30CLJQ150SCSA [INFINEON]

30A 150V Hi-Rel Schottky Common Cathode Diode in a SMD-0.5 package DLA Number 1N7058CCU3 - Screening Level Space Lead Form Down MIL-PRF-19500/731;


型号：	30CLJQ150SCSA
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描述：	30A 150V Hi-Rel Schottky Common Cathode Diode in a SMD-0.5 package DLA Number 1N7058CCU3 - Screening Level Space Lead Form Down MIL-PRF-19500/731
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INCH-POUND

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 5 May 2010.

MIL-PRF-19500/731A

5 February 2010

SUPERSEDING

MIL-PRF-19500/731

26 March 2007

PERFORMANCE SPECIFICATION SHEET

* SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP,

TYPES 1N7058CCU3, 1N7058CCU3C, AND SINGLE DIE, TYPE 1N7038U3, JAN, JANTX, JANTXV, AND JANS

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein

shall consist ofthis specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for silicon, Schottky dual and single power

rectifier diodes for use in high frequency switching power supplies and resonant power converters. Four levels of

product assurance are provided for each device type as specified in MIL-PRF-19500.

* 1.2 Physical dimensions. See figure 1, U3 and U3C (with ceramic lid) package.

* 1.3 Maximum ratings. Unless otherwise specified, T = +25°C.

Column 1

Types

Column 2

Column 3

Column 4

Column 5

Column 6

(1)(2)

STG

RWM

FSM

ΘJC

t = 8.3 ms

(2)

(3)

and

= +100°C

= +25°C

V dc

150

A dc

A (pk)

140 (2)

°C/W

1.82

°C/W

°C

1N7038U3

-65 to +150

1N7058CCU3

1N7058CCU3C

150

130 (2)

1.75

3.5

(1) See temperature-current derating curves in figures 2 and 3.

(2) Entire package.

(3) Each leg.

* 1.4 Primary electrical characteristics.

a. R

= 1.82°C/W maximum for 1N7038U3 (figure 4).

ΘJC

b. R

= 1.75°C/W maximum entire package for 1N7058CCU3 and 1N7058CCU3C (figure 5); R

ΘJC

3.5°C/W maximum each leg.

Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,

Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to

semiconductor@dscc.dla.mil . Since contact information can change, you may want to verify the currency of

this address information using the ASSIST Online database at https://assist.daps.dla.mil .

AMSC N/A

FSC 5961

MIL-PRF-19500/731A

Dimensions

Inches Millimeters

Min Max

10.03 10.29

Ltr

Note

Min

.395

.291

.108

Max

.405

.301

.122

LL1

LL2

LS1

LS2

LW1

LW2

1N7058CCU3

1N7058CCU3C

7.39

2.74

7.65

3.12

3.39

0.51

5.84

3.18

U3 Only

U3C Only

.1195 .1335 3.035

.010

.220

.115

.020

.230

.125

0.25

5.59

2.92

.150 BSC

.075 BSC

3.81 BSC

1.91 BSC

.281

.291

.100

7.14

7.39

2.54

.090

.030

2.29

0.76

1N7038U3

2,3

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Dimensions are in accordance with ASME Y14.5M.

4. Suffix “U3C” indicates a ceramic lid on package.

* FIGURE 1. Dimensions and configuration, 1N7038U3, 1N7058CCU3, and 1N7058CCU3C.

MIL-PRF-19500/731A

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. While every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this

specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-19500

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-750 Test Methods for Semiconductor Devices.

Semiconductor Devices, General Specification for.

(Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or

https://assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,

Philadelphia, PA 19111-5094.)

* 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the

text of this document and the references cited herein, the text of this document takes precedence. Nothing in this

document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500.

3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in

MIL-PRF-19500, and on figure 1 herein.

3.4.1 Polarity. Polarity and terminal configuration shall be in accordance with figure 1 herein.

3.4.2 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750 and herein.

Where a choice of finish is desired, it shall be specified in the acquisition document (see 6.2).

3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I herein.

