4GBL08 [INFINEON]

4.0 Amps Single Phase Full Wave Bridge Rectifier; 4.0安培单相全波桥式整流器


型号：	4GBL08
厂家：	Infineon
描述：	4.0 Amps Single Phase Full Wave Bridge Rectifier 4.0安培单相全波桥式整流器二极管
文件：	总5页 (文件大小：101K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PART OBSOLETE - EOL18

Bulletin I2716 rev. F 06/03

4GBL Series

4.0 Amps Single Phase Full Wave

Bridge Rectifier

Features

Diode chips are glass passivated

Easy to assemble & install on P.C.B.

High Surge Current Capability

High Isolation between terminals and molded case (1500 V_RMS

Lead free terminals solderable as per MIL-STD-750 Method 2026

Terminals suitable for high temperature soldering at 260°C for 8-10 secs

UL E160375 approved

I_O(AV)= 4A

V_RRM= 50/ 800V

)

Description

These GBL Series of Single Phase Bridges consist

of four glass passivated silicon junction connected

as a Full Wave Bridge. These four junctions are

encapsulated by plastic molding technique. These

Bridges are mainly used in Switch Mode power

supply and in industrial and consumer equipment.

Major Ratings and Characteristics

Parameters

4GBL

Units

I_O

@T_C

°C

I_FSM

@50Hz

@60Hz

@50Hz

@60Hz

150

158

113

A²s

I²t

104

4GBL

V_RRMrange

T_J

50 to 800

- 55 to150

^oC

www.irf.com

4GBL Series

Bulletin I2716 rev. F 06/03

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage V_RRM, max repetitive V_RMS, maximum V_RSM, max non-repetitive I_RRMmax.

I_RRMmax.

Type number Code

peak rev. voltage

T_J= T_Jmax.

RMS voltage

T_J= T_Jmax.

reverse voltage

T_J= T_Jmax.

@ rated V_RRM@ rated V_RRM

T_J= 25°C

µA

T_J= 150°C

µA

4GBL

005

140

280

420

560

400

100

200

400

600

800

150

275

500

725

900

Forward Conduction

Parameters

4GBL

Unit

Conditions

I_O

Maximum DC output current

3.2

150

T_C=50°C, Resistive& inductiveload

T_C=50°C, Capacitiveload

t =10ms,20ms

I_FSM

Maximum peak, one-cycle

non-repetitive surge current,

following any rated load condition

and with rated V_RRMreapplied

Maximum I²t for fusing,

initial T_J=T_Jmax

Maximum peak forward voltage

per diode

158

t =8.3ms,16.7ms

T_J=150°C

I²t

113

104

0.975

A²s

t =10ms

t =8.3ms

T_J=25^oC,I_FM=4A

V_FM

I_RM

Typical peak reverse leakage

µA

T_J=25^oC, 100%V_RRM

current per diode

V_RRMMaximum repetitive peak

reverse voltage range

50 to800

Thermal and Mechanical Specifications

Parameters

4GBL

Unit

Conditions

T_J

T_stg

R_thJC

Operatingandstorage

temperaturerange

Max. thermal resistance

junction tocase

Thermal resistance,

junction toambient

Approximate weight

-55 to150

^oC

6.5

°C/ W

g(oz)

DC rated current through bridge (1)

R_thJA

2(0.07)

Note (1): Devices mounted on 75 x 75 x 3 mm aluminum plate

www.irf.com

4GBL Series

Bulletin I2716 rev. F 06/03

Ordering Information Table

Device Code

GBL

Bridge current

Basic Part Number

Voltage Code: code x 100 = V_RRM

Outline Table

All dimensions are in millimetres

www.irf.com

4GBL Series

Bulletin I2716 rev. F 06/03

1000

100

160

140

120

100

4GBL Series

180˚

(Rect)

T = 25˚C

T = 150˚C

180˚

(Sine)

4GBL Series

0.1

0.5

Instantaneous Forward Voltage (V)

Fig. 2 - Forward Voltage Drop Characteristics

1.5

2.5

3.5

Average Forward Current (A)

Fig. 1 - Current Ratings Characteristics

160

At Any Rated Load Condition And With

Rated Vrrm Applied Following Surge.

Initial Tj = 150˚C

180˚

(Sine)

180˚

140

120

100

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

(Rect)

4GBL Series

= 150˚C

4GBL Series

100

Average Forward Current (A)

Fig. 3 - Total Power Loss Characteristics

Number of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 4 - Maximum Non-Repetitive Surge Current

www.irf.com

4GBL Series

Bulletin I2716 rev. F 06/03

Data and specifications subject to change without notice.

This product has been designed and qualified for Multiple Level.

Qualification Standards can be found on IR's Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7309

Visit us at www.irf.com for sales contact information. 06/03

www.irf.com

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