AIKW30N60CT [INFINEON]
IGBT TRENCHSTOP™;
| 型号： | AIKW30N60CT |
| 厂家： | 
Infineon |
| 描述： | IGBT TRENCHSTOP™ 双极性晶体管 |
| 文件： | 总16页 (文件大小：1976K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AIKW30N60CT
TRENCHSTOPTMꢀSeries
LowꢀLossꢀDuoPack:ꢀIGBTꢀinꢀTRENCHSTOPTMꢀandꢀFieldstopꢀtechnology
withꢀsoft,ꢀfastꢀrecoveryꢀantiparallelꢀEmitterꢀControlledꢀdiode
ꢀ
C
E
Features:
•ꢀꢀAutomotiveꢀAEC-Q101ꢀqualified
•ꢀꢀDesignedꢀforꢀDC/ACꢀconvertersꢀforꢀAutomotiveꢀApplication
•ꢀꢀVeryꢀlowꢀꢀVCE(sat)ꢀ1.5Vꢀ(typ.)
•ꢀꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀꢀDynamicallyꢀstressꢀtested
G
•ꢀꢀShortꢀcircuitꢀwithstandꢀtimeꢀ5µs
•ꢀꢀ100%ꢀshortꢀcircuitꢀtested
•ꢀꢀ100%ꢀofꢀtheꢀpartsꢀareꢀdynamicallyꢀtested
•ꢀꢀPositiveꢀtemperatureꢀcoefficientꢀinꢀVCE(sat)
•ꢀꢀLowꢀEMI
•ꢀꢀLowꢀgateꢀchargeꢀQG
•ꢀꢀGreenꢀpackage
•ꢀꢀVeryꢀsoft,ꢀfastꢀrecoveryꢀantiparallelꢀEmitterꢀControlledꢀHE
ꢀꢀꢀdiode
•ꢀꢀTRENCHSTOPTMꢀandꢀFieldstopꢀtechnologyꢀforꢀ600V
ꢀꢀꢀapplicationsꢀoffers:
ꢀꢀꢀꢀꢀꢀ-ꢀveryꢀtightꢀparameterꢀdistribution
ꢀꢀꢀꢀꢀꢀ-ꢀhighꢀruggedness,ꢀtemperatureꢀstableꢀbehavior
ꢀꢀꢀꢀꢀꢀ-ꢀveryꢀhighꢀswitchingꢀspeed
G
C
E
Applications:
•ꢀꢀMainꢀinverter
•ꢀꢀClimateꢀcompressor
•ꢀꢀPTCꢀheater
•ꢀꢀMotorꢀdrives
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.5V 175°C
Marking
Package
PG-TO247-3
AIKW30N60CT
600V
30A
AK30DCT
Datasheet
www.infineon.com
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.1
2017-02-09
AIKW30N60CT
TRENCHSTOPTMꢀSeries
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet
2
Vꢀ2.1
2017-02-09
AIKW30N60CT
TRENCHSTOPTMꢀSeries
MaximumꢀRatings
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
600
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°C
TCꢀ=ꢀ100°C
IC
60.0
30.0
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
90.0
90.0
A
A
Turn off safe operating area
VCEꢀ≤ꢀ600V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
TCꢀ=ꢀ100°C
IF
60.0
30.0
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
90.0
±20
A
V
Gate-emitter voltage
Short circuit withstand time
VGEꢀ=ꢀ15.0V,ꢀVCCꢀ≤ꢀ400V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvjꢀ=ꢀ150°C
tSC
µs
5
PowerꢀdissipationꢀTCꢀ=ꢀ25°C
Operating junction temperature
Storage temperature
Ptot
Tvj
187.0
W
°C
°C
-40...+175
-55...+150
Tstg
Soldering temperature,1)
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
RthꢀCharacteristics
IGBT thermal resistance,2)
junction - case
Diode thermal resistance,2)
junction - case
Rth(j-c)
Rth(j-c)
Rth(j-a)
-
-
-
-
-
-
0.80 K/W
1.05 K/W
40 K/W
Thermal resistance
junction - ambient
1) Package not recommended for surface mount application
2) Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included.
