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AIGB40N65F5 [INFINEON]

Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/AC.;
AIGB40N65F5
型号： AIGB40N65F5
厂家： Infineon    Infineon
描述：

Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/AC.

功率因数校正
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AIGB40N65F5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
HighꢀspeedꢀFASTꢀIGBTꢀinꢀTRENCHSTOPTMꢀ5ꢀtechnology  
ꢀ
C
E
FeaturesꢀandꢀBenefits:  
ꢀꢀꢀHighꢀspeedꢀF5ꢀtechnologyꢀoffering:  
•ꢀꢀBest-in-Classꢀefficiencyꢀinꢀhardꢀswitchingꢀandꢀresonant  
ꢀꢀꢀtopologies  
•ꢀꢀ650Vꢀbreakdownꢀvoltage  
•ꢀꢀLowꢀgateꢀchargeꢀQG  
G
•ꢀꢀMaximumꢀjunctionꢀtemperatureꢀ175°C  
•ꢀꢀDynamicallyꢀstressꢀtested  
•ꢀꢀQualifiedꢀaccordingꢀtoꢀAEC-Q101  
•ꢀꢀGreenꢀpackageꢀ(RoHSꢀcompliant)  
•ꢀꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:  
ꢀꢀꢀhttp://www.infineon.com/igbt/  
C
Applications:  
•ꢀꢀOff-boardꢀcharger  
•ꢀꢀOn-boardꢀcharger  
•ꢀꢀDC/DCꢀconverter  
•ꢀꢀPower-factorꢀcorrection  
G
E
Packageꢀpinꢀdefinition:  
•ꢀꢀPinꢀ1ꢀ-ꢀgate  
•ꢀꢀPinꢀ2ꢀ&ꢀbacksideꢀ-ꢀcollector  
•ꢀꢀPinꢀ3ꢀ-ꢀemitter  
KeyꢀPerformanceꢀandꢀPackageꢀParameters  
Type  
VCE  
IC  
VCEsat,ꢀTvj=25°C Tvjmax  
1.6V 175°C  
Marking  
Package  
AIGB40N65F5  
650V  
40A  
AG40EF5  
PG-TO263-3  
Datasheet  
www.infineon.com  
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument  
Vꢀ2.2  
2019-10-18  
AIGB40N65F5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11  
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14  
Datasheet  
2
Vꢀ2.2  
2019-10-18  
AIGB40N65F5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
MaximumꢀRatings  
Parameter  
Symbol  
Value  
Unit  
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C  
VCE  
650  
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax  
Tcꢀ=ꢀ25°C  
Tcꢀ=ꢀ100°C  
IC  
74.0  
46.0  
A
1)  
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax  
ICpuls  
120.0  
120.0  
A
A
Turn off safe operating area  
-
VCEꢀ≤ꢀ650V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs1)  
Gate-emitter voltage  
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)  
±20  
±30  
VGE  
Ptot  
V
PowerꢀdissipationꢀTcꢀ=ꢀ25°C  
PowerꢀdissipationꢀTcꢀ=ꢀ100°C  
250.0  
125.0  
W
Operating junction temperature  
Storage temperature  
Tvj  
-40...+175  
-55...+150  
°C  
°C  
Tstg  
Soldering temperature,  
reflow soldering (MSL1 according to JEDEC J-STA-020)  
°C  
260  
ThermalꢀResistance  
Value  
min. typ. max.  
