2N7628M1 [INFINEON]
Small Signal Field-Effect Transistor, 0.71A I(D), 60V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC PACKAGE-14;
| 型号： | 2N7628M1 |
| 厂家： | 
Infineon |
| 描述： | Small Signal Field-Effect Transistor, 0.71A I(D), 60V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC PACKAGE-14 CD 开关 晶体管 |
| 文件： | 总9页 (文件大小：216K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-97200B
2N7628M1
IRHLG7970Z4
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (MO-036AB)
60V, Quad P-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID
IRHLG7970Z4 100K Rads (Si) 1.25Ω -0.71A
IRHLG7930Z4 300K Rads (Si) 1.25Ω -0.71A
MO-036AB
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable operating
limits over the full operating temperature and post
radiation. This is achieved while maintaining single
event gate rupture and single event burnout immunity.
Features:
n
5V CMOS and TTL Compatible
n
n
n
n
n
n
n
n
n
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Complimentary N-Channel Available -
IRHLG770Z4
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Absolute Maximum Ratings (Per Die)
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= -4.5V, T =25°C
Continuous Drain Current
-0.71
D
D
GS
GS
C
A
I
= -4.5V, T =100°C Continuous Drain Current
-0.45
-2.84
1.0
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
W
W/°C
V
D
C
0.01
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±10
GS
E
21
mJ
A
AS
I
-0.71
0.1
AR
E
AR
dv/dt
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
mJ
V/ns
-14
T
-55 to 150
J
T
Storage Temperature Range
°C
g
STG
Lead Temperature
Weight
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
For footnotes refer to the last page
www.irf.com
1
04/01/08
IRHLG7970Z4, 2N7628M1
Pre-Irradiation
Electrical Characteristics For Each P-Channel Device @Tj = 25°C (Unless Otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
-60
—
—
V
V
= 0V, I = -250µA
D
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
-0.08
—
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
1.25
Ω
V = -4.5V, I = -0.45A
GS D
DS(on)
Ã
V
Gate Threshold Voltage
-1.0
—
0.9
—
—
3.07
—
—
—
-2.0
—
—
-1.0
-10
V
mV/°C
S
V
= V , I = -250µA
GS(th)
DS
GS
D
∆V
/∆T Gate Threshold Voltage Coefficient
GS(th)
J
g
fs
Forward Transconductance
V
= -10V, I
= -0.45A Ã
DS
DS
I
Zero Gate Voltage Drain Current
V
= -48V ,V = 0V
DSS
DS GS
—
V
= -48V,
µA
DS
= 0V, T =125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
-100
100
2.8
1.7
0.8
17
20
27
23
—
V
V
= -10V
= 10V
GSS
GSS
GS
GS
nA
nC
Q
Q
Q
V
= -4.5V, I = -0.71A
g
gs
gd
d(on)
r
GS D
V
= -30V
DS
t
t
t
t
V
DD
= -30V, I = -0.71A,
D
ns
V
= -5.0V, R = 24Ω
GS G
d(off)
f
L
+ L
Measured from Drain lead (6mm /0.25in
from pack.) to Source lead (6mm/0.25in
from pack.)with Source wire internally
bonded from Source pin to Drain pad
S
D
nH
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
138
39
6.7
—
—
—
V
= 0V, V
= -25V
f = 1.0MHz
iss
oss
rss
GS DS
pF
R
g
—
52.4
—
Ω
f = 1.0MHz, open drain
Gate Resistance
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
-0.71
-2.84
-5.0
30
S
A
I
SM
V
t
Q
V
ns
nC
T = 25°C, I = -0.71A, V
= 0V Ã
j
SD
rr
RR
S
GS
T = 25°C, I = -0.71A, di/dt ≤−100A/µs
j
F
11
V
≤ -25V Ã
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance (Per Die)
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Ambient
—
—
125
°C/W
Typical socket mount
thJA
Note: Corresponding Spice and Saber models are available International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHLG7970Z4, 2N7628M1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each P-Channel Device @Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 300K Rads (Si)1 Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
-60
-1.0
—
—
—
—
V
V
= 0V, I = -250µA
D
DSS
GS
GS
V
V
-2.0
-100
100
-1.0
= V , I = -250µA
GS(th)
DS
D
I
V
V
GS
= -10V
= 10V
GSS
GS
nA
µA
I
GSS
I
V
= -48V, V = 0V
GS
DSS
DS
GS
GS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source On-state
Resistance (MO-036)
—
1.20
Ω
V
= -4.5V, I = -0.45A
D
R
DS(on)
—
—
1.25
-5.0
Ω
V
= -4.5V, I = -0.45A
D
V
SD
Diode Forward Voltage
V
V
= 0V, I = -0.71A
GS
D
1. Part numbers IRHLG7970Z4, IRHLG7930Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area (Per Die)
Ion
LET
Energy Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
(µm)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V
-60
-60
-60
2V
-60
-60
-60
4V
-60
-60
-60
5V
-60
-60
-60
6V
-60
-60
-
7V
