60LQ045SCV [INFINEON]

Rectifier Diode, Schottky, 1 Phase, 1 Element, 60A, 45V V(RRM), Silicon, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN;


型号：	60LQ045SCV
厂家：	Infineon
描述：	Rectifier Diode, Schottky, 1 Phase, 1 Element, 60A, 45V V(RRM), Silicon, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN
文件：	总4页 (文件大小：52K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD-20504C

SCHOTTKYRECTIFIER

HIGH EFFICIENCY SERIES

60LQ045

60A, 30V

Major Ratings and Characteristics

Description/Features

The 60LQ045 Schottky rectifier has been expressly

designed to meet the rigorous requirements of hi-rel

environments. It is packaged in the hermetic surface mount

SMD-1 ceramic package. The device's forward voltage

drop and reverse leakage current are optimized for the

lowest power loss and the highest circuit efficiency for

typical high frequency switching power supplies and

resonant power convertors. Full MIL-PRF-19500 quality

conformance testing is availble on control drawings to

TX, TXV and S quality levels.

Characteristics

I_F(AV)

60LQ045 Units

V_RRM

I_FSM@ tp = 8.3ms half-sine

400

0.6

V @ 60Apk, T_J=125°C

T_J, T_stgOperating and storage -55 to 150

°C

• Hermetically Sealed

• Low Forward Voltage Drop

• High Frequency Operation

•

Guard Ring for Enhanced Ruggedness and Long term

Reliability

• Surface Mount

• Lightweight

CASE STYLE

CATHODEANODEANODE

Case Outline and Dimensions - SMD-1

www.irf.com

03/20/02

60LQ045

Voltage Ratings

Part number

Max. DC Reverse Voltage (V)

60LQ045

V_R

V_RWMMax. Working Peak Reverse Voltage (V)

Absolute Maximum Ratings

Parameters

Limits Units

Conditions

I_F(AV)Max. AverageForwardCurrent

50% duty cycle @ T_C= 105°C, square waveform

See Fig. 5

I_FSMMax. Peak One Cycle Non - Repetitive

Surge Current

400

@ t_p= 8.3 ms half-sine

ElectricalSpecifications

Parameters

Limits Units

Conditions

V_FM

Max. ForwardVoltageDrop

0.68

0.82

0.6

@ 60A

@ 120A

@ 60A

T_J= 25°C

T_J= 125°C

V_R= rated V_R

See Fig. 1

0.74

0.8

@ 120A

T_J= 25°C

I_RM

Max. Reverse Leakage Current

See Fig. 2

T_J= 125°C

C_T

Max. Junction Capacitance

Typical Series Inductance

2900

5.9

V_R= 5V_DC, ( 1MHz, 25°C )

L _S

Measured from center of cathode pad to center of

anodepad

Thermal-MechanicalSpecifications

Parameters

Limits Units

Conditions

T_J

Max.JunctionTemperatureRange

-55 to 150

1.0

°C

T_stg

Max.StorageTemperatureRange

°C

R_thJCMax. Thermal Resistance, Junction

to Case

°C/W

DCoperation

See Fig. 4

Weight(Typical)

Die Size

2.6

200X200

mils

Case Style

SMD-1

Pulse Width < 300µs, Duty Cycle < 2%

Pins 2 and 3 externally tied together

www.irf.com

60LQ045

100

T_J= 150°C

125°C

100°C

1000

100

0.1

25°C

0.01

0.001

Reverse Voltage - V_R(V)

Fig. 2 - Typical Values of Reverse Current

Vs. Reverse Voltage

Tj = 125°C

Tj = 25°C

1 0 0 0 0

0.0

0.2

0.4

0.6

0.8

1.0

Forward Voltage Drop - V (V)

T_J= 25°C

Fig. 1 - Max. Forward Voltage Drop Characteristics

5 0

1 0 0 0

1 0

2 0

3 0

4 0

Reverse Voltage - V (V)

Fig. 3 - Typical Junction Capacitance Vs.

Reverse Voltage

www.irf.com

60LQ045

D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T =P

x Z

+ T

thJC

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig. 4 - Max. Thermal Impedance Z_thJCCharacteristics

180

60LQ045

thJC

160

= 1.0°C/W

140

120

100

Average Forward Current - I

(A)

F(AV)

Fig. 5 - Max. Allowable Case Temperature Vs.

Average Forward Current

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 03/02

www.irf.com

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