Parameter  
Symbol Conditions  
Unit  
RthꢀCharacteristics  
IGBT thermal resistance,  
junction - case  
Rth(j-c)  
Rth(j-a)  
-
-
-
-
0.60 K/W  
65 K/W  
Thermal resistance, min. footprint  
junction - ambient  
Thermal resistance, 6cm² Cu on  
PCB  
Rth(j-a)  
-
-
40 K/W  
junction - ambient  
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
StaticꢀCharacteristic  
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.20mA  
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ40.0A  
Tvjꢀ=ꢀ25°C  
Collector-emitter saturation voltage VCEsat  
Tvjꢀ=ꢀ125°C  
650  
-
-
V
V
-
-
-
1.60 2.10  
1.80  
1.90  
-
-
Tvjꢀ=ꢀ175°C  
Gate-emitter threshold voltage  
VGE(th)  
ICꢀ=ꢀ0.40mA,ꢀVCEꢀ=ꢀVGE  
3.2  
4.0  
4.8  
V
VCEꢀ=ꢀ650V,ꢀVGEꢀ=ꢀ0V  
Tvjꢀ=ꢀ25°C  
Tvjꢀ=ꢀ175°C  
Zero gate voltage collector current ICES  
-
-
-
40  
-
µA  
1000  
Gate-emitter leakage current  
Transconductance  
IGES  
gfs  
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V  
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ40.0A  
-
-
-
100  
-
nA  
S
40.0  
1) Defined by design. Not subject to production test.  
Datasheet  
3
Vꢀ2.2  
2019-10-18  
AIGB40N65F5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
DynamicꢀCharacteristic  
Input capacitance  
Cies  
-
-
-
2500  
50  
-
-
-
Output capacitance  
Coes  
Cres  
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz  
pF  
Reverse transfer capacitance  
9
VCCꢀ=ꢀ520V,ꢀICꢀ=ꢀ40.0A,  
VGEꢀ=ꢀ15V  
Gate charge  
QG  
LE  
-
-
90.0  
7.0  
-
-
nC  
nH  
Internal emitter inductance  
measured 5mm (0.197 in.) from  
case  
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
22  
13  
-
-
-
-
-
-
-
ns  
ns  
Tvjꢀ=ꢀ25°C,  
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ20.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
RG(on)ꢀ=ꢀ15.0Ω,ꢀRG(off)ꢀ=ꢀ15.0Ω,  
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Energy losses include “tail” and  
diode reverse recovery.  
Turn-off delay time  
Fall time  
166  
6
ns  
ns  
Turn-on energy  
Eon  
Eoff  
Ets  
0.39  
0.11  
0.50  
mJ  
mJ  
mJ  
Turn-off energy  
Total switching energy  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
21  
5
-
-
-
-
-
-
-
ns  
ns  
Tvjꢀ=ꢀ25°C,  
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ5.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
RG(on)ꢀ=ꢀ15.0Ω,ꢀRG(off)ꢀ=ꢀ15.0Ω,  
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Energy losses include “tail” and  
diode reverse recovery.  
Turn-off delay time  
Fall time  
183  
11  
ns  
ns  
Turn-on energy  
Turn-off energy  
Total switching energy  
Eon  
Eoff  
Ets  
0.09  
0.04  
0.13  
mJ  
mJ  
mJ  
Datasheet  
4
Vꢀ2.2  
2019-10-18  
AIGB40N65F5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
21  
15  
-
-
-
-
-
-
-
ns  
ns  
Tvjꢀ=ꢀ150°C,  
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ20.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
RG(on)ꢀ=ꢀ15.0Ω,ꢀRG(off)ꢀ=ꢀ15.0Ω,  
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Energy losses include “tail” and  
diode reverse recovery.  
Turn-off delay time  
Fall time  
203  
4
ns  
ns  
Turn-on energy  
Eon  
Eoff  
Ets  
0.53  
0.21  
0.74  
mJ  
mJ  
mJ  
Turn-off energy  
Total switching energy  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
19  
6
-
-
-
-
-
-
-
ns  
ns  
Tvjꢀ=ꢀ150°C,  
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ5.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
RG(on)ꢀ=ꢀ15.0Ω,ꢀRG(off)ꢀ=ꢀ15.0Ω,  
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Energy losses include “tail” and  
diode reverse recovery.  
Turn-off delay time  
Fall time  
243  
20  
ns  
ns  
Turn-on energy  
Turn-off energy  
Total switching energy  
Eon  
Eoff  
Ets  
0.16  
0.08  
0.24  
mJ  
mJ  
mJ  
Datasheet  
5
Vꢀ2.2  
2019-10-18  
AIGB40N65F5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
300  
250  
200  
150  
100  
50  
80  
70  
60  
50  
40  
30  
20  
10  
0
0
25  
50  
75  
100  
125  
150  
175  
25  
50  
75  
100  
125  
150  
175  
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]  
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]  
Figure 1. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase  
Figure 2. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase  
temperature  
temperature  
(Tvj≤175°C)  
(VGE≥15V,ꢀTvj≤175°C)  
120  
120  
VGE = 20V  
VGE = 20V  
18V  
18V  
100  
100  
15V  
15V  
12V  
12V  
10V  
10V  
80  
80  
8V  
7V  
8V  
7V  
60  
60  
6V  
6V  
5V  
5V  
40  
40  
20  
0
20  
0
0
1
2
3
4
5
0
1
2
3
4
5
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 3. Typicalꢀoutputꢀcharacteristic  
(Tvj=25°C)  
Figure 4. Typicalꢀoutputꢀcharacteristic  
(Tvj=150°C)  
Datasheet  
6
Vꢀ2.2  
2019-10-18  
AIGB40N65F5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
120  
2.50  
2.25  
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
Tvj = 25°C  
Tvj = 150°C  
IC = 10A  
IC = 20A  
IC = 40A  
100  
80  
60  
40  
20  
0
4
5
6
7
8
9
10  
0
25  
50  
75  
100  
125  
150  
175  
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 5. Typicalꢀtransferꢀcharacteristic  
(VCE=20V)  
Figure 6. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas  
aꢀfunctionꢀofꢀjunctionꢀtemperature  
(VGE=15V)  
1000  
1000  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
100  
10  
1
100  
10  
1
0
20  
40  
60  
80  
100  
120  
5
15  
25  
35  
45  
55  
65  
75  
85  
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]  
rG,ꢀGATEꢀRESISTORꢀ[Ω]  
Figure 7. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  
collectorꢀcurrent  
Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate  
resistor  
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,  
VGE=15/0V,ꢀrG=15Ω,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,  
VGE=15/0V,ꢀIC=20A,Dynamicꢀtestꢀcircuitꢀin  
Figure E)  
Datasheet  
7
Vꢀ2.2  
2019-10-18  
AIGB40N65F5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
1000  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
typ.  
min.  
max.  
td(off)  
tf  
td(on)  
tr  
100  
10  
1
25  
50  
75  
100  
125  
150  
175  
25  
50  
75  
100  
125  
150  
175  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  
junctionꢀtemperature  
Figure 10. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction  
ofꢀjunctionꢀtemperature  
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=15/0V,  
(IC=0.4mA)  
IC=20A,ꢀrG=15Ω,DynamicꢀtestꢀcircuitꢀinꢀFigure  
E)  
15  
12  
9
2.0  
Eoff  
Eon  
Ets  
Eoff  
Eon  
Ets  
1.6  
1.2  
0.8  
0.4  
0.0  
6
3
0
0
20  
40  
60  
80  
100  
120  
5
15  
25  
35  
45  
55  
65  
75  
85  
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]  
rG,ꢀGATEꢀRESISTORꢀ[Ω]  
Figure 11. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀcollectorꢀcurrent  
Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀgateꢀresistor  
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,  
VGE=15/0V,ꢀrG=15Ω,Dynamicꢀtestꢀcircuitꢀin  
Figure E)  
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,  
VGE=15/0V,ꢀIC=20A,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
Datasheet  
8
Vꢀ2.2  
2019-10-18  