Datasheet
3
Vꢀ2.1
2017-02-09
AIKW30N60CT
TRENCHSTOPTMꢀSeries
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.20mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ30.0A
600
-
-
V
V
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ25°C
-
-
1.50 2.05
1.90
Tvjꢀ=ꢀ175°C
-
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ30.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Diode forward voltage
VF
-
-
1.65 2.05
V
V
1.60
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ0.43mA,ꢀVCEꢀ=ꢀVGE
4.1
4.9
5.7
VCEꢀ=ꢀ600V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
-
40
-
µA
750
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ30.0A
-
-
-
100
-
nA
S
16.7
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
1630
108
50
-
-
-
Output capacitance
Coes
Cres
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
VCCꢀ=ꢀ480V,ꢀICꢀ=ꢀ20.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
167.0
13.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Short circuit collector current
Max. 1000 short circuits
Time between short circuits: ≥ 1.0s
VGEꢀ=ꢀ15.0V,ꢀVCCꢀ≤ꢀ400V,
tSCꢀ≤ꢀ5µs
Tvjꢀ=ꢀ150°C
IC(SC)
-
-
A
275
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
23
21
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ30.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ10.6Ω,ꢀRG(off)ꢀ=ꢀ10.6Ω,
Lσꢀ=ꢀ136nH,ꢀCσꢀ=ꢀ39pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
254
46
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.69
0.77
1.46
mJ
mJ
mJ
Turn-off energy
Total switching energy
Datasheet
4
Vꢀ2.1
2017-02-09
AIKW30N60CT
TRENCHSTOPTMꢀSeries
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
85
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ30.0A,
Qrr
0.80
16.0
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ910A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-630
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
24
26
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ175°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ30.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ10.6Ω,ꢀRG(off)ꢀ=ꢀ10.6Ω,
Lσꢀ=ꢀ136nH,ꢀCσꢀ=ꢀ39pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
292
90
ns
ns
Turn-on energy
Eon
Eoff
Ets
1.00
1.10
2.10
mJ
mJ
mJ
Turn-off energy
Total switching energy
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
240
2.39
22.0
-
-
-
ns
µC
A
Tvjꢀ=ꢀ175°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ30.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ910A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-320
-
A/µs
Datasheet
5
Vꢀ2.1
2017-02-09
AIKW30N60CT
TRENCHSTOPTMꢀSeries
200
180
160
140
120
100
80
60
50
40
30
20
10
0
60
40
20
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
Figure 2. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
temperature
(Tj≤175°C)
(VGE≥15V,ꢀTj≤175°C)
VGE=20V
VGE=20V
80
80
15V
15V
70
60
50
40
30
20
10
0
13V
11V
9V
70
60
50
40
30
20
10
0
13V
11V
9V
7V
7V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Typicalꢀoutputꢀcharacteristic
(Tj=25°C)
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tj=175°C)
Datasheet
6
Vꢀ2.1
2017-02-09
AIKW30N60CT
TRENCHSTOPTMꢀSeries
70
3.0
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0.0
Tvj = 25°C
Tvj = 175°C
IC = 15A
IC = 30A
IC = 60A
60
50
40
30
20
10
0
3
4
5
6
7
8
9
10
25
50
75
100
125
150
175
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 5. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
Figure 6. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas
aꢀfunctionꢀofꢀjunctionꢀtemperature
(VGE=15V)
1000
100
10
1000
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
100
1
10
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
RG,ꢀGATEꢀRESISTORꢀ[Ω]
Figure 7. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
collectorꢀcurrent
Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate
resistor
(inductiveꢀload,ꢀTj=175°C,ꢀVCE=400V,
VGE=0/15V,ꢀRG=10Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀTj=175°C,ꢀVCE=400V,
VGE=0/15V,ꢀIC=30A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
7
Vꢀ2.1
2017-02-09
AIKW30N60CT
TRENCHSTOPTMꢀSeries
1000
7
6
5
4
3
2
1
0
td(off)
tf
td(on)
tr
typ.
min.
max.
