40MT120UH [INFINEON]
HALF-BRIDGE IGBT MTP UltraFast NPT IGBT; 半桥IGBT MTP超快NPT IGBT
| 型号： | 40MT120UH |
| 厂家： | 
Infineon |
| 描述： | HALF-BRIDGE IGBT MTP UltraFast NPT IGBT |
| 文件： | 总13页 (文件大小：676K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
I27126 rev. C 02/03
40MT120UH
UltraFast NPT IGBT
"HALF-BRIDGE" IGBT MTP
Features
• UltraFast Non Punch Through (NPT)
Technology
• Positive VCE(ON)Temperature Coefficient
• 10µs Short Circuit Capability
• HEXFRED TM Antiparallel Diodes with
UltraSoft Reverse Recovery
• Low Diode VF
VCES = 1200V
IC = 80A
• Square RBSOA
TC = 25°C
• Aluminum Nitride DBC
• Optional SMT Thermistor (NTC)
• Very Low Stray Inductance Design for
High Speed Operation
• UL approved (file E78996)
Benefits
• Optimized for Welding, UPS and SMPS
Applications
• Rugged with UltraFast Performance
• Benchmark Efficiency above 20KHz
• Outstanding ZVS and Hard Switching
Operation
• Low EMI, requires Less Snubbing
• Excellent Current Sharing in Parallel
Operation
• Direct Mounting to Heatsink
• PCB Solderable Terminals
MMTP
Absolute Maximum Ratings
Parameters
Max
Units
VCES
Collector-to-Emitter Breakdown Voltage
1200
V
I C
Continuos Collector Current
@ TC = 25°C
@ TC = 105°C
80
40
A
I CM
I LM
I F
Pulsed Collector Current
160
160
21
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 105°C
I FM
160
VGE
VISOL
PD
Gate-to-Emitter Voltage
± 20
2500
463
V
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation (only IGBT) @ TC = 25°C
@ TC = 100°C
W
185
www.irf.com
1
40MT120UH
I27126 rev. C 02/03
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameters
Min Typ Max Units Test Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200
V
VGE = 0V, IC = 250µA
∆V(BR)CES/ Temperature Coeff. of
+1.1
V/°C VGE = 0V, IC = 3mA (25-125°C)
∆TJ
Breakdown Voltage
VCE(ON) Collector-to-Emitter Saturation Voltage
3.36 3.59
4.53 4.91
3.88 4.10
5.35 5.68
V
V
VGE = 15V, IC = 40A
VGE = 15V, IC = 80A
VGE = 15V, IC = 40A TJ = 150°C
VGE = 15V, IC = 80A T = 150°C
VCE = VGE, IC = 500µA J
VGE(th)
Gate Threshold Voltage
4
6
∆VGE(th)/ Temperature Coeff. of
-12
mV/°C VCE = VGE, IC = 1mA (25-125°C)
∆TJ
gfe
Threshold Voltage
Transconductance
35
S
VCE = 50V, IC = 40A, PW = 80µs
ICES
Zero Gate Voltage Collector Current
250
1.0
10
µA VGE = 0V, VCE = 1200V, TJ = 25°C
mA VGE = 0V, VCE = 1200V, TJ = 125°C
VGE = 0V, VCE = 1200V, TJ = 150°C
0.4
0.2
IGES
Gate-to-Emitter Leakage Current
±250 nA VGE = ± 20V
Switching Characteristics @ T = 25°C (unless otherwise specified)
J
Parameters
Min Typ Max Units Test Conditions
Q
Q
Q
Total Gate Charge (turn-on)
Gate-Emitter Charge (turn-on)
Gate-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
399
43
599
65
nC IC = 40A
g
ge
gc
VCC = 600V
187
281
VGE = 15V
µJ VCC = 600V, IC = 40A
E
on
E
off
E
tot
1142 1713
1345 2018
2487 3731
VGE = 15V, Rg = 5Ω, L = 200µH
TJ = 25°C, Energy losses include tail
and diode reverse recovery
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
1598 2397
1618 2427
3216 4824
µJ VCC = 600V, IC = 40A
on
off
tot
VGE = 15V, Rg = 5Ω, L = 200µH
TJ = 125°C, Energy losses include tail
and diode reverse recovery
pF VGE = 0V
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
5521 8282
ies
oes
res
380
171
570
257
VCC = 30V
f = 1.0 MHz
RBSOA Reverse Bias Safe Operating Area
full square
TJ = 150°C, IC = 160A
VCC = 1000V, Vp = 1200V
