50RIA10LPBF [INFINEON]
Silicon Controlled Rectifier, 78.5A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-208AC;
| 型号： | 50RIA10LPBF |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 78.5A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-208AC 栅极 触发装置 可控硅整流器 |
| 文件： | 总8页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I2401 rev. A 07/00
50RIA SERIES
MEDIUM POWER THYRISTORS
Stud Version
Features
High current rating
Excellent dynamic characteristics
dv/dt = 1000V/µs option
Superior surge capabilities
Standard package
50 A
Metric threads version available
Types up to 1600V VDRM/ VRRM
TypicalApplications
Phase control applications in converters
Lighting circuits
Battery charges
Regulated power supplies and temperature and
speed control circuit
Can be supplied to meet stringent military,
aerospace and other high-reliability requirements
Major Ratings and Characteristics
50RIA
Parameters
Units
10 to 120
50
140 to 160
50
IT(AV)
A
°C
A
@ TC
94
80
90
80
IT(RMS)
ITSM
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
1430
1200
A
1490
1257
A
I2t
10.18
9.30
7.21
KA2s
KA2s
V
6.58
VDRM/VRRM
100 to 1200
1400 to 1600
t
typical
110
- 40 to 125
µs
°C
Case Style
TO-208AC (TO-65)
q
TJ
1
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50RIA Series
Bulletin I2401 rev. A 07/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRM max.
Type number
50RIA
peak and off-state voltage (1)
repetitive peak voltage (2)
@ T = TJ max.
V
100
200
400
600
V
150
300
500
700
J mA
10
20
40
60
80
800
900
15
100
120
140
160
1000
1200
1400
1600
1100
1300
1500
1700
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/µs
(2) For voltage pulses with tp ≤ 5ms
On-state Conduction
50RIA
10to120 140to160
Parameter
Units Conditions
IT(AV)
Max. average on-state current
@ Case temperature
50
94
50
90
A
°C
180° sinusoidal conduction
IT(RMS) Max. RMS on-state current
80
80
A
A
ITSM
Max. peak, one-cycle
1430
1490
1200
1255
10.18
9.30
7.20
6.56
101.8
0.94
1200
1257
1010
1057
7.21
6.58
5.10
4.65
72.1
1.02
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
non-repetitive surge current
100% VRRM
reapplied
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
KA2s t = 10ms
No voltage
reapplied
t = 8.3ms
t = 10ms
100% VRRM
t = 8.3ms
reapplied
I2√t
Maximum I2√t for fusing
KA2√s t = 0.1 to 10ms, no voltage reapplied, TJ = TJ max.
VT(TO)1 Low level value of threshold
voltage
V
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(π x IT(AV) < I < 20 x π x IT(AV)), TJ = TJ max.
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(π x IT(AV) < I < 20 x π x IT(AV)), TJ = TJ max.
VT(TO) High level value of threshold
1.08
4.08
3.34
1.17
4.78
3.97
2
voltage
rt1
rt2
Low level value of on-state
slope resistance
High level value of on-state
slope resistance
mΩ
VTM
IH
Max. on-state voltage
1.60
1.78
V
I = 157 A, TJ = 25°C
pk
Maximum holding current
200
400
mA
TJ = 25°C. Anode supply 22V, resistive load,
Initial IT = 2A
Anode supply 6V, resistive load
IL
Latching current
2
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50RIA Series
Bulletin I2401 rev. A 07/00
Switching
Parameter
di/dt Max. rate of rise of turned-on
current DRM ≤ 600V
DRM ≤ 1600V
Typical delay time
50RIA
Units Conditions
TC = 125°C, VDM = rated VDRM
A/µs Gate pulse = 20V, 15Ω, t = 6µs, t = 0.1µs max.