3.6 Electrical test requirements. The electrical test requirements shall be as specified in tables I and II herein.

3.7 Marking. Marking shall be in accordance with MIL-PRF-19500 and herein.

3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

MIL-PRF-19500/731A

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4 and tables I and II herein).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified

herein.

4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In

case qualification was awarded to a prior revision of the specification sheet that did not request the performance of

table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on

the first inspection lot of this revision to maintain qualification.

* 4.3 Screening (JANS, JANTXV, and JANTX levels). Screening shall be in accordance with table E-IV of

MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen

(see table E-IV of

MIL-PRF-19500)

Measurement

JANS level

JANTX and JANTXV levels

Method 4066 of MIL-STD-750, condition A,

one pulse, I = 0, V

= 0, see 1.3

one pulse, I = 0, V

= 0, see 1.3

(1)(2) 3b

RWM

herein, column 4.

(2) 3c

9, 10

Thermal impedance (see 4.3.2)

Avalanche energy test (see 4.3.3)

Not applicable

Thermal impedance (see 4.3.2)

Avalanche energy test (see 4.3.3)

Not applicable

and I

See 4.3.1

Subgroup 2 and 3, of table I herein, V

See 4.3.1

Subgroup 2, of table I herein excluding

thermal impedance; V and I

;

and I , excluding thermal impedance;

∆V = ±50 mV (pk);

∆ I

= ±100 percent from the initial value

∆ I

= ±100 percent from the initial value

or ±100uA, whichever is greater.

(1) Surge shall precede thermal impedance.

(2) Thermal impedance and surge shall be performed any time after screen 3a and before screen 13.

* 4.3.1 Power burn-in conditions. Burn-in conditions are as follows: Method 1038 of MIL-STD-750, test

condition A. V = 120 V dc; T = +125°C.

4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method

3101 or 4081 of MIL-STD-750 using the guidelines in that method for determining I , I , t , t . Measurement

M H H MD

delay time (t

) = 70 µs max. See table III, subgroup 4 herein.

* 4.3.3 Avalanche energy test. The avalanche energy test is to be performed in accordance with method 4064 of

MIL-STD-750 using the circuit as shown on figure 6 or equivalent. The Schottky rectifier under test must be capable

of absorbing the reverse energy, as follows: I

= 170 mA, V = 150 V minimum, L = 150 mH.

RSM

MIL-PRF-19500/731A

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of

MIL-PRF-19500, and table I herein. Electrical measurements (end-points) and delta requirements shall be in

accordance with the applicable steps of table II herein.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for

subgroup testing in tables E-VIa (JANS) and E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and as follows.

Electrical measurements (end-points) shall be in accordance with table I, subgroup 2, forward voltage test (V ) and

reverse leakage test (I ) herein. Delta measurements shall be in accordance with table II herein.

* 4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500.

Subgroup

Method

1037

Condition

∆T = +85°C, I = 2 A minimum for 2,000 cycles.

1038

4081

Condition A, VR = 120 V dc, T = +125°C, t = 340 hours min; heat sinking

allowed. This test shall be extended to 1000 on each JANS wafer lot.

Limit for thermal resistance for 1N7038U3 is 1.82°C/W.

Limit for thermal resistance for 1N7058CCU3 is 3.5°C/W for each diode.

Limit for thermal resistance for 1N7058CCU3C is 3.5°C/W for each diode.

* 4.4.2.2 Group B inspection, table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500.

Subgroup

Method

1037

Condition

∆T = +85°C, I = 2 A minimum for 2,000 cycles.

* 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with

table I, subgroup 2, forward voltage test (V ) and reverse leakage test (I ) herein. Delta measurements shall be

in accordance with table II herein.

Subgroup

Method

2036

Condition

Not required

1037

∆TC = +85°C, I = 2 A minimum for 6,000 cycles.

1038

Condition A, VR = 120Vdc, T = +125°C, t = 1000 hours minimum; (heat sinking

allowed), for TX, TXV only.

4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the tests and conditions

specified for subgroup testing in table E-IX of MIL-PRF-19500, and table III herein. Delta measurements shall be in

accordance with table II herein.

