IDT71V2577S85PFI8
更新时间:2024-09-18 18:04:02
品牌:IDT
描述:Cache SRAM, 128KX36, 8.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100
IDT71V2577S85PFI8 概述
Cache SRAM, 128KX36, 8.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100 SRAM
IDT71V2577S85PFI8 规格参数
是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | QFP | 包装说明: | 14 X 20 MM, PLASTIC, TQFP-100 |
针数: | 100 | Reach Compliance Code: | not_compliant |
ECCN代码: | 3A991.B.2.A | HTS代码: | 8542.32.00.41 |
风险等级: | 5.88 | 最长访问时间: | 8.5 ns |
其他特性: | FLOW-THROUGH ARCHITECTURE | 最大时钟频率 (fCLK): | 86 MHz |
I/O 类型: | COMMON | JESD-30 代码: | R-PQFP-G100 |
JESD-609代码: | e0 | 长度: | 20 mm |
内存密度: | 4718592 bit | 内存集成电路类型: | CACHE SRAM |
内存宽度: | 36 | 湿度敏感等级: | 3 |
功能数量: | 1 | 端子数量: | 100 |
字数: | 131072 words | 字数代码: | 128000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 128KX36 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | LQFP | 封装等效代码: | QFP100,.63X.87 |
封装形状: | RECTANGULAR | 封装形式: | FLATPACK, LOW PROFILE |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | 240 |
电源: | 3.3 V | 认证状态: | Not Qualified |
座面最大高度: | 1.6 mm | 最大待机电流: | 0.035 A |
最小待机电流: | 3.14 V | 子类别: | SRAMs |
最大压摆率: | 0.19 mA | 最大供电电压 (Vsup): | 3.465 V |
最小供电电压 (Vsup): | 3.135 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Tin/Lead (Sn85Pb15) |
端子形式: | GULL WING | 端子节距: | 0.65 mm |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | 20 |
宽度: | 14 mm | Base Number Matches: | 1 |
IDT71V2577S85PFI8 数据手册
通过下载IDT71V2577S85PFI8数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载128K x 36, 256K x 18
IDT71V2577
IDT71V2579
3.3V Synchronous SRAMs
2.5V I/O, Flow-Through Outputs
Burst Counter, Single Cycle Deselect
Description
Features
◆
The IDT71V2577/79 are high-speed SRAMs organized as
128Kx36/256Kx18.TheIDT71V2577/79SRAMs containwrite,data,
address andcontrolregisters.Therearenoregisters inthedataoutput
path (flow-through architecture). Internal logic allows the SRAM to
generateaself-timedwritebaseduponadecisionwhichcanbeleftuntil
128K x 36, 256K x 18 memory configurations
◆
Supports fast access times:
Commercial:
– 7.5ns up to 117MHz clock frequency
CommercialandIndustrial:
– 8.0ns up to 100MHz clock frequency
– 8.5ns up to 87MHz clock frequency
LBO input selects interleaved or linear burst mode
Self-timedwritecyclewithglobalwritecontrol(GW),bytewrite
enable (BWE), and byte writes (BWx)
3.3V core power supply
Power down controlled by ZZ input
2.5V I/O
theendofthewritecycle.
Theburstmodefeatureoffersthehighestlevelofperformancetothe
systemdesigner,astheIDT71V2577/79canprovidefourcyclesofdata
fora single address presentedtothe SRAM. Aninternalburstaddress
counteracceptsthefirstcycleaddressfromtheprocessor,initiatingthe
accesssequence.Thefirstcycleofoutputdatawillflow-throughfromthe
arrayafteraclock-to-dataaccesstimedelayfromtherisingclockedgeof
the same cycle. If burst mode operation is selected (ADV=LOW), the
subsequentthreecyclesofoutputdatawillbeavailabletotheuseronthe
next three rising clock edges. The order of these three addresses are
definedbytheinternalburstcounterandtheLBOinputpin.
◆
◆
◆
◆
◆
◆
Packaged in a JEDEC Standard 100-pin plastic thin quad
flatpack(TQFP),119ballgridarray(BGA)and165finepitchball
grid array (fBGA)
The IDT71V2577/79 SRAMs utilize IDT’s latest high-performance
CMOSprocessandarepackagedinaJEDECstandard14mmx20mm
100-pinthinplasticquadflatpack(TQFP)aswellasa119ballgridarray
(BGA) and a 165 fine pitch ball grid array (fBGA).
PinDescriptionSummary
0
17
A -A
Address Inputs
Input
Input
Input
Input
Input
Input
Input
Synchronous
Synchronous
Synchronous
Asynchronous
Synchronous
Synchronous
Synchronous
Chip Enable
CE
0
1
CS , CS
Chip Selects
Output Enable
OE
Global Write Enable
Byte Write Enable
Individual Byte Write Selects
GW
BWE
(1)
1
2
3
4
BW , BW , BW , BW
CLK
ADV
ADSC
ADSP
LBO
Clock
Input
Input
Input
Input
Input
Input
I/O
N/A
Synchronous
Synchronous
Synchronous
DC
Burst Address Advance
Address Status (Cache Controller)
Address Status (Processor)
Linear / Interleaved Burst Order
Sleep Mode
ZZ
Asynchronous
Synchronous
N/A
0
31
P1
P4
I/O -I/O , I/O -I/O
Data Input / Output
DD DDQ
V , V
Core Power, I/O Power
Ground
Supply
Supply
SS
V
N/A
4877 tbl 01
NOTE:
1. BW3 and BW4 are not applicable for the IDT71V2579.
OCTOBER 2000
1
©2000ntegratedDeviceTechnology,Inc.
