30CLJQ100B_技术文档

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 25 December 2013.

INCH-POUND

MIL-PRF-19500/681C

25 September 2013

SUPERSEDING

MIL-PRF-19500/681B

5 December 2007

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP,

TYPE 1N6843CCU3, JAN, JANTX, JANTXV, AND JANS

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for silicon, Schottky dual power rectifier

diodes for use in high frequency switching power supplies and resonant power converters. Four levels of product

assurance are provided for each device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1 (U3).

1.3 Maximum ratings. Unless otherwise specified, T = +25°C.

C

Column 1

Type

Column 2

Column 3

(1) (2)

Column 4

Column 5

Column 6

Column 7

Column 8

V

RWM

I

(2)

T

STG

and

C

J

at 5 V

O

FSM

t = 8.3 ms,

R

θJC

R

θJC

(3)

T

=

(2)

C

p

T

J

+25°C

T

= +25°C

C

pF

V dc

100

A dc

15

A (pk)

100

°C/W

°C

1N6843CCU3

3.5

1.75

-65 to +150

275

(1) See temperature-current derating curves in figure 2.

(2) Each leg.

(3) Entire package.

* 1.4 Primary electrical characteristics. R

= 1.75°C/W maximum for entire package. R

= 40°C/W maximum

θJC

θJA

each leg. R

= 3.5°C/W maximum each leg, see figure 3.

θJC

* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,

ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact

information can change, you may want to verify the currency of this address information using the ASSIST

Online database at https://assist.dla.mil/.

AMSC N/A

FSC 5961

MIL-PRF-19500/681C

U3

Dimensions

Inches Millimeters

Ltr

Min

Max

.405

.301

.124

.020

.230

.125

Min

Max

10.29

7.65

3.15

0.51

5.84

3.18

BL

BW

CH

.395

.291

.112

.010

.220

.115

10.03

7.39

2.84

0.25

5.59

2.92

LH

LL1

LL2

LS1

LS2

LW1

LW2

Q1

.150 BSC

.075 BSC

3.81 BSC

1.91 BSC

.281

.291

.100

7.14

7.39

2.54

.090

.030

2.29

0.76

Q2

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.

FIGURE 1. Physical dimensions.

2

MIL-PRF-19500/681C

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. While every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this

specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-19500

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-750 Test Methods for Semiconductor Devices.

-

Semiconductor Devices, General Specification for.

-

* (Copies of these documents are available online at http://quicksearch.dla.mil/ or https://assist.dla.mil/ or from the

Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

* 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the

text of this document and the references cited herein, the text of this document takes precedence. Nothing in this

document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500.

3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in

MIL-PRF-19500, and on figure 1 herein.

3.4.1 Polarity. Polarity and terminal configuration shall be in accordance with figure 1.

3.4.2 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.

Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).

3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I herein.

3.6 Electrical test requirements. The electrical test requirements shall be as specified in tables I and II herein.

3.7 Marking. Marking shall be in accordance with MIL-PRF-19500 and herein.

3

MIL-PRF-19500/681C

3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4 and tables I and II herein).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified

herein.

4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In

case qualification was awarded to a prior revision of the specification sheet that did not request the performance of

table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on

the first inspection lot of this revision to maintain qualification.

* 4.3 Screening (JANS, JANTXV, and JANTX levels). Screening shall be in accordance with table E-IV of

MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen

(see table E-IV of

MIL-PRF-19500)

Measurement

JANS level

JANTX and JANTXV levels

Method 4066 of MIL-STD-750, condition A,

one pulse, I = 0, V

Method 4066 of MIL-STD-750, condition A,

= 0, see 1.3 herein, one pulse, I = 0, V

= 0, see 1.3

(1) (2) 3b

O

RWM

O

RWM

column 4.

herein, column 4.