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.

MIL-PRF-19500/731A

* TABLE I. Group A inspection.

MIL-STD-750

Conditions

Limits

Min Max

Inspection

1/ 2/

Symbol

Unit

Method

2071

Subgroup 1

Visual and mechanical

examination

Subgroup 2

Thermal impedance

Forward voltage

3101

4011

See 4.3.2

Pulsed test (see 4.5.1)

°C/W

ΘJC

= 15A (pk)

= 7.5A (pk)

.96

1.05

V dc

1N7038U3

1N7058CCU3

1N7058CCU3C

4011

4016

Pulsed test (see 4.5.1)

Forward voltage

1N7038U3

1N7058CCU3

1N7058CCU3C

= 30 A (pk)

= 15 A (pk)

1.18

1.20

V dc

DC method

Reverse current

= 150 V

.12

.02

mA dc

1N7038U3

1N7058CCU3

1N7058CCU3C

Subgroup 3

High temperature

operation:

= +125 °C

Forward voltage

1N7038U3

1N7058CCU3

1N7058CCU3C

Pulsed test (see 4.5.1)

= 15A (pk)

= 7.5A (pk)

.75

.72

V dc

Forward voltage

Pulsed test (see 4.5.1)

= 30 A (pk)

= 15 A (pk)

.92

.85

V dc

1N7038U3

1N7058CCU3

1N7058CCU3C

4016

Reverse current

1N7038U3

DC method;

= 150 V

6.0

mA dc

7.0

mA dc

1N7058CCU3

1N7058CCU3C

See footnotes at end of table.

MIL-PRF-19500/731A

TABLE I. Group A inspection – Continued.

MIL-STD-750

Conditions

Limits

Min Max

Inspection 1/ 2/

Symbol

Unit

Method

Subgroup 3 - continued

Low temperature

operation:

= -55°C

1N7038U3

1N7058CCU3

1N7058CCU3C

= 15A (pk)

= 7.5A (pk)

1.07

1.06

V dc

Forward voltage

1N7038U3

1N7058CCU3

4011 Pulsed test (see 4.5.1)

= 30 A (pk)

= 15 A (pk)

1.26

1.23

V dc

1N7058CCU3C

Subgroup 4

Junction capacitance

4001

= 5 V dc, f = 1 MHz,

= 50 mV (p-p)

SIG

1N7038U3

1N7058CCU3

1N7058CCU3C

340

130

Subgroup 5

Not applicable

Subgroup 6

Surge

4066 See 1.3, column 4 herein, ten surges each

diode. 60 seconds between surges,

(see 4.5.1).

Electrical measurements

Subgroup 7

See table I, subgroup 2 herein.

Dielectric withstanding

voltage 3/

1016

= 500 V dc; all leads shorted;

DWV

µA

measure from leads to case.

Scope display evaluation 4023 Stable only.

Electrical measurements

See table I, subgroup 2 herein.

1/ For sampling plan, see MIL-PRF-19500.

2/ Electrical characteristics apply to all package styles and polarities.

3/ Not required for 1N7058CCU3C.

MIL-PRF-19500/731A

* TABLE II. Groups B, C, and E delta requirements. 1/ 2/ 3/ 4/ 5/ 6/

MIL-STD-750

Conditions

Limits

Min Max

Step

Inspection

Symbol

Unit

Method

4011

Forward voltage

1N7038U3

∆V

±50 mV dc from initial

reading.

= 15 A (pk)

pulsed (see 4.5.1)

I = 7.5 A (pk)

pulsed (see 4.5.1)

V = 150V

1N7058CCU3

1N7058CCU3C

Reverse current

4016

3101

∆I

±100 pecent from initial

reading or ±100uA

whichever is greater.

Thermal impedance

See 4.3.2

ΘJX

1/ Each individual diode.

2/ The electrical measurements for table E-VIa (JANS) of MIL-PRF-19500 are as follows:

a. Subgroup 4, see table II herein, steps 1, 2, and 3.

b. Subgroup 5, see table II herein, steps 1 and 2.

