2N6764SCC5205/013 [INFINEON]

Power Field-Effect Transistor, 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA;
2N6764SCC5205/013
型号: 2N6764SCC5205/013
厂家: Infineon    Infineon
描述:

Power Field-Effect Transistor, 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

局域网 晶体管
文件: 总11页 (文件大小:325K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

2N6764SCC5205/013PBF

Power Field-Effect Transistor, 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
INFINEON

2N6764TXV

Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
MICROSEMI

2N6765

N-Channel Power MOSFETs, 30A, 150V/200V
FAIRCHILD

2N6765

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series
IXYS

2N6766

N-Channel Power MOSFETs, 30A, 150V/200V
FAIRCHILD

2N6766

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series
IXYS

2N6766

N-CHANNEL MOSFET
MICROSEMI

2N6766SCC5205/013

Power Field-Effect Transistor, 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
INFINEON

2N6766SCC5205/013PBF

Power Field-Effect Transistor, 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
INFINEON

2N6766T1

N-CHANNEL MOSFET
MICROSEMI

2N6766T1E3

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
MICROSEMI

2N6766TXV

Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE,
MICROSEMI