40EPS [INFINEON]

INPUT RECTIFIER DIODE; 输入整流二极管


型号：	40EPS
厂家：	Infineon
描述：	INPUT RECTIFIER DIODE 输入整流二极管整流二极管输入元件
文件：	总6页 (文件大小：164K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Bulletin I2104 rev. B 10/01

SAFEIR Series

40EPS12

INPUT RECTIFIER DIODE

V_F< 1V @ 20A

I_FSM= 475A

V_RRM800 - 1200V

Description/Features

The 40EPS.. rectifier SAFEIR series has been optimized

for very low forward voltage drop, with moderate leakage.

The glass passivation technology used has reliable opera-

tion up to 150° C junction temperature.

Typical applications are in input rectification and these

products are designed to be used with International

RectifierSwitchesandOutputRectifierswhichareavailable

in identical package outlines.

Package Outline

Major Ratings and Characteristics

Characteristics

40EPS.. Units

Sinusoidal

waveform

F(AV)

800 -1200

475

Range(*)

RRM

FSM

@20A,T =25°C

1.0

TO-247AC (Modified)

-40to150

°C

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40EPS.. SAFEIR Series

Bulletin I2104 rev. B 10/01

Voltage Ratings

V_RRM, maximum

peak reverse voltage

V_RSM, maximum non repetitive

I_RRM

150°C

peak reverse voltage

Part Number

40EPS08

40EPS12

800

900

1200

1300

Absolute Maximum Ratings

Parameters

I_F(AV)Max.AverageForwardCurrent

40EPS.. Units

Conditions

@T_C=105°C,180°conductionhalfsinewave

I_FSMMax.PeakOneCycleNon-Repetitive

SurgeCurrent

400

475

10msSinepulse,ratedV_RRMapplied

10msSine pulse,novoltagereapplied

I²t

Max.I²tforfusing

800

1131

11310

10msSinepulse,ratedV_RRMapplied

10msSinepulse,novoltagereapplied

t=0.1to10ms,novoltagereapplied

A²s

I²√t Max.I²√tforfusing

A²√s

Electrical Specifications

Parameters

40EPS.. Units

Conditions

V_FMMax. Forward Voltage Drop

1.1

7.16

0.74

0.1

mΩ

@ 40A, T_J= 25°C

r_t

Forward slope resistance

T_J= 150°C

V_F(TO)Threshold voltage

I_RMMax. Reverse Leakage Current

T_J= 25 °C

V_R= rated V_RRM

1.0

T_J= 150 °C

Thermal-Mechanical Specifications

Parameters

40EPS.. Units

Conditions

T_J

Max.JunctionTemperatureRange

-40to150

0.6

°C

T_stgMax.StorageTemperatureRange

R_thJCMax.ThermalResistanceJunction

toCase

R_thJAMax.ThermalResistanceJunction

toAmbient

R_thCSTypicalThermalResistance,Caseto

Heatsink

°C/W

DCoperation

°C/W

g(oz.)

0.2

Mountingsurface,smoothandgreased

ApproximateWeight

MountingTorque

6(0.21)

6(5)

12(10)

Min.

Kg-cm

(Ibf-in)

Max.

CaseStyle

TO-247AC

JEDEC(Modified)

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40EPS.. SAFEIR Series

Bulletin I2104 rev. B 10/01

150

145

140

135

130

125

120

115

110

105

100

150

140

130

120

110

100

40EPS.. Series

(DC) = 0.6 K/W

(D C) = 0.6 K/W

thJC

Conduction Period

Conduction Angle

120

180

120

180

10 15 20 25 30 35 40 45

Average Forward Current (A)

Fig.1-CurrentRatingCharacteristics

Fig.2-CurrentRatingCharacteristics

180

120

180

120

RMS Lim it

Conduction Period

Conduction Angle

40EPS.. Series

= 150 C

1 5

Average Forw ard Current (A)

Average Forward Current (A)

Fig.3-ForwardPowerLossCharacteristics

Fig.4-ForwardPowerLossCharacteristics

500

450

400

350

300

250

200

150

100

10 00

100

Maxim um Non Repetitive Surge Current

Versus Pulse Train Duration.

Initial T = 150

No Voltage Reapplied

Rated V Reapplied

RRM

= 25 C

= 150

40EPS.. Series

0.5

1.5

2.5

0.01

0.1

Pulse Train Duration (s)

Instan taneous Forw ard Voltage (V)

Fig.5-ForwardVoltageDropCharacteristics

Fig.6-MaximumNon-RepetitiveSurgeCurrent

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40EPS.. SAFEIR Series

Bulletin I2104 rev. B 10/01

D = 0.50

D = 0.33

D = 0.25

D = 0.17

Steady State Value:

(DC Operation)

D = 0.08

0.1

Single Pulse

40EPS.. Series

0.01

0.001

0.01

0.1

Square W ave Pulse Duration (s)

Fig.7-ThermalImpedanceZ_thJCCharacteristics

Outline Table

3. 65 (0.144)

5. 30 (0.209)

4.70 ( 0.185)

DIA.

15.90 (0.626)

15.30 (0.602)

3. 55 (0.139)

2.5 ( 0.098)

1.5 ( 0.059)

5. 70 (0.225)

5.30 ( 0.208)

20.30 (0.800)

19.70 (0.775)

5.50 ( 0.217)

4. 50 (0.177)

(2 PLCS.)

14. 80 ( 0.583)

14.20 (0.559)

4. 30 (0.170)

3. 70 (0.145)

2. 20 (0.087)

MAX.

2. 40 (0.095)

MAX.

1. 40 (0.056)

1. 00 (0.039)

0.80 ( 0.032)

0. 40 (0.213)

10. 94 ( 0.430)

10.86 (0.427)

Dimensionsinmillimetersandinches

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40EPS.. SAFEIR Series

Bulletin I2104 rev. B 10/01

Marking Information

EXAMPLE: THIS IS A 40EPS12

PART NUMBER

WITH ASSEMBLY

LOT CODE 5657

INTERNATIONAL

RECTIFIER

LOGO

40EPS12

035H

ASSEMBLED ON WW 35, 2000

IN THE ASSEMBLY LINE "H"

DATE CODE

YEAR 0 = 2000

WEEK 35

ASSEMBLY

LOT CODE

LINE H

Ordering Information Table

Device Code

BASE

CATHODE

Current Rating

ANODE

CATHODE

Circuit Configuration

E = Single Diode

Package

P = TO-247AC (Modified)

Type of Silicon

S = Standard Recovery Rectifier

Voltage code: Code x 100 = V

08 = 800V

12 = 1200V

RRM

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial Level.

Qualification Standards can be found on IR's Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7309

Visit us at www.irf.com for sales contact information. 10/01

www.irf.com

40EPS.. SAFEIR Series

Bulletin I2104 rev. B 10/01

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408.

IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801.

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933.

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220.

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086.

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630.

IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936.

http://www.irf.com

Fax-On-Demand: +44 1883 733420

Data and specifications subject to change without notice.

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