25TTS12STR [INFINEON]
Silicon Controlled Rectifier, 25A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element,;型号: | 25TTS12STR |
厂家: | Infineon |
描述: | Silicon Controlled Rectifier, 25A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, 栅极 可控硅 局域网 |
文件: | 总7页 (文件大小:99K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Bulletin I2135 rev. D 03/99
SAFEIR Series
25TTS..FP
PHASE CONTROL SCR
TO-220 FULLPAK
VT
< 1.25V @ 16A
Description/Features
ITSM = 300A
The 25TTS..FP SAFEIR series of silicon
controlled rectifiers are specifically designed for
VRRM 800 to 1600V
medium power switching and phase control
applications. The glass passivation technology
used has reliable operation up to 125° C junction
temperature.
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
andoutputrectifierswhichareavailableinidentical
package outlines.
Fully isolated package (VINS = 2500 VRMS
)
UL E78996 approved
Output Current in Typical Applications
Applications
Single-phase Bridge Three-phase Bridge
Units
Capacitiveinputfilter =55°C, =125°C,
18
22
A
T
T
J
A
commonheatsinkof1°C/W
Major Ratings and Characteristics
Package Outline
Characteristics
25TTS..FP Units
IT(AV) Sinusoidal
waveform
16
A
IRMS
25
upto1600
300
A
V
VRRM
ITSM
VT
V
DRM
/
A
@16A,TJ=25°C
1.25
V
dv/dt
di/dt
TJ
500
V/µs
A/µs
°C
150
TO-220 FULLPAK
-40to125
1
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25TTS..FP SAFEIR Series
Bulletin I2135 rev. D 03/99
Voltage Ratings
VRRM, maximum
peak reverse voltage
V
VDRM , maximum
peak direct voltage
V
IRRM/IDRM
125°C
mA
Part Number
25TTS08FP
25TTS12FP
25TTS16FP
800
1200
1600
800
1200
1600
10
Absolute Maximum Ratings
Parameters
25TTS..FP Units
Conditions
IT(AV) Max.AverageOn-stateCurrent
16
25
A
@TC=85°C,180°conductionhalfsinewave
IRMS Max.RMSOn-stateCurrent
ITSM Max.PeakOneCycleNon-Repetitive
SurgeCurrent
300
10msSinepulse,ratedVRRMapplied
10msSinepulse,novoltagereapplied
10msSinepulse,ratedVRRMapplied
10msSinepulse,novoltagereapplied
t=0.1to10ms,novoltagereapplied
@16A,TJ= 25°C
350
I2t
Max.I2tforfusing
450
A2s
630
I2√t Max.I2√tforfusing
6300
1.25
12.0
1.0
A2√s
V
VTM Max.On-stateVoltageDrop
rt
On-state slope resistance
mΩ
V
TJ = 125°C
VT(TO) ThresholdVoltage
IRM/IDM Max.ReverseandDirect
LeakageCurrent
0.5
mA
TJ = 25 °C
VR = rated VRRM/ VDRM
10
TJ = 125 °C
IH
HoldingCurrent
Typ. Max.
Anode Supply = 6V, Resistive load, Initial IT=1A
25TTS08FP,25TTS12FP
--
100
150
mA
100
25TTS16FP
IL
Max.LatchingCurrent
200
mA
AnodeSupply=6V,Resistiveload
dv/dt Max. Rate of Rise of off-state Voltage
di/dt Max. Rate of Rise of turned-on Current
500
150
V/µs
A/µs
2
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25TTS..FP SAFEIR Series
Bulletin I2135 rev. D 03/99
Triggering
Parameters
25TTS..FP Units
Conditions
PGM Max. peak Gate Power
8.0
2.0
1.5
10
W
PG(AV) Max. average Gate Power
+ IGM Max. paek positive Gate Current
- VGM Max. paek negative Gate Voltage
A
V
IGT
Max. required DC Gate Current
to trigger
60
mA
Anode supply = 6V, resistive load, TJ = - 10°C
Anode supply = 6V, resistive load, TJ = 25°C
Anode supply = 6V, resistive load, TJ = 125°C
Anode supply = 6V, resistive load, TJ = - 10°C
Anode supply = 6V, resistive load, TJ = 25°C
45
20
VGT Max. required DC Gate Voltage
to trigger
2.5
2.0
V
1.0
0.25
2.0
Anode supply = 6V, resistive load, TJ = 125°C
TJ = 125°C, VDRM = rated value
VGD Max. DC Gate Voltage not to trigger
IGD Max. DC Gate Current not to trigger
mA
TJ = 125°C, VDRM = rated value
Switching
Parameters
25TTS..FP Units
Conditions
TJ = 25°C
tgt
trr
tq
Typical turn-on time
0.9
4
µs
Typical reverse recovery time
Typical turn-off time
TJ = 125°C
110
Thermal-Mechanical Specifications
Parameters
25TTS..FP Units
Conditions
TJ
Max.JunctionTemperatureRange
-40to125
-40to125
1.5
°C
Tstg Max.StorageTemperatureRange
RthJC Max.ThermalResistanceJunction
°C/W
DCoperation
toCase
RthJA Max.ThermalResistanceJunction
62
toAmbient
RthCS Typ.ThermalResistanceCase
toHeatsink
1.5
Mountingsurface,smoothandgreased
wt
T
ApproximateWeight
MountingTorque
2(0.07)
6(5)
g(oz.)
