113MT100KB [INFINEON]
THREE PHASE CONTROLLED BRIDGE; 三相控桥
| 型号： | 113MT100KB |
| 厂家： | 
Infineon |
| 描述： | THREE PHASE CONTROLLED BRIDGE |
| 文件： | 总9页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27503 08/97
MT..KB SERIES
THREE PHASE CONTROLLED BRIDGE
Power Modules
Features
55 A
90 A
Package fully compatible with the industry standard INT-A-pak
power modules series
110 A
High thermal conductivity package, electrically insulated case
Outstanding number of power encapsulated components
Excellent power volume ratio
4000 V
isolating voltage
RMS
UL E78996 approved
Description
A range of extremely compact, encapsulated three phase
controlled bridge rectifiers offering efficient and reliable
operation. They are intended for use in general purpose
and heavy duty applications.
Major Ratings and Characteristics
53MT.KB 93MT.KB 113MT.KB
52MT.KB 92MT.KB 112MT.KB Units
51MT.KB 91MT.KB 111MT.KB
Parameters
IO
55
85
90
110
85
A
°C
A
@ TC
85
IFSM @50Hz
390
410
770
700
7700
950
1130
1180
6380
5830
63800
@60Hz
2
1000
4525
4130
A
2
I t
@50Hz
@60Hz
A s
2
A s
2
2
I √t
45250
A √s
VRRM range
TSTG range
800 to 1600
V
-40 to 125
-40 to 125
°C
°C
TJ
range
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1
53-93-113MT..KB Series
Bulletin I27503 08/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM, maximum
VRSM, maximum
VDRM, max. repetitive IRRM/IDRM max.
Type number
repetitive peak
reverse voltage
V
non-repetitive peak peak off-state voltage @ TJ = 125°C
reverse voltage
V
gate open circuit
V
mA
10
80
100
120
140
160
80
800
1000
1200
1400
1600
800
900
1100
1300
1500
1700
900
800
1000
1200
1400
1600
800
53/52/51MT..KB
93/92/91MT..KB
100
120
140
160
1000
1200
1400
1600
1100
1300
1500
1700
1000
1200
1400
1600
113/112/111MT..KB
20
Forward Conduction
53MT.KB 93MT.KB 113MT.KB
Parameter
52MT.KB 92MT.KB 112MT.KB Units Conditions
51MT.KB 91MT.KB 111MT.KB
IO
Maximum DC output current
@ Case temperature
55
85
90
85
110
85
A
°C
A
120° Rect conduction angle
ITSM Maximum peak, one-cycle
forward, non-repetitive
390
410
330
345
770
700
540
500
7700
950
1130
1180
950
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
1000
800
on state surge current
840
1000
6380
5830
4510
4120
63800
Initial
I2t
Maximum I2t for fusing
4525
4130
3200
2920
45250
A2s t = 10ms No voltage
TJ = TJ max.
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
I2√t
Maximum I2√t for fusing
A2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold
1.17
1.09
1.27
4.10
3.59
1.65
1.04
1.27
3.93
3.37
1.57
V
(16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.
voltage
VT(TO)2 High level value of threshold
voltage
1.45
(I > π x IT(AV)), @ TJ max.
r
Low level value on-state
slope resistance
12.40
11.04
2.68
mΩ (16.7% x π x IT(AV) < I < π x IT ), @ T max.
(AV)
J
t1
r
High level value on-state
slope resistance
(I > π x IT(AV)), @ TJ max.
t2
VTM Maximum on-state voltage drop
V
Ipk = 150A, TJ = 25°C
tp = 400µs single junction
di/dt Max. non-repetitive rate
of rise of turned oncurrent
150
200
400
A/µs TJ = 25oC, from 0.67 VDRM, ITM = π x IT(AV)
,
I
= 500mA,t <0.5µs,t >6µs
g
p
r
IH
Max. holding current
TJ =25oC, anodesupply=6V,
mA resistive load, gate open circuit
TJ =25oC,anode supply=6V,resistive load
IL
Max. latching current
2
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53-93-113MT..KB Series
Bulletin I27503 08/97
Blocking
53MT.KB 93MT.KB 113MT.KB
Parameter
52MT.KB 92MT.KB 112MT.KB Units Conditions
51MT.KB 91MT.KB 111MT.KB
VINS RMS isolation voltage
4000
V
TJ = 25oC all terminal shorted
f = 50Hz, t = 1s
dv/dt Max. critical rate of rise
of off-state voltage (*)
500
V/µs TJ = TJ max., linear to 0.67 VDRM
gate open circuit
,
(*) Available with dv/dt = 1000V/ms, to complete code add S90 i.e. 113MT160KBS90.