DSC-4877/06
IDT71V2577, IDT71V2579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
PinDefinition(1)
Symbol
Pin Function
I/O
Active
Description
0
17
A -A
Address Inputs
I
N/A
Synchronous Address inputs. The address register is triggered by a combi-nation of the rising
edge of CLK and ADSC Low or ADSP Low and CE Low.
Address Status
(Cache Controller)
I
I
I
LOW
LOW
LOW
Synchronous Address Status from Cache Controller. ADSC is an active LOW input that is
ADSC
ADSP
ADV
used to load the address registers with new addresses.
Address Status
(Processor)
Synchronous Address Status from Processor. ADSP is an active LOW input that is used to
load the address registers with new addresses. ADSP is gated by CE.
Burst Address
Advance
Synchronous Address Advance. ADV is an active LOW input that is used to advance the
internal burst counter, controlling burst access after the initial address is loaded. When the
input is HIGH the burst counter is not incremented; that is, there is no address advance.
1
4
Byte Write Enable
I
LOW
Synchronous byte write enable gates the byte write inputs BW -BW . If BWE is LOW at the
rising edge of CLK then BWx inputs are passed to the next stage in the circuit. If BWE is
HIGH then the byte write inputs are blocked and only GW can initiate a write cycle.
BWE
1
0-7
P1
2
8-15
P2
Individual Byte
Write Enables
I
I
I
LOW
LOW
N/A
Synchronous byte write enables. BW controls I/O , I/O , BW controls I/O , I/O , etc.
1
4
BW -BW
Any active byte write causes all outputs to be disabled.
0
1
Chip Enable
Synchronous chip enable. CE is used with CS and CS to enable the IDT71V2577/79. CE
CE
also gates ADSP.
CLK
Clock
This is the clock input. All timing references for the device are made with respect to this
input.
0
0
1
CS
Chip Select 0
Chip Select 1
I
I
I
HIGH Synchronous active HIGH chip select. CS is used with CE and CS to enable the chip.
1
0
LOW
LOW
Synchronous active LOW chip select. CS is used with CE and CS to enable the chip.
1
CS
Global Write
Enable
Synchronous global write enable. This input will write all four 9-bit data bytes when LOW on
the rising edge of CLK. GW supersedes individual byte write enables.
GW
0
31
I/O -I/O
Data Input/Output
I/O
I
N/A
Synchronous data input/output (I/O) pins. The data input path is registered, triggered by the
rising edge of CLK. The data output path is flow-through (no output register).
P1
P4
I/O -I/O
Linear Burst Order
LOW
Asynchronous burst order selection input. When LBO is HIGH, the inter-leaved burst
sequence is selected. When LBO is LOW the Linear burst sequence is selected. LBO is a
static input and must not change state while the device is operating.
LBO
Output Enable
I
LOW
Asynchronous output enable. When OE is LOW the data output drivers are enabled on the
I/O pins if the chip is also selected. When OE is HIGH the I/O pins are in a high-impedance
state.
OE
DD
V
Power Supply
Power Supply
Ground
N/A
N/A
N/A
N/A
1
N/A
N/A
3.3V core power supply.
DDQ
V
2.5V I/O Supply.
SS
V
N/A
Ground.
NC
ZZ
No Connect
Sleep Mode
N/A
NC pins are not electrically connected to the device.
HIGH
Asynchronous sleep mode input. ZZ HIGH will gate the CLK internally and power down the
IDT71V2577/79 to its lowest power consumption level. Data retention is guaranteed in
Sleep Mode.
4877 tbl 02
NOTE:
1. All synchronous inputs must meet specified setup and hold times with respect to CLK.
6.42
2
IDT71V2577, IDT71V2579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
FunctionalBlockDiagram
LBO
ADV
CEN
INTERNAL
ADDRESS
128K x 36/
256K x 18-
BIT
MEMORY
ARRAY
CLK
2
Burst
Logic
17/18
Binary
Counter
ADSC
A0*
A1*
Q0
Q1
CLR
ADSP
2
CLK EN
A0,A1
A2 - A17
ADDRESS
REGISTER
A0 - A16/17
GW
36/18
36/18
17/18
BWE
Byte 1
Write Register
Byte 1
Write Driver
BW1
BW2
9
9
Byte 2
Write Register
Byte 2
Write Driver
Byte 3
Write Register
Byte 3
Write Driver
3
BW
9
9
Byte 4
Write Register
Byte 4
Write Driver
BW4
CE
Q
D
CS0
CS1
Enable
DATA INPUT
REGISTER
Register
CLK EN
ZZ
Powerdown
OE
OUTPUT
BUFFER
OE
,
36/18
I/O0 - I/O31
I/OP1 - I/OP4
4877 drw 01
6.42
3
IDT71V2577, IDT71V2579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
AbsoluteMaximumRatings(1)
RecommendedOperating
TemperatureandSupplyVoltage
Commerical &
Industrial Values
Symbol
Rating
Unit
Temperature(1)
0°C to +70°C
-40°C to +85°C
V
V
SS
DD
DDQ
V
Grade
(2)
TERM
V
Terminal Voltage with
Respect to GND
-0.5 to +4.6
V
Commercial
Industrial
0V
0V
3.3V±5%
3.3V±5%
2.5V±5%
2.5V±5%
(3,6)
(4,6)
(5,6)
TERM
DD
V
Terminal Voltage with
Respect to GND
-0.5 to V
V
V
4877 tbl 04
NOTES:
1. TA is the “instant on” case temperature.
TERM
V
DD
Terminal Voltage with
Respect to GND
-0.5 to V +0.5
TERM
V
DDQ
Terminal Voltage with
Respect to GND
-0.5 to V +0.5
V
RecommendedDCOperating
Conditions
Commercial
Operating Temperature
-0 to +70
-40 to +85
-55 to +125
-55 to +125
oC
oC
oC
oC
W
Symbol
VDD
VDDQ
VSS
Parameter
Core Supply Voltage
I/O Supply Voltage
Supply Voltage
Min.
3.135
2.375
0
Typ.
Max.
Unit
V
(7)
A
T
3.3
3.465
2.625
0
Industrial
Operating Temperature
2.5
V
BIAS
T
Temperature
Under Bias
0
V
____
VIH
Input High Voltage - Inputs
Input High Voltage - I/O
Input Low Voltage
1.7
VDD + 0.3
V
STG
T
Storage
(1)
____
____
VIH
1.7
VDDQ + 0.3
V
Temperature
(2)
VIL
-0.3
0.7
V
T
P
Power Dissipation
DC Output Current
2.0
50
4877 tbl 05
NOTES:
OUT
I
mA
1. VIH (max) = VDDQ + 1.0V for pulse width less than tCYC/2, once per cycle.
2. VIL (min) = -1.0V for pulse width less than tCYC/2, once per cycle.
4877 tbl 03
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VDD terminals only.
3. VDDQ terminals only.
4. Input terminals only.
5. I/O terminals only.
6. This is a steady-state DC parameter that applies after the power supplies have
ramped up. Power supply sequencing is not necessary; however, the voltage
on any input or I/O pin cannot exceed VDDQ during power supply ramp up.
7. TA is the “instant on” case temperature.
100PinTQFPCapacitance
(TA = +25°C, f = 1.0MHz)
119BGACapacitance
(TA = +25°C, f = 1.0MHz)
Symbol
Parameter(1)
Input Capacitance
I/O Capacitance
Conditions
VIN = 3dV
VOUT = 3dV
Max. Unit
Symbol
Parameter(1)
Input Capacitance
I/O Capacitance
Conditions
VIN = 3dV
VOUT = 3dV
Max. Unit
CIN
7
7
pF
CIN
5
7
pF
CI/O
pF
CI/O
pF
4877 tbl 07a
4877 tbl 07
165fBGACapacitance
(TA = +25°C, f = 1.0MHz)
Symbol
Parameter(1)
Input Capacitance
I/O Capacitance
Conditions
VIN = 3dV
VOUT = 3dV
Max. Unit
CIN
TBD
TBD
pF
CI/O
pF
4877 tbl 07b
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
6.42
4
IDT71V2577, IDT71V2579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Pin Configuration 128K x 36
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
79
78
77
I/OP2
I/O15
I/O14
VDDQ
VSS
I/O13
I/O12
I/O11
I/O10
VSS
VDDQ
I/O9
I/O8
VSS
NC
I/OP3
2
I/O16
I/O17
VDDQ
VSS
I/O18
I/O19
I/O20
I/O21
VSS
3
4
5
76
75
74
73
6
7
8
9
72
71
70
69
68
67
66
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
VDDQ
I/O22
I/O23
(1)
VSS
VDD
NC
VSS
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
VDD
ZZ(3)
I/O7
I/O6
VDDQ
VSS
I/O24
I/O25
VDDQ
VSS
I/O26
I/O27
I/O28
I/O29
VSS
VDDQ
I/O30
I/O31
I/OP4
I/O5
I/O4
I/O3
I/O2
VSS
VDDQ
I/O1
I/O0
I/OP1
,
31
33 34 35 36
38 39 40 41 42 43 44 45 46 47 48 49 50
37
32
4877 drw 02a
100TQFP
Top View
NOTES:
1. Pin 14 does not have to be directly connected to VSS as long as the input voltage is < VIL.
2. Pins 38 and 39 can be either NC or connected to VSS.
3. Pin 64 can be left unconnected and the device will always remain in active mode.
6.42
5
IDT71V2577, IDT71V2579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Pin Configuration 256K x 18
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
79
A10
NC
NC
NC
NC
NC
VDDQ
VSS
NC
NC
I/O8
I/O9
VSS
2
3
78
77
4
VDDQ
VSS
NC
I/OP1
I/O7
I/O6
VSS
VDDQ
I/O5
I/O4
VSS
NC
VDD
ZZ(3)
I/O3
I/O2
VDDQ
VSS
5
76
75
74
73
6
7
8
9
72
71
70
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
VDDQ
69
68
67
66
I/O10
I/O11
(1)
VSS
VDD
NC
VSS
65
64
63
62
61
60
59
58
57
56
55
54
53
I/O12
I/O13
VDDQ
VSS
I/O14
I/O15
I/OP2
NC
VSS
VDDQ
NC
NC
I/O1
I/O0
NC
NC
VSS
VDDQ
NC
NC
NC
,
52
51
NC
31
33 34 35 36
38 39 40 41 42 43 44 45 46 47 48 49 50
37
32
4877 drw 02b
100TQFP
Top View
NOTES:
1. Pin 14 does not have to be directly connected to VSS as long as the input voltage is < VIL.
2. Pins 38 and 39 can be either NC or connected to VSS.
3. Pin 64 can be left unconnected and the device will always remain in active mode.
6.42
6
IDT71V2577, IDT71V2579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Pin Configuration 128K x 36, 119 BGA
1
2
3
4
5
6
7
DDQ
6
4
8
16
DDQ
V
V
A
A
A
A
A
A
A
A
B
C
D
E
F
ADSP
ADSC
3
2
9
1
CS
NC
NC
CS
NC
NC
0
7
A
DD
V
12
15
A
A
16
I/O
P3
I/O
SS
SS
SS
SS
SS
SS
P2
I/O
15
I/O
V
V
V
NC
CE
V
V
V
17
I/O
18
I/O
13
I/O
14
I/O
DDQ
20
19
I/O
12
I/O
DDQ
V
V
OE
21
I/O
3
2
BW
11
I/O
10
I/O
I/O
G
H
J
BW
ADV
GW
22
I/O
23
I/O
SS
SS
9
I/O
8
I/O
V
V
DDQ
V
DD
DD
V
DD
DDQ
7
V
NC
NC
V
V
24
I/O
26
I/O
SS
V
SS
V
6
I/O
CLK
I/O
K
L
(2)
25
I/O
27
I/O
4
1
BW
4
I/O
5
I/O
NC
BW
DDQ
28
SS
SS
SS
SS
SS
SS
SS
3
DDQ
1
V
I/O
V
V
V
V
V
V
V
I/O
V
M
N
P
R
T
BWE
29
I/O
30
I/O
1
A
2
I/O
I/O
31
P4
I/O
0
A
0
I/O
P1
I/O
NC
NC
I/O
NC
5
DD
11
13
A
A
V
LBO
(3)
10
A
14
A
,
NC
DNU
A
NC
ZZ
(4)
(4)
(4)
(2,4)
(4)
DDQ
V
DNU
DDQ
V
DNU
DNU
DNU
U
4877 drw 02c
Top View
Pin Configuration 256K x 18, 119 BGA
1
2
3
4
5
6
7
DDQ
6
4
8
16
A
DDQ
V
A
B
C
D
E
F
V
A
A
A
A
A
A
ADSP
ADSC
3
2
9
1
CS
NC
NC
CS
NC
NC
NC
0
7
DD
V
13
17
A
A
A
8
I/O
SS
SS
SS
2
SS
SS
SS
SS
SS
7
NC
V
V
V
NC
CE
V
V
V
V
V
I/O
NC
9
6
I/O
NC
I/O
NC
DDQ
V
5
DDQ
V
I/O
NC
OE
10
I/O
4
G
H
J
NC
I/O
NC
BW
ADV
GW
11
I/O
SS
3
I/O
NC
V
DDQ
V
DD
12
DD
V
DD
DDQ
V
V
NC
NC
V
SS
V
SS
V
2
K
L
NC
I/O
NC
CLK
NC
I/O
NC
(2)
SS
V
13
I/O
1
BW
1
I/O
NC
DDQ
15
14
SS
SS
SS
SS
SS
SS
DDQ
V
V
I/O
NC
V
V
V
V
V
NC
M
N
P
R
T
BWE
1
A
0
I/O
I/O
NC
P2
I/O
0
A
P1
I/O
NC
V
NC
5
DD
V
SS
14
12
11
NC
NC
DDQ
A
V
A
NC
LBO
(3)
10
15
A
ZZ
A
NC
A
A
(4)
(4)
(2,4)
(4)
(4)
,
DDQ
V
V
DNU
DNU
DNU
DNU
DNU
U
4877 drw 02d
NOTES:
Top View
1. R5 does not have to be directly connected to VSS as long as the input voltage is < VIL.
2. L4 and U4 can be either NC or connected to VSS.
3. T7 can be left unconnected and the device will always remain in active mode.
4. DNU = Do not use U2, U3, U4, U5 and U6 are reserved for respective JTAG pins: TDI, TDO, TMS, TCK and TRST on future revisions. Within the current
version these pins are not connected.
6.42
7
IDT71V2577, IDT71V2579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Pin Configuration 128K x 36, 165 fBGA
1
2
3
4
5
6
7
8
9
10
A8
11
(4)
A
B
C
D
E
F
NC
A7
NC
CE1
BW3
BW4
VSS
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VSS
A2
BW2
BW1
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
CS1
CLK
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
BWE
GW
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
ADSC
OE
ADV
(4)
NC
A6
CS0
A9
NC
ADSP
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
NC
I/OP3
I/O17
I/O19
I/O21
I/O23
VSS(1)
I/O25
I/O27
I/O29
I/O31
I/OP4
NC
NC
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
NC
VSS
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VSS
A10
NC
I/OP2
I/O14
I/O12
I/O10
I/O8
I/O16
I/O18
I/O20
I/O22
I/O15
I/O13
I/O11
I/O9
NC
G
H
J
(2)
(3)
NC
ZZ
I/O24
I/O26
I/O28
I/O30
NC
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
A5
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
A13
I/O7
I/O5
I/O3
I/O1
NC
I/O6
I/O4
I/O2
I/O0
I/OP1
K
L
M
N
P
(5)
(4)
(2)
DNU
NC
NC
(4)
(5)
(5)
(4)
NC
DNU
A1
A0
DNU
A14
A15
NC
(4)
(5)
(5)
R
NC
A4
A3
DNU
DNU
A11
A12
A16
LBO
4877 tbl 17
Pin Configuration 256K x 18, 165 fBGA
1
2
3
4
5
6
7
8
9
10
A8
11
(4)
A
B
C
D
E
F
NC
NC
NC
NC
NC
NC
NC
A7
NC
A10
CE
BW2
NC
CS1
CLK
VSS
VSS
VSS
VSS
VSS
BWE
GW
VSS
VSS
VSS
VSS
VSS
ADSC
OE
ADV
(4)
A6
CS0
A9
NC
BW1
VSS
VSS
VSS
VSS
VSS
ADSP
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
NC
NC
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
NC
VSS
VDD
VDD
VDD
VDD
VSS
VDD
VDD
VDD
VDD
NC
NC
NC
NC
NC
NC
I/O3
I/OP1
I/O7
I/O6
I/O5
I/O4
I/O8
I/O9
I/O10
I/O11
G
H
J
(1)
(2)
(3)
V
NC
V
DD
V
SS
V
SS
V
SS
V
DD
ZZ
SS
I/O12
NC
NC
NC
NC
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
NC
NC
NC
NC
K
L
M
N
P
I/O
13
V
V
DD
V
SS
V
SS
V
SS
V
DD
V
I/O
2
DDQ
DDQ
I/O14
I/O15
I/OP2
NC
VDDQ
VDDQ
VDDQ
A5
VDD
VDD
VSS
A2
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VSS
A11
VDDQ
VDDQ
VDDQ
A14
I/O1
I/O0
NC
(5)
(4)
(2)
DNU
NC
NC
(4)
(5)
(5)
(4)
NC
DNU
A1
DNU
A15
NC
(4)
(5)
(5)
R
NC
A
4
A
3
DNU
A
0
DNU
A
12
A
13
A
16
A
17
LBO
4877 tbl 17a
NOTES:
1. H1 does not have to be directly VSS as long as input voltage is < VIL.
2. H2 and N7 can be either NC or connected to VSS.
3. H11 can be left unconnected and the device will always remain in active mode.
4. Pins P11, N6, B11, A1, R2 and P2 are reserved for 9M, 18M, 36M, 72M, 144M and 288M respectively.
5. DNU = Do not use; Pins P5, P7, R5, R7 and N5 are reserved for respective JTAG pins: TDI, TDO, TMS, TCK and TRST on future revisions. Within the
current version these pins are not connected.
6.42
8
IDT71V2577, IDT71V2579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VDD = 3.3V ± 5%)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
___
|ILI|
Input Leakage Current
VDD = Max., VIN = 0V to VDD
5
µA
(1)
___
___
___
ZZ and LBO Input Leakage Current
Output Leakage Current
Output Low Voltage
LI
DD
IN
DD
|I |
V
= Max., V = 0V to V
30
5
µA
µA
V
|ILO|
VOUT = 0V to VDDQ, Device Deselected
IOL = +6mA, VDD = Min.
VOL
0.4
___
OH
V
OH
I
DD
Output High Voltage
= -6mA, V = Min.
2.0
V
4877 tbl 08
NOTE:
1. The LBO pin will be internally pulled to VDD if it is not actively driven in the application and the ZZ pin will be internally pulled to VSS if not actively driven.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range(1)
7.5ns
8ns
8.5ns
Com'l
Symbol
Parameter
Test Conditions
Com'l Only Com'l
Ind
Ind
Unit
Operating Power Supply Current
Device Selected, Outputs Open, VDD = Max.,
VDDQ = Max., VIN > VIH or < VIL, f = fMAX
255
30
200
30
210
180
190
mA
IDD
(2)
ISB1
CMOS Standby Power Supply
Current
Device Deselected, Outputs Open, VDD = Max.,
VDDQ = Max., VIN > VHD or < VLD, f = 0(2,3)
35
95
35
30
35
90
35
mA
mA
SB2
I
DD
Clock Running Power Supply
Current
Device Deselected, Outputs Open, V = Max.,
90
85
80
(2,3)
VDDQ = Max., VIN > VHD or < VLD, f = fMAX
IZZ
Full Sleep Mode Supply Current
ZZ > VHD, VDD = Max.
30
30
30
mA
4877 tbl 09
NOTES:
1. All values are maximum guaranteed values.
2. At f = fMAX, inputs are cycling at the maximum frequency of read cycles of 1/tCYC while ADSC = LOW; f=0 means no input lines are changing.
3. For I/Os VHD = VDDQ - 0.2V, VLD = 0.2V. For other inputs VHD = VDD - 0.2V, VLD = 0.2V.
AC Test Conditions
AC Test Load
V
DDQ/2
(VDDQ = 2.5V)
50
Ω
Input Pulse Levels
0 to 2.5V
2ns
I/O
0 Ω
Z = 50
Input Rise/Fall Times
,
Input Timing Reference Levels
Output Timing Reference Levels
AC Test Load
(VDDQ/2)
(VDDQ/2)
See Figure 1
4877d03
Figure 1. AC Test Load
6
5
4
4877 tbl 10
3
∆tCD
(Typical, ns)
2
1
,
20 30 50
80 100
Capacitance (pF)
200
4877d05
Figure 2. Lumped Capacitive Load, Typical Derating
6.42
9
IDT71V2577, IDT71V2579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
SynchronousTruthTable(1,3)
CE
CS
1
ADSP ADSC ADV
GW
BWE BW
x
OE(2)
Operation
Address
CS
0
CLK
I/O
Used
Deselected Cycle, Power Down
Deselected Cycle, Power Down
Deselected Cycle, Power Down
Deselected Cycle, Power Down
Deselected Cycle, Power Down
Read Cycle, Begin Burst
None
None
H
L
X
X
L
X
H
X
H
X
L
X
L
L
X
X
L
X
X
X
X
X
X
X
X
X
X
X
X
L
X
X
X
X
X
X
X
H
H
H
H
L
X
X
X
X
X
X
X
H
L
X
X
X
X
X
X
X
X
H
H
L
X
X
X
X
X
L
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
HI-Z
HI-Z
HI-Z
HI-Z
HI-Z
None
L
L
None
L
X
L
X
X
L
None
L
L
External
External
External
External
External
External
External
Next
L
H
H
H
H
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
D
OUT
Read Cycle, Begin Burst
L
L
L
H
L
HI-Z
Read Cycle, Begin Burst
L
L
H
H
H
H
H
H
H
H
H
X
X
X
X
H
H
X
X
H
H
H
H
X
X
X
X
H
H
X
X
D
OUT
Read Cycle, Begin Burst
L
L
L
L
D
OUT
Read Cycle, Begin Burst
L
L
L
L
H
X
X
L
HI-Z
Write Cycle, Begin Burst
L
L
L
L
D
IN
IN
OUT
HI-Z
Write Cycle, Begin Burst
L
L
L
X
H
H
X
X
H
H
X
X
L
X
X
X
H
H
X
X
H
H
L
D
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Write Cycle, Continue Burst
Write Cycle, Continue Burst
Write Cycle, Continue Burst
Write Cycle, Continue Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Write Cycle, Suspend Burst
Write Cycle, Suspend Burst
Write Cycle, Suspend Burst
Write Cycle, Suspend Burst
X
X
X
X
H
H
H
H
X
X
H
H
X
X
X
X
H
H
H
H
X
X
H
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
D
Next
L
H
L
Next
L
D
OUT
Next
L
H
L
HI-Z
Next
L
D
OUT
Next
L
H
L
HI-Z
Next
L
D
OUT
Next
L
H
X
X
X
X
L
HI-Z
Next
L
D
IN
IN
IN
IN
OUT
HI-Z
Next
L
X
L
X
L
D
Next
L
H
L
D
Next
L
X
H
H
X
X
H
H
X
X
L
X
X
X
H
H
X
X
H
H
L
D
Current
Current
Current
Current
Current
Current
Current
Current
Current
Current
Current
Current
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
D
H
L
D
OUT
H
L
HI-Z
D
OUT
H
L
HI-Z
D
OUT
H
X
X
X
X
HI-Z
D
IN
IN
IN
IN
4877 tbl 11
X
L
X
L
D
H
L
D
X
X
D
NOTES:
1. L = VIL, H = VIH, X = Don’t Care.
2. OE is an asynchronous input.
3. ZZ = low for this table.
6.42
10
IDT71V2577, IDT71V2579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Synchronous Write Function Truth Table(1, 2)
GW
H
H
L
BWE
H
L
BW1
BW2
X
BW3
X
BW4
X
Operation
Read
X
Read
H
H
H
H
Write all Bytes
Write all Bytes
Write Byte 1(3)
Write Byte 2(3)
Write Byte 3(3)
Write Byte 4(3)
X
L
X
X
X
X
H
H
H
H
H
L
L
L
L
L
L
H
H
H
L
H
L
H
H
L
H
H
L
H
L
H
H
H
L
4877 tbl 12
NOTES:
