4GBU02LSF [INFINEON]
Bridge Rectifier Diode, 1 Phase, 4A, 200V V(RRM), Silicon, GBU, 4 PIN;型号: | 4GBU02LSF |
厂家: | Infineon |
描述: | Bridge Rectifier Diode, 1 Phase, 4A, 200V V(RRM), Silicon, GBU, 4 PIN 局域网 二极管 |
文件: | 总5页 (文件大小:82K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Bulletin I2789 rev. B 03/03
4GBU..LS Series
4.0 Amps Single Phase Full Wave
Bridge Rectifier
Features
Diode chips are glass passivated
Suitable for Universal hole mounting
Easy to assemble & install on P.C.B.
Surge Current Capability - 90APK
IO(AV) = 4A
High Isolation between terminals and molded case (1500VRMS
)
VRRM = 200/ 600V
Lead free terminals solderable as per MIL-STD-750, Method 2026
Terminals suitable for High Temperature soldering guaranteed at
260°C/ 8-10secs
UL E160375 approved
Description
These 4GBU.. Series of Single Phase Bridges
consist of four glass passivated silicon junction
connected as a Full Wave Bridge. These four
junctions are encapsulated by plastic molding
technique. These Bridges are mainly used in
Switch Mode power supply and in industrial and
consumer equipment.
Major Ratings and Characteristics
Parameters
4GBU..LS
Units
IO
4
A
@ TC
100
90
°C
A
IFSM
@50Hz
@60Hz
@50Hz
@60Hz
94
40
A
A2s
A2s
V
I2t
36
GBU
VRRM range
TJ
200 to 600
- 55 to150
oC
www.irf.com
1
4GBU..LS Series
Bulletin I2789 rev. B 03/03
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage VRRM , max repetitive
VRMS , max
RMS voltage
TJ = TJ max.
V
VRSM , max non-repetitive
peak rev. voltage
TJ = TJmax.
IRRM max.
@ rated VRRM @ rated VRRM
TJ = 25°C
µA
IRRM max.
Type number
Code
peak rev. voltage
TJ = TJmax.
V
TJ= 150°C
µA
V
4GBU..LS
4GBU..LSF
02
04
06
200
400
600
140
280
420
300
500
700
5
5
5
250
250
250
Forward Conduction
Parameters
4GBU..LS
Unit
Conditions
IO
Maximum DC output current
4
A
TC = 100°C, Resistive & inductive load
TC = 100°C, Capacitive load
3.2
IFSM
Maximum peak, one-cycle
90
94
t =10ms, 20ms
non-repetitive surge current,
following any rated load condition
and with rated VRRM reapplied
t = 8.3ms, 16.7ms TJ = 150°C
I2t
Maximum I2t for fusing,
initial TJ = TJ max
40
36
A2s
t =10ms
t =8.3ms
VFM
IRM
Maximum peak forward voltage
per diode
0.975
V
µA
V
TJ =25oC,IFM =2A
Typical peak reverse leakage
current per diode
5
TJ =25oC, 100%VRRM
VRRM Maximum repetitive peak
reverse voltage range
200 to600
Thermal and Mechanical Specifications
Parameters
4GBU..LS
Unit
Conditions
TJ
Operating and storage
temperature range
-55 to150
oC
Tstg
RthJC Max. thermal resistance
junction tocase
5.0
26
°C/ W
°C/ W
g(oz)
DC rated current through bridge (1)
DC rated current through bridge (1)
RthJA
Thermal resistance,
junction to ambient
Approximate weight
W
T
4 (0.14)
Mounting Torque
1.0
9.0
Nm
Bridge to Heatsink
Lb.in
Note (1): Devices mounted on 40x 40x1.5mm aluminum plate; use silicon thermal compound for maximum heat
transfer and bolt down using 3mm screw
2
www.irf.com
4GBU..LS Series
Bulletin I2789 rev. B 03/03
100
10
1
150
140
130
120
110
100
90
180˚
(Rect)
T = 25˚C
J
T = 150˚C
J
180˚
(Sine)
0.1
0.5
0
1
2
3
4
5
1
1.5
2
2.5
3
Average Forward Current (A)
Instantaneous Forward Voltage (V)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Forward Voltage Drop Characteristics
100
8
7
6
5
4
3
2
1
0
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
180˚
(Sine)
180˚
90
Initial Tj = 150˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
80
(Rect)
70
60
50
40
30
20
T = 150˚C
J
1
10
100
0
1
2
3
4
Average Forward Current (A)
Number of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 3 - Total Power Loss Characteristics
Fig. 4 - Maximum Non-Repetitive Surge Current
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3
4GBU..LS Series
Bulletin I2789 rev. B 03/03
Ordering Information Table
Device Code
4
GBU
06
LS
F
3
1
4
5
2
1
2
3
4
5
-
-
-
-
-
Bridge current
Basic Part Number
Voltage Code: code x 100 = VRRM
Low surge
Lead Forming:7.5 mm
Outline Table
4GBU..LS
4
www.irf.com
4GBU..LS Series
Bulletin I2789 rev. B 03/03
Outline Table
4GBU..LSF
Add suffix "F" for 7.5 mm equal space lead forming
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial and Consumer Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03/03
www.irf.com
5
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