Triggering
53MT.KB 93MT.KB 113MT.KB
Parameter
52MT.KB 92MT.KB 112MT.KB Units Conditions
51MT.KB 91MT.KB 111MT.KB
PGM Max. peak gate power
10
W
TJ = TJ max.
PG(AV) Max. average gate power
2.5
IGM
Max. peak gate current
2.5
10
A
V
-VGT Max. peak negative
gate voltage
VGT Max. required DC gate
voltage to trigger
4.0
2.5
V
TJ=-40°C
TJ= 25°C Anodesupply=6V,resistiveload
1.7
TJ= 125°C
TJ=-40°C
IGT
Max. required DC gate
current to trigger
270
150
80
mA TJ= 25°C Anodesupply=6V,resistiveload
TJ =125°C
VGD Max. gate voltage
that will not trigger
0.25
V
@ TJ = TJ max., ratedVDRMapplied
IGD
Max. gate current
that will not trigger
6
mA
Thermal and Mechanical Specifications
53MT.KB 93MT.KB 113MT.KB
Parameter
52MT.KB 92MT.KB 112MT.KB Units Conditions
51MT.KB 91MT.KB 111MT.KB
TJ
Max. junction operating
temperature range
-40 to 125
°C
Tstg
Max. storage temperature
range
-40 to 125
°C
RthJC Max. thermal resistance,
junction to case
0.18
1.07
0.19
1.17
0.14
0.86
0.15
0.91
0.03
0.12
0.70
0.12
0.74
K/W DC operation per module
DC operation per junction
120° Rect condunction angle per module
120° Rect condunction angle per junction
RthCS Max. thermal resistance,
case to heatsink
K/W Per module
Mounting surface smooth, flat an greased
A mounting compound is recommended and the
Nm
T
Mounting
to heatsink
to terminal
4 to 6
3 to 4
225
torque should be rechecked after a period of 3
hoursto allow for the spread of the compound.
torque ± 10%
Lubricatedthreads.
g
wt
Approximate weight
3
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53-93-113MT..KB Series
Bulletin I27503 08/97
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sinusoidal conduction @ TJ max.
Rectangular conduction @ TJ max.
Devices
Units
180o
0.072
0.033
120o
0.085
0.039
0.033
90o
60o
30o
180o
0.055
0.027
0.023
120o
0.091
0.044
0.037
90o
60o
30o
53/52/51MT.KB
93/92/91MT.KB
0.108
0.051
0.042
0.152
0.069
0.057
0.233
0.099
0.081
0.117
0.055
0.046
0.157
0.071
0.059
0.236 K/W
0.100
113/112/111MT.KB 0.027
0.082
Ordering Information Table
Device Code
11
3
MT 160
K
B
S90
1
2
3
4
5
6
1
2
-
-
Current rating code: 5 = 55 A (Avg)
= 90 A (Avg)
11 = 110 A (Avg)
Circuit configuration code: 3 = Full-controlled bridge
9
2 = Positive half-controlled bridge
1 = Negative half-controlled bridge
3
4
5
6
-
-
-
-
Essential part number
Voltage code: Code x 10 = VRRM (See Voltage Ratings Table)
Generation II
Critical dv/dt: None = 500V/µs (Standard value)
S90 = 1000V/µs (Special selection)
full-controlled bridge
(53, 93, 113MT..KB)
negative half-controlled bridge
(51, 91, 111MT..KB)
positive half-controlled bridge
(52, 92, 112MT..KB)
NOTE: To order the Optional Hardware see Bulletin I27900
4
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53-93-113MT..KB Series
Bulletin I27503 08/97
Outline Table (with optional barriers)
All dimensions in millimeters (inches)
Outline Table (without optional barriers)
All dimensions in millimeters (inches)
5
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53-93-113MT..KB Series
Bulletin I27503 08/97
130
1000
100
10
53MT..KB Series
T = 25°C
J
120
110
100
90
T = 125°C
J
120°
(Rect)
53MT..KB Series
Per Junction
80
1
0
10
20
30
40
50
60
0
1
2
3
4
5
6
7
Instantaneous On-state Voltage (V)
Total Output Current (A)
Fig. 1 - Current Ratings Characteristic
Fig. 2 - Forward Voltage Drop Characteristics
220
0
.
53MT..KB Series
200
t
1
2
h
0
S
0
.
2
A
K
/
W
T =125°C
.
