.2

—

DC ELECTRICAL CHARACTERISTICS⁽¹⁾(Continued)

(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)

7164S35

7164L35

7164S45

7164L45

7164S55

7164L55

7164S70⁽²⁾/85⁽⁴⁾

7164L70⁽²⁾/85⁽⁴⁾

Symbol

Parameter

Power Com’l. Mil. Com’l. Mil. Com’l. Mil.

Com’l. Mil.

Unit

ICC1

Operating Power Supply

100

—

100

—

100

Current, CS1 = VIL, CS2 = VIH,

Outputs Open, VCC = Max., f = 0⁽³⁾

—

ICC2

ISB

Dynamic Operating Current

CS1 = VIL, CS2 = VIH,

Outputs Open, VCC = Max., f = fMAX

150

160

150

160

(3)

130

140

—

130

—

125

130

120

Standby Power Supply Current

(TTL Level), CS1 ≥ VIH, or CS2 ≤ VIL

VCC = Max., Outputs Open, f = fMAX

(3)

—

ISB1

Full Standby Power Supply Current

(CMOS Level), f = 0⁽³⁾, VCC = Max.

1. CS1 ≥ VHC and CS2 ≥ VHC, or

2. CS2 ≤ VLC

0.2

—

0.2

NOTES:

2967 tbl 07

1. All values are maximum guaranteed values.

2. 70 ns available in both military and commercial devices.

3. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing.

4. Also available: 100ns military devices.

6.1

IDT7164S/L

CMOS STATIC RAM 64K (8K x 8-BIT)

MILITARY AND COMMERCIAL TEMPERATURE RANGES

DC ELECTRICAL CHARACTERISTICS

(VCC = 5.0V ± 10%)

IDT7164S

IDT7164L

Symbol

Parameter

Test Condition

VCC = Max.,

Min.

Max.

Min.

Max.

Unit

|ILI|

Input Leakage Current

MIL.

COM’L.

—

µA

VIN = GND to VCC

|ILO|

VOL

Output Leakage Current VCC = Max., CS1 = VIH,

VOUT = GND to VCC

MIL.

COM’L.

—

µA

Output Low Voltage

IOL = 8mA, VCC = Min.

IOL = 10mA, VCC = Min.

IOH = –4mA, VCC = Min.

0.4

0.5

—

0.4

0.5

—

VOH

Output High Voltage

2.4

2967 tbl 08

DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES

(L Version Only) (VLC = 0.2V, VHC = VCC - 0.2V)

Typ. ⁽¹⁾

VCC @

Max.

VCC @

Symbol

VDR

Parameter

Test Condition

Min.

2.0v

3.0V

2.0V

3.0V

Unit

VCC for Data Retention

Data Retention Current

—

2.0

—

ICCDR

MIL.

COM’L.

—

200

300

µA

(3)

tCDR

Chip Deselect to Data

Retention Time

1. CS1 ≥ VHC

CS2 ≥ VHC, or

—

(3)

|ILI|⁽³⁾

(2)

Operation Recovery Time

Input Leakage Current

2. CS2 ≤ VLC

tRC

—

µA

—

NOTES:

1. TA = +25°C.

2. tRC = Read Cycle Time.

2967 tbl 09

3. This parameter is guaranteed by device characterization, but is not production tested.

AC TEST CONDITIONS

Input Pulse Levels

GND to 3.0V

Input Rise/Fall Times

Input Timing Reference Levels

Output Reference Levels

AC Test Load

5ns

1.5V

See Figures 1 and 2

2967 tbl 10

480Ω

DATA OUT

255Ω

5pF*

30pF*

2967 drw 03

2967 drw 04

Figure 2. AC Test Load

(for tCLZ1, tCLZ2, tOLZ, tCHZ1, tCHZ2, tOHZ, tOW, and tWHZ)

Figure 1. AC Test Load

*Includes scope and jig capacitances

6.1

IDT7164S/L

CMOS STATIC RAM 64K (8K x 8-BIT)

MILITARY AND COMMERCIAL TEMPERATURE RANGES

AC ELECTRICAL CHARACTERISTICS (VCC = 5.0V ± 10%, All Temperature Ranges)

7164S15⁽¹⁾

7164S20

7164L20

7164S25

7164L25

7164S30⁽²⁾

7164L30

7164L15⁽¹⁾

Symbol

Parameter

Min. Max.

