8TQ080GPBF [INFINEON]
SCHOTTKY RECTIFIER; 肖特基整流器器
| 型号： | 8TQ080GPBF |
| 厂家： | 
Infineon |
| 描述： | SCHOTTKY RECTIFIER |
| 文件： | 总7页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin PD-20686 rev. A 01/06
8TQ...G
8 Amp
SCHOTTKY RECTIFIER
IF(AV) = 8 Amp
VR = 80 - 100V
Major Ratings and Characteristics
Description/ Features
The 8TQ...G Schottky rectifier series has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175° C
junction temperature. Typical applications are in switching
power supplies, converters, free-wheeling diodes, and re-
verse battery protection.
Characteristics
Value
Units
I
Rectangular
waveform
8
A
F(AV)
V
I
range
80 -100
850
V
A
V
RRM
175° C T operation
J
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
@tp=5µssine
FSM
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
V
@8Apk, T =125°C
J
0.58
F
J
T
range
-55to175
°C
Case Styles
8TQ...G
Base
Cathode
1
3
Cathode
Anode
TO-220AC
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1
8TQ...G Series
Final PD-20686 rev. A 01/06
Voltage Ratings
Part number
8TQ080G
8TQ100G
VR
Max. DC Reverse Voltage (V)
80
100
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
8TQ Units
Conditions
IF(AV) Max. Average Forward Current
*SeeFig.5
8
A
50%dutycycle@TC =157°C,rectangularwaveform
Following any rated
load condition and
IFSM Max. PeakOneCycleNon-Repetitive
SurgeCurrent *SeeFig.7
EAS Non-Repetitive Avalanche Energy
850
230
7.50
0.50
5µs Sineor3µsRect.pulse
A
10msSineor6msRect. pulse with rated VRRM applied
TJ =25°C, IAS= 0.50Amps,L= 60mH
mJ
A
IAR
Repetitive Avalanche Current
Currentdecayinglinearlytozeroin1µsec
FrequencylimitedbyTJ max.VA =1.5xVR typical
Electrical Specifications
Parameters
8TQ Units
Conditions
VFM Max. Forward Voltage Drop
* See Fig. 1
(1)
0.72
0.88
0.58
0.69
0.28
7
500
8
10000
V
V
V
@
8A
@ 16A
8A
TJ = 25 °C
@
@ 16A
TJ = 125 °C
V
IRM Max. Reverse Leakage Current (1)
* See Fig. 2
mA
mA
pF
nH
V/ µs
TJ = 25 °C
TJ = 125 °C
VR = rated VR
CT
LS
Max. Junction Capacitance
Typical Series Inductance
VR = 5VDC (test signal range 100Khz to 1Mhz) 25 °C
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
(Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters
8TQ Units
Conditions
TJ
Max. Junction Temperature Range -55to175 °C
Tstg Max. Storage Temperature Range
-55to175 °C
RthJC Max. Thermal Resistance Junction
toCase
2.0
°C/W DC operation *SeeFig.4
RthCS TypicalThermalResistance, Caseto
Heatsink
0.50
°C/W Mountingsurface, smoothandgreased
wt
T
Approximate Weight
Mounting Torque
2(0.07) g(oz.)
Min.
Max.