100
10
25
50
75
100
125
150
175
25
50
75
100
125
150
175
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
junctionꢀtemperature
Figure 10. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
IC=30A,ꢀRG=10Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(IC=0,43mA)
4.0
Eoff
Eon
Eoff
Eon
5
Ets
Ets
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4
3
2
1
0
0
10
20
30
40
50
60
0
10
20
30
40
50
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
RG,ꢀGATEꢀRESISTORꢀ[Ω]
Figure 11. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀcurrent
Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistor
(inductiveꢀload,ꢀTj=175°C,ꢀVCE=400V,
VGE=0/15V,ꢀRG=10Ω,ꢀDynamicꢀtestꢀcircuitꢀin
(inductiveꢀload,ꢀTj=175°C,ꢀVCE=400V,
VGE=0/15V,ꢀIC=30A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Figure E)
Datasheet
8
Vꢀ2.1
2017-02-09
AIKW30N60CT
TRENCHSTOPTMꢀSeries
2.5
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Eoff
Eon
Ets
Eoff
Eon
Ets
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
175
300
350
400
450
500
550
600
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
IC=30A,ꢀRG=10Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀTj=175°C,ꢀVGE=0/15V,
IC=30A,ꢀRG=10Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
20
VCCꢀ=ꢀ120V
VCCꢀ=ꢀ480V
Cies
Coes
Cres
18
1E+4
1000
100
16
14
12
10
8
6
4
2
0
10
0
20 40 60 80 100 120 140 160 180 200
0
5
10
15
20
25
30
QGE,ꢀGATEꢀCHARGEꢀ[nC]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15. Typicalꢀgateꢀcharge
(IC=30A)
Figure 16. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(VGE=0V,ꢀf=1MHz)
Datasheet
9
Vꢀ2.1
2017-02-09
AIKW30N60CT
TRENCHSTOPTMꢀSeries
500
400
300
200
100
0
14
12
10
8
6
4
2
0
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 17. Typicalꢀshortꢀcircuitꢀcollectorꢀcurrentꢀasꢀa
functionꢀofꢀgate-emitterꢀvoltage
Figure 18. Shortꢀcircuitꢀwithstandꢀtimeꢀasꢀaꢀfunctionꢀof
gate-emitterꢀvoltage
(VCE≤400V,ꢀstartꢀatꢀTj≤150°C)
(VCE=400V,ꢀstartꢀatꢀTj=25°C,ꢀTjmax≤150°C)
1
1
0.1
D = 0.5
0.2
D = 0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.02
0.02
0.01
0.01
single pulse
single pulse
0.01
0.01
i:
1
2
3
4
i:
1
2
3
4
ri[K/W]: 0.05279 0.19382 0.25779 0.29566
ri[K/W]: 0.22545 0.31252 0.26773 0.19517
τi[s]:
6.5E-5
4.7E-4
6.1E-3
0.06478
τi[s]:
2.2E-4
2.3E-3
0.01546 0.1079
0.001
1E-6
0.001
1E-5
1E-4
0.001
0.01
0.1
1
1E-7 1E-6 1E-5 1E-4 0.001 0.01
0.1
1
tp,ꢀPULSEꢀWIDTHꢀ[s]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 19. IGBTꢀtransientꢀthermalꢀimpedanceꢀasꢀa
Figure 20. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidthꢀforꢀdifferentꢀduty
functionꢀofꢀpulseꢀwidthꢀforꢀdifferentꢀduty
cyclesꢀD
(D=tp/T)
cyclesꢀD
(D=tp/T)
Datasheet
10
Vꢀ2.1
2017-02-09
AIKW30N60CT
TRENCHSTOPTMꢀSeries
300
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Tvj = 25°C, IF = 30A
Tvj = 175°C, IF = 30A
Tvj = 25°C, IF = 30A
Tvj = 175°C, IF = 30A
250
200
150
100
50
0
700 750 800 850 900 950 1000 1050 1100
700 750 800 850 900 950 1000 1050 1100
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction Figure 22. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V,DynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)
(VR=400V,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)
30
25
20
15
10
5
0
-100
-200
-300
-400
-500
-600
-700
-800
Tvj = 25°C, IF = 30A
Tvj = 175°C, IF = 30A
Tvj = 25°C, IF = 30A
Tvj = 175°C, IF = 30A
0
700 750 800 850 900 950 1000 1050 1100
700 750 800 850 900 950 1000 1050 1100
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 23. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
Figure 24. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
(VR=400V,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)
(VR=400V,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)
Datasheet
11
Vꢀ2.1
2017-02-09
AIKW30N60CT
TRENCHSTOPTMꢀSeries
80
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
Tvj = 25°C
Tvj = 175°C
IF = 15A
IF = 30A
IF = 60A
70
60
50
40
30
20
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25
50
75
100
125
150
175
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 25. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction Figure 26. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature
Datasheet
12
Vꢀ2.1
2017-02-09
AIKW30N60CT
TRENCHSTOPTMꢀSeries
Package Drawing PG-TO247-3
Datasheet
13
Vꢀ2.1
2017-02-09
AIKW30N60CT
TRENCHSTOPTMꢀSeries
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
Datasheet
14
Vꢀ2.1
2017-02-09
AIKW30N60CT
TRENCHSTOPTMꢀSeries
RevisionꢀHistory
AIKW30N60CT
Revision:ꢀ2017-02-09,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1
2017-02-09 Data sheet created
Datasheet
15
Vꢀ2.1
2017-02-09
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
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