3
J
K
/
K
180
160
/
W
W
120°
140
(Rect)
120
100
80
60
40
20
0
1
.
5
K
/
W
0
5
10 15 20 25 30 35 40 45 50 505
25
50
75
100
125
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Total Power Loss Characteristics
350
300
250
200
150
400
350
300
250
200
150
At Any Rated Load Condition And With
Rated V Applied Following Surge.
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
RRM
Initial T =125°C
J
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Voltage Reapplied
Rated V
Reapplied
RRM
53MT..KB Series
Per Junction
53MT..KB Series
Per Junction
1
10
100
0.01
0.1
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 4 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
6
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53-93-113MT..KB Series
Bulletin I27503 08/97
130
120
110
100
90
1000
100
10
93MT..KB Series
120°
(Rect)
T = 25°C
J
T = 125°C
J
93MT..KB Series
Per Junction
80
1
0.5
0
20
40
60
80
100
1
1.5
2
2.5
3
3.5
4
Instantaneous On-state Voltage (V)
Total Output Current (A)
Fig. 6 - Current Ratings Characteristic
Fig. 7 - Forward Voltage Drop Characteristics
300
0
0
.
93MT..KB Series
T =125°C
.
2
1
2
K
K
/
/
W
250
J
W
0
.
4
K
200
/
W
0
120°
(Rect)
150
.
5
K
/
W
0
.
7
K
/
W
1
K
/
W
100
50
0
0
10 20 30 40 50 60 70 80 90
25
50
75
100
125
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - Total Power Loss Characteristics
850
800
750
700
650
600
550
500
450
400
1000
900
800
700
600
500
400
300
At Any Rated Load Condition And With
Rated V Applied Following Surge.
Initial T =125°C
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
RRM
J
Initial T = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
No Voltage Reapplied
Rated V
Reapplied
RRM
93MT..KB Series
Per Junction
93MT..KB Series
Per Junction
1
10
100
0.01
0.1
Pulse Train Duration (s)
1
NumberOf Equal Amplitude Half CycleCurrent Pulses (N)
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 10 - Maximum Non-Repetitive Surge Current
7
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53-93-113MT..KB Series
Bulletin I27503 08/97
1000
100
10
130
113MT..KBSeries
120
110
100
90
120°
(Rect)
T = 25°C
J
T =125°C
J
113MT..KB Series
Per Junction
80
1
0
20
40
60
80
100 120
0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous On-state Voltage (V)
Total Output Current (A)
Fig. 11 - Current Ratings Characteristic
Fig. 12 - Forward Voltage Drop Characteristics
350
113MT..KB Series
T =125°C
0
.
1
300
250
200
150
100
50
J
0
.
2
2
K
/
K
/
W
W
0
.
3
K
/
W
0
.
4
K
120°
(Rect)
/
W
0
.
5
K
/
W
0
.
7
K
/
W
0
0
10 20 30 40 50 60 70 80 90 100110
25
50
75
100
125
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 13 - Total Power Loss Characteristics
1000
900
800
700
600
500
400
1200
1100
1000
900
At Any Rated Load Condition And With
Rated V
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Applied Following Surge.
Initial T = 125°C
RRM
J
Initial T = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
No Voltage Reapplied
Rated V
Reapplied
RRM
800
700
600
500 113MT..KBSeries
Per Junction
400
0.01
113MT..KB Series
Per Junction
1
10
100
0.1
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 14 - Maximum Non-Repetitive Surge Current
Fig. 15 - Maximum Non-Repetitive Surge Current
8
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53-93-113MT..KB Series
Bulletin I27503 08/97
10
1
Steady State Value
R
= 1.07 K/W
= 0.86 K/W
= 0.70 K/W
53MT..KB Series
93MT..KB Series
thJC
R
thJC
R
thJC
(DCOperation)
113MT..KB Series
0.1
0.01
0.001
Per Junction
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 16 - Thermal Impedance ZthJC Characteristics
100
10
1
Rectangular gate pulse
a) Recommended load line for
rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
b) Recommended loadline for
<= 30% rated di/dt: 20 V, 65 ohms
tr = 1 µs, tp >=6 µs
(1) PGM= 100 W, tp = 500 µs
(2) PGM= 50 W, tp = 1 ms
(3) PGM= 20 W, tp = 25 ms
(4) PGM= 10 W, tp = 5 ms
(a)
(b)
(4)
(2) (1)
(3)
VGD
IGD
53/ 93/ 113MT..KBSeries Frequency Limited by PG(AV)
0.1 10 100 1000
0.1
0.001
0.01
1
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
9
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