80RIA120 [INFINEON]
PHASE CONTROL THYRISTORS; 相位控制晶闸管
| 型号： | 80RIA120 |
| 厂家： | 
Infineon |
| 描述： | PHASE CONTROL THYRISTORS |
| 文件： | 总9页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25201 rev. B 03/03
80RIA SERIES
PHASE CONTROL THYRISTORS
Stud Version
Features
Hermetic glass-metal seal
80A
International standard case TO-209AC (TO-94)
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters
IT(AV)
80RIA
80
Unit
A
@ TC
85
°C
IT(RMS)
ITSM
125
1900
1990
18
A
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
A
A
I2t
KA2s
KA2s
16
VDRM/VRRM
400 to 1200
110
V
case style
t
typical
µs
q
TO-209AC (TO-94)
TJ
- 40 to 125
°C
1
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80RIA Series
Bulletin I25201 rev. B 03/03
ELECTRICALSPECIFICATIONS
Voltage Ratings
Voltage
VDRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRM max.
@ TJ = 125°C
mA
Type number Code
peak and off-state voltage
repetitive peak voltage
V
V
40
400
500
80RIA
80
800
900
15
120
1200
1300
On-state Conduction
Parameter
80RIA
Units Conditions
IT(AV) Max. average on-state current
@ Case temperature
80
85
A
180° conduction, half sine wave
°C
IT(RMS) Max. RMS on-state current
125
1900
1990
1600
1675
18
A
DC @ 75°C case temperature
ITSM
Max. peak, one-cycle
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
non-repetitive surge current
A
100% VRRM
reapplied
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
No voltage
reapplied
100% VRRM
reapplied
16
KA2s
12.7
11.7
180.5
I2√t
Maximum I2√t for fusing
KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold
voltage
0.99
1.13
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
VT(TO) High level value of threshold
2
(I > π x IT(AV)),TJ = TJ max.
voltage
rt1
Low level value of on-state
slope resistance
2.29
1.84
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
mΩ
rt2
High level value of on-state
slope resistance
(I > π x IT(AV)),TJ = TJ max.
VTM
IH
Max. on-state voltage
Maximum holding current
Typical latching current
1.60
200
400
V
I = 250A, TJ = 25°C t = 10ms sine pulse
pk p
mA
TJ = 25°C, anode supply 12V resistive load
IL
2
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80RIA Series
Bulletin I25201 rev. B 03/03
Switching
Parameter
80RIA
300
Units
Conditions
T = 125°C, V = rated VDRM, ITM = 2xdi/dt snubber
di/dt
Max. non-repetitive rate of rise
of turned-on current
d
J
A/µs 0.2µF, 15Ω, Gate pulse: 20V, 65Ω, t = 6µs, t = 0.5µs
p
r
Per JEDEC Standard RS-397, 5.2.2.6.
Gate pulse: 10V, 15Ω source, t = 6µs, t = 0.1µs,
p
r
t
Typical delay time
Typical turn-off time
1
d
V
= rated VDRM, I = 50Adc, TJ = 25°C.
TM
d
µs
ITM = 50A, TJ = TJ max, di/dt = -5A/µs min., VR = 50V,
t
110
q
dv/dt = 20V/µs, Gate bias: 0V 25Ω, t = 500µs
p
Blocking
Parameter
80RIA
500
Units
Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
V/µs TJ = 125°C exponential to 67% rated VDRM
IRRM
IDRM
Max. peak reverse and off-state
leakage current
15
mA
TJ = 125°C rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
80RIA
Units
Conditions
PGM
12
3
TJ = TJ max, t ≤ 5ms
p
W
A
TJ = TJ max, f = 50Hz, d% = 50
3
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
10
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
IGT
Max. DC gate current required
to trigger
270
120
60
TJ = - 40°C
TJ = 25°C
mA
V
Max. required gate trigger/ cur-
TJ = 125°C
TJ = - 40°C
TJ = 25°C
TJ = 125°C
rent/ voltage are the lowest value
which will trigger all units 6V an-
ode-to-cathode applied
VGT
Max. DC gate voltage required
to trigger
3.5
2.5
1.5
6
IGD
DC gate current not to trigger
DC gate voltage not to trigger
mA
V
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
TJ = TJ max
VGD
0.25
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3
80RIA Series
Bulletin I25201 rev. B 03/03
Thermal and Mechanical Specification
Parameter
80RIA
Units Conditions
°C
TJ
T
Max.operatingtemperaturerange
Max. storagetemperaturerange
-40 to 125
-40 to 150
stg
RthJC Max. thermalresistance,
0.30
0.1
DC operation
K/W
junction to case
RthCS Max. thermalresistance,
Mounting surface, smooth, flat and greased
case to heatsink
T
Mountingtorque, ±10%
15.5 (137)
14 (120)
130
Non lubricated threads
Lubricated threads
Nm
(lbf-in)
wt
Approximateweight
Case style
g
TO-209AC(TO-94)
See Outline Table
∆RthJ-C Conduction
(The following table shows the increment of thermal resistence RthJ-C when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
180°
120°
90°
0.042
0.050
0.064
0.095
0.164
0.030
0.052
0.070
0.100
0.165
K/W
TJ = TJ max.