Min.
Kg-cm
(Ibf-in)
Max.
12(10)
CaseStyle
TO-220FULLPAK
(94/V0)
3
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25TTS..FP SAFEIR Series
Bulletin I2135 rev. D 03/99
130
120
110
100
90
130
25TTS.. Se rie s
25TTS.. Se rie s
(DC ) = 1.5 °C/ W
R
R
(DC ) = 1.5 °C/ W
thJC
thJC
120
110
100
C o nd u ctio n Pe riod
Co nd uc tio n Ang le
30°
90
80
70
60°
90°
30°
60°
120°
180°
90°
120°
80
180°
20
DC
70
0
5
10
15
20
0
5
10
15
25
30
Ave ra g e O n-sta te C urre nt (A)
Ave ra g e On -sta te Curre nt (A)
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
35
30
25
20
15
10
5
25
20
15
10
5
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
RMS Limit
RMS Lim it
Cond uc tion Ang le
25TTS.. Se rie s
Cond uc tion Pe riod
25TTS.. Se rie s
T = 125°C
J
T
= 125°C
J
0
0
0
5
10
15
20
25
30
0
4
8
12
16
20
Ave ra g e On-sta te Curre nt (A)
Ave ra g e On-sta te C urre nt (A)
Fig. 4 - On-state Power Loss Characteristics
Fig. 3 - On-state Power Loss Characteristics
350
400
At Any Ra te d Loa d C ond ition And With
Ma xim um Non Re p e titive Surg e C urre nt
Ve rsus Pulse Tra in Dura tion. C ontrol
Of C ond uc tio n Ma y No t Be Ma inta ine d .
Ra te d V
Ap p lie d Follo wing Surge .
RRM
Initia l T = 125°C
J
350
Initia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
300
250
200
150
No Volta g e Re a p p lie d
300
250
200
150
100
Ra te d V
Re a p p lie d
RRM
25TTS.. Se rie s
25TTS.. Se rie s
1
10
100
0.01
0.1
1
Num be rO f Eq ua l Am plitude Ha lf Cyc le Curre nt Pulse s (N)
Pulse Tra in Dura tion (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
4
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25TTS..FP SAFEIR Series
Bulletin I2135 rev. D 03/99
1000
100
10
T = 25°C
J
T = 125°C
J
25TTS.. Se rie s
1
0
1
2
3
4
5
Insta nta ne o us On-sta te Vo lta g e (V)
Fig. 7 - On-state Voltage Drop Characteristics
10
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Ste a d y Sta te Va lue
(DC Op e ra tion )
0.1
Sing le Pu lse
25TTS.. Se rie s
1
0.01
0.0001
0.001
0.01
0.1
10
Sq ua re Wa ve Pulse Dura tion (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
100
10
1
Re c ta ngula r g a te p ulse
a )Re c omme nde d loa d line for
ra te d d i/ dt: 10 V, 20 ohm s
(1) PG M = 40 W, tp = 1 ms
(2) PG M = 20 W, tp = 2 ms
(3) PG M = 8 W, tp = 5 ms
(4) PG M = 4 W, tp = 10 ms
tr = 0.5 µs, tp >= 6 µs
b)Re c omme nd e d loa d line fo r
<= 30% ra te d d i/ dt: 10 V, 65 ohm s
tr = 1 µs, tp >= 6 µs
(a )
(b )
(3)
(2) (1)
(4)
VG D
IG D
25TTS.. Se rie s
0.1
Fre q ue nc y Limite d b y PG (AV)
10
0.1
0.001
0.01
1
100
Insta nta ne ous G a te Curre nt (A)
Fig. 9 - Gate Characteristics
5
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25TTS..FP SAFEIR Series
Bulletin I2135 rev. D 03/99
Outline Table
10.6
HOLE ø 3.4
3.1
10.4
2.8
2.6
10°
0.9
0.7
2.54 TYP.
0.48
0.44
2.85
1.15
1.05
2.54
TYP.
TYP.
1.4
1.3
2.65
R0.7 (2 PLACES)
R0.5
Dimensionsinmillimeters(andinches)
5°± 0.5°
5°± 0.5°
Ordering Information Table
Device Code
25
T
T
S
16 FP
2
(A)
1
2
4
5
6
3
1
2
-
-
Current Rating, RMS value
Circuit Configuration:
T = Single Thyristor
Package:
1 (K) (G) 3
3
4
-
-
T = TO-220AC
Type of Silicon:
S = Converter Grade
08 = 800V
12 = 1200V
16 = 1600V
5
6
-
-
Voltage code: Code x 100 = V
TO-220 FULLPAK
RRM
6
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25TTS..FP SAFEIR Series
Bulletin I2135 rev. D 03/99
WORLDHEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.
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http://www.irf.com
Fax-On-Demand: +44 1883 733420
Data and specifications subject to change without notice.
7
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