Rg = 5Ω, VGE = +15V to 0V
µs TJ = 150°C
SCSOA Short Circuit Safe Operating Area
10
VCC = 900V, Vp = 1200V
Rg = 5Ω, VGE = +15V to 0V
www.irf.com
2
40MT120UH
Bulletin I27126 rev. B 10/02
Diode Characteristics @ T = 25°C (unless otherwise specified)
J
Parameters
Min Typ Max Units Test Conditions
VFM
Diode Forward Voltage Drop
2.98 3.38
3.90 4.41
3.08 3.39
4.29 4.72
3.12 3.42
V
IC = 40A
IC = 80A
IC = 40A, TJ = 125°C
IC = 80A, TJ = 125°C
IC = 40A, TJ = 150°C
VGE = 15V, Rg = 5Ω, L = 200µH
VCC = 600V, IC = 40A
TJ = 125°C
Erec
trr
Irr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
574
120
43
861
180
65
µJ
ns
A
Thermistor Specifications (40MT120UHT only)
Parameters
Resistance
Sensitivity index of the thermistor
material
Min Typ Max Units Test Conditions
(1)
R
0
30
kΩ T0 = 25°C
(1) (2)
β
4000
K
T0 = 25°C
T1 = 85°C
R0
R1
(1) T0,T1 are thermistor's temperatures
β ( 1T 1T)]
, Temperatures in Kelvin
(2)
= exp
[
0
1
Thermal- Mechanical Specifications
Parameters
Operating Junction Temperature Range
Storage Temperature Range
Min
- 40
- 40
Typ
Max
Units
TJ
TSTG
150
125
0.27
°C
RthJC
Junction-to-Case
IGBT
0.20
°C/ W
Diode
Module
0.39
0.06
0.59
RthCS
Case-to-Sink
(Heatsink Compound Thermal Conductivity = 1 W/mK)
Clearance (external shortest distance in air
between two terminals)
Creepage (shortest distance along external
5.5
8
mm
surface of the insulating material between 2 terminals)
T
Wt
Mounting torque to heatsink
Weight
(3)
3 ± 10%
66
Nm
g (oz)
(3) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the
compound. Lubricated threads
www.irf.com
3
40MT120UH
I27126 rev. C 02/03
100
80
60
40
20
0
600
500
400
300
200
100
0
0
20 40 60 80 100 120 140 160
(°C)
0
20 40 60 80 100 120 140 160
(°C)
T
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
1000
100
10
1000
100
10
10 µs
100 µs
1
10ms
DC
0.1
0.01
1
1
10
100
(V)
1000
10000
10
100
1000
10000
V
V
(V)
CE
CE
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 150°C
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
www.irf.com
4
40MT120UH
Bulletin I27126 rev. B 10/02
160
140
120
100
80
160
140
120
100
80
V
= 18V
V
= 18V
GE
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
60
60
40
40
20
20
0
0
0
2
4
6
8
10
0
2
4
6
(V)
8
10
V
(V)
V
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
TJ = -40°C; tp = 80µs
160
140
120
100
80
120
100
V
= 18V
GE
-40°C
25°C
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
125°C
80
60
40
20
0
60
40
20
0
0.0
1.0
2.0
3.0
(V)
4.0
5.0
0
2
4
6
8
10
V
V
(V)
F
CE
Fig. 8 - Typ. Diode Forward Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
tp = 80µs
TJ = 125°C; tp = 80µs
www.irf.com
5
40MT120UH
I27126 rev. C 02/03
20
18
16
14
12
10
8
20
18
16
14
12
10
8
I
I
I
= 80A
= 40A
= 20A
I
I
I
= 80A
= 40A
= 20A
CE
CE
CE
CE
CE
CE
6
6
4
4
2
2
0
5
0
10
15
20
5
10
15
20
V
(V)
GE
V
(V)
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
350
300
250
200
150
100
50
20
18
16
14
12
10
8
I
I
I
= 80A
= 40A
= 20A
T
T
= 25°C
= 125°C
CE
CE
CE
J
J
6
4
2
0
0
5
10
15
20
0
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 12 - Typ. Transfer Characteristics
Fig. 11 - Typical VCE vs. VGE
VCE = 50V; tp = 10µs
TJ = 125°C
www.irf.com
6
40MT120UH
Bulletin I27126 rev. B 10/02
4800
4200
3600
3000
2400
1800
1200
600
1000
100
10
td
OFF
t
R
E
ON
td
ON
E
t
OFF
F
0
0
20
40
60
80
100
0
20
40
60
80
100
I
