5961-01-263-2848 [INFINEON]
Silicon Controlled Rectifier, 22000mA I(T), 1000V V(DRM);
| 型号： | 5961-01-263-2848 |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 22000mA I(T), 1000V V(DRM) 栅 栅极 |
| 文件： | 总9页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I2403 rev. A 07/00
22RIA SERIES
MEDIUM POWER THYRISTORS
Stud Version
Features
22A
Improved glass passivation for high reliability
and exceptional stability at high temperature
High di/dt and dv/dt capabilities
Standard package
Low thermal resistance
Metric threads version available
Types up to 1600V VDRM/ VRRM
Typical Applications
Medium power switching
Phase control applications
Can be supplied to meet stringent military,
aerospace and other high-reliability requirements
Major Ratings and Characteristics
22RIA
Parameters
Units
10 to 120
22
140 to 160
22
IT(AV)
A
°C
A
@ TC
85
35
85
35
IT(RMS)
ITSM
@50Hz
@ 60Hz
@50Hz
@ 60Hz
400
340
A
420
355
A
I2t
793
575
A2s
A2s
V
724
525
VDRM/VRRM
100 to 1200
1400 to 1600
t
typical
110
- 65 to 125
µs
°C
Case Style
TO-208AA (TO-48)
q
TJ
1
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22RIA Series
Bulletin I2403 rev. A 07/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRM max.
Type number
22RIA
peak and off-state voltage (1)
repetitive peak voltage (2)
@ T = TJ max.
V
100
200
400
600
V
150
300
500
700
J mA
10
20
40
60
80
20
10
800
900
100
120
140
160
1000
1200
1400
1600
1100
1300
1500
1700
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/µs
(2) For voltage pulses with tp ≤ 5ms
On-state Conduction
22RIA
Parameter
Units Conditions
10to120 140to160
IT(AV)
Max. average on-state current
@ Case temperature
22
85
22
85
A
°C
180° sinusoidal conduction
IT(RMS) Max. RMS on-state current
35
400
420
335
355
793
724
560
515
7930
0.83
35
340
355
285
300
575
525
405
370
5750
1.01
A
A
ITSM
Max. peak, one-cycle
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100% VRRM
reapplied
No voltage
reapplied
100% VRRM
reapplied
non-repetitive surge current
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
A2s
I2√t
Maximum I2√t for fusing
A2√s
t = 0.1 to 10ms, no voltage reapplied, TJ = TJ max.
VT(TO)1 Low level value of threshold
voltage
V
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
VT(TO) High level value of threshold
0.95
14.9
13.4
1.17
12.24
10.35
(I > π x IT(AV)), TJ = TJ max.
2
voltage
rt1
rt2
Low level value of on-state
slope resistance
High level value of on-state
slope resistance
mΩ
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
VTM
Max. on-state voltage
1.70
---
---
V
I = 70 A, TJ = 25°C
pk
1.80
IH
IL
Maximum holding current
Latching current
130
200
mA
TJ = 25°C. Anode supply 6V, resistive load,
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2
22RIA Series
Bulletin I2403 rev. A 07/00
Switching
Parameter
di/dt Max. rate of rise of turned-on
current DRM ≤ 600V
DRM ≤ 800V
22RIA
Units Conditions
TJ = TJ max., VDM = rated VDRM
A/µs Gate pulse = 20V, 15Ω, t = 6µs, t = 0.1µs max.
V
200
180
160
150
p
r
V
ITM = (2x rated di/dt) A
VDRM ≤ 1000V
VDRM ≤ 1600V
t
Typical turn-on time
0.9
TJ = 25°C,
gt
at = rated VDRM/VRRM, TJ = 125°C
TJ = TJ max.,
t
Typical reverse recovery time
Typical turn-off time
4
µs
rr
ITM = IT(AV), t > 200µs, di/dt = -10A/µs
p
t
110
TJ = TJ max., ITM = IT(AV), t > 200µs, VR = 100V,
p
q
di/dt = -10A/µs, dv/dt = 20V/µs linear to
67% VDRM, gate bias 0V-100W
(*) t = 10µsup to 600V, t = 30µs up to 1600V available on special request.
q
q
Blocking
Parameter
22RIA
Units Conditions
TJ = TJ max. linear to 100% rated VDRM
TJ = TJ max. linear to 67% rated VDRM
dv/dt Max. critical rate of rise of
off-state voltage
100
V/µs
300 (*)
(**) Available with: dv/dt = 1000V/µs, to complete code add S90 i.e. 22RIA160S90.
