9AF40NPBF [INFINEON]

Rectifier Diode, 1 Phase, 1 Element, 50A, 400V V(RRM), Silicon,;


型号：	9AF40NPBF
厂家：	Infineon
描述：	Rectifier Diode, 1 Phase, 1 Element, 50A, 400V V(RRM), Silicon, 二极管
文件：	总4页 (文件大小：128K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Preliminary Data Sheet I20263 rev. D 09/99

9AF.. SERIES

PRESSFIT STANDARD RECOVERY DIODES

Features

Voltage Rating up to 600 V

High Surge Current Capability

Simplified design and rapid assembly

Terminals suitable for

Crimping

50 A

Clamping

Welding

Soldering

Description

These 9AF series devices are standard recovery power rectifier diodes. Mechanical design are greatly

simplified giving advantages to application.

Applications, include welders, battery chargers and general industrial current rectification.

Major Ratings and Characteristics

Parameters

Values

Units

I _F(AV)

@T_C

I_F(RMS)

150

°C

I_FSM

@50Hz

850

@60Hz

@50Hz

@60Hz

900

A s

I t

3977

A s

3631

I √t

39775

400/600

-55to175

A √s

V_RRM

T_J

^oC

Mounting - PRESSFIT

Use standard aluminium heatsink of minimum thickness 3 +/- 0.1 mm to obtain specified performance

Drill a hole of diameter 12.65 + 0,03 mm (0,498 to 0,499 inch) in the heatsink

Remove the burrs and sharp edges around the hole diameter

Ensure that axis of the diodes are aligned with axis of the hole

The diodes are designed for press fitted mounting from the rear side of the aluminium heatsink

as indicated in the lay out figure

The pressing force must be 1000 Kgs +/- 10% per diode.

Mounting - with SOLDER

Base to Heatsink

Lead Terminal to Tag, Lug or wire

Suggested Soldering Conditions :

Equipment : Hot Plate, Solder Iron & Reflow Furnace

Solder :

Composition Pb/Sn EUTECTIK

Solder Paste with Flux type - RMA or RA or RSA

SolderPreform

Solder Wire

Temperature: 230°C Max.

Duration :

Time limit max 5 minute from 190°C to 230°C to 190°C

Atmosphere : Air

9AF.. Series

Preliminary Data Sheet I20263 rev. C 07/99

ELECTRICALSPECIFICATIONS

Voltage Ratings

V_RRM, maximum repetitive

V_RSM, maximum non-

I_RRMmax.

Typenumber

peak reverse voltage

repetitive peak rev. voltage

@ T_J= T_Jmax

9AF40

9AF60

400

600

500

700

Forward Conduction

Parameter

9AF

Units Conditions

I_F(AV)

Max. average forward current

@ Case temperature

°C

180° conduction, half sine wave

150

I_F(RMS)Max. peak repetitive forward current

@ Case temperature

150

°C

I_FSM

Max. peak, one-cycle forward,

non-repetitive surge current

850

t = 10ms No voltage

t = 8.3ms reapplied

t = 10ms 100% V_RRM

900

750

785

t = 8.3ms reapplied

Sinusoidal half wave,

I²t

Maximum I²t for fusing

3977

3631

2813

2568

39775

A²s t = 10ms No voltage Initial T_J= T_Jmax.

t = 8.3ms reapplied

t = 10ms 100% V_RRM

t = 8.3ms reapplied

I²√t

Maximum I²√t for fusing

A²√s t = 0.1 to 10ms, no voltage reapplied

V_F(TO)1Low level value of threshold voltage

V_F(TO)2High level value of threshold voltage

0.72

0.84

3.29

mΩ

T_J= 175°

Low level value of forward slope resistance

High level value of forward slope resistance

Maximum forward voltage drop

2.67

1.33

V_FM

T_J= 25°C, I = 157 A

Thermal and Mechanical Specifications

Parameter

9AF

Units Conditions

T_J

Max. junction operating temperature range

Storage temperature range

- 55 to 175

°C

stg

R_thJCMax. thermal resistance, junction to case

R_thCSMax. thermal resistance, case to heatsink

0.30

0.14

K/W DC operation

As per mounting details

Approximate weight

9AF.. Series

Preliminary Data Sheet I20263 rev. C 07/99

Ordering Information Table

DeviceCode

9AF 60

Essential part number

Voltage code: Code x 10 = V_RRM(See Voltage Ratings Table)

N = Normal Polarity (cathode to case)

R = Reverse Polarity (anode to case)

180

170

160

150

140

130

180

(DC ) = 0.30 K/ W

Co n d uc tion Ang le

(DC ) = 0.30 K/ W

C o nd u ctio n Pe rio d

thJC

170

160

150

140

130

60°

90°

120°

60°

120°

30°

180°

10 20 30 40 50 60 70 80 90

Ave ra g e Forwa rd C urre n t (A)

Ave ra g e Forwa rd C urre nt (A)

Fig. 1 - Current Ratings Characteristics

Fig. 2 - Current Ratings Characteristics

180°

120°

90°

60°

30°

180°

120°

90°

60°

30°

RMS Limit

RMS Lim it

Co nduc tio n Pe riod

Co n d uc tio n Ang le

= 175°C

10 20 30 40 50 60 70 80 90

Ave ra g e Forwa rd C urre nt (A)

Fig. 3 - Forward Power Loss Characteristics

Fig. 4 - Forward Power Loss Characteristics

9AF.. Series

Preliminary Data Sheet I20263 rev. C 07/99

900

800

700

600

500

400

300

200

800

At An y Ra te d Lo a d C o nd itio n An d With

750

Ma ximum Non Re pe titive Surg e Curre nt

Ve rsus Pulse Tra in Dura tio n.

Ra te d V

Ap p lie d Fo llo wing Surg e .

RRM

Initia l T = 175°C

700

650

600

550

500

450

400

350

300

250

200

Initia l T = 175°C

No Volta ge Re a pp lie d

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

Ra te d V

Re a p p lie d

RRM

100

0.01

0.1

Pulse Tra in Dura tio n (s)

Numb e r O f Equa l Amp litud e Ha lf Cyc le Curre nt Pulse s (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

Fig. 6 - Maximum Non-Repetitive Surge Current

1000

Ste a dy Sta te Va lue

= 0.30 K/W

thJC

(DC Op e ra tion)

100

T = 25°C

T = 175°C

0.1

0.01

0.1

0.5

1.5

2.5

3.5

Sq ua re Wa ve Pulse Dura tion (s)

In sta n ta n e o us Forw a rd Volta g e (V)

Fig. 8 - Thermal Impedance Z_thJCCharacteristic

Fig. 7 - Forward Voltage Drop Characteristics

WORLDHEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.

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IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086.

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630.

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http://www.irf.com

Fax-On-Demand: +44 1883 733420

Data and specifications subject to change without notice.

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