3/ The electrical measurements for table E-VIb (JANTX and JANTXV) of MIL-PRF-19500 are as follows:

a. Subgroup 2, see table II herein, steps 1, 2, and 3.

b. Subgroup 3, see table II herein, steps 1, 2, and 3.

c. Subgroup 6, see table II herein, steps 1 and 2.

4/ The electrical measurements for table E-VII of MIL-PRF-19500 are as follows:

a. Subgroups 2 and 3, see table II herein, steps 1, 2, and 3 for all levels.

b. Subgroup 6, see table II herein, steps 1, 2, and 3 for all levels.

5/ Devices which exceed the table I limits for this test shall not be accepted.

6/ The electrical measurements for table E-IX of MIL-PRF-19500 are as follows:

a. Subgroup 1, see table III herein, steps 1, 2, and 3.

b. Subgroup 2, see table III herein, steps 1 and 2.

MIL-PRF-19500/731A

* TABLE III. Group E inspection (all quality levels) – for qualification and requalification only.

MIL-STD-750

Inspection

Qualification

n = 12, c = 0

Method

Conditions

Subgroup 1

Temperature cycling

(air to air)

1051

1071

Test condition G, 500 cycles, -55°C to +150°C.

Hermetic seal

Electrical

See table I, subgroup 2 and table II herein.

measurements

Subgroup 2

Life test

n = 12, c = 0

1048

t = 1,000 hours, T = +125°C, V = 80 percent rated voltage

(see 1.3, column 2 herein).

Electrical

See table I subgroup 2 and table II herein.

measurements

Subgroup 4

Thermal impedance

curves

3101

1020

See MIL-PRF-19500.

Subgroup 6

ESD

n = 3

Subgroup 10 1/

Surge

n = 5, c = 0

1N7038U3

4066

Condition A, T = +25°C, I

= 140 A, 100 surges of 8.3 ms

FSM

superimposed on I . V = 0; I = 0 A pk half sine wave,

continuous.

1N7058CCU3

1N7058CCU3C

Condition A, T = +25°C, I

= 130 A, 100 surges of 8.3 ms

FSM

superimposed on I . V = 0; I = 0 A pk half sine wave,

continuous.

Electrical

measurements

See table I subgroup 2 (V and I only).

1/ Each individual diode.

MIL-PRF-19500/731A

TEMPERATURE-CURRENT DERATING CURVE

Temperature-Current Derating Curve

1N7038U3

100

125

150

175

Switch Mode Operation 80.00% D/C

Tc (ºC) (Case)

T (°C) (CASE)

SWITCH MODE OPERATION 80% D/C

^Thermal=^Re1^s.ⁱ8^sta°ⁿC^c/^eW^{Junction to Case = 1.8ºC/W}

ΘJC

NOTES:

1. All devices are capable of operating at ≤ T specified on this curve. Any parallel line to this curve will intersect

the appropriate current for the desired maximum T allowed.

2. Derate design curve constrained by the maximum junction temperature (T ≤ 150°C) and current rating

specified. (See 1.3 herein.)

3. Derate design curve chosen at T ≤ 125°C, where the maximum temperature of electrical test is performed.

4. Derate design curves chosen at T ≤, 125°C, and 110°C to show current rating where most users want to limit

T in their application.

FIGURE 2. Temperature-current derating curve (entire package) 1N7038U3.

MIL-PRF-19500/731A

TEMPERATURE-CURRENT DERATING CURVE

Temperature-Current Derating Curve

1N7058CCU₁3_Na₇₀n₅d_8C1_CN_U7₃058CCU3C

100

125

150

175

Switch Mode Operation 80.00% D/C

Tc (ºC) (Case)

T (°C) (CASE)

SWITCH MODE OPERATION 80% D/C

ΘJC

^Thermal=^Re1^s.ⁱ7^sta°ⁿC^c/^eW^{Junction to Case = 1.7ºC/W}

NOTES:

1. All devices are capable of operating at ≤ T specified on this curve. Any parallel line to this curve will intersect

the appropriate current for the desired maximum T allowed.