(A)
I
(A)
C
C
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 125°C; L=250µH; VCE= 400V
RG= 5Ω; VGE= 15V
Fig. 14 - Typ. Switching Time vs. IC
TJ = 125°C; L=250µH; VCE= 400V
RG= 5Ω; VGE= 15V
6000
5000
4000
3000
2000
1000
10000
1000
100
E
ON
td
OFF
E
OFF
td
ON
R
t
t
F
10
0
10
20
30
(
40
50
60
0
10
20
30
(
40
50
60
R
)
Ω
R
)
Ω
G
G
Fig. 15 - Typ. Energy Loss vs. RG
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L=250µH; VCE= 600V
ICE= 40A; VGE= 15V
TJ = 150°C; L=250µH; VCE= 600V
ICE= 40A; VGE= 15V
www.irf.com
7
40MT120UH
I27126 rev. C 02/03
50
40
30
20
10
0
50
40
30
20
10
R
5.0
Ω
G =
R
10
Ω
G =
R
30
Ω
G =
R
50
Ω
G =
0
10
20
30
(
40
50
60
10
20
30
40
(A)
50
60
70
R
Ω)
I
G
F
Fig. 18 - Typical Diode IRR vs. RG
Fig. 17 - Typical Diode IRR vs. IF
TJ = 125°C; IF = 40A
TJ = 125°C
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
50
45
40
35
30
25
20
15
10
60A
40A
50
Ω
20A
30
Ω
10
Ω
5.0
Ω
0
200
400
600
800
1000
0
200
400
600
800 1000 1200
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig. 20 - Typical Diode QRR
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 600V; VGE= 15V;
VCC= 600V; VGE= 15V;TJ = 125°C
ICE= 40A; TJ = 125°C
www.irf.com
8
40MT120UH
Bulletin I27126 rev. B 10/02
10000
1000
100
Cies
Coes
Cres
10
0
20
40
60
(V)
80
100
V
CE
Fig. 21- Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
16
14
12
10
8
600V
6
4
2
0
0
100
Q
200
300
400
500
, Total Gate Charge (nC)
G
Fig. 22 - Typical Gate Charge vs. VGE
ICE = 5.0A; L = 600µH
www.irf.com
9
40MT120UH
I27126 rev. C 02/03
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
0.01
τJ
τC
0.043
0.105
0.123
0.001214
0.044929
1.1977
τJ
τ1
τ
τ2
τ3
τ1
0.001
τ2
τ3
Ci= τi/Ri
Ci= Ri
Notes:
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t
, Rectangular Pulse Duration (sec)
1
Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1
0.1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
Ri (°C/W) τi (sec)
τJ
τC
0.024
0.549
0.00008
0.000098
τJ
τ1
τ
0.02
τ2
τ1
τ2
0.01
Ci= τi/Ri
0.01
0.001
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
( THERMAL RESPONSE )
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
, Rectangular Pulse Duration (sec)
0.001
0.01
t
1
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
www.irf.com
10
40MT120UH
Bulletin I27126 rev. B 10/02
L
L
80 V
VCC
DUT
DUT
1000V
0
Rg
1K
Fig. CT.1 - Gate Charge Circuit (turn-off)
Fig. CT.2 - RBSOA Circuit
diode clamp /
DUT
L
Driver
D
C
- 5V
900V
DUT /
DUT
VCC
DRIVER
Rg
Fig. CT.4 - Switching Loss Circuit
Fig. CT.3 - S.C. SOA Circuit
www.irf.com
11
40MT120UH
I27126 rev. C 02/03
Outline Table
Electrical Circuit
Resistance in ohms
Dimensions in millimetres
Note: unused terminals are not assembled in the package
www.irf.com
12
40MT120UH
Bulletin I27126 rev. B 10/02
Ordering Information Table
Device Code
40 MT 120
U
H
-
1
4
5
6
2
3
1
2
3
4
5
6
-
-
-
-
-
-
Current rating
Essential Part Number
Voltage code
Speed/ Type
Circuit Configuration (H = Half Bridge)
Special Option
(40 = 40A)
(120 = 1200V)
(U = Ultra Fast IGBT)
Empty = no special option
= Thermistor
T
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 10/02
www.irf.com
13
相关型号：
40MT120UHT
Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, MTP, 13 PIN
INFINEON
40MT120UHTA
Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, MTP, 13 PIN
VISHAY
©2020 ICPDF网 联系我们和版权申明