AIGB40N65F5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
1.2  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
Eoff  
Eon  
Ets  
Eoff  
Eon  
Ets  
0.9  
0.6  
0.3  
0.0  
25  
50  
75  
100  
125  
150  
175  
200  
250  
300  
350  
400  
450  
500  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀjunctionꢀtemperature  
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=15/0V,  
IC=20A,ꢀrG=15Ω,Dynamicꢀtestꢀcircuitꢀin  
Figure E)  
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀcollectorꢀemitterꢀvoltage  
(inductiveꢀload,ꢀTvj=150°C,ꢀVGE=15/0V,  
IC=20A,ꢀrG=15Ω,Dynamicꢀtestꢀcircuitꢀin  
Figure E)  
16  
VCCꢀ=ꢀ130V  
VCCꢀ=ꢀ520V  
Cies  
Co(er)  
Coes  
Cres  
1E+4  
1000  
100  
10  
14  
12  
10  
8
6
4
2
0
1
0
20  
40  
60  
80  
100  
0
50  
100 150 200 250 300 350 400  
QGE,ꢀGATEꢀCHARGEꢀ[nC]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 15. Typicalꢀgateꢀcharge  
(IC=40A)  
Figure 16. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof  
collector-emitterꢀvoltage  
(VGE=0V,ꢀf=1MHz)  
Datasheet  
9
Vꢀ2.2  
2019-10-18  
AIGB40N65F5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
1
D = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
0.01  
single pulse  
0.01  
i:  
1
2
3
4
5
6
ri[K/W]: 5.5E-3 0.142332 0.228875 0.212006 0.017599 2.1E-3  
τi[s]:  
1.3E-5 2.7E-4  
1.8E-3  
8.8E-3  
0.13885 2.05094  
0.001  
1E-6  
1E-5  
1E-4  
0.001  
0.01  
0.1  
1
tp,ꢀPULSEꢀWIDTHꢀ[s]  
Figure 17. IGBTꢀtransientꢀthermalꢀimpedance  
(D=tp/T)  
Datasheet  
10  
Vꢀ2.2  
2019-10-18  
AIGB40N65F5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
Package Drawing PG-TO263-3  
MIN  
4.30  
0.00  
0.65  
0.95  
0.33  
1.17  
8.51  
7.10  
9.80  
6.50  
MAX  
4.57  
0.25  
0.85  
1.15  
0.65  
1.40  
9.45  
7.90  
10.31  
8.60  
MIN  
MAX  
0.180  
0.010  
0.033  
0.045  
0.026  
0.055  
0.372  
0.311  
0.406  
0.339  
0.169  
0.000  
0.026  
0.037  
0.013  
0.046  
0.335  
0.280  
0.386  
0.256  
Z8B00003324  
0
5
5
0
2.54  
5.08  
2
0.100  
0.200  
2
7.5mm  
14.61  
2.29  
0.70  
1.00  
16.05  
9.30  
4.50  
10.70  
3.65  
1.25  
15.88  
3.00  
1.60  
1.78  
16.25  
9.50  
4.70  
10.90  
3.85  
1.45  
0.575  
0.090  
0.028  
0.039  
0.632  
0.366  
0.177  
0.421  
0.144  
0.049  
0.625  
0.118  
0.063  
0.070  
0.640  
0.374  
0.185  
0.429  
0.152  
0.057  
30-08-2007  
01  
Datasheet  
11  
Vꢀ2.2  
2019-10-18  
AIGB40N65F5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
Testing Conditions  
VGE(t)  
I,V  
90% VGE  
trr = ta + tb  
dIF/dt  
Qrr = Qa + Qb  
a
b
10% VGE  
t
Qa  
Qb  
IC(t)  
dI  
90% IC  
90% IC  
10% IC  
10% IC  
Figure C. Definition of diode switching  
characteristics  
t
VCE(t)  
t
t
td(off)  
tf  
td(on)  
tr  
Figure A.  
VGE(t)  
90% VGE  
Figure D.  
10% VGE  
t
IC(t)  
CC  
2% IC  
t
VCE(t)  
Figure E. Dynamic test circuit  
Parasitic inductance L ,  
parasitic capacitor C ,  
s
s
relief capacitor C ,  
(only for ZVT switching)  
r
t2  
t4  
E
=
VCE x IC x dt  
E
=
VCE x IC x dt  
off  
on  
2% VCE  
t1  
t3  
t
t1  
t2  
t3  
t4  
Figure B.  
Datasheet  
12  
Vꢀ2.2  
2019-10-18  
AIGB40N65F5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
RevisionꢀHistory  
AIGB40N65F5  
Revision:ꢀ2019-10-18,ꢀRev.ꢀ2.2  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2019-06-07 Final Datasheet  
2019-10-18 updated fig.15  
2.1  
2.2  
Datasheet  
13  
Vꢀ2.2  
2019-10-18  
Trademarks  
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Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
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