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AIKW40N65DH5 [INFINEON]

IGBT TRENCHSTOP™ 5;
AIKW40N65DH5
型号： AIKW40N65DH5
厂家： Infineon    Infineon
描述：

IGBT TRENCHSTOP™ 5

双极性晶体管
文件： 总16页 (文件大小：1996K)
中文：  中文翻译
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AIKW40N65DH5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
HighꢀspeedꢀfastꢀIGBTꢀinꢀTRENCHSTOPTMꢀ5ꢀtechnologyꢀcopackedꢀwith  
RAPIDꢀ1ꢀfastꢀandꢀsoftꢀantiparallelꢀdiode  
ꢀ
C
E
FeaturesꢀandꢀBenefits:  
ꢀꢀꢀHighꢀspeedꢀH5ꢀtechnologyꢀoffering:  
•ꢀꢀBest-in-Classꢀefficiencyꢀinꢀhardꢀswitchingꢀandꢀresonant  
ꢀꢀꢀtopologies  
•ꢀꢀPlugꢀandꢀplayꢀreplacementꢀofꢀpreviousꢀgenerationꢀIGBTs  
•ꢀꢀ650Vꢀbreakdownꢀvoltage  
G
•ꢀꢀLowꢀgateꢀchargeꢀQG  
•ꢀꢀIGBTꢀcopackedꢀwithꢀRAPIDꢀ1ꢀfastꢀandꢀsoftꢀantiparallelꢀdiode  
•ꢀꢀMaximumꢀjunctionꢀtemperatureꢀ175°C  
•ꢀꢀDynamicallyꢀstressꢀtested  
•ꢀꢀQualifiedꢀaccordingꢀtoꢀAEC-Q101  
•ꢀꢀGreenꢀpackageꢀ(RoHSꢀcompliant)  
•ꢀꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:  
ꢀꢀꢀhttp://www.infineon.com/igbt/  
Applications:  
•ꢀꢀOff-boardꢀcharger  
•ꢀꢀOn-boardꢀcharger  
•ꢀꢀDC/DCꢀconverter  
•ꢀꢀPower-Factorꢀcorrection  
1
2
3
Packageꢀpinꢀdefinition:  
•ꢀꢀPinꢀ1ꢀ-ꢀgate  
•ꢀꢀPinꢀ2ꢀ&ꢀbacksideꢀ-ꢀcollector  
•ꢀꢀPinꢀ3ꢀ-ꢀemitter  
KeyꢀPerformanceꢀandꢀPackageꢀParameters  
Type  
VCE  
IC  
VCEsat,ꢀTvj=25°C Tvjmax  
1.66V 175°C  
Marking  
Package  
PG-TO247-3  
AIKW40N65DH5  
650V  
40A  
AK40EDH5  
Datasheet  
www.infineon.com  
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument  
Vꢀ2.1  
2017-06-30  
AIKW40N65DH5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13  
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16  
Datasheet  
2
Vꢀ2.1  
2017-06-30  
AIKW40N65DH5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
MaximumꢀRatings  
Parameter  
Symbol  
Value  
Unit  
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C  
VCE  
650  
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax  
TCꢀ=ꢀ25°C  
TCꢀ=ꢀ100°C  
IC  
74.0  
46.0  
A
1)  
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax  
ICpuls  
120.0  
120.0  
A
A
Turn off safe operating area  
-
VCEꢀ≤ꢀ650V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs1)  
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax  
TCꢀ=ꢀ25°C  
TCꢀ=ꢀ100°C  
IF  
36.0  
21.0  
A
1)  
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax  
IFpuls  
VGE  
120.0  
A
V
Gate-emitter voltage  
±20  
±30  
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)  
PowerꢀdissipationꢀTCꢀ=ꢀ25°C  
PowerꢀdissipationꢀTCꢀ=ꢀ100°C  
250.0  
125.0  
Ptot  
W
Operating junction temperature  
Tvj  
-40...+175  
-55...+150  
°C  
°C  
Storage temperature  
Tstg  
Soldering temperature,2)  
wave soldering 1.6mm (0.063in.) from case for 10s  
°C  
260  
0.6  
Mounting torque, M3 screw  
Maximum of mounting processes: 3  
M
Nm  
ThermalꢀResistance  
Value  
min. typ. max.  
Parameter  
Symbol Conditions  
Unit  
RthꢀCharacteristics  
IGBT thermal resistance,  
junction - case  
Rth(j-C)  
Rth(j-C)  
Rth(j-a)  
-
-
-
-
-
-
0.60 K/W  
1.80 K/W  
40 K/W  
Diode thermal resistance,  
junction - case  
Thermal resistance  
junction - ambient  
1) Defined by design. Not subject to production test.  
2) Package not recommended for surface mount applications.  
Datasheet  
3
Vꢀ2.1  
2017-06-30  
AIKW40N65DH5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
StaticꢀCharacteristic  
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.20mA  
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ40.0A  
Tvjꢀ=ꢀ25°C  
Collector-emitter saturation voltage VCEsat  
Tvjꢀ=ꢀ125°C  
650  
-
-
V
V
-
-
-
1.66 2.10  
1.85  
2.05  
-
-
Tvjꢀ=ꢀ175°C  
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ20.0A  
Tvjꢀ=ꢀ25°C  
Tvjꢀ=ꢀ125°C  
Tvjꢀ=ꢀ175°C  
-
-
-
1.55 1.80  
Diode forward voltage  
VF  
V
1.53  
1.49  
-
-
Gate-emitter threshold voltage  
VGE(th)  
ICꢀ=ꢀ0.40mA,ꢀVCEꢀ=ꢀVGE  
3.2  
4.0  
4.8  
V
VCEꢀ=ꢀ650V,ꢀVGEꢀ=ꢀ0V  
Tvjꢀ=ꢀ25°C  
Tvjꢀ=ꢀ175°C  
Zero gate voltage collector current ICES  
-
-
-
40  
-
µA  
800  
Gate-emitter leakage current  
Transconductance  
IGES  
gfs  
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V  
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ40.0A  
-
-
-
100  
-
nA  
S
50.0  
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
DynamicꢀCharacteristic  
Input capacitance  
Cies  
-
-
-
2300  
43  
-
-
-
Output capacitance  
Coes  
Cres  
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz  
pF  
Reverse transfer capacitance  
9
VCCꢀ=ꢀ520V,ꢀICꢀ=ꢀ40.0A,  
VGEꢀ=ꢀ15V  
Gate charge  
QG  
LE  
-
-
92.0  
13.0  
-
-
nC  
nH  
Internal emitter inductance  
measured 5mm (0.197 in.) from  
case  
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
20  
11  
-
-
-
-
-
-
-
ns  
ns  
Tvjꢀ=ꢀ25°C,  
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ20.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
RG(on)ꢀ=ꢀ15.0Ω,ꢀRG(off)ꢀ=ꢀ15.0Ω,  
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Energy losses include “tail” and  
diode reverse recovery.  
Turn-off delay time  
Fall time  
153  
11  
ns  
ns  
Turn-on energy  
Eon  
Eoff  
Ets  
0.38  
0.12  
0.50  
mJ  
mJ  
mJ  
Turn-off energy  
Total switching energy  
Datasheet  
4
Vꢀ2.1  
2017-06-30  
AIