A25F120MPBF [INFINEON]

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 25A, 1200V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN;


型号：	A25F120MPBF
厂家：	Infineon
描述：	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 25A, 1200V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN 局域网二极管
文件：	总6页 (文件大小：421K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Bulletin I2018 rev. C 01/05

25F(R) SERIES

STANDARD RECOVERY DIODES

Stud Version

Features

High surge current capability

Avalanche types available

Stud cathode and stud anode version

Wide current range

25 A

Types up to 1200V V_RRM

Typical Applications

Battery charges

Converters

Power supplies

Machine tool controls

Major Ratings and Characteristics

Parameters

25F(R)

Units

I_F(AV)

@ T_C

120

°C

I_F(RMS)

I_FSM

@50Hz

@ 60Hz

@50Hz

@ 60Hz

range

356

373

I²t

636

A²s

580

V_RRM

T_J

100 to 1200

- 65 to 175

case style

DO-203AA (DO-4)

range

°C

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25F(R) Series

Bulletin I2018 rev. C 01/05

ELECTRICALSPECIFICATIONS

Voltage Ratings

Voltage

Code

V_RRM, maximum

V_RSM, maximum non-

V_R(BR), minimum

I_RRMmax.

@ T_J= 175°C

Type number

repetitive peak

reverse voltage

repetitive peak

reverse voltage

avalanche

voltage

(1)

100

200

150

275

100

120

400

600

800

1000

1200

500

725

950

1200

1400

500

750

950

1150

1350

25F(R)

(1) Avalanche version only available from V_RRM400V to 1200V.

Forward Conduction

Parameter

25F(R)

Units Conditions

I_F(AV)Max. average forward current

@ Case temperature

I_F(RMS)Max. RMS forward current

120

°C

180° conduction, half sine wave

P_R

Maximum non-repetitive

peak reverse power

K/W 10µs square pulse, T_J= T_Jmax.

see note (2)

I_FSM

Max. peak, one-cycle forward,

356

373

300

314

636

580

450

410

6360

t = 10ms

t = 8.3ms

t = 10ms

t = 8.3ms

t = 10ms

t = 8.3ms

t = 10ms

t = 8.3ms

No voltage

reapplied

non-repetitive surge current

100% V_RRM

reapplied

Sinusoidal half wave,

I²t

Maximum I²t for fusing

No voltage

reapplied

Initial T = T_Jmax.

A²s

100% V_RRM

reapplied

I²√t

Maximum I²√t for fusing

A²√s t = 0.1 to 10ms, no voltage reapplied

V_F(TO)1Low level value of threshold

0.80

0.90

6.80

(16.7% x π x I_F(AV)< I < π x I_F(AV)), T_J= T_Jmax.

voltage

V_F(TO)2High level value of threshold

voltage

(I > π x I_F(AV)), T_J= T_Jmax.

r ₁

Low level value of forward

slope resistance

(16.7% x π x I_F(AV)< I < π x I_F(AV)), T_J= T_Jmax.

mΩ

r ₂

High level value of forward

slope resistance

5.70

1.30

(I > π x I_F(AV)), T_J= T_Jmax.

V_FM

Max. forward voltage drop

I = 78A, T_J= 25°C, t = 400µs rectangular wave

pk p

(2) Available only for Avalanche version, all other parameters the same as 25F.

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25F(R) Series

Bulletin I2018 rev. C 01/05

Thermal and Mechanical Specifications

Parameter

25F(R)

Units Conditions

T_J

Max.junctionoperatingtemperaturerange

Max.storagetemperaturerange

-65 to 175

-65 to 200

°C

stg

R_thJCMax.thermalresistance,junctiontocase

1.5

DCoperation

K/W

R_thCSMax. thermal resistance, case

to heatsink

Mountingsurface,smooth,flatand

greased

Not lubricated threads

0.5

Allowable mounting torque

1.5 ^+0-10%

1.2 ^+0-10%

lbf.in

Lubricated threads

lbf.in

g (oz)

Approximate weight

Casestyle

7 (0.25)

DO-203AA(DO-4)

SeeOutlineTable

∆R_thJCConduction

(The following table shows the increment of thermal resistence R_thJCwhen devices operate at different conduction angles than DC)

Conduction angle Sinusoidal conduction Rectangular conduction Units

Conditions

T_J= T_Jmax.

180°

120°

90°

0.28

0.39

0.50

0.73

1.20

0.24

0.41

0.54

0.75

1.21

K/W

60°

30°

Ordering Information Table

Device Code

120

= Avalanche diode

None = Standard diode

Current rating: Code = I_F(AV)

= Standard device

None = Stud Normal Polarity (Cathode to Stud)

= Stud Reverse Polarity (Anode to Stud)

Voltage code: Code x 10 = V_RRM(See Voltage Ratings table)

None = Stud base DO-203AA (DO-4) 10-32UNF-2A

= Stud base DO-203AA (DO-4) M5 X 0.8 - (Not available for Avalanche diodes)

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25F(R) Series

Bulletin I2018 rev. C 01/05

Outlines Table

Case Style DO-203AA (DO-4)

All dimensions in millimeters (inches)

180

25F(R) Series

thJC

25F(R) Series

thJC

(DC) = 1.5 K/W

170

160

150

140

130

120

110

100

170

160

150

140

130

120

110

100

Conduction Period

Conduction Angle

90°

60°

120°

180°

60° 120°

30°

180°

30°

10 15 20 25 30 35 40 45

Average Forward Current (A)

Fig. 1 - Current Ratings Characteristics

Fig. 2 - Current Ratings Characteristics

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25F(R) Series

Bulletin I2018 rev. C 01/05

180°

120°

90°

60°

30°

RMS Limit

Conduction Angle

25F(R) Series

T = 175°C

300 25 50 75 100 125 150 175

Maximum Allowable Ambient Temperature (°C)

Average Forward Current (A)

Fig.3-ForwardPowerLossCharacteristics

180°

120°

90°

60°

30°

RMS Limit

Conduction Period

25F(R) Series

T = 175°C

10 15 20 25 30 35 400 25 50 75 100 125 150 175

Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)

Fig.4-ForwardPowerLossCharacteristics

350

300

250

200

150

100

400

350

300

250

200

150

100

At Any Rated Load Condition And With

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration.

Rated V

RRM

Applied Following Surge.

Initial T = 175°C

No Voltage Reapplied

@60 Hz 0.0083 s

@50 Hz 0.0100 s

Rated V

Reapplied

RRM

25F(R) Series

0.1

100

0.01

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Pulse Train Duration (s)

Fig.5-MaximumNon-RepetitiveSurgeCurrent

Fig.6-MaximumNon-RepetitiveSurgeCurrent

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25F(R) Series

Bulletin I2018 rev. C 01/05

1000

100

Steady State Value

= 1.5 K/W

thJC

(DC Operation)

T = 25°C

T = 175°C

25F(R) Series

0.1

0.001

0.01

0.1

0.5

1.5

2.5

3.5

Instantaneous Forward Voltage (V)

Square Wave Pulse Duration (s)

Fig.7-ForwardVoltageDropCharacteristics

Fig.8-Thermal ImpedanceZ_thJCCharacteristics

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