2N6849 [INFINEON]
-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6849 with Hermetic Packaging;
| 型号： | 2N6849 |
| 厂家： | 
Infineon |
| 描述： | -100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6849 with Hermetic Packaging |
| 文件： | 总7页 (文件大小：958K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-90550G
IRFF9130
JANTX2N6849
JANTXV2N6849
JANS2N6849
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTORS
100V, P-CHANNEL
REF: MIL-PRF-19500/564
THRU-HOLE TO-205AF (TO-39)
Product Summary
Part Number
BVDSS
RDS(on)
ID
IRFF9130
-100V
-6.5A
0.30
Description
Features
The HEXFET® technology is the key to International
Rectifier’s HiRel advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on state
resistance combined with high trans conductance.
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
ESD Rating: Class 1C per MIL-STD-750,
Method 1020
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching and temperature stability of the
electrical parameters.
They are well suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifiers
and high energy pulse circuits.
Absolute Maximum Ratings
Symbol
Value
Parameter
Units
ID1 @ VGS = -10V, TC = 25°C Continuous Drain Current
ID2 @ VGS = -10V, TC = 100°C Continuous Drain Current
-6.5
A
-4.1
-25
25
IDM @ TC = 25°C
PD @ TC = 25°C
Pulsed Drain Current
W
W/°C
V
Maximum Power Dissipation
Linear Derating Factor
0.20
± 20
92
VGS
EAS
Gate-to-Source Voltage
Single Pulse Avalanche Energy
mJ
A
IAR
EAR
Avalanche Current
-6.5
2.5
mJ
V/ns
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
dv/dt
-5.5
TJ
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
-55 to + 150
TSTG
°C
g
300 (0.063 in. /1.6 mm from case for 10s)
0.98 (Typical)
For Footnotes, refer to the page 2.
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2019-02-27
International Rectifier HiRel Products, Inc.
IRFF9130
JANTX2N6849/JANTXV2N6849/JANS2N6849
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
BVDSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Min. Typ. Max. Units
Test Conditions
VGS = 0V, ID = -1.0mA
-100 ––– –––
––– -0.10 –––
––– ––– 0.30
––– ––– 0.320
V
BVDSS/TJ
V/°C Reference to 25°C, ID = -1.0mA
V
GS = -10V, ID2 = -4.1A
GS = -10V, ID1 = -6.5A
RDS(on)
Static Drain-to-Source On-Resistance
V
V
VGS(th)
IDSS
Gate Threshold Voltage
-2.0 ––– -4.0
––– ––– -25
––– ––– -250
––– ––– -100
––– ––– 100
14.7 ––– 34.8
VDS = VGS, ID = -250µA
VDS = -80V, VGS = 0V
DS = -80V,VGS = 0V,TJ =125°C
VGS = -20V
GS = 20V
Zero Gate Voltage Drain Current
µA
V
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
nA
nC
V
QG
QGS
QGD
td(on)
tr
ID1 = -6.5A
VDS = -50V
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
1.0
2.0
––– –––
–––
––– 23.1
60
6.8
V
GS = -10V
VDD = -40V
ID1 = -6.5A
RG = 7.5
––– ––– 140
––– ––– 140
––– ––– 140
ns
td(off)
tf
V
GS = -10V
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm/ 0.25
in from package) with Source wire
internally bonded from Source pin to Drain
pin
Ls +LD
Total Inductance
–––
7.0
–––
nH
pF
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 800 –––
––– 350 –––
––– 125 –––
VGS = 0V
VDS = -25V
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Min. Typ. Max. Units
Test Conditions
IS
––– ––– -6.5
A
ISM
––– ––– -25
VSD
trr
––– ––– -4.3
––– ––– 250
V
TJ = 25°C,IS = -6.5A, VGS = 0V
Reverse Recovery Time
ns TJ = 25°C, IF = -6.5A, VDD ≤ -50V
µC di/dt = -100A/µs
Qrr
Reverse Recovery Charge
––– –––
3.0
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ton
Forward Turn-On Time
Thermal Resistance
Symbol
Parameter
Min.
Typ.
Max.
Units
Junction-to-Case
–––
–––
5.0
RJC
RJA
°C/W
Junction-to-Ambient (Typical Socket Mount)
–––
–––
175
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = -25V, starting TJ = 25°C, Peak IL = -6.5A, VGS = -10V
ISD -6.5A, di/dt -140A/µs, VDD -100V, TJ 150°C, Suggested RG = 7.5 Ω
Pulse width 300 µs; Duty Cycle 2%
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2019-02-27
International Rectifier HiRel Products, Inc.
IRFF9130
JANTX2N6849/JANTXV2N6849/JANS2N6849
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
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2019-02-27
International Rectifier HiRel Products, Inc.
IRFF9130
JANTX2N6849/JANTXV2N6849/JANS2N6849
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
Fig 9. Maximum Drain Current Vs.
Fig 10. Maximum Avalanche Energy
Case Temperature
Vs. Drain Current
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
International Rectifier HiRel Products, Inc.
4
2019-02-27
IRFF9130
JANTX2N6849/JANTXV2N6849/JANS2N6849
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
Fig 13b. Gate Charge Test Circuit
Fig 13a. Gate Charge Waveform
Fig 14a. Switching Time Test Circuit
Fig 14b. Switching Time Waveforms
2019-02-27
5
International Rectifier HiRel Products, Inc.
IRFF9130
JANTX2N6849/JANTXV2N6849/JANS2N6849
Case Outline and Dimensions - TO-205AF (TO-39)
www.infineon.com/irhirel
Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555
Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776
San Jose, California 95134, USA Tel: +1 (408) 434-5000
Data and specifications subject to change without notice.
6
2019-02-27
International Rectifier HiRel Products, Inc.
IRFF9130
JANTX2N6849/JANTXV2N6849/JANS2N6849
IMPORTANT NOTICE
The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The
data contained herein is a characterization of the component based on internal standards and is intended to
demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and
analysis to determine suitability in the application environment to confirm compliance to your system requirements.
With respect to any example hints or any typical values stated herein and/or any information regarding the application of
the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without
limitation warranties on non- infringement of intellectual property rights and any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s product and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any
customer’s technical departments to evaluate the suitability of the product for the intended applications and the
completeness of the product information given in this document with respect to applications.
For further information on the product, technology, delivery terms and conditions and prices, please contact your local
sales representative or go to (www.infineon.com/hirel).
WARNING
Due to technical requirements products may contain dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies office.
7
2019-02-27
International Rectifier HiRel Products, Inc.
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