Min.

Max.

Min.

Max.

Min.

Max. Unit

Read Cycle

tRC

Read Cycle Time

Address Access Time

—

tAA

—

(3)

tACS1

tACS2

Chip Select-1 Access Tim

Chip Select-2 Access Time

(4)

tCLZ1,2

tOE

Chip Select-1, 2 to Output in Low-Z

Output Enable to Output Valid

Output Enable to Output in Low-Z

Chip Select-1, 2 to Output in High-Z

Output Disable to Output in High-Z

Output Hold from Address Change

Chip Select to Power Up Time

Chip Deselect to Power Down Time

—

(4)

tOLZ

—

(4)

tCHZ1,2

—

(4)

tOHZ

tOH

—

(4)

tPU

(4)

tPD

—

Write Cycle

tWC

Write Cycle Time

—

tCW1, 2

tAW

Chip Select to End-of-Write

Address Valid to End-of-Write

Address Set-up Time

tAS

tWP

Write Pulse Width

tWR1

tWR2

Write Recovery Time (CS1, WE)

Write Recovery Time (CS2)

Write Enable to Output in High-Z

Data to Write Time Overlap

Data Hold from Write Time (CS1, WE)

Data Hold from Write Time (CS2)

Output Active from End-of-Write

(4)

tWHZ

—

tDW

—

tDH1

tDH2

(4)

tOW

NOTES:

2967 tbl 11

1. 0° to +70°C temperature range only.

2. –55°C to +125°C temperature range only. Also available: 100ns military devices.

3. Both chip selects must be active for the device to be selected.

4. This parameter is guaranteed by device characterization, but is not production tested.

6.1

IDT7164S/L

CMOS STATIC RAM 64K (8K x 8-BIT)

MILITARY AND COMMERCIAL TEMPERATURE RANGES

AC ELECTRICAL CHARACTERISTICS (Continued) (VCC = 5.0V ± 10%, All Temperature Ranges)

7164S35

7164L35

7164S45⁽²⁾

7164S55⁽²⁾

7164S70/85⁽²⁾

7164L45⁽²⁾

7164L55⁽²⁾

7164L70/85⁽²⁾

Symbol

Parameter

Min. Max.

Min.

Max.

Min.

Max.

Min.

Max. Unit

Read Cycle

tRC

Read Cycle Time

Address Access Time

—

70/85

—

tAA

70/85

—

(3)

tACS1

tACS2

Chip Select-1 Access Time

Chip Select-2 Access Time

(4)

tCLZ1,2

tOE

Chip Select-1, 2 to Output in Low-Z

Output Enable to Output Valid

Output Enable to Output in Low-Z

Chip Select-1, 2 to Output in High-Z

Output Disable to Output in High-Z

Output Hold from Address Change

Chip Select to Power Up Time

Chip Deselect to Power Down Time

—

35/40

—

(4)

tOLZ

(4)

tCHZ1,2

—

30/35

—

(4)

tOHZ

tOH

(4)

tPU

—

(4)

tPD

—

70/85

Write Cycle

tWC

Write Cycle Time

—

70/85

—

tCW1, 2

tAW

Chip Select to End-of-Write

Address Valid to End-of-Write

Address Set-up Time

60/75

—

tAS

—

tWP

Write Pulse Width

60/75

—

tWR1

tWR2

Write Recovery Time (CS1, WE)

Write Recovery Time (CS2)

Write Enable to Output in High-Z

Data to Write Time Overlap

Data Hold from Write Time (CS1, WE)

Data Hold from Write Time (CS2)

Output Active from End-of-Write

—

(4)

tWHZ

—

30/35

—

tDW

30/35

tDH1

tDH2

—

(4)

tOW

—

NOTES:

2967 tbl 11

1. 0° to +70°C temperature range only.

2. –55°C to +125°C temperature range only. Also available: 100ns military devices.