V
200
100
0.9
p
r
V
ITM = (2x rated di/dt) A
t
t
TC = 25°C VDM = rated VDRM ITM = 10A dc resistive circuit
d
Gate pulse = 10V, 15Ω source, t = 20µs
p
µs
Typical turn-off time
110
TC = 125°C, ITM = 50A, reapplied dv/dt = 20V/µs
q
dir/dt = -10A/µs, VR=50V
Blocking
Parameter
50RIA
Units Conditions
TJ = TJ max. linear to 100% rated VDRM
TJ = TJ max. linear to 67% rated VDRM
dv/dt Max. critical rate of rise of
off-state voltage
200
V/µs
500 (*)
(*) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. 50RIA160S90.
Triggering
Parameter
50RIA
10
Units Conditions
PGM
Maximum peak gate power
TJ = TJ max, t ≤ 5ms
p
W
A
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
2.5
2.5
+VGM Maximum peak positive
gate voltage
20
V
-VGM Maximum peak negative
gate voltage
10
IGT
DC gate current required
to trigger
250
100
50
TJ = - 40°C
TJ = 25°C
TJ = 125°C
TJ = - 40°C
TJ = 25°C
Max. required gate trigger
current/voltage are the
lowest value which will trigger
all units 6V anode-to-cathode
applied
mA
V
VGT
DC gate voltage required
to trigger
3.5
2.5
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
TJ = TJ max
IGD
DC gate current not to trigger
DC gate voltage not to trigger
5.0
0.2
mA
V
V
DRM = rated voltage
VGD
TJ = TJ max
3
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50RIA Series
Bulletin I2401 rev. A 07/00
Thermal and Mechanical Specification
Parameter
50RIA
Units Conditions
TJ
T
Max. operating temperature range
Max. storage temperature range
- 40 to 125
- 40 to 125
°C
°C
stg
RthJC Max. thermal resistance,
junction to case
0.35
K/W DC operation
RthCS Max. thermal resistance,
case to heatsink
0.25
K/W Mounting surface, smooth, flat and greased
T
Mounting torque
Min.
2.8 (25)
3.4 (30)
28 (1.0)
Nm
Non-lubricated threads
See Outline Table
Max.
(lbf-in)
g (oz)
wt
Approximate weight
Case style
TO-208AC (TO-65)
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
TJ = TJ max.
180°
120°
90°
0.078
0.094
0.120
0.176
0.294
0.057
0.098
0.130
0.183
0.296
K/W
60°
30°
Ordering Information Table
Device Code
50 RIA 160 S90
M
2
5
3
4
1
1
2
3
4
-
-
-
-
Current code
Essential part number
Voltage code: Code x 10 = VRRM (See Voltage Rating Table)
Critical dv/dt: None = 500V/µs (Standard value)
S90 = 1000V/µs (Special selection)
5
-
None = Stud base TO-208AC (TO-65) 1/4" 28UNF-2A
M
= Stud base TO-208AC (TO-65) M6 X 1
4
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50RIA Series
Bulletin I2401 rev. A 07/00
Outline Table
Case Style TO-208AC (TO-65)
All dimensions in millimeters (inches)
130
120
110
100
90
130
120
110
100
90
50RIA Series (100V to 1200V)
(DC) = 0.35 K/W
50RIA Series (100V to 1200V)
(DC) = 0.35 K/W
R
R
thJC
thJC
Conduction Angle
Conduction Period
30°
60°
90°
30
120°
40
90°
120°
180°
50
60°
30°
180°
DC
80
0
10
20
60
0
10 20 30 40 50 60 70 80
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristic
Fig. 2 - Current Ratings Characteristic
5
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50RIA Series
Bulletin I2401 rev. A 07/00
80
100
90
80
70
60
50
40
30
20
10
0
180°
DC
180°
120°
90°
120°
70
90°
60°
30°
60
50
40
30
20
10
0
60°
30°
RMS Limit
RMS Limit
Conduction Angle
Conduction Period
50RIA Series
50RIA Series
(100V to 1200V)
(100V to 1200V)
T = 125°C
J
T = 125°C
J
0
10
20
30
40
50
0
10 20 30 40 50 60 70 80
Average On-state Current (A)
Average On-state Current (A)
Fig. 4 - On-state Power Loss Characteristics
Fig. 3 - On-state Power Loss Characteristics
At Any Rated Load Condition And With
1300
1200
1100
1000
900
1500
1400
1300
1200
1100
1000
900
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Rated V
Applied Following Surge.
