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2N6849U [MICROSEMI]

P-CHANNEL MOSFET; P沟道MOSFET
2N6849U
型号: 2N6849U
厂家: Microsemi    Microsemi
描述:

P-CHANNEL MOSFET
P沟道MOSFET

晶体 晶体管 开关
文件: 总4页 (文件大小:149K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

2N6849_09

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14 MICROSEMI

2N684A

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28 CENTRAL

2N684LEADFREE

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3 CENTRAL

2N684MPBF

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3 VISHAY

2N684PBF

Silicon Controlled Rectifier, 25A I(T)RMS, 150V V(DRM), 150V V(RRM), 1 Element, TO-208AA

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8 INFINEON

2N684PBFREE

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4 CENTRAL

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SILICON CONTROLLED RECTIFIER 25 AMPS, 25 THRU 800 VOLTS

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13 CENTRAL

2N685

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34 KNOX

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25 and 35 Amp RMS SCRs

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36 INFINEON

2N685

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9 NJSEMI

2N6850

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20 ETC

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91 SEME-LAB

2N6851EA

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1 INFINEON

2N6851EB

Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

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3 INFINEON

2N6851EC

Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

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1 INFINEON

2N6851ED

Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,

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0 INFINEON

2N6851EDPBF

Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

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0 INFINEON

2N6851EPBF

Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

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1 INFINEON

2N6851PBF

Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

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20 INFINEON

2N6851SCC5206/003

Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,

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1 INFINEON