Triggering
Parameter
22RIA
8.0
Units Conditions
PGM
Maximum peak gate power
TJ = TJ max.
W
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
2.0
1.5
A
V
TJ = TJ max.
TJ = TJ max.
-VGM Maximum peak negative
gate voltage
10
IGT
DC gate current required
to trigger
90
60
35
3.0
TJ = - 65°C
TJ = 25°C
TJ = 125°C
TJ = - 65°C
Max. required gate trigger current/
voltage are the lowest value which
will trigger all units 6V anode-to-
cathode applied
mA
VGT
DC gate voltage required
to trigger
2.0
1.0
2.0
V
V
TJ = 25°C
TJ = 125°C
IGD
DC gate current not to trigger
DC gate voltage not to trigger
mA
TJ = TJ max., VDRM = rated value
Max. gate current/ voltage not to
VGD
0.2
V
TJ = TJ max.
trigger is the max. value which
DRM = rated value will not trigger any unit with rated
VDRM anode-to-cathode applied
V
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3
22RIA Series
Bulletin I2403 rev. A 07/00
Thermal and Mechanical Specification
Parameter
22RIA
Units Conditions
TJ
T
Max. operating temperature range
Max. storage temperature range
- 65 to 125
- 65 to 125
°C
°C
stg
RthJC Max. thermal resistance,
junction to case
0.86
K/W DC operation
RthCS Max. thermal resistance,
case to heatsink
0.35
K/W Mounting surface, smooth, flat and greased
T
Mounting torque
to nut
to device
25
20(27.5)
0.23(0.32)
2.3(3.1)
lbf-in Lubricated threads
0.29
2.8
kgf.m (Non-lubricated threads)
Nm
wt
Approximate weight
Case style
14 (0.49)
g (oz)
TO-208AA (TO-48)
See Outline Table
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
TJ = TJ max.
180°
120°
90°
0.21
0.25
0.31
0.45
0.76
0.15
0.25
0.34
0.47
0.76
K/W
60°
30°
Ordering Information Table
Device Code
22 RIA 160
M
S90
2
5
3
4
1
1
2
3
4
-
-
-
-
Current code
Essential part number
Voltage code: Code x 10 = VRRM (See Voltage Rating Table)
None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A
M
= Stud base TO-208AA (TO-48) M6 X 1
5
-
Critical dv/dt: None = 300V/µs (Standard value)
S90 = 1000V/µs (Special selection)
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4
22RIA Series
Bulletin I2403 rev. A 07/00
Outline Table
CaseStyleTO-208AA(TO-48)
All dimensions in millimeters (inches)
130
120
110
100
90
130
22RIA Series (100 to 1200V)
(DC) = 0.86 K/W
22RIA Series (100 to 1200V)
(DC) = 0.86 K/W
R
R
thJC
thJC
120
110
100
90
Conduction Angle
Conduction Period
30°
30°
60°
60°
90°
90°
120°
120°
180°
180°
DC
30
80
0
80
5
10
15
20
25
0
10
20
40
5
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristic
Fig. 2 - Current Ratings Characteristic
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22RIA Series
Bulletin I2403 rev. A 07/00
40
180°
35
30
25
20
15
10
5
120°
90°
60°
30°
RMS Limit
Conduction Angle
1
0
K
/
W
22RIA Series
(100 to 1200V)
T = 125°C
J
0
0
5
10
15
20
205
25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-state Power Loss Characteristics
50
45
40
35
30
25
20
15
10
5
DC
180°
120°
90°
t
h
S
A
2
K
/
W
60°
30°
RMS Limit
5
K
/
W
Conduction Period
1
0
22RIA Series
K
/
W
(100 to 1200V)
T = 125°C
J
0
0
5
10 15 20 25 30 305
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Average On-state Current (A)
Fig. 4 - On-state Power Loss Characteristics
375
350
325
300
275
250
225
200
175
150
400
375
350
325
300
275
250
225
200
175
150
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Rated V
Applied Following Surge.
