IDT74FCT827BTPY8 [IDT]
Bus Driver, FCT Series, 1-Func, 10-Bit, True Output, CMOS, PDSO24, SSOP-24;
| 型号： | IDT74FCT827BTPY8 |
| 厂家： | 
INTEGRATED DEVICE TECHNOLOGY |
| 描述： | Bus Driver, FCT Series, 1-Func, 10-Bit, True Output, CMOS, PDSO24, SSOP-24 驱动 光电二极管 输出元件 逻辑集成电路 |
| 文件： | 总7页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FAST CMOS
10-BIT BUFFER
IDT54/74FCT827AT/BT/CT
DESCRIPTION:
FEATURES:
TheFCT827Tis builtusinganadvanceddualmetalCMOStechnology.
−
−
−
Low input and output leakage ≤1µA (max.)
CMOS power levels
True TTL input and output compatibility
The FCT827T 10-bit bus drivers provide high-performance bus inter-
facebufferingforwidedata/addresspathsorbusescarryingparity.The10-
bit buffers have NAND-edoutputenables formaximumcontrolflexibility.
•
•
VOH = 3.3V (typ.)
VOL = 0.3V (typ.)
−
−
Meets or exceeds JEDEC standard 18 specifications
Military product compliant to MIL-STD-883, Class B and DESC
listed (dual marked)
A, B, and C speed grades (-15mA IOH, 48mA IOL)
Power off disable outputs permit “live insertion”
Available in the following packages:
Allofthe FCT827Thigh-performance interface familyare designedfor
high-capacitance load drive capability, while providing low-capacitance
bus loading at both inputs and outputs. All inputs have clamp diodes to
ground and all outputs are designed for low-capacitance bus loading in
high-impedancestate.
−
−
−
•
•
Industrial: SOIC, SSOP, QSOP, TSSOP
Military: CERDIP, LCC, CERPACK
FUNCTIONALBLOCKDIAGRAM
Y0
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
D0
D1
D2
D3
D4
D5
D6
D7
D8
D9
OE1 OE2
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
AUGUST 2000
1
c
1999 Integrated Device Technology, Inc.
DSC-5484/-
IDT54/74FCT827AT/BT/CT
FASTCMOS10-BITBUFFER
MILITARYANDINDUSTRIALTEMPERATURERANGES
PINCONFIGURATION
24
1
1
0
CC
V
OE
D
INDEX
23
22
21
20
19
18
17
16
15
14
13
2
3
4
Y0
4
3
2
28
27 26
1
2
D
D
Y1
Y2
1
5
6
7
8
2
25
24
23
22
21
20
19
D
Y2
3
D3
Y
D3
D4
3
4
Y
Y
5
6
7
8
9
D24-1
SO24-2
SO24-7
SO24-8
SO24-9
E24-1
Y4
4
D
NC
Y5
L28-1
NC
D5
5
D
Y5
Y
9
6
6
D
10
6
Y
D6
D7
D7
D8
7
Y
7
Y
11
12 13 14 15 16 17 18
Y8
10
11
9
9
D
Y
OE2
GND
12
CERDIP/ SOIC/ SSOP/ QSOP/ TSSOP/ CERPACK
TOP VIEW
LCC
TOP VIEW
ABSOLUTE MAXIMUM RATINGS(1)
PIN DESCRIPTION
Name
Description
I/O
Symbol
Rating
Max.
Unit
(2)
OEI
I
When both are LOW, the outputs are enabled. When
either one or both are HIGH, the outputs are High Z.
10-bit data input.
VTERM
Terminal Voltage with Respect to GND
–0.5 to +7
V
(3)
VTERM
Terminal Voltage with Respect to GND –0.5 to VCC+0.5
V
DI
YI
I
TSTG
Storage Temperature
DC Output Current
–65 to +150
–60 to +120
°C
O
10-bit data output.
IOUT
mA
8T-link
NOTES:
FUNCTION TABLE(1)
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum
Inputs
Outputs
OE1
OE2
DI
YI
Function
L
L
L
L
L
H
X
X
L
H
Z
Z
Transparent
rating conditions for extended periods may affect reliability.
terminal voltage may exceed Vcc by +0.5V unless otherwise noted.
No
H
X
X
H
Three-State
2. Inputs and Vcc terminals only.
3. Outputs and I/O terminals only.
NOTE:
1. H = HIGH
L = LOW
O
CAPACITANCE
Symbol
(TA = +25 C, f = 1.0MHz)
X = Don't Care
Z = High-Impedance
Parameter(1)
Conditions
Typ.
Max. Unit
CIN
Input Capacitance
VIN = 0V
6
10
12
pF
COUT
Output Capacitance
VOUT = 0V
8
pF
8T-link
NOTE:
1. This parameter is measured at characterization but not tested.
2
IDT54/74FCT827AT/BT/CT
FASTCMOS10-BITBUFFER
MILITARYANDINDUSTRIALTEMPERATURERANGES
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Industrial: TA = –40°C to +85°C, VCC = 5.0V ± 5%; Military: TA = –55°C to +125°C, VCC = 5.0V ± 10%
Symbol
Parameter
Input HIGH Level
Test Conditions(1)
Min.