6(5)
Kg-cm
(Ibf-in)
12(10)
Device Marking
8TQ...G
2
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8TQ...G Series
Final PD-20686 rev. A 01/06
100
10
1000
100
10
T = 175°C
J
150°C
125°C
1
100°C
75°C
50°C
0.1
0.01
0.001
0.0001
25°C
0
20
40
60
80
100
Reverse Voltage - V (V)
T = 175°C
J
R
Fig.2-Typical Values of Reverse Current
Vs. Reverse Voltage
T = 125°C
J
T = 25°C
J
1000
T = 25°C
J
1
0.1
100
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
2.2
0
10 20 30 40 50 60 70 80 90 100110
Forward Voltage Drop - V
(V)
Reverse Voltage - V (V)
FM
R
Fig. 1-Maximum Forward Voltage Drop Characteristics
Fig.3-Typical Junction Capacitance
Vs. Reverse Voltage
10
D = 0.75
D = 0.50
D = 0.33
1
D = 0.25
D = 0.20
Single Pulse
(Thermal Resistance)
0.1
1E-04
1E-03
1E-02
1E-01
1E+00
t1,RectangularPulseDuration(Seconds)
Fig.4-Maximum Thermal Impedance ZthJC Characteristics
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3
8TQ...G Series
Final PD-20686 rev. A 01/06
180
175
170
165
7
6
5
4
3
2
1
0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
160
RMS Lim it
DC
Square wave (D = 0.50)
155
150
145
140
80%Rated V applied
R
see note (2)
0
2
4
6
8
10
12
0
2
4
6
8
10
12
(A)
Average Forward Current - I
(A)
Average Forward Current - I
F( AV)
F(AV)
Fig. 5-Maximum Allowable Case Temperature
Fig.6-Forward Power Loss Characteristics
Vs. Average Forward Current
1000
At Any Rated Load Condition
And With Rated V
Following Surge
Applied
RRM
100
10
100
1000
10000
Square Wave Pulse Duration - t (microsec)
p
Fig. 7-Maximum Non-Repetitive Surge Current
L
HIG H-SPEED
SW ITC H
IRFP460
DUT
FREE-WHEEL
DIODE
Rg = 25 ohm
Vd = 25 Volt
+
C URRENT
MONITOR
40HFL40S02
Fig.8-Unclamped Inductive Test Circuit
(2) Formulaused:TC=TJ -(Pd+PdREV)xRthJC
;
Pd=ForwardPowerLoss=IF(AV) xVFM @(IF(AV) /D) (seeFig.6);
PdREV =InversePowerLoss=VR1 xIR(1-D); IR @VR1=80%ratedVR
4
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8TQ...G Series
Final PD-20686 rev. A 01/06
Outline Table
Conform to JEDEC outline TO-220AB
Dimensions in millimeters and (inches)
Part Marking Information
PART NUMBER
G = Schottky Generation
INTERNATIONAL
RECTIFIER
LOGO
EXAMPLE: THIS IS A 8TQ100G
LOT CODE 1789
DATE CODE
ASSEMBLED ON WW 19, 2001
IN THE ASSEMBLY LINE "C"
YEAR 1 = 2001
WEEK 19
ASSEMBLY
LOT CODE
LINE C
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5
8TQ...G Series
Final PD-20686 rev. A 01/06
Ordering Information Table
Device Code
8
T
Q
100
G
-
5
6
1
2
4
3
1
2
3
4
5
6
-
-
-
-
-
-
Current Rating (8 = 8A)
T
= TO-220
Q
= Schottky Q Series
080 = 80V
100 =100V
Voltage Ratings
= Schottky Generation
G
y none = Standard Production
y PbF = Lead-Free
Tube Standard Pack Quantity : 50 pieces
8TQ100
********************************************
*
*
*
*
This model has been developed by
Wizard SPICE MODEL GENERATOR (1999)
(International Rectifier Corporation)
Contain Proprietary Information
*
*
*
*
********************************************
*
*
SPICE Model Diode is composed by
simple diode plus paralled VCG2T
a
*
*
********************************************
.SUBCKT 8TQ100 ANO CAT
D1 ANO
1 DMOD (0.07089)
*Define diode model
.MODEL DMOD D(IS=1.15938021883115E-03A,N=1.95244918720315,BV=120V,
+
+
IBV=5.37891460505463A,RS= 0.00127602,CJO=9.9895753025115E-09,
VJ=2.30070034831946,XTI=2, EG=0.758916909331649)
********************************************
*Implementation of VCG2T
VX
R1
1
2
2
DC 0V
CAT TRES 1E-6
.MODEL TRES RES(R=1,TC1=-90.2420977904848)
GP1 ANO CAT VALUE={-ABS(I(VX))*(EXP((((1.635248E-02/-90.2421)*((V(2,CAT)*1E6)/(I(VX)+1E-6)-1))+1)*4.011038E-
03*ABS(V(ANO,CAT)))-1)}
********************************************
.ENDS 8TQ100
Thermal Model Subcircuit
.SUBCKT 8TQ100
5 1
CTHERM1
CTHERM2
CTHERM3
CTHERM4
5
4
3
2
4
3
2
1
1.45E+00
4.54E+00
1.09E+01
1.01E+02
RTHERM1
RTHERM2
RTHERM1
RTHERM1
5
4
3
2
4
3
2
1
2.49E+00
5.20E-04
5.43E-01
3.05E-02
.ENDS 8TQ100
6
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8TQ...G Series
Final PD-20686 rev. A 01/06
Data and specifications subject to change without notice.
This product has been designed and quaified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 01/06
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7
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