16FR100MPBF [INFINEON]

Rectifier Diode, 1 Phase, 1 Element, 16A, 1000V V(RRM), Silicon, DO-203AA, ROHS COMPLIANT, DO-4, 1 PIN;
16FR100MPBF
型号: 16FR100MPBF
厂家: Infineon    Infineon
描述:

Rectifier Diode, 1 Phase, 1 Element, 16A, 1000V V(RRM), Silicon, DO-203AA, ROHS COMPLIANT, DO-4, 1 PIN

二极管
文件: 总6页 (文件大小:74K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Bulletin I20204 rev. A 09/98  
16F(R) SERIES  
STANDARD RECOVERY DIODES  
Stud Version  
Features  
16 A  
High surge current capability  
Avalanche types available  
Stud cathode and stud anode version  
Wide current range  
Types up to 1200V VRRM  
TypicalApplications  
Battery charges  
Converters  
Power supplies  
Machine tool controls  
Major Ratings and Characteristics  
Parameters  
IF(AV)  
16F(R)  
16  
Units  
A
@ TC  
140  
25  
°C  
A
IF(RMS)  
IFSM  
@ 50Hz  
@ 60Hz  
@ 50Hz  
@ 60Hz  
range  
350  
A
370  
A
I2t  
612  
A2s  
A2s  
V
560  
VRRM  
TJ  
100 to 1200  
- 65 to 175  
case style  
DO-203AA (DO-4)  
range  
°C  
1
www.irf.com  
16F(R) Series  
Bulletin I20204 rev. A 09/98  
ELECTRICAL SPECIFICATIONS  
Voltage Ratings  
Voltage  
Code  
VRRM, maximum  
VRSM, maximum non-  
VR(BR), minimum  
IRRM max.  
Type number  
repetitive peak  
reverse voltage  
V
repetitive peak  
reverse voltage  
V
avalanche  
voltage  
@ TJ = 175°C  
V
(1)  
mA  
10  
20  
100  
200  
150  
275  
--  
--  
40  
400  
500  
500  
750  
950  
1150  
1350  
16F(R)  
60  
600  
725  
12  
80  
800  
950  
100  
120  
1000  
1200  
1200  
1400  
(1) Avalanche version only available from VRRM 400V to 1200V.  
Forward Conduction  
Parameter  
16F(R)  
Units Conditions  
IF(AV) Max. average forward current  
@ Case temperature  
16  
140  
25  
A
°C  
A
180° conduction, half sine wave  
IF(RMS) Max. RMS forward current  
PR  
Maximum non-repetitive  
peak reverse power  
15  
K/W 10µs square pulse, TJ = TJ max.  
see note (2)  
IFSM  
Max. peak, one-cycle forward,  
350  
370  
295  
310  
612  
560  
435  
395  
6120  
t = 10ms  
t = 8.3ms  
t = 10ms  
t = 8.3ms  
t = 10ms  
t = 8.3ms  
t = 10ms  
t = 8.3ms  
No voltage  
reapplied  
non-repetitive surge current  
A
100% VRRM  
reapplied  
Sinusoidal half wave,  
Initial TJ = TJ max.  
I2t  
Maximum I2t for fusing  
No voltage  
reapplied  
A2s  
100% VRRM  
reapplied  
I2t  
Maximum I2t for fusing  
A2s t = 0.1 to 10ms, no voltage reapplied  
VF(TO)1 Low level value of threshold  
0.77  
0.90  
7.80  
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.  
voltage  
V
VF(TO)2 High level value of threshold  
voltage  
(I > π x IF(AV)), TJ = TJ max.  
r
Low level value of forward  
slope resistance  
1
f
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.  
mΩ  
r
High level value of forward  
slope resistance  
2
f
5.70  
1.23  
(I > π x IF(AV)), TJ = TJ max.  
VFM  
Max. forward voltage drop  
V
I = 50A, TJ = 25°C, t = 400µs rectangular wave  
pk p  
(2) Available only for Avalanche version, all other parameters the same as 16F.  
2
www.irf.com  
16F(R) Series  
Bulletin I20204 rev. A 09/98  
Thermal and Mechanical Specifications  
Parameter  
16F(R)  
Units Conditions  
TJ  
T
Max. junction operating temperature range  
Max. storage temperature range  
-65 to 175  
-65 to 200  
°C  
stg  
RthJC Max. thermal resistance, junction to case  
1.6  
0.5  
DC operation  
K/W  
Nm  
RthCS Max. thermal resistance, case  
to heatsink  
Mounting surface, smooth, flat and  
greased  
T
Mounting torque, ± 10%  
1.2  
Lubricated threads  
(1.5)  
(Not lubricated threads)  
See Outline Table  
wt  
Approximate weight  
Case style  
7 (0.25)  
g (oz)  
DO-203AA (DO-4)  
RthJC Conduction  
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)  
Conduction angle Sinusoidal conduction Rectangular conduction Units  