2. Derate design curve constrained by the maximum junction temperature (T ≤ 150°C) and current rating

specified. (See 1.3 herein.)

3. Derate design curve chosen at T ≤ 125°C, where the maximum temperature of electrical test is performed.

4. Derate design curves chosen at T ≤ 125°C, and 110°C to show current rating where most users want to limit

T in their application.

* FIGURE 3. Temperature-current derating curve (for each leg) for 1N7058CCU3. and1N7058CCU3C.

MIL-PRF-19500/731A

10.00

1.00

0.10

Notes:

1. Duty factor D = t 1/t2

2. Peak T = Pdm x Z

+ T

ΘJC

D=0.5

D=0.4

D=0.3

D=0.2

D=0.1

Single Pulse

(Thermal Resistance)

0.00001

0.0001

0.001

0.01

0.1

t1, RECTANGULAR PULSE DURATION (Sec)

FIGURE 4. Thermal impedance 1N7038U3.

MIL-PRF-19500/731A

10.00

1.00

0.10

Notes:

1. Duty factor D = t 1/t2

2. Peak T = Pdm x Z

+ T

ΘJC

D=0.5

D=0.4

D=0.3

D=0.2

D=0.1

Single Pulse

(Thermal Resistance)

0.00001

0.0001

0.001

0.01

0.1

t1, RECTANGULAR PULSE DURATION (Sec)

* FIGURE 5. Thermal impedance (for each leg), 1N7058CCU3 and 1N7058CCU3C.

MIL-PRF-19500/731A

Input pulse R = 50 ohms

= 10 Volts, R = 0.1 ohms

= 50 ohms

L = 150mH

Duty cycle ≤ 1 percent, T = IRF350/2N6768 or equivalent

Procedure:

1. With S open, adjust pulse width to test current of 1 amp across R .

2. Close S, verify test current with current sense.

3. Read peak output voltage (see 4.3.3).

FIGURE 6. Avalanche energy test circuit.

MIL-PRF-19500/731A

5. PACKAGING

5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or

order (see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these

personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging

requirements are maintained by the Inventory Control Point's packaging activities within the Military Service or

Defense Agency, or within the Military Service’s system commands. Packaging data retrieval is available from the

managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by

contacting the responsible packaging activity.

6. NOTES

(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.

The notes specified in MIL-PRF-19500 are applicable to this specification.)

6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design

applications and logistic support of existing equipment.

6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.

6.2 Acquisition requirements. Acquisition documents should specify the following:

a. Title, number, and date of this specification.

b. Packaging requirements (see 5.1).

c. Lead formation and finish (see 3.4.2).

d. Product assurance level and type designator.

* 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which

are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or

not such products have actually been so listed by that date. The attention of the contractors is called to these

requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal

Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the

products covered by this specification. Information pertaining to qualification of products may be obtained from

Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail

vqe.chief@dla.mil . An online listing of products qualified to this specification may be found in the Qualified Products

Database (QPD) at https://assist.daps.dla.mil .

* 6.4 Cross reference substitution list. A PIN for PIN replacement table follows, and these devices are directly

interchangeable.

Non-preferred PIN

Preferred PIN

30LJQ150

30CLJQ150

30CLJCQ150

JANS, JANTXV, JANTX, JAN1N7038U3

JANS, JANTXV, JANTX, JAN1N7058CCU3

JANS, JANTXV, JANTX, JAN1N7058CCU3C

* 6.5 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where

changes from the previous issue were made. This was done as a convenience only and the Government assumes

no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the

requirements of this document based on the entire content irrespective of the marginal notations and relationship to

the last previous issue.

MIL-PRF-19500/731A

Custodians:

Army - CR

Navy - EC

Air Force - 85

NASA - NA

DLA - CC

Preparing activity:

DLA - CC

(Project 5961-2008-115)

NOTE: The activities listed above were interested in this document as of the date of this document. Since

organizations and responsibilities can change, you should verify the currency of the information above using the

ASSIST Online database at https://assist.daps.dla.mil .

30CLJQ150SCSA [INFINEON]

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