60LQ045SCVPBF [INFINEON]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 60A, 45V V(RRM), Silicon, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN;
| 型号： | 60LQ045SCVPBF |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 1 Element, 60A, 45V V(RRM), Silicon, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN 二极管 |
| 文件： | 总4页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -20504B
60LQ045
60 Amp
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Desciption/Features
The 60LQ045 Schottky rectifier has been expressly
designed to meet the rigorous requirements of hi -rel
environments. It is packaged in the hermetic surface
mount SMD-1 ceramic package and has extremely low
reverse leakage at high temperature. Full MIL-PRF-19500
quality conformance testing is available on source control
drawings to JANTX, JANTXV and S levels. Typical
applications include switching power supplies and
resonant power converters.
Characteristics
60LQ045
Units
I
F(AV) Rectangular
waveform
60
A
VRRM
45
V
A
V
IFSM @ tp = 8.3ms sine
VF @ 60Apk, TJ = 25°C
400
0.68
• Hermetically sealed
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
TJ,TstgOperating and storage -55 to 150
°C
• Surface Mount
•
Lightweight
CASE STYLE
3
CATHODEANODEANODE
IR Case Style SMD-1
Dimensionsinmillimetersand(inches)
www.irf.com
1
3/16/99
60LQ045
Voltage Ratings
Part number
Max. DC Reverse Voltage (V)
60LQ045
45
VR
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
60LQ045 Units
Conditions
IF(AV) Max. AverageForwardCurrent
60
A
50% duty cycle @ TC = 105°C, rectangular waveform
See Fig. 5
IFSM Max. Peak One Cycle Non - Repetitive
Surge Current
400
A
@ tp = 8.3 ms sine
Electrical Specifications
Parameters
60LQ045 Units
Conditions
VFM
Max. ForwardVoltageDrop
0.51
0.68
0.82
0.69
0.60
0.74
0.80
45
V
@ 10A
See Fig. 1
V
@ 60A
@ 120A
@ 10A
@ 60A
@ 120A
TJ = 25°C
V
V
TJ = -55°C
TJ = 125°C
V
V
IRM
Max. Reverse Leakage Current
See Fig. 2
mA
mA
pF
nH
TJ = 25°C VR = rated VR
TJ = 125°C
CT
L S
Max. Junction Capacitance
Typical Series Inductance
2900
2.8
VR = 5VDC, ( 100KHz to 1MHz) 25°C
Measured from center of bond pad to end of anode
bondingwire
Thermal-Mechanical Specifications
Parameters
60LQ045 Units
Conditions
TJ
Max.JunctionTemperatureRange
-55 to 150
-55 to 150
1.0
°C
Tstg
Max. Storage Temperature Range
°C
RthJC Max. Thermal Resistance, Junction
to Case
°C/W
DC operation
DC operation
See Fig. 4
RthJC Max. Thermal Resistance, Junction
to case (Per Package)
0.50
°C/W
wt
Weight (Typical)
Die Description (Square)
Case Style
2.6
g
0.200
inches
SMD-1
Pulse Width < 300µs, Duty Cycle < 2%
Pins 2 and 3 externally tied together
2
www.irf.com
60LQ045
100
10
TJ = 150°C
125°C
100°C
1
0.1
25°C
0.01
0.001
A
0
10
20
30
40
50
Reverse Voltage - VR (V)
150°C
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
10000
TJ = 25°C
A
50
1000
0
10
20
30
40
Forward Voltage Drop - VFM (V)
Reverse Voltage - V R(V)
Fig. 1 - Max. Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
10
P
D M
1
t
D = 0.50
1
D = 0.33
D = 0.25
D = 0.17
t
2
Notes:
1. Duty factor D =
t
/ t
D = 0.08
1
2
Single Pulse
(Thermal Resistance)
2. Peak T = P
x Z
+ T
J
1
D M
thJC
C
A
0.1
0.0001
0.001
0.01
0.1
10
t1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
www.irf.com
3
60LQ045
160
140
120
100
80
300
200
100
0
D = 0.08
D = 0.17
D = 0.25
D = 0.33
D = 0.50
60LQ045
R thJC (DC) = 1.0°C/W
DC
RMS Limit
DC
A
A
60
0
20
40
60
80
100
0
20
40
60
80
100
Average Forward Current - IF (A)
Average Forward Current - IF (A)
Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
Fig. 6 - Forward Power Loss
Characteristics
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice. 3/99
4
www.irf.com
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