4GBL2 [INFINEON]

Bridge Rectifier Diode, 1 Phase, 4A, 200V V(RRM), Silicon;


型号：	4GBL2
厂家：	Infineon
描述：	Bridge Rectifier Diode, 1 Phase, 4A, 200V V(RRM), Silicon 二极管
文件：	总5页 (文件大小：117K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Preliminary Data Sheet rev. B I2716 12/00

4GBL Series

4.0 Amps Single Phase Full Wave

Bridge Rectifier

Features

I_O(AV)= 4A

V_RRM= 50/ 1200V

Diode chips are glass passivated

Easy to assemble & install on P.C.B.

High Surge Current Capability

High Isolation between terminals and molded case

Leads are suitable for high temperature

Soldering at 260°C for 8-10 seconds

UL evaluation is under process

Description

These GBL Series of Single Phase Bridges consist

of four glass passivated silicon junction connected

as a Full Wave Bridge. These four junctions are

encapsulated by plastic molding technique. These

Bridges are mainly used in Switch Mode power

supply and in industrial and consumer equipment.

Major Ratings and Characteristics

Parameters

4GBL

Units

I_O

@T_C

°C

I_FSM

@50Hz

@60Hz

@50Hz

@60Hz

150

158

113

A²s

I²t

104

4GBL

V_RRMrange

T_J

50 to 1200

- 55 to150

^oC

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4GBL Series

Preliminary Data Sheet rev. B I2716 12/00

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage

Type number Code

V_RRM, max repetitive

peak rev. voltage

T_J= T_Jmax.

V_RSM, max non-repetitive

peak rev. voltage

T_J= T_Jmax.

I_RRMmax.

@ rated V_RRM

T_J= 25°C

µA

I_RRMmax.

@ rated V_RRM

T_J= 150°C

µA

4GBL

005

100

200

400

600

800

1000

1200

150

300

500

700

900

1100

1300

400

Forward Conduction

Parameters

4GBL

Unit

Conditions

I_O

Maximum DC output current

3.2

150

T_C=50°C,Resistive& inductiveload

T_C=50°C,Capacitiveload

t =10ms,20ms

I_FSM

Maximumpeak,one-cycle

non-repetitive surge current,

following any rated load condition

and with rated V_RRMreapplied

Maximum I²t for fusing,

initial T_J=T_Jmax

Maximumpeakforwardvoltage

per diode

Typicalpeakreverseleakage

158

t =8.3ms,16.7ms

T_J=150°C

I²t

113

104

1.1

A²s

t =10ms

t =8.3ms

T_J=25^oC,I_FM=4A

V_FM

I_RM

µA

T_J=25^oC, 100%V_RRM

current per diode

V_RRMMaximumrepetitivepeak

reversevoltagerange

50 to1200

Thermal and Mechanical Specifications

Parameters

4GBL

Unit

Conditions

T_J

T_stg

R_thJC

Operatingandstorage

temperaturerange

Max.thermalresistance

junction tocase

Thermal resistance,

junction toambient

Approximateweight

-55 to150

^oC

6.5

°C/W

g(oz)

DC rated current through bridge (1)

R_thJA

2(0.07)

Note (1): Devices mounted on 75 x 75 x 3 mm aluminum plate

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4GBL Series

Preliminary Data Sheet rev. B I2716 12/00

Ordering Information Table

Device Code

GBL

Bridge current

Basic Part Number

Voltage Code: code x 100 = V_RRM

Outline Table

All dimensions are in millimeters

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4GBL Series

Preliminary Data Sheet rev. B I2716 12/00

130

1000

100

4GBL Series

125

120

115

180˚

(Rect)

T = 25˚C

110

T = 150˚C

180˚

(Sine)

105

100

4GBL Series

0.1

0.5

Instantaneous Forward Voltage (V)

Fig. 2 - Forward Voltage Drop Characteristics

1.5

2.5

3.5

Average Forward Current (A)

Fig. 1 - Current Ratings Characteristics

160

At Any Rated Load Condition And With

Rated Vrrm Applied Following Surge.

Initial Tj = 150˚C

180˚

(Sine)

180˚

140

120

100

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

(Rect)

4GBL Series

= 150˚C

4GBL Series

100

Average Forward Current (A)

Fig. 3 - Total Power Loss Characteristics

Number of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 4 - Maximum Non-Repetitive Surge Current

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4GBL Series

Preliminary Data Sheet rev. B I2716 12/00

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408.

IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801.

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933.

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220.

FAR

EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086.

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630.

IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936.

http://www.irf.com Fax-On-Demand: +44 1883 733420

Data and specifications subject to change without notice.

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