IW4518BD [IKSEMICON]

Dual Up-Counter High-Voltage Silicon-Gate CMOS; 双向上计数器高压硅栅CMOS
IW4518BD
型号: IW4518BD
厂家: IK SEMICON CO., LTD    IK SEMICON CO., LTD
描述:

Dual Up-Counter High-Voltage Silicon-Gate CMOS
双向上计数器高压硅栅CMOS

计数器 高压 栅
文件: 总6页 (文件大小:269K)
中文:  中文翻译
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TECHNICAL DATA  
IW4518B  
Dual Up-Counter  
High-Voltage Silicon-Gate CMOS  
The IW4518B Dual BCD Up-Counter consists two identical,  
internally synchronous 4-stage counters. The counter stages are D-type  
flip-flops having interchangeable CLOCK and ENABLE lines for  
incrementing on either the positive-going or negative-going transition. For  
single-unit operation the ENABLE input is maintained high and the  
counter advances on each positive-going transition of the CLOCK. The  
counters are cleared by high levels on their RESET lines.  
The counter can be cascaded in the ripple mode by connecting Q4 to  
the enable input of the subsequent counter while the CLOCK input of the  
latter is held low.  
ORDERING INFORMATION  
IW4518BN Plastic  
IW4518BD SOIC  
TA = -55° to 125° C for all packages  
Operating Voltage Range: 3.0 to 18 V  
Maximum input current of 1 μA at 18 V over full package-temperature  
range; 100 nA at 18 V and 25°C  
Noise margin (over full package temperature range):  
1.0 V min @ 5.0 V supply  
2.0 V min @ 10.0 V supply  
2.5 V min @ 15.0 V supply  
PIN ASSIGNMENT  
LOGIC DIAGRAM  
FUNCTION TABLE  
Inputs  
CLOCK ENABLE RESET  
Outputs  
Mode  
H
X
L
L
L
L
L
L
L
H
Increment Counter  
Increment Counter  
No Change  
L
PIN 16=VCC  
PIN 8= GND  
X
No Change  
No Change  
H
X
No Change  
X
Q1 thru Q4=L  
X = don’t care  
Rev. 00  
IW4518B  
MAXIMUM RATINGS*  
Symbol  
Parameter  
Value  
-0.5 to +20  
-0.5 to VCC +0.5  
-0.5 to VCC +0.5  
±10  
Unit  
V
VCC  
VIN  
VOUT  
IIN  
DC Supply Voltage (Referenced to GND)  
DC Input Voltage (Referenced to GND)  
DC Output Voltage (Referenced to GND)  
DC Input Current, per Pin  
V
V
mA  
mW  
PD  
Power Dissipation in Still Air, Plastic DIP+  
SOIC Package+  
750  
500  
PD  
Tstg  
TL  
Power Dissipation per Output Transistor  
Storage Temperature  
100  
-65 to +150  
260  
mW  
°C  
Lead Temperature, 1 mm from Case for 10 Seconds  
(Plastic DIP or SOIC Package)  
°C  
*Maximum Ratings are those values beyond which damage to the device may occur.  
Functional operation should be restricted to the Recommended Operating Conditions.  
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C  
SOIC Package: : - 7 mW/°C from 65° to 125°C  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
VCC  
Parameter  
Min  
3.0  
0
Max  
18  
Unit  
V
DC Supply Voltage (Referenced to GND)  
DC Input Voltage, Output Voltage (Referenced to GND)  
Operating Temperature, All Package Types  
VIN, VOUT  
TA  
VCC  
+125  
V
-55  
°C  
This device contains protection circuitry to guard against damage due to high static voltages or electric fields.  
However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this  
high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND(VIN or  
VOUT)VCC.  
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused  
outputs must be left open.  
Rev. 00  
IW4518B  
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)  
VCC  
V
Guaranteed Limit  
Symbol  
VIH  
Parameter  
Test Conditions  
Unit  
V
-55°C  
25°C  
125  
°C  
Minimum High-Level VOUT= 0.5 V or VCC - 0.5V  
Input Voltage  
5.0  
10  
15  
3.5  
7
3.5  
7
3.5  
7
VOUT= 1.0 V or VCC - 1.0 V  
VOUT= 1.5 V or VCC - 1.5V  
11  
11  
11  
VIL  
VOH  
VOL  
Maximum Low -  
Level Input Voltage  