Typ.(2) Max.
Unit
VIH
Guaranteed Logic HIGH Level
2
—
—
—
0.8
±1
±1
±1
±1
±1
–1.2
—
1
V
VIL
IIH
Input LOW Level
Guaranteed Logic LOW Level
VCC = Max.
—
—
—
—
—
—
—
—
—
V
Input HIGH Current(4)
Input LOW Current(4)
High Impedance Output Current
(3-State Output pins)(4)
Input HIGH Current(4)
Clamp Diode Voltage
Input Hysteresis
VI = 2.7V
VI = 0.5V
VO = 2.7V
VO = 0.5V
—
µA
IIl
—
IOZH
IOZL
II
VCC = Max.
—
µA
—
VCC = Max., VI = VCC (Max.)
VCC = Min., IIN = –18mA
—
µA
V
VIK
VH
ICC
–0.7
200
0.01
—
mV
mA
Quiescent Power Supply Current
VCC = Max., VIN = GND or VCC
OUTPUT DRIVE CHARACTERISTICS
Symbol
Parameter
Output HIGH Voltage
Test Conditions(1)
Min.
Typ.(2) Max.
Unit
VOH
VCC = Min.
IOH = –6mA MIL
2.4
3.3
—
V
VIN VIH or VIL
=
IOH = –8mA IND
IOH = –12mA MIL
IOH = –15mA IND
IOL = 32mA MIL
IOL = 48mA IND
2
3
—
VOL
IOS
Output LOW Voltage
Short Circuit Current
VCC = Min.
—
0.3
–120
0.5
V
VIN VIH or VIL
=
(3)
VCC = Max., VO = GND
–60
–225
mA
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at Vcc = 5.0V, +25°C ambient.
3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second.
4. The test limit for this parameter is ±5µA at TA = –55°C.
3
IDT54/74FCT827AT/BT/CT
FASTCMOS10-BITBUFFER
MILITARYANDINDUSTRIALTEMPERATURERANGES
POWER SUPPLY CHARACTERISTICS
Symbol
Parameter
Quiescent Power Supply Current
TTL Inputs HIGH
Test Conditions(1)
Min.
Typ.(2) Max.
Unit
∆ICC
V
CC = Max.
—
0.5
2
mA
(3)
V = 3.4V
IN
ICCD
Dynamic Power Supply Current(4)
VCC = Max.
V = V
—
0.15
0.25
mA/
IN
CC
Outputs Open
VIN = GND
MHz
OE1 = OE2 = GND
One Input Toggling
50% Duty Cycle
VCC = Max.
IC
Total Power Supply Current(6)
VIN = VCC
—
—
—
—
1.5
1.8
3
3.5
4.5
mA
Outputs Open
fi = 10MHz
VIN = GND
50% Duty Cycle
VIN = 3.4V
VIN = GND
=
OE1 OE
2 = GND
One Bit Toggling
VCC = Max.
V = V
6(5)
IN
CC
Outputs Open
fi = 2.5MHz
VIN = GND
50% Duty Cycle
VIN = 3.4V
VIN = GND
5
14(5)
=
OE1 OE
2 = GND
Eight Bits Toggling
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at VCC = 5.0V, +25°C ambient.
3. Per TTL driven input (VIN = 3.4V). All other inputs at VCC or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of the ICC formula. These limits are guaranteed but not tested.
6. IC = IQUIESCENT + IINPUTS + IDYNAMIC
IC = ICC + ∆ICC DHNT + ICCD (fCP/2 + fiNi)
ICC = Quiescent Current
∆ICC = Power Supply Current for a TTL High Input (VIN = 3.4V)
DH = Duty Cycle for TTL Inputs High
NT = Number of TTL Inputs at DH
ICCD = Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
fCP = Clock Frequency for Register Devices (Zero for Non-Register Devices)
fi = Input Frequency
Ni = Number of Inputs at fi
All currents are in milliamps and all frequencies are in megahertz.
4
IDT54/74FCT827AT/BT/CT
FASTCMOS10-BITBUFFER
MILITARYANDINDUSTRIALTEMPERATURERANGES
SWITCHING CHARACTERISTICS - INDUSTRIAL
FCT827AT
FCT827BT
FCT827CT
Min.(2)
Max.
Min.(2)
Max.
Min.(2)
Max.
