5962-1324901KXA [INFINEON]

Rad hard solid state relays;


型号：	5962-1324901KXA
厂家：	Infineon
描述：	Rad hard solid state relays
文件：	总7页 (文件大小：115K)
中文：	中文翻译
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PD-96983A

Radiation Hardended,

Solid-State Relay

with Buffered Inputs

RDHA710SE10A2FK

Dual, 100V, 10A

Product Summary

Part

Breakdown Current

tr / tf

Logic Drive

Number

Voltage

RDHA710SE10A2FK

100V

10A

Fast

3.3V

8-PIN SURFACE MOUNT

Description

The RDHA710SE10A2FK is a radiation hardened

dual solid-state relay in a hermetic package. It is

configured as a dual, single-pole-single-throw

(SPST) normally open relay with common input

supply. This device is characterized for 100 krad(Si)

total ionizing dose and neutron fluence level of

1.8E¹²n/cm². The input and output MOSFETs utilize

International Rectifier’s R5 technology. The

RDHA710SE10A2FK is optically coupled and

actuated by standard logic inputs.

Features:

Total Dose Capability to 100 krad(Si)

Neutron Fluence Level of 1.8E¹²n/cm²

Optically Coupled

1000V_DCInput to Output Isolation

Buffered Input Stage

3.3V Compatible Logic Level Input

Controlled Switching Times

Hermetically Sealed Package

Absolute Maximum Ratings per Channel @ Tj=25°C (unless otherwise specified)

Parameter

Symbol

Value

Units

100

Output Maximum Voltage

Output Current

±7.5

±10

Input Buffer Voltage - (pins 4 & 6)

Input Buffer Current

Input Supply Voltage (pin 5)

Input Supply Current

5.25

Power Dissipation

DISS

Operating Temperature Range

Storage Temperature Range

Lead Temperature

-55 to +125

-65 to +150

300

°C

For notes, please refer to page 3

www.irf.com

05/18/12

RDHA710SE10A2FK

General Characteristics per Channel @ -55°C T_C+125°C (Unless Otherwise Specified)

Parameter

Group A

Test Conditions

Symbol Min. Typ. Max. Units

Subgroups

Input Buffer Threshold Voltage

Input-to-Output Leakage Current

= 5.0V, I = 10A

3.0

IN(TH)

= 1.0KVdc, dwell = 5.0s

µA

1.0

I-O

= 0.1V, f = 1.0MHz, V =25V

Output Capacitance

365

OSS

= 25°C

= 3.3V, V = 5.0V

Thermal Resistance

MTBF (Per Channel)

1.7

°C/W

MHrs

THJC

MIL-HDBK-217F, SF@Tc= 25°C

6.0

Pre-Irradiation

Electrical Characteristics per Channel @ -55°C T_C+125°C (Unless Otherwise Specified)

Parameter

Group A

Subgroups

Test Conditions

Symbol Min. Typ. Max. Units

= 3.3V

-- 0.070 0.100

Ω

Output On-Resistance

DS(ON)

= 5.0V, I = 10A

0.125 0.165

= 0.1V, V = 100V

250

Output Leakage Current

Input Supply Current

Input Buffer Current

= 0.1V, V = 80V

= 5.0V, I = 10A

1,2,3

1.0

3.0

= 3.3V

off

2,3

=3.3V, V =5.0V, V =30V

Turn-On Delay

Turn-Off Delay

1,2,3

0.18 0.45

0.50 0.75

0.25 0.40

1.50 1.80

RC = 7.0Ω/100µF, PW = 50ms

=0.1V, V =5.0V, V =30V

Ω

RC = 7.0 /100 F, PW = 50ms

=3.3V, V =5.0V, V =30V

Rise Time

Fall Time

RC = 7.0Ω/100µF, PW = 50ms

=0.1V, V =5.0V, V =30V

RC = 7.0Ω/100µF, PW = 50ms

For notes, please refer to page 3

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RDHA710SE10A2FK

Post Total Dose Irradiation ,,

Electrical Characteristics per Channel @ 25°C (Unless Otherwise Specified)

