85EPF12J [INFINEON]

Rectifier Diode, 1 Phase, 1 Element, 85A, 1200V V(RRM), Silicon, TO-247AC, POWIRTAB-1;
85EPF12J
型号: 85EPF12J
厂家: Infineon    Infineon
描述:

Rectifier Diode, 1 Phase, 1 Element, 85A, 1200V V(RRM), Silicon, TO-247AC, POWIRTAB-1

软恢复二极管 快速软恢复二极管 局域网
文件: 总7页 (文件大小:148K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
I2153 rev. C 01/2000  
QUIETIR Series  
85EPF..HV  
FAST SOFT RECOVERY  
RECTIFIER DIODE  
IF(RMS) = 160A  
VF  
trr  
< 1.4V @ 100A  
= 95ns  
VRRM 800 to 1200V  
Description/Features  
Major Ratings and Characteristics  
The 85EPF.. fast soft recoveryQUIETIRrectifier series  
has been optimized for combined short reverse recovery  
Characteristics  
85EPF.. Units  
time and low forward voltage drop.  
The glass passivation ensures stable reliable operation in  
the most severe temperature and power cycling  
I
Rect.Conduction  
50%dutyCycle  
@ TC = 85°C  
85  
A
F(AV)  
conditions.  
AvailableinthenewPowIRtabTM package,thisnewseries  
is suitable for a large range of applications combining  
I
160  
800to1200  
1100  
A
V
F(RMS)  
excellent die to footprint ratio and sturdeness connectivity  
for use in high current environments.  
V
I
range(*)  
RRM  
A
FSM  
Typical applications are both:  
V
@100A,T =25°C  
J
1.4  
V
Output rectification and freewheeling in  
inverters, choppers and converters  
Input rectifications where severe  
F
t
@1A,-100A/µs  
range  
95  
ns  
°C  
rr  
T
-40to150  
J
restrictions on conducted EMI should be met.  
Case Styles  
85EPF..  
85EPF..J  
(*) for higher voltage up to 1600V contact factory  
1
85EPF.. HV QUIETIR Series  
I2153 rev. C 01/2000  
Voltage Ratings  
VRRM , maximum  
peak reverse voltage  
V
VRSM , maximum non repetitive  
IRRM  
150°C  
mA  
peak reverse voltage  
V
Part Number  
85EPF08  
85EPF10  
800  
900  
1000  
1100  
15  
85EPF12  
1200  
1300  
Absolute Maximum Ratings  
Parameters  
85EPF..  
85  
Units  
A
Conditions  
IF(AV) Max.AverageForwardCurrent  
@TC=85°C,180°conductionhalfsinewave  
IFSM Max.PeakOneCycleNon-Repetitive  
SurgeCurrent  
1100  
1250  
5000  
7000  
70000  
10msSinepulse,ratedVRRMapplied  
10msSinepulse,novoltagereapplied  
10msSinepulse,ratedVRRMapplied  
10msSinepulse,novoltagereapplied  
t=0.1to10ms,novoltagereapplied  
A
I2t  
Max.I2tforfusing  
A2s  
I2t Max.I2tforfusing  
A2s  
Electrical Specifications  
Parameters  
85EPF..  
1.36  
Units  
V
Conditions  
VFM Max. ForwardVoltageDrop  
@ 85A, TJ = 25°C  
rt  
Forwardsloperesistance  
4.03  
0.87  
0.1  
mΩ  
TJ = 150°C  
VF(TO) Thresholdvoltage  
V
IRM Max.ReverseLeakageCurrent  
TJ = 25 °C  
mA  
VR = rated VRRM  
TJ = 150 °C  
15  
Recovery Characteristics  
Parameters  
85EPF..  
480  
Units  
ns  
Conditions  
IF @ 85Apk  
@ 25A/ µs  
trr  
Irr  
ReverseRecoveryTime  
ReverseRecoveryCurrent  
ReverseRecoveryCharge  
SnapFactor  
7.1  
A
Qrr  
S
2.1  
µC  
@25°C  
0.5  
2
85EPF.. HV QUIETIR Series  
I2153 rev. C 01/2000  
Thermal-Mechanical Specifications  
Parameters  
85EPF.. Units  
Conditions  
TJ  
Max.JunctionTemperatureRange  
-40to150  
-40to150  
0.35  
°C  
°C  
Tstg Max.StorageTemperatureRange  
RthJC Max.ThermalResistanceJunction  
toCase  
°C/W  
DCoperation  
RthJA Max.ThermalResistanceJunction  
toAmbient  
40  
°C/W  
°C/W  
g(oz.)  