60°
30°
Ordering Information Table
Device Code
8
0
RIA 120
1
2
3
4
1
2
-
-
ITAV x 10A
0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
RIA = Essential part number
3
4
5
-
-
-
Voltage code: Code x 10 = VRRM (See Voltage Rating Table)
None = Stud base 1/2"-20UNF- 2A threads
NOTE: For Metric Device M12 x 1.75 E6 Contact factory
4
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80RIA Series
Bulletin I25201 rev. B 03/03
Outline Table
GLASS METAL SEAL
16.5 (0.65) MAX.
8.5 (0.3) DIA.
.
2.5 (0.10) MAX.
N
I
M
)
7
4.3 (0.17) DIA.
3
.
0
(
5
.
9
FLEXIBLE LEAD
2
C.S. 16mm
(.025 s.i.)
2
RED SILICON RUBBER
RED CATHODE
C.S. 0.4 mm
(.0006 s.i.)
Fast-on Terminals
AMP. 280000-1
REF-250
WHITE GATE
215 (8.46)
10 (0.39)
RED SHRINK
WHITE SHRINK
23.5 (0.92) MAX. DIA.
SW 27
1/2"-20UNF-2A *
29.5 (1.16) MAX.
Case Style TO-209AC (TO-94)
All dimensions in millimeters (inches)
* FOR METRIC DEVICE: M12 X 1.75 E6
CONTACT FACTORY
130
120
110
100
90
130
80RIA Series
80RIA Series
R
thJC
(DC) = 0.30 K/W
R
(DC) = 0.30 K/W
thJC
120
110
100
90
Conduction Period
Conduction Angle
30°
60°
90°
30°
120°
60°
90°
180°
80
120°
DC
180°
80
70
0
10 20 30 40 50 60 70 80 90
Average On-state Current (A)
0
20 40
60 80 100 120 140
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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5
80RIA Series
Bulletin I25201 rev. B 03/03
120
180°
120°
90°
60°
30°
110
100
90
80
70
60
50
40
30
20
10
0
RM S Lim it
2
3
K
/
W
W
Conduction Angle
80RIA Series
K
/
T = 125°C
J
0
10 20 30 40 50 60 70
Average On-state Current (A)
8
0
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-state Power Loss Characteristics
180
160
140
120
100
80
DC
180°
120°
90°
60°
30°
R
=
0
.
4
K
/
W
-
D
e
l
t
a
R
RM S Lim it
Conduction Period
80RIA Series
60
40
20
T = 125°C
J
0
0
20 40 60 80 100 120
Average On-state Current (A)
1
25
50
75
100
125
Fig. 4 - On-state Power Loss Characteristics
1800
1600
1400
1200
1000
800
2000
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
Of Conduction May Not Be Maintained.
At Any Rated Load Condition And With
1900
1800
1700
1600
1500
1400
1300
1200
1100
1000
900
Rated V
Applied Following Surge.
RRM
Initial T = 125°C
J
Initial T = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
No Voltage Reapplied
Rated V
Reapplied
RRM
80RIA Series
80RIA Series
800
700
1
10
100
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
6
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80RIA Series
Bulletin I25201 rev. B 03/03
10000
1000
100
10
T = 25°C
J
T = 125°C
J
80RIA Series
1
0.5
1
1.5
InstantaneousOn-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
2
2.5
3
3.5
4
4.5
5
1
0.1
Steady State Value
= 0.30 K/W
R
thJC
(DC Operation)
0.01
0.001
80RIA Series
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
100
10
1
Rectangular gate pulse
(1) PGM = 100W, tp = 500µs
(2) PGM = 50W, tp = 1ms
(3) PGM = 20W, tp = 2.5ms
(4) PGM = 10W, tp = 5ms
a) Recommended load line for
rated di/dt : 20V, 30ohms; tr<=0.5 µs
b) Recommended load line for
<=30%rated di/dt : 20V, 65ohms
tr<=1 µs
(1) (2)
(4)
(3)
(a)
(b)
VGD
Frequency Limited by PG(AV)
10 100 1000
IGD
0.01
Device: 80RIA Series
0.1
0.1
0.001
1
InstantaneousGate Current (A)
Fig. 9 - Gate Characteristics
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7
80RIA Series
Bulletin I25201 rev. B 03/03
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03 /03
8
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This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
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