VOUT= 0.5 V or VCC - 0.5V  
VOUT= 1.0 V or VCC - 1.0 V  
VOUT= 1.5 V or VCC - 1.5V  
5.0  
10  
15  
1.5  
3
4
1.5  
3
4
1.5  
3
4
V
V
V
Minimum High-Level VIN=GND or VCC  
Output Voltage  
5.0  
10  
15  
4.95  
9.95  
14.95  
4.95  
9.95  
14.95 14.95  
4.95  
9.95  
Maximum Low-Level VIN=GND or VCC  
Output Voltage  
5.0  
10  
15  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
IIN  
Maximum Input  
Leakage Current  
VIN= GND or VCC  
VIN= GND or VCC  
18  
±0.1  
±0.1  
±1.0  
μA  
μA  
ICC  
Maximum Quiescent  
Supply Current  
(per Package)  
5.0  
10  
15  
20  
5
10  
20  
100  
5
10  
20  
100  
150  
300  
600  
3000  
IOL  
Minimum Output  
Low (Sink) Current  
VIN= GND or VCC  
UOL=0.4 V  
UOL=0.5 V  
mA  
mA  
5.0  
10  
15  
0.64  
1.6  
4.2  
0.51  
1.3  
3.4  
0.36  
0.9  
2.4  
UOL=1.5 V  
IOH  
Minimum Output  
VIN= GND or VCC  
High (Source) Current UOH=2.5 V  
UOH=4.6 V  
5.0  
5.0  
10  
-2  
-1.6  
-0.51  
-1.3  
-1.15  
-0.36  
-0.9  
-0.64  
-1.6  
-4.2  
UOH=9.5 V  
UOH=13.5 V  
15  
-3.4  
-2.4  
Rev. 00  
IW4518B  
AC ELECTRICAL CHARACTERISTICS (CL=50pF, RL=200kΩ, Input tr=tf=20 ns)  
VCC  
V
Guaranteed Limit  
Symbol  
fmax  
Parameter  
Unit  
-55°C  
25°C  
125°C  
Maximum Clock Frequency, (Figure 1)  
5.0  
10  
15  
1.5  
3
4
1.5  
3
4
0.75  
1.5  
2
MHz  
tPHL, tPLH Maximum Propagation Delay, Clock or Enable  
to Output (Figures 1,3)  
5.0  
10  
15  
560  
230  
160  
560  
230  
160  
1120  
460  
320  
ns  
ns  
ns  
pF  
tPHL  
Maximum Propagation Delay, Reset to Output  
(Figure 2)  
5.0  
10  
15  
650  
225  
170  
650  
225  
170  
1300  
450  
340  
tTHL, tTLH Maximum Output Transition Time, Any Output  
(Figure 1)  
5.0  
10  
15  
200  
100  
80  
200  
100  
80  
400  
200  
160  
CIN  
Maximum Input Capacitance  
-
7.5  
TIMING REQUIREMENTS (CL=50pF, RL=200 kΩ, Input tr=tf=20 ns)  
VCC  
Guaranteed Limit  
Symbol  
tw  
Parameter  
V
Unit  
ns  
-55°C  
25°C  
125°C  
Minimum Pulse Width, Clock (Figure 1)  
5.0  
10  
15  
200  
100  
70  
200  
100  
70  
400  
200  
140  
tw  
Minimum Pulse Width, Reset (Figure 2)  
Minimum Pulse Width, Enable (Figure 3)  
5.0  
10  
15  
250  
110  
80  
250  
110  
80  
500  
220  
160  
ns  
ns  
μs  
tw  
5.0  
10  
15  
400  
200  
140  
400  
200  
140  
800  
400  
280  
tr, tf  
Maximum Input Rise and Fall Times  
(Figure 1)  
5.0  
10  
15  
15  
5
5
15  
5
5
15  
5
5
Figure 1. Switching Waveforms  
Figure 2. Switching Waveforms  
Rev. 00  
IW4518B  
Figure 3. Switching Waveforms  
TIMING DIAGRAM  
EXPANDED LOGIC DIAGRAM  
(1/2 of the Device)  
Rev. 00  
IW4518B  
N SUFFIX PLASTIC DIP  
(MS - 001BB)  
A
Dimension, mm  
9
8
16  
1
Symbol  
MIN  
18.67  
6.1  
MAX  
19.69  
7.11  
B
A
B
C
D
F
5.33  
0.36  
1.14  
0.56  
F
L
1.78  
C
2.54  
7.62  
G
H
J
SEATING  
PLANE  
-T-  
N
M
0
°
10  
°
J
G
K
H
D
2.92  
7.62  
0.2  
3.81  
8.26  
0.36  
K
L
M
N
0.25 (0.010) M  
T
NOTES:  
1. Dimensions “A”, “B” do not include mold flash or protrusions.  
Maximum mold flash or protrusions 0.25 mm (0.010) per side.  
0.38  
D SUFFIX SOIC  
(MS - 012AC)  
Dimension, mm  
A
16  
Symbol  
MIN  
9.8  
MAX  
10  
9
A
B
C
D
F
H
B
P
3.8  
4
1.35  
0.33  
0.4  
1.75  
0.51  
1.27  
1
8
G
R x 45  
C
1.27  
5.72  
G
H
J
-T-  
SEATING  
PLANE  
K
M
D
J
F
0.25 (0.010) M T C  
M
0
°
8
°
0.1  
0.19  
5.8  
0.25  
0.25  
6.2  
K
M
P
NOTES:  
1. Dimensions A and B do not include mold flash or protrusion.  
2. Maximum mold flash or protrusion 0.15 mm (0.006) per side  
0.25  
0.5  
R
for A; for B 0.25 mm (0.010) per side.  
Rev. 00  

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