RthCS TypicalThermalResistance,Caseto  
Heatsink  
0.2  
Mountingsurface,smoothandgreased  
wt  
T
ApproximateWeight  
MountingTorque  
6(0.21)  
6(5)  
Min.  
Kg-cm  
(Ibf-in)  
Max.  
12(10)  
CaseStyle  
TO-247AC  
JEDEC  
15 0  
1 5 0  
85 EP F.. S eries  
85EP F .. Se rie s  
R
(D C ) = 0.35 K /W  
R
(D C ) = 0.35 K /W  
th JC  
1 4 0  
1 3 0  
1 2 0  
1 1 0  
1 0 0  
9 0  
thJC  
14 0  
13 0  
12 0  
11 0  
10 0  
9 0  
C onduction Angle  
C ondu ction P eriod  
18 0°  
1 20°  
9 0°  
D C  
8 0  
8 0  
90°  
30°  
40  
180°  
30°  
60°  
50  
60°  
120 °  
8 0  
7 0  
7 0  
0
1 0  
20  
30  
4 0  
6 0  
70  
8 0  
9 0  
0
2 0  
60  
1 0 0  
1 2 0  
1 40  
A ve ra g e F o rw a rd C u rre n t (A )  
Ave ra g e Fo rw a rd C u rre n t (A)  
Fig.1-CurrentRatingCharacteristics  
Fig.2-CurrentRatingCharacteristics  
20 0  
18 0  
16 0  
14 0  
12 0  
10 0  
80  
16 0  
14 0  
12 0  
10 0  
8 0  
D C  
180°  
120°  
90°  
60°  
30°  
180 °  
120 °  
90 °  
60 °  
30 °  
R M S L im it  
R M S L im it  
6 0  
C ondu ction Period  
85EP F.. S erie s  
C ondu ction Angle  
8 5EP F.. S er ies  
60  
4 0  
40  
2 0  
T
= 15 0°C  
J
T
=
15 0°C  
20  
J
0
0
0
10  
20  
30  
4 0  
5 0  
6 0  
7 0  
80  
90  
0
2 0  
40  
60  
8 0  
10 0  
1 2 0  
1 40  
A ve ra g e F orw a rd C ur ren t (A )  
Av era g e Fo rw a rd C u rr en t (A )  
Fig.4-ForwardPowerLossCharacteristics  
Fig.3-ForwardPowerLossCharacteristics  
3
85EPF.. HV QUIETIR Series  
I2153 rev. C 01/2000  
1200  
1 40 0  
1 30 0  
1 20 0  
1 10 0  
1 00 0  
90 0  
M ax im u m N on R epe titive Su rg e C u rren t  
V ersu s Pu lse T ra in D u ra tio n.  
At A n y R ated Lo ad C on d itio n A n d W ith  
R ate d  
V
Ap plied Fo llow in g Su rg e.  
RRM  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
Initial T = 150°C  
In itia l T  
=
150° C  
No V o lta g e Re a p p lie d  
R a te d R ea p p lied  
J
J
@ 60 Hz 0.0083 s  
@ 50 Hz 0.0100 s  
V
RRM  
80 0  
70 0  
60 0  
50 0  
8 5EPF.. Se ries  
85E P F.. S eries  
40 0  
30 0  
0 .0 1  
1
10  
100  
0. 1  
P u lse Tra in D u ra tio n (s)  
1
Numb er O f Equ al Amplitud e Ha lf C ycle Cu rrent P ulses (N)  
Fig.5-MaximumNon-RepetitiveSurgeCurrent  
Fig.6-MaximumNon-RepetitiveSurgeCurrent  
1 00 0  
10 0  
1 0  
T
T
=
=
25° C  
J
J
15 0°C  
85 EP F.. S eries  
1
0
0 .5  
1
1 .5  
2
2 .5  
3
3 .5  
4
4.5  
In sta n ta n eo u s Fo rw a rd V o lta g e (V )  
Fig.7-ForwardVoltageDropCharacteristics  
0 .2 2  
0.2  
0. 6  
8 5EP F.. S er ie s  
I
= 125 A  
FM  
T
=
1 50° C  
J
0. 5  
80 A  
0 .1 8  
0 .1 6  
0 .1 4  
0 .1 2  
0.1  
I
= 80 A  
F M  
40 A  
0. 4  
40 A  
20 A  
0. 3  
20 A  
10 A  
10 A  
0. 2  
0 .0 8  
0 .0 6  
0 .0 4  
1 A  
0. 1  
1 A  
85E P F.. S eries  
T
=
2 5°C  
J
0
0
4 0  
80  
12 0  
1 6 0  
2 00  
0
4 0  
80  
12 0  
1 60  
2 00  
R a te O f Fa ll O f Fo rw a rd C u rr en t - d i/d t (A/µ s)  
R a te O f Fa ll O f F o rw a rd C urre n t - d i/d t (A/µ s)  