RRM
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Initial T = 125°C
J
No Voltage Reapplied
Rated V
Reapplied
RRM
800
800
700
700
50RIA Series
(100V to 1200V)
50RIA Series
(100V to 1200V)
600
600
500
1
10
100
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
130
130
50RIA Series (1400Vto 1600V)
thJC
50RIA Series (1400V to 1600V)
thJC
R
(DC) = 0.35 K/W
R
(DC) = 0.35 K/W
120
110
100
90
120
110
100
90
Conduction Period
Conduction Angle
30°
60°
90°
120°
180°
90°
120°
180°
60°
30°
DC
80
80
0
5 10 15 20 25 30 35 40 45 50 55
Average On-state Current (A)
0
10 20 30 40 50 60 70 80 90
Average On-state Current (A)
Fig. 7 - Current Ratings Characteristics
Fig. 8 - Current Ratings Characteristics
6
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50RIA Series
Bulletin I2401 rev. A 07/00
90
80
70
60
50
40
30
20
10
0
120
110
100
90
80
70
60
50
40
30
20
10
0
DC
180°
120°
90°
180°
120°
90°
60°
60°
30°
30°
RMS Limit
RMS Limit
Conduction Angle
Conduction Period
50RIA Series
50RIA Series
(1400V to 1600V)
T = 125°C
(1400V to 1600V)
T = 125°C
J
J
0
5
10 15 20 25 30 35 40 45 50
Average On-state Current (A)
0
10 20 30 40 50 60 70 80
Average On-state Current (A)
Fig. 9 - On-state Power Loss Characteristics
Fig. 10 - On-state Power Loss Characteristics
1100
1000
900
800
700
600
500
1200
At Any Rated Load Condition And With
MaximumNon Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Rated V
RRM
Applied Following Surge.
1100
1000
900
800
700
600
500
400
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Initial T = 125°C
J
No Voltage Reapplied
Rated V
Reapplied
RRM
50RIA Series
(1400V to 1600V)
50RIA Series
(1400V to 1600V)
1
10
100
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 11 - Maximum Non-Repetitive Surge Current
Fig. 12 - Maximum Non-Repetitive Surge Current
1000
1000
100
100
T = 25°C
J
T = 25°C
J
T = 125°C
J
T = 125°C
J
10
10
50RIA Series (1400V to 1600V)
50RIA Series (100V to 1200V)
1
1
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
Instantaneous On-state Voltage (V)
Instantaneous On-state Voltage (V)
Fig. 13 - Forward Voltage Drop Characteristics
Fig. 14 - Forward Voltage Drop Characteristics
7
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50RIA Series
Bulletin I2401 rev. A 07/00
1
Steady State Value
= 0.35 K/W
R
thJ-hs
0.1
50RIA Series
0.01
0.001
0.01
0.1
Square Wave Pulse Duration (s)
1
10
Fig. 15 - Thermal Impedance ZthJC Characteristics
100
10
1
Rectangular gate pulse
(1) PGM = 10W, tp = 5ms
(2) PGM = 20W, tp = 2.5ms
(3) PGM = 50W, tp = 1ms
a) Recommended load line for
rated di/dt : 20V, 30 ohms; tr<=0.5 µs
b) Recommended load line for
<=30%rated di/dt : 20V, 65 ohms
tr<=1 µs
(4) PGM = 100W, tp = 500µs
(b)
(a)
(1) (2) (3) (4)
VGD
IGD
0.01
50RIA Series Frequency Limited by PG(AV)
10 100 1000
0.1
0.001
0.1
1
Instantaneous Gate Current (A)
Fig. 16 - Gate Characteristics
8
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