Method 3101 of MIL-STD-750, thermal

impedance (see 4.3.2)

Method 4064 of MIL-STD-750, inductive

avalanche energy test (see 4.3.3)

Not applicable

Method 3101 of MIL-STD-750, thermal

impedance (see 4.3.2)

Method 4064 of MIL-STD-750, inductive

avalanche energy test (see 4.3.3)

Not applicable

(1) 3c

3d

9, 10

11

12

V

and I

V

and I

R1

F2

See 4.3.1

Subgroup 2 and 3, of table I herein, V and

R1

F2

See 4.3.1

Subgroup 2, of table I herein excluding

F2

thermal impedance; V and I

;

I

, excluding thermal impedance;

R1

F2

R1

∆V = ±50 mV (pk);

13

F2

∆ I

= ±100 percent from the initial value or

∆ I

= ±100 percent from the initial value or

R1

±10 uA whichever is greater.

R1

±10 uA whichever is greater.

(1) Thermal impedance and surge shall be performed any time after screen 3a and before screen 13.

(2) Surge shall precede thermal impedance.

4.3.1 Power burn-in conditions. Burn-in conditions are as follows: Method 1038 of MIL-STD-750, test

condition A. T = +125°C; V = 80 V dc.

J

R

4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method

3101 of MIL-STD-750 using the guidelines in that method for determining I , I , t , t (and V where

M H H MD

C

appropriate). Measurement delay time (t

) = 70 µs max. See table III, group E, subgroup 4 herein.

MD

4

MIL-PRF-19500/681C

* 4.3.3 Inductive avalanche energy test. The inductive avalanche energy test is to be performed in accordance with

method 4064 of MIL-STD-750 using the circuit as shown on figure 4 or equivalent. The Schottky rectifier under test

must be capable of absorbing the reverse energy, as follows: I

= 1 A, V = 100 V minimum, L = 100 µH.

RM

RSM

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with appendix E, table E-V of

MIL-PRF-19500, and table I herein. Electrical measurements (end-points) and delta requirements shall be in

accordance with the applicable steps of table II herein.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for

subgroup testing in tables E-VIA (JANS) and E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and as follows.

Electrical measurements (end-points) shall be in accordance with table I, subgroup 2, forward voltage test (V ) and

F1

reverse leakage test (I ) herein. Delta measurements shall be in accordance with table II herein.

R1

4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500.

Subgroup

B4

Method

1037

Condition

∆T = +85°C, I = 2 A minimum for 2,000 cycles.

C

F

B5

1038

Condition A, V =80 V dc, T =+125C, t =240 hrs min; (heat sinking allowed).

R J

4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500.

Subgroup

B3

Method

1037

Condition

∆T = +85°C minimum, I = 2 A minimum for 2,000 cycles.

F

C

* 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with

table I, subgroup 2, forward voltage test (V ) and reverse leakage test (I ) herein. Delta measurements shall be in

F1

R1

accordance with table II herein.

Subgroup

C2

Method

2036

Condition

Not applicable.

*

C5

3101

Limit for thermal resistance is 3.5°C/W for each leg.

∆T = +85°C, minimum, I = 2 A minimum for 6,000 cycles.

C6

1037

C

F

4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the tests and conditions

specified for subgroup testing in table E-IX of MIL-PRF-19500, and table III herein.

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.

5

MIL-PRF-19500/681C

* TABLE I. Group A inspection.

Inspection

1/

MIL-STD-750

Conditions

Limits

Min Max

Symbol

Unit

Method

2071

Subgroup 1

Visual and mechanical

examination

Subgroup 2

Thermal impedance 2/

Forward voltage

3101

4011

See 4.3.2

Pulsed test (see 4.5.1)

Z

ºC/W

ΘJX

*

I

= 5 A (pk)

= 15 A (pk)

= 30 A (pk)

V

F1

V

F2

V

F3

0.77

1.03

1.27

V

F

Reverse current

Subgroup 3

4016

V

R

= 100 V, DC method

I

0.010

mA dc

R1

High temperature

operation:

T

= +125 °C

C

Forward voltage

Reverse current

Pulsed test (see 4.5.1)

I

= 5 A (pk)

= 15 A (pk)

= 30 A (pk)

V

0.60

0.77

0.95

V

F

F4

F5

F6

4016

4011

V

R

= 100 V, DC method

I

5.0

mA

R2

Low temperature

operation:

T

= -55°C

C

Forward voltage

Pulsed test (see 4.5.1)

I

= 5 A (pk)

= 15 A (pk)

= 30 A (pk)

V

F7

V

F8

V

F9

0.86

1.18

1.43

V

F

Subgroup 4

pF

Junction capacitance

4001

V

= 5 V dc, f = 1 MHz,

C

J

275

R

= 50 mV (p-p)

SIG

Subgroup 5

Not applicable

See footnotes at end of table.

