2N6802SCC5205/019 [INFINEON]

Power Field-Effect Transistor, 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF;
2N6802SCC5205/019
型号: 2N6802SCC5205/019
厂家: Infineon    Infineon
描述:

Power Field-Effect Transistor, 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

文件: 总11页 (文件大小:325K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

2N6802U

N-CHANNEL MOSFET
MICROSEMI

2N6804

P-CHANNEL MOSFET
MICROSEMI

2N6804E3

Power Field-Effect Transistor, 11A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, ROHS COMPLIANT, METAL CAN, TO-3, 2 PIN
MICROSEMI

2N6804PBF

Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
INFINEON

2N6804SCC5206/004

Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
INFINEON

2N6804SCC5206/004PBF

Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
INFINEON

2N6804_12

This 2N6804 switching transistor is military qualified up to the JANTXV level for high-reliability applications.
MAS

2N6806

TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 6.5A I(D) | TO-204AA
ETC

2N6806SCC5206/004

Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
INFINEON

2N6806SCC5206/004PBF

Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
INFINEON

2N681

SILICON CONTROLLED RECTIFIER 25 AMPS, 25 THRU 800 VOLTS
CENTRAL

2N681

25 and 35 Amp RMS SCRs
KNOX