Symbol
tPLH
Parameter
Propagation Delay
DI to YI
Conditions(1)
CL = 50pF
Unit
1.5
8
1.5
1.5
5
1.5
1.5
4.4
ns
tPHL
RL = 500Ω
CL = 300pF(3)
1.5
15
13
10
RL = 500Ω
CL = 50pF
RL = 500Ω
CL = 300pF(3)
tPZH
tPZL
Output Enable Time
OEI to YI
1.5
1.5
12
23
1.5
1.5
8
1.5
1.5
7
ns
ns
15
14
RL = 500Ω
CL = 5pF(3)
RL = 500Ω
CL = 50pF
RL = 500Ω
tPHZ
tPLZ
Output Disable Time
OEI to YI
1.5
1.5
9
1.5
1.5
6
7
1.5
1.5
5.7
6
10
SWITCHING CHARACTERISTICS - MILITARY
FCT827AT
FCT827BT
FCT827CT
Min.(2)
Max.
Min.(2)
Max.
Min.(2)
Max.
Symbol
tPLH
Parameter
Propagation Delay
DI to YI
Conditions(1)
CL = 50pF
Unit
1.5
9
1.5
6.5
1.5
5
ns
tPHL
RL = 500Ω
CL = 300pF(3)
1.5
17
1.5
14
1.5
11
RL = 500Ω
CL = 50pF
RL = 500Ω
CL = 300pF(3)
tPZH
tPZL
Output Enable Time
OEI to YI
1.5
1.5
13
25
1.5
1.5
9
1.5
1.5
8
ns
ns
16
15
RL = 500Ω
CL = 5pF(3)
RL = 500Ω
CL = 50pF
RL = 500Ω
tPHZ
tPLZ
Output Disable Time
OEI to YI
1.5
1.5
9
1.5
1.5
7
8
1.5
1.5
6.7
7
10
NOTES:
1. See test circuit and waveforms.
2. Minimum limits are guaranteed but not tested on Propagation Delays.
3. These parameters are guaranteed but not tested.
5
IDT54/74FCT827AT/BT/CT
FASTCMOS10-BITBUFFER
MILITARYANDINDUSTRIALTEMPERATURERANGES
TESTCIRCUITSANDWAVEFORMS
SWITCH POSITION
TEST CIRCUITS FOR ALL OUTPUTS
Test
Switch
Closed
Open
V CC
7.0V
Open Drain
Disable Low
Enable Low
All Other Tests
500Ω
500Ω
V OUT
VIN
Pulse
D.U.T.
Generator
8-link
50pF
DEFINITIONS:
L
T
C = Load capacitance: includes jig and probe capacitance.
R = Termination resistance: should be equal to Z
R
L
C
T
OUT
of the Pulse
Generator.
Octal link
PULSEWIDTH
SET-UP, HOLD, AND RELEASE TIMES
3V
1.5V
0V
DATA
INPUT
LOW-HIGH-LOW
PULSE
tH
tSU
1.5V
3V
1.5V
0V
TIMING
INPUT
tW
ASYNCHRONOUS CONTROL
tREM
PRESET
3V
CLEAR
ETC.
1.5V
0V
HIGH-LOW-HIGH
PULSE
1.5V
SYNCHRONOUS CONTROL
PRESET
3V
1.5V
0V
Octal link
CLEAR
CLOCK ENABLE
ETC.
tSU
tH
Octal link
PROPAGATIONDELAY
ENABLEANDDISABLETIMES
ENABLE
DISABLE
3V
3V
SAME PHASE
INPUT TRANSITION
1.5V
0V
CONTROL
INPUT
1.5V
0V
tPLH
tPHL
tPHL
tPZL
tPLZ
VOH
OUTPUT
3.5V
1.5V
3.5V
VOL
1.5V
VOL
OUTPUT
NORMALLY
LOW
SWITCH
CLOSED
tPLH
0.3V
0.3V
3V
tPZH
tPHZ
OPPOSITE PHASE
INPUT TRANSITION
1.5V
0V
VOH
OUTPUT
NORMALLY
HIGH
SWITCH
OPEN
1.5V
0V
Octal link
0V
Octal link
NOTES:
1. Diagram shown for input Control Enable-LOW and input Control Disable-
HIGH
2. Pulse Generator for All Pulses: Rate ≤ 1.0MHz; tF ≤ 2.5ns; tR ≤ 2.5ns
6
IDT54/74FCT827AT/BT/CT
FASTCMOS10-BITBUFFER
MILITARYANDINDUSTRIALTEMPERATURERANGES
ORDERINGINFORMATION
XXXX
XX
X
IDT
XX
FCT
Package
Process
Device Type
Temp. Range
Blank
B
Industrial
MIL-STD-883, Class B
Industrial Options
SO
PY
Q
Small Outline IC (SO24-2)
Shrink Small Outline Package (SO24-7)
Quarter-size Small Outline Package (SO24-8)
Thin Shrink Small Outline Package (SO24-9)
PG
Military Options
D
E
L
CERDIP (D24-1)
CERPACK (E24-1)
Leadless Chip Carrier (L28-1)
Fast CMOS 10-Bit Buffer
827AT
827BT
827CT
54
74
– 55°C to +125°C
– 40°C to +85°C
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7
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