6

MIL-PRF-19500/681C

* TABLE I. Group A inspection – Continued.

Inspection

1/

MIL-STD-750

Conditions

Symbol

Limits

Unit

Method

4066

Min

Max

Subgroup 6

Surge

See column 4 of 1.3, ten surges

each leg, 1 min between surges,

(see 4.5.1)

Electrical

See table I, subgroup 2 herein

measurements

Subgroup 7

Dielectric withstanding

voltage

1016

4023

V

= 500 V dc; all leads shorted;

DWV

10

µA

R

measure from leads to case

Scope display

evaluation

Stable only

Electrical

See table I, subgroup 2 herein.

measurements

1/ For sampling plan, see MIL-PRF-19500.

2/ This test required for the following end-point measurements only:

Group B, subgroups 3 and 5 (JANS).

*

Group B, subgroups 2 and 3 (JAN, JANTX, and JANTXV).

Group C, subgroup 2 and 6.

Group E, subgroup 1.

7

MIL-PRF-19500/681C

* TABLE II. Groups B, C, and E delta requirements. 1/ 2/ 3/ 4/ 5/ 6/

MIL-STD-750

Step

1.

Inspection

Symbol

Limits

Unit

Method

4011

Conditions

I = 15 A (pk)

F

pulsed (see 4.5.1)

Min Max

±50 mV dc from initial

reading.

Forward voltage

Reverse current

∆V

F2

2.

4016

Vr = 100 V

∆I

±100 pecent from initial

reading or ±10uA

R1

whichever is greater.

1/ For each leg.

2/ The delta measurements for table E-VIA (JANS) of MIL-PRF-19500 are subgroups 4 and 5, see table II

herein, both steps.

3/ The delta measurements for table E-VIB (JAN, JANTX and JANTXV) of MIL-PRF-19500 are subgroups 3 and

6, see table II herein, both steps.

4/ The delta measurements for table E-VII of MIL-PRF-19500 are subgroup 6, see table II herein, both

steps for all levels.

5/ Devices which exceed the table I limits for this test shall not be accepted.

6/ The delta measurements for table E-IX of MIL-PRF-19500 are subgroups 1 and 2, see table II herein,

both steps.

8

MIL-PRF-19500/681C

* TABLE III. Group E inspection (all quality levels) - for qualification and requalification only.

MIL-STD-750

Qualification

Inspection

Method

Conditions

Subgroup 1

n = 45, c = 0

Temperature cycling

(air to air)

1051

1071

Test condition G, 500 cycles, -55°C to +150°C.

Hermetic seal

Electrical

See table I, subgroup 2, and table II.

measurements

Subgroup 2

Life test

n = 45, c = 0

1048

t = 1,000 hours, T = +125°C, V = 80 percent rated voltage

C

R

(see 1.3, column 2 herein).

Electrical

See table I subgroup 2, and table II.

measurements

Subgroup 4

Thermal impedance

curves

See MIL-PRF-19500.

Subgroup 7

Surge

n = 5, c = 0

4066

Condition A, T = +25°C I

= 100 A, 10 surges of 8.3 ms

A

FSM

superimposed on I . V = 0; I = 10 A pk half sine wave,

O

R

O

continuous, performed on each leg.

