2N685 [INFINEON]
25 and 35 Amp RMS SCRs; 25和35 AMP RMS SCRS
| 型号： | 2N685 |
| 厂家： | 
Infineon |
| 描述： | 25 and 35 Amp RMS SCRs |
| 文件： | 总7页 (文件大小：212K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
相关型号：
2N6851EA
Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
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2N6851EB
Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
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2N6851EC
Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
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2N6851ED
Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
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2N6851EDPBF
Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
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2N6851EPBF
Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
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2N6851PBF
Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
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2N6851SCC5206/003
Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
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2N6851TX
Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
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2N6851TXV
Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
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