1. L = VIL, H = VIH, X = Don’t Care.
2. BW3 and BW4 are not applicable for the IDT71V2579.
3. Multiple bytes may be selected during the same cycle.
AsynchronousTruthTable(1)
Operation(2)
OE
ZZ
I/O Status
Power
Read
L
H
X
X
X
L
L
L
L
H
Data Out
High-Z
Active
Active
Read
Write
High-Z – Data In
High-Z
Active
Deselected
Sleep Mode
Standby
Sleep
High-Z
4877 tbl 13
NOTES:
1. L = VIL, H = VIH, X = Don’t Care.
2. Synchronous function pins must be biased appropriately to satisfy operation requirements.
InterleavedBurstSequenceTable(LBO=VDD)
Sequence 1
Sequence 2
Sequence 3
Sequence 4
A1
A0
0
A1
A0
1
A1
1
A0
0
A1
A0
1
First Address
0
0
1
1
0
0
1
1
1
1
0
0
Second Address
Third Address
1
0
1
1
0
0
1
0
0
1
Fourth Address(1)
1
0
0
1
0
4877 tbl 14
NOTE:
1. Upon completion of the Burst sequence the counter wraps around to its initial state.
LinearBurstSequenceTable(LBO=VSS)
Sequence 1
Sequence 2
Sequence 3
Sequence 4
A1
0
A0
0
A1
0
A0
1
A1
1
A0
0
A1
1
A0
1
First Address
Second Address
Third Address
0
1
1
0
1
1
0
0
1
0
1
1
0
0
0
1
Fourth Address(1)
1
1
0
0
0
1
1
0
4877 tbl 15
NOTE:
1. Upon completion of the Burst sequence the counter wraps around to its initial state.
6.42
11
IDT71V2577, IDT71V2579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
AC Electrical Characteristics
(VDD = 3.3V ±5%, Commercial and Industrial Temperature Ranges)
7.5ns(5)
8ns
8.5ns
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max. Unit
Clock Parameter
____
____
____
____
____
____
tCYC
Clock Cycle Time
8.5
3
10
4
11.5
4.5
ns
ns
ns
(1)
CH
Clock High Pulse Width
Clock Low Pulse Width
t
____
____
____
(1)
3
4
4.5
tCL
Output Parameters
____
____
____
CD
t
Clock High to Valid Data
7.5
8
8.5
ns
ns
ns
____
____
____
tCDC
Clock High to Data Change
Clock High to Output Active
Clock High to Data High-Z
Output Enable Access Time
Output Enable Low to Output Active
2
0
2
0
2
0
____
____
____
(2)
tCLZ
(2)
2
3.5
2
3.5
2
3.5
ns
ns
ns
ns
tCHZ
____
____
____
tOE
3.5
3.5
3.5
____
____
____
(2)
0
0
0
tOLZ
____
____
____
(2)
OHZ
Output Enable High to Output High-Z
3.5
3.5
3.5
t
Set Up Times
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
tSA
Address Setup Time
1.5
1.5
1.5
1.5
1.5
1.5
2
2
2
2
2
2
2
2
2
2
2
2
ns
ns
ns
ns
ns
ns
SS
t
Address Status Setup Time
Data In Setup Time
SD
t
SW
t
Write Setup Time
tSAV
tSC
Address Advance Setup Time
Chip Enable/Select Setup Time
Hold Times
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
tHA
tHS
Address Hold Time
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
ns
ns
ns
ns
ns
ns
Address Status Hold Time
Data In Hold Time
tHD
tHW
tHAV
tHC
Write Hold Time
Address Advance Hold Time
Chip Enable/Select Hold Time
Sleep Mode and Configuration Parameters
____
____
____
____
____
____
____
____
____
tZZPW
tZZR(3)
tCFG (4)
ZZ Pulse Width
100
100
34
100
100
40
100
100
50
ns
ns
ZZ Recovery Time
Configuration Set-up Time
ns
4877 tbl 16
NOTES:
1. Measured as HIGH above VIH and LOW below VIL.
2. Transition is measured ±200mV from steady-state.
3. Device must be deselected when powered-up from sleep mode.
4. tCFG is the minimum time required to configure the device based on the LBO input. LBO is a static input and must not change during normal operation.