Fig.8-RecoveryTimeCharacteristics,TJ =25°C  
Fig.9-RecoveryTimeCharacteristics,TJ=150°C  
4
85EPF.. HV QUIETIR Series  
I2153 rev. C 01/2000  
4
3.5  
3
1 4  
85E PF .. Se rie s  
I
= 125 A  
FM  
85 EP F.. S eries  
I
= 80 A  
FM  
T
=
2 5°C  
T
=
15 0° C  
J
1 2  
1 0  
8
J
80 A  
40 A  
20 A  
2.5  
2
40 A  
6
20 A  
10 A  
1.5  
1
10 A  
1 A  
4
2
0.5  
0
1 A  
0
0
40  
8 0  
12 0  
16 0  
20 0  
0
40  
8 0  
1 2 0  
1 60  
2 00  
R a te O f Fa ll O f F or w a r d C u rren t - d i/d t (A/µ s)  
R a te O f F a ll O f F orw a rd C u rren t - d i/d t (A/µ s)  
Fig.10-RecoveryChargeCharacteristics,TJ=25°C  
Fig.11-RecoveryChargeCharacteristics,TJ=150°C  
2 2  
4 5  
I
= 125 A  
I
= 80 A  
FM  
FM  
85EP F .. Se rie s  
85EP F .. Se ries  
2 0  
1 8  
1 6  
1 4  
1 2  
1 0  
8
4 0  
3 5  
3 0  
2 5  
2 0  
1 5  
1 0  
5
T
=
25° C  
T
=
150 °C  
J
J
80 A  
40 A  
40 A  
20 A  
20 A  
10 A  
10 A  
6
1 A  
4
1 A  
2
0
0
0
4 0  
80  
12 0  
1 60  
2 00  
0
4 0  
80  
12 0  
1 6 0  
20 0  
R a te O f Fa ll O f F o rw a rd C u rre n t - d i/dt (A/µ s)  
R a te O f Fa ll O f F o rw a rd C u rre n t - d i/d t (A/µ s)  
Fig.12-RecoveryCurrentCharacteristics,TJ=25°C  
Fig.13-RecoveryCurrentCharacteristics,TJ=150°C  
1
Stea d y Sta te V a lu e  
(D C O p e ra tio n )  
D
D
D
=
=
=
0.50  
0.33  
0.25  
0.1  
D
D
=
=
0.17  
0.08  
S in g le P u lse  
8 5EPF .. Se ries  
0 .01  
0 .0 00 1  
0.0 01  
0 .01  
0 .1  
1
1 0  
Sq u a re W ave P u lse D u ra tion (s)  
Fig.14-ThermalImpedanceZthJCCharacteristics  
5
85EPF.. HV QUIETIR Series  
I2153 rev. C 01/2000  
Outline Table  
Case Style PowIRtabTM  
Dimensions in millimeters and (inches)  
Case Style PowIRtabTM "J"version  
Dimensions in millimeters and (inches)  
6
85EPF.. HV QUIETIR Series  
I2153 rev. C 01/2000  
Ordering Information Table  
DeviceCode  
85  
E
P
F
12  
J
BaseCathode  
2
5
6
1
2
3
4
1
2
-
-
CurrentRating  
CircuitConfiguration:  
E = Single Diode  
Package:  
Anode  
Anode  
1
3
3
4
-
-
P = TO-247AC  
Type of Silicon:  
F = Fast Recovery  
08 = 800V  
10 = 1000V  
12 = 1200V  
5
-
-
Voltage code: Code x 100 = V  
none=PowIRtabTM standard  
(*)  
RRM  
6
65  
J
= ShortLeadVersion6  
(*) for higher voltage up to 1600V contact factory  
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.  
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408.  
IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801.  
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933.  
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220.  
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086.  
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630.  
IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936.  
http://www.irf.com  
Fax-On-Demand: +44 1883 733420  
Data and specifications subject to change without notice.  
7

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