3. Both chip selects must be active for the device to be selected.

4. This parameter is guaranteed by device characterization, but is not production tested.

6.1

IDT7164S/L

CMOS STATIC RAM 64K (8K x 8-BIT)

MILITARY AND COMMERCIAL TEMPERATURE RANGES

TIMING WAVEFORM OF READ CYCLE NO. 1⁽¹⁾

tRC

ADDRESS

tAA

tOH

tOE

(5)

tOLZ

CS2

tACS2

(5)

tCHZ2

tCLZ2

CS1

(5)

tACS1

(5)

tOHZ

(5)

tCLZ1

tCHZ1

DATA OUT

DATA VALID

2967 drw 05

TIMING WAVEFORM OF READ CYCLE NO. 2^{(1, 2, 4)}

tRC

ADDRESS

tAA

tOH

DATA OUT

DATA VALID

2967 drw 06

TIMING WAVEFORM OF READ CYCLE NO. 3^{(1, 3, 4)}

CS1

CS2

tACS2

(5)

tCHZ2

tCLZ2

tACS1

(5)

tCHZ1

(5)

tCLZ1

DATA OUT

DATA VALID

tPU

ICC

POWER

SUPPLY

CURRENT ISB

tPD

NOTES:

1. WE is HIGH for Read cycle.

2967 drw 07

2. Device is continuously selected, CS1 is LOW, CS2 is HIGH.

3. Address valid prior to or coincident with CS1 transition LOW and CS2 transition HIGH.

4. OE is LOW.

5. Transition is measured ±200mV from steady state.

6.1

IDT7164S/L

CMOS STATIC RAM 64K (8K x 8-BIT)

MILITARY AND COMMERCIAL TEMPERATURE RANGES

TIMING WAVEFORM OF WRITE CYCLE NO. 1 (

CONTROLLED TIMING)^{(1, 2, 6)}

tWC

ADDRESS

CS2

CS1

(3)

tWR1

tAW

tAS

DATA OUT

DATA IN

(6)

tWP

(4)

(7)

tOW

tDW

tDH1, 2

(7)

tWHZ

DATA VALID

2967 drw 08

TIMING WAVEFORM OF WRITE CYCLE NO. 2 (

CONTROLLED TIMING)^{(1, 2)}

tWC

ADDRESS

(3)

tAS

tWR2

CS2

CS1

tCW

tWR1

(5)

tAW

tDW

tDH1,2

DATA IN

DATA VALID

2967 drw 09

NOTES:

1. WE, CS1 or CS2 must be inactive during all address transitions.

2. A write occurs during the overlap of a LOW WE, a LOW CS1 and a HIGH CS2.

3. tWR1, 2 is measured from the earlier of CS1 or WE going HIGH or CS2 going LOW to the end of the write cycle.

4. During this period, I/O pins are in the output state so that the input signals must not be applied.

5. If the CS1 LOW transition or CS2 HIGH transition occurs simultaneously with or after the WELOW transition, the outputs remain in a high-impedance state.

6. OE is continuously HIGH. If OE is LOW during a WE controlled write cycle, the write pulse width must be the larger of tWP or (tWHZ +tDW) to allow the

I/O drivers to turn off and data to be placed on the bus for the required tDW. If OE is HIGH during a WE controlled write cycle, this requirement does not

apply and the minimum write pulse width is as short as the specified tWP.

7. Transition is measured ±200mV from steady state.

6.1

IDT7164S/L

CMOS STATIC RAM 64K (8K x 8-BIT)

MILITARY AND COMMERCIAL TEMPERATURE RANGES

LOW VCC DATA RETENTION WAVEFORM

DATA

RETENTION

MODE

4.5V

DR ≥ 2V

CDR

VIH

2967 drw 10

ORDERING INFORMATION

IDT

7164

XXX

Device

Type

Power

Speed

Package

Process/

Temperature

Range

Blank

Commercial (0°C to +70°C)

Military (–55°C to +125°C)

Compliant to MIL-STD-883, Class B

300 mil SOJ (SO28-5)

300 mil CERDIP (D28-3)

600 mil CERDIP (D28-1)

600 mil Plastic DIP (P28-1)

300 mil Plastic DIP (P28-2)

Commercial Only

Military Only

Speed in nanoseconds

Military Only

Standard Power

Low Power

2967 drw 11

6.1

IDT7164S25TD [IDT]

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