5. Commercial temperature range only.
6.42
12
IDT71V2577, IDT71V2579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Timing Waveform of Flow-Through Read Cycle(1,2)
,
6.42
13
IDT71V2577, IDT71V2579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Timing Waveform of Combined Flow-Through Read and Write Cycles(1,2,3)
,
6.42
14
IDT71V2577, IDT71V2579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Timing Waveform of Write Cycle No. 1 - GW Controlled(1,2,3)
,
6.42
15
IDT71V2577, IDT71V2579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Timing Waveform of Write Cycle No. 2 - Byte Controlled(1,2,3)
,
6.42
16
IDT71V2577, IDT71V2579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Timing Waveform of Sleep (ZZ) and Power-Down Modes(1,2,3)
,
6.42
17
IDT71V2577, IDT71V2579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Non-Burst Read Cycle Timing Waveform
CLK
ADSP
ADSC
Av
Aw
Ax
Ay
Az
ADDRESS
GW, BWE, BWx
CE, CS1
CS0
OE
(Av)
(Aw)
(Ax)
(Ay)
DATAOUT
,
4877 drw 10
NOTES:
1. ZZ input is LOW, ADV is HIGH and LBO is Don't Care for this cycle.
2. (Ax) represents the data for address Ax, etc.
3. For read cycles, ADSP and ADSC function identically and are therefore interchangable.
Non-Burst Write Cycle Timing Waveform
CLK
ADSP
ADSC
Av
Aw
Ax
Ay
Az
ADDRESS
GW
CE, CS1
CS0
(Av)
(Aw)
(Ax)
(Ay)
(Az)
DATAIN
,
4877 drw 11
NOTES:
1. ZZ input is LOW, ADV and OE are HIGH, and LBO is Don't Care for this cycle.
2. (Ax) represents the data for address Ax, etc.
3. Although only GW writes are shown, the functionality of BWE and BWx together is the same as GW.
4. For write cycles, ADSP and ADSC have different limitations.
6.42
18
IDT71V2577, IDT71V2579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
100-Pin Thin Quad Plastic Flatpack (TQFP) Package Diagram Outline
6.42
19
IDT71V2577, IDT71V2579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
119 Ball Grid Array (BGA) Package Diagram Outline
6.42
20
IDT71V2577, IDT71V2579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
165 Fine Pitch Ball Grid Array (fBGA) Package Diagram Outline
6.42
21
IDT71V2577, IDT71V2579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
OrderingInformation
IDT XXX
S
XX
X
X
Device
Type
Power
Speed
Package
Process/
Temperature
Range
Blank
I
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
PF
BG
BQ
100-pin Plastic Thin Quad Flatpack (TQFP)
119 Ball Grid Array (BGA)
165 Fine Pitch Ball Grid Array (fBGA)
75*
80
85
Access Time in Tenths of Nanoseconds
,
128K x 36 Flow-Through Burst Synchronous SRAM with 2.5V I/O
256K x 18 Flow-Through Burst Synchronous SRAM with 2.5V I/O
71V2577
71V2579
*Commercial temperature range only.
4877 drw 12
6.42
22
IDT71V2577, IDT71V2579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Datasheet Document History
7/23/99
9/17/99
Updatedtonewformat
RevisedI/Opindescription
Revisedblockdiagramforflow-throughfunctionality
Revised ISB1 and IZZ for speeds 7.5 to 8.5ns
Added119-leadBGApackagediagram
Pg. 2
Pg. 3
Pg. 8
Pg. 18
Pg. 20
AddedDatasheetDocumentHistory
12/31/99 Pg. 1, 4, 8, 11, 19
04/04/00 Pg. 18
Pg. 4
AddedIndustrialTemperaturerangeofferings
Add100pinTQFPPackageDiagramOutline
AddcapacitancetableforBGApackage;AddIndustrialtemperaturetotable;insertnoteto
AbsoluteMaxRatingtableandRecommendedOperatingTemperaturetables.
Addnewpackage offering, 13x15mm165fBGA
Correct119BGAPackageDiagramOutline
06/01/00
Pg. 20
07/15/00 Pg. 7
Pg. 8
AddnotereferencetoBG119pinout
AddDNUreference note toBQ165pinout
Pg. 20
10/25/00
Pg. 8
UpdateBG119PackageDiagramOutlineDimensions
RemovePreliminarystatus
Add reference note to pin N5 on BQ165 pinout, reserved for JTAG TRST
CORPORATE HEADQUARTERS
2975StenderWay
Santa Clara, CA 95054
for SALES:
for Tech Support:
sramhelp@idt.com
800-544-7726, x4033
800-345-7015 or 408-727-6116
fax: 408-492-8674
www.idt.com
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
6.42
23
IDT71V2577S85PFI8 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
IDT71V2577SA | IDT | 128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect | 获取价格 | |
IDT71V2577SA75BG | IDT | 128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect | 获取价格 | |
IDT71V2577SA75BGG | IDT | Cache SRAM, 128KX36, 7.5ns, CMOS, PBGA119, BGA-119 | 获取价格 | |
IDT71V2577SA75BGI | IDT | 128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect | 获取价格 | |
IDT71V2577SA75BQ | IDT | 128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect | 获取价格 | |
IDT71V2577SA75BQG | IDT | Cache SRAM, 128KX36, 7.5ns, CMOS, PBGA165, FBGA-165 | 获取价格 | |
IDT71V2577SA75BQI | IDT | 128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect | 获取价格 | |
IDT71V2577SA75PF | IDT | 128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect | 获取价格 | |
IDT71V2577SA75PFI | IDT | 128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect | 获取价格 | |
IDT71V2577SA80BG | IDT | 128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect | 获取价格 |
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