Parameter

Group A

Test Conditions

Symbol Min. Typ. Max. Units

Subgroups

= 3.3V, V = 5.0V, I = 10A

DS(ON)

0.070 0.100

Ω

Output On-Resistance

Input Supply Current

Output Leakage Current

Input Buffer Current

= 5.0V, I = 10A

= 0.1V, V = 100V

= 3.3V

1.0

=3.3V, V =5.0V, V =30V

Turn-On Delay

Turn-Off Delay

Rise Time

0.18 0.45

0.50 0.75

0.25 0.40

1.50 1.80

off

RC = 7.0Ω/100µF, PW = 50ms

=0.1V, V =5.0V, V =30V

RC = 7.0Ω/100µF, PW = 50ms

=3.3V, V =5.0V, V =30V

RC = 7.0Ω/100µF, PW = 50ms

=0.1V, V =5.0V, V =30V

Fall Time

RC = 7.0Ω/100µF, PW = 50ms

Notes for Maximum Ratings and Electrical Characteristic Tables

Specification is guaranteed by design

Rise and fall times are controlled internally

Inputs protected for V_IN< 1.0V and V_IN> 7.5V

m Optically coupled Solid State Relays (SSRs) have relatively slow turn on and turn off times. Care must be taken to

insure that transient currents do not cause violation of SOA. If transient conditions are present, IR recommends a

complete simulation to be performed by the end user to insure compliance with SOA requirements as specified in the

IRHNJ57130 data sheet

n While the SSR design meets the design requirements specified in MIL-PRF-38534, the end user is responsible for

product derating, as required for the application

o Reference Figures 3 & 4 for Switching Test Circuits and Wave Form

Total Dose Irradiation with Input Bias. 10mA I_DDapplied and V_DS= 0 during Irradiation

Total Dose Irradiation with Output Bias. 80 Volts V_DSapplied and I_DD= 0 during Irradiation

International Rectifier does not currently have a DSCC certified Radiation Hardness Assurance Program

www.irf.com

RDHA710SE10A2FK

100

125

150

T_C, Case Temperature (°C)

Fig 1: Maximum Drain Current Vs Case Temperature per Channel

Pin 1 - OUT 1+

Pin 4 - INPUT 1

Opto

Isolation

Pin 2 - OUT 1-

Pin 8 - OUT 2+

Pin 3 - GND

Pin 5 - V_DD

Pin 6 - INPUT 2

Opto

Isolation

Pin 7 - OUT 2-

Fig 2: Typical Application

Radiation Performance

International Rectifier Radiation Hardened Solid State Relays are tested to verify their hardness capability.

The hardness assurance program at IR uses a Cobalt-60 (⁶⁰Co) Source and heavy ion irradiation. Both pre-

and post- irradiation performance are tested and specified using the same drive circuitry and test conditions

to provide a direct comparision.

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RDHA710SE10A2FK

100 µF

Fig 3: Switching Test Circuit (Only one channel shown)

Fig 4: Switching Test Waveform

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RDHA710SE10A2FK

Case Outline and Dimensions — 8 Pin Surface Mount Package

Pin Assignment

Pin #

Pin Description

OUT 1 +

OUT 1 -

INPUT GND

INPUT 1

INPUT 2

OUT 2 -

OUT 2 +

Notes

1. Dimensioning and Tolerancing per ASME Y14.5SM-1994

2. Controlling Dimension: Inch

3. Dimensions are shown in inches

4. Tolerances are +/- 0.005 UOS

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RDHA710SE10A2FK

Part Numbering Nomenclature

RD H A 7 10 SE 10 A 2 F K

Screening Level

K = K Level Screening

per MIL-PRF-38534

Device Type

RD = DC Solid State Relay

Features

F = 3.3 Volt Buffered Fast

Radiation Hardening

Blank = No Rad Tolerance

H = RAD Hard

Poles

2 = Double Pole

Generation

A = Current design

Radiation Level

7 = 100K Rad (Si)

Throw Configuration

A = Single Throw, Normally Open

Current

10 = 10A

Voltage

10 = 100 Volts

Package

SE = 8 Pin Surface Mount

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 05/2012

www.irf.com

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