RRM
Initial T = 125°C
J
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
No Voltage Reapplied
Rated V
Reapplied
RRM
22RIA Series
(100 to 1200V)
22RIA Series
(100 to 1200V)
1
10
100
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
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6
22RIA Series
Bulletin I2403 rev. A 07/00
1000
100
10
T = 25°C
J
T = 125°C
J
22RIA Series
(100 to 1200V)
1
0.5
1
1.5
2
2.5
3
Instantaneous On-state Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
130
130
120
110
100
90
22RIA Series (1400 to 1600V)
thJC
22RIA Series (1400 to 1600V)
(DC) = 0.86 K/W
R
(DC) = 0.86 K/W
R
thJC
120
110
100
90
Conduction Angle
Conduction Period
30°
30°
60°
60°
90°
90°
120°
120°
20
180°
180°
DC
30
80
80
0
5
10
15
20
25
0
10
40
Average On-state Current (A)
Average On-state Current (A)
Fig. 9 - Current Ratings Characteristics
Fig. 8 - Current Ratings Characteristics
40
1
180°
.
5
K
35
30
25
20
15
10
5
120°
90°
60°
30°
t
/
h
W
2
S
A
.5
K
/
W
4
K
/
W
RMS Limit
7
K
/
W
1
Conduction Angle
0
K
/
W
22RIA Series
(1400 to 1600V)
T = 125°C
J
0
0
5
10
15
20
205
25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 10 - On-state Power Loss Characteristics
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7
22RIA Series
Bulletin I2403 rev. A 07/00
55
R
DC
180°
120°
90°
50
45
40
35
30
25
20
15
10
5
t
h
S
A
=
0
.
5
K
2
/
K
W
60°
/
W
-
D
30°
e
l
t
a
R
RMS Limit
5
K
/
W
Conduction Period
7
K
/
W
22RIA Series
1
0
K
(1400 to 1600V)
/
W
T = 125°C
J
0
0
5
10 15 20 25 30 305
25
50
75
100
125
Average On-state Current (A) Maximum Allowable Ambient Temperature (°C)
Fig. 11 - On-state Power Loss Characteristics
300
280
260
240
220
200
180
160
140
340
320
300
280
260
240
220
200
180
160
140
120
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Rated V
Applied Following Surge.
RRM
Initial T = 125°C
J
Initial T = 125°C
J
@60 Hz 0.0083 s
No Voltage Reapplied
Rated V
RRM Reapplied
@50 Hz 0.0100 s
22RIA Series
(1400 to 1600V)
22RIA Series
(1400 to 1600V)
1
10
100
0.01
0.1
Pulse Train Duration (s)
Fig. 13 - Maximum Non-Repetitive Surge Current
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 12 - Maximum Non-Repetitive Surge Current
1000
T = 25°C
J
T = 125°C
J
100
10
1
22RIA Series
(1400 to 1600V)
0
1
2
3
4
5
6
Instantaneous On-state Voltage (V)
Fig. 14 - Forward Voltage Drop Characteristics
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8
22RIA Series
Bulletin I2403 rev. A 07/00
1
Steady State Value
= 0.86 K/W
R
thJC
(DCOperation)
0.1
22RIA Series
0.01
0.001
0.01
0.1
Square Wave Pulse Duration (s)
1
10
Fig. 15 - Thermal Impedance ZthJC Characteristics
100
10
1
Rectangular gate pulse
(1) PGM = 16W, tp = 4ms
a) Recommended load line for
rated di/dt : 10V, 20ohms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 60W, tp = 1ms
tr <=0.5 µs, tp >= 6 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 65ohms
tr<=1 µs, tp >= 6 µs
(a)
(b)
(4)
(3)
(2)
(1)
VGD
IGD
22RIA Series Frequency Limited by PG(AV)
0.1
0.001
0.01
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 16 - Gate Characteristics
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http://www.irf.com
Fax-On-Demand: +44 1883 733420
Data and specifications subject to change without notice.
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9
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