Electrical

See table I, subgroup 2 (except thermal impedance).

measurements

9

MIL-PRF-19500/681C

TEMPERATURE-CURRENT DERATING CURVE

1N6843CCU3

DC OPERATION

= 3.5°C/W

T

(°C) (CASE)

C

R

ΘJC

NOTES:

1. All devices are capable of operating at ≤ T specified on this curve. Any parallel line to this curve will intersect

J

the appropriate current for the desired maximum T allowed.

J

2. Derate design curve constrained by the maximum junction temperature (T ≤ 150°C) and current rating

J

specified. (See 1.3 herein.)

3. Derate design curve chosen at T ≤ 125°C, where the maximum temperature of electrical test is performed.

J

4. Derate design curves chosen at T ≤, 125°C, and 110°C to show current rating where most users want to limit

J

T in their application.

J

FIGURE 2. Temperature-current derating curve (for each leg).

10

MIL-PRF-19500/681C

10.00

1.00

0.10

Notes:

1. Duty factor D = t 1/t2

2. Peak T = Pdm x Z

+T

C

J

ΘJC

D=0.5

D=0.4

D=0.3

D=0.2

D=0.1

Single Pulse

(Thermal Resistance)

0.00001

0.0001

0.001

0.01

0.1

1

t1, RECTANGULAR PULSE DURATION (Sec)

FIGURE 3. Thermal impedance (for each leg).

11

MIL-PRF-19500/681C

Input pulse R = 50 ohms, 1 watt

in

V

Z

= 10 Volts, R = 0.1 ohms, 1 watt

S

G

= 50 ohms

L = 100µH

P.W. ≈ 30 µs

Duty cycle ≤ 1 percent, T = IRF250/2N6766 or equivalent

Procedure:

1. With S open, adjust pulse width to test current of 1 amp across R .

S

2. Close S, verify test current with current sense.

3. Read peak output voltage (see 4.3.3).

FIGURE 4. Peak reverse energy test circuit.

12

MIL-PRF-19500/681C

5. PACKAGING

5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order

(see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel

need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are

maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or

within the Military Service’s system commands. Packaging data retrieval is available from the managing Military

Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible

packaging activity.

6. NOTES

(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.

The notes specified in MIL-PRF-19500 are applicable to this specification.)

6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design

applications and logistic support of existing equipment.

6.2 Acquisition requirements. Acquisition documents should specify the following:

a. Title, number, and date of this specification.

b. Packaging requirements (see 5.1).

c. Lead finish (see 3.4.2).

d. Product assurance level and type designator.

* 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are,

at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not

such products have actually been so listed by that date. The attention of the contractors is called to these

requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal

Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the

products covered by this specification. Information pertaining to qualification of products may be obtained from DLA

Land and Maritime, ATTN: VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail vqe.chief@dla.mil. An online

listing of products qualified to this specification may be found in the Qualified Products Database (QPD) at

https://assist.dla.mil.

6.4 Cross reference substitution list. A PIN for PIN replacement table follows and these devices are directly

interchangeable. The 1N6843CCU3 is directly substitutable for the 1N6843.

Non-preferred PIN

Preferred PIN

30CLJQ100

1N6843

1N6843U3

JANS, JANTXV, JANTX, JAN1N6843CCU3

6.5 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where

changes from the previous issue were made. This was done as a convenience only and the Government assumes

no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the

requirements of this document based on the entire content irrespective of the marginal notations and relationship to

the last previous issue.

13

MIL-PRF-19500/681C

Custodians:

Army - CR

Preparing activity:

DLA - CC

Navy - EC

Air Force - 85

NASA - NA

DLA - CC

(Project 5961-2013-030)

Review activities:

Army - MI

* NOTE: The activities listed above were interested in this document as of the date of this document. Since

organizations and responsibilities can change, you should verify the currency of the information above using the

ASSIST Online database at https://assist.dla.mil/.

14


型号：	30CLJQ100B
厂家：	Infineon
描述：	30A 100V Hi-Rel Schottky Common Cathode Diode in a SMD-0.5 package DLA Number 1N6843CCU3 - Lead attach and formed MIL-PRF-19500/681
文件：	总14页 (文件大小：192K)
中文：	中文翻译
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