Conditions  
TJ = TJ max.  
180°  
120°  
90°  
0.31  
0.38  
0.49  
0.72  
1.20  
0.23  
0.40  
0.54  
0.75  
1.21  
K/W  
60°  
30°  
Ordering Information Table  
Device Code  
A
16  
F
R
120  
M
1
2
3
4
5
6
1
-
A
= Avalanche diode  
None = Standard diode  
2
3
4
-
-
-
Current rating: Code = IF(AV)  
F
= Standard device  
None = Stud Normal Polarity (Cathode to Stud)  
= Stud Reverse Polarity (Anode to Stud)  
R
5
6
-
-
Voltage code: Code x 10 = VRRM (See Voltage Ratings table)  
None = StudbaseDO-203AA(DO-4)10-32UNF-2A  
M
= Stud base DO-203AA (DO-4) M5 X 0.8 - (Not available for Avalanche diodes)  
3
www.irf.com  
16F(R) Series  
Bulletin I20204 rev. A 09/98  
Outlines Table  
Case Style DO-203AA (DO-4)  
All dimensions in millimeters (inches)  
180  
180  
16F(R) Series  
R
16F(R) Series  
R
(DC) = 1.6 K/W  
(DC) =1.6 K/W  
thJC  
thJC  
170  
160  
150  
140  
130  
170  
160  
150  
140  
130  
Conduction Angle  
Conduction Period  
90°  
90°  
60° 120°  
60°  
120°  
30°  
180°  
30°  
180°  
DC  
0
4
8
12  
16  
20  
0
5
10  
15  
20  
25  
30  
Average Forward Current (A)  
Average Forward Current (A)  
Fig. 1 - Current Ratings Characteristics  
Fig. 2 - Current Ratings Characteristics  
4
www.irf.com  
16F(R) Series  
Bulletin I20204 rev. A 09/98  
20  
16  
12  
8
180°  
120°  
90°  
60°  
30°  
t
h
S
A
1
0
K
/
W
RMS Limit  
1
5
K
/W  
2
0
K
Conduction Angle  
/
W
4
16F(R) Series  
T =175°C  
J
0
0
4
8
12  
16  
20  
25  
50  
75  
100  
Maximum Allowable Ambient Temperature (°C)  
Average Forward Current (A)  
Fig. 3 - Forward Power Loss Characteristics  
25  
20  
15  
10  
5
DC  
R
h
t
S
180°  
120°  
90°  
60°  
30°  
A
=
6
4
K
K
/
W
/
W
-
D
RMS Limit  
e
l
t
a
8
K
/
R
W
1
0
K
/
W
1
5
K
/
W
2
0
K
/
Conduction Period  
W
3
0
K
/W  
16F(R) Series  
T = 175°C  
J
0
0
5
10  
15  
20  
25  
300  
25  
50  
75  
100  
Average Forward Current (A)  
Maximum Allowable Ambient Temperature (°C)  
Fig. 4 - Forward Power Loss Characteristics  
325  
300  
275  
250  
225  
200  
175  
150  
125  
350  
325  
300  
275  
250  
225  
200  
175  
150  
125  
At Any Rated Load Condition And With  
Rated V  
Maximum Non Repetitive Surge Current  
Versus Pulse Train Duration.  
Applied Following Surge.  
Initial T =175°C  
RRM  
Initial T =175°C  
J
No Voltage Reapplied  
J
@60 Hz 0.0083 s  
@50 Hz 0.0100 s  
Rated V  
Reapplied  
RRM  
16F(R)Series  
16F(R) Series  
1
10  
100  
0.01  
0.1  
Pulse Train Duration (s)  
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)  
Fig. 5 - Maximum Non-Repetitive Surge Current  
Fig. 6 - Maximum Non-Repetitive Surge Current  
5
www.irf.com  
16F(R) Series  
Bulletin I20204 rev. A 09/98  
10  
1000  
Steady State Value  
=1.6 K/W  
T = 25°C  
J
R
thJC  
(DCOperation)  
T =175°C  
J
100  
10  
1
1
16F(R) Series  
1
16F(R) Series  
0.1  
0.001  
0.01  
0.1  
10  
0
1
2
3
4
5
6
Square Wave Pulse Duration (s)  
Instantaneous Forward Voltage (V)  
Fig. 7 - Forward Voltage Drop Characteristics  
Fig. 8 - Thermal Impedance ZthJC Characteristics  
WORLDHEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.  
EUROPEANHEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408.  
IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801.  
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933.  
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220.  
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086.  
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630.  
IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936.  
http://www.irf.com  
Fax-On-Demand: +44 1883 733420  
Data and specifications subject to change without notice.  
6
www.irf.com  

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