-50
-20
-
8V
-35
-
10V
Br
I
37
60
84
305
370
390
39
34
30
-25
-
-
Au
-
-70
-60
-50
-40
-30
-20
-10
0
Br
I
Au
0
1
2
3
4
5
6
7
8
9
10
VGS
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHLG7970Z4, 2N7628M1
Pre-Irradiation
10
10
VGS
VGS
-10V
TOP
-10V
TOP
-5.0V
-4.5V
-3.0V
-2.75V
-2.5V
-2.25V
-5.0V
-4.5V
-3.0V
-2.75V
-2.5V
-2.25V
BOTTOM -2..0V
BOTTOM -2..0V
1
1
-2.0V
-2.0V
µ
20 s PULSE WIDTH
Tj = 25°C
µ
20 s PULSE WIDTH
Tj = 150°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
-V
, Drain-to-Source Voltage (V)
-V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1.5
1.0
0.5
10
I
= -0.71A
D
T
= 25°C
T
J
= 150°C
J
1
V
= -25V
DS
V
= -4.5V
0µ
s PULSE WIDTH
2
GS
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
2
2.5
3
3.5
-V , Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHLG7970Z4, 2N7628M1
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
I
= -0.71A
D
T
= 150°C
J
T
= 150°C
= 25°C
J
T
= 25°C
J
T
J
Vgs = -4.5V
2.5 3.0
2
3
4
5
6
7
8
9
10 11 12
0
0.5
1.0
1.5
2.0
-I , Drain Current (A)
-V
Gate -to -Source Voltage (V)
D
GS,
Fig 5. Typical On-Resistance Vs
Fig 6. Typical On-Resistance Vs
GateVoltage
DrainCurrent
75
70
65
60
55
3.0
I
= -1.0mA
D
2.5
2.0
1.5
1.0
0.5
0.0
I
= -50µA
D
I
I
I
= -250µA
= -1.0mA
= -150mA
D
D
D
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
T
J
T
J
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Fig 8. Typical Threshold Voltage Vs
Temperature
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5
IRHLG7970Z4, 2N7628M1
Pre-Irradiation
12
10
8
240
V
= 0V,
= C
f = 1 MHz
GS
V
V
V
= -48V
I
= -0.71A
DS
DS
DS
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= -30V
= -12V
= C
200
160
120
80
rss
oss
gd
= C + C
ds
gd
C
iss
6
C
oss
4
2
40
FOR TEST CIRCUIT
SEE FIGURE 17
C
rss
0
0
1
10
100
0
1
2
3
4
5
6
Q
Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
G,
Fig 9. Typical Capacitance
Vs.Drain-to-SourceVoltage
Fig 10. Typical Gate Charge Vs.
Gate-to-SourceVoltage
10
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
T
= 150°C
J
1
0.1
°C
T
=
25
J
V
= 0V
3.5
GS
0.01
0
0.5
-V
1
1.5
2
2.5
3
4
25
50
T
75
100
125
150
, Source-to-Drain Voltage (V)
, Case Temperature (°C)
SD
C
Fig 11. Typical Source-Drain Diode
Fig 12. Maximum Drain Current Vs.
ForwardVoltage
CaseTemperature
6
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Pre-Irradiation
IRHLG7970Z4, 2N7628M1
50
40
30
20
10
0
10
1
I
OPERATION IN THIS AREA
D
LIMITED BY R (on)
DS
TOP
-0.32A
-0.45A
-0.71A
BOTTOM
1ms
0.1
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
25
50
75
100
125
150
1
10
100
Starting T , Junction Temperature (°C)
J
-V
, Drain-to-Source Voltage (V)
DS
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
1000
100
10
D = 0.50
0.20
0.10
0.05
SINGLE PULSE
( THERMAL RESPONSE )
P
0.02
DM
0.01
1
t
1
t
2
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig15. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
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7
IRHLG7970Z4, 2N7628M1
Pre-Irradiation
L
V
I
DS
AS
D.U.T
R
.
G
V
DD
I
A
AS
DRIVER
-20V
VGS
0.01
t
Ω
p
t
p
15V
V
(BR)DSS
Fig 16a. Unclamped Inductive Test Circuit
Fig16b. UnclampedInductiveWaveforms
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
-4.5V
.2µF
12V
.3µF
-
Q
Q
GD
GS
V
+
DS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 17b. Gate Charge Test Circuit
Fig 17a. Basic Gate Charge Waveform
RD
VDS
t
t
r
t
t
f
d(on)
d(off)
V
GS
VGS
10%
VDD
D.U.T.
RG
-
+
VGS
90%
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
DS
Fig 18b. Switching Time Waveforms
Fig 18a. Switching Time Test Circuit
8
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Pre-Irradiation
Footnotes:
IRHLG7970Z4, 2N7628M1
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
-10 volt V
applied and V
Á V
= -25V, starting T = 25°C, L= 85mH
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
J
Peak I = -0.71A, V
= -10V
≤ -0.71A, di/dt ≤ -164A/µs,
L
GS
Å Total Dose Irradiation with V Bias.
Â
I
SD
DS
= 0 during
-48 volt V
applied and V
V
≤ -60V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
DD
J
Case Outline and Dimensions — MO-036AB
Q4
Q1
Q3
Q2
Q3
Q2
Q4
Q1
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/2008
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9
相关型号：
2N7630M2
Small Signal Field-Effect Transistor, 0.56A I(D), 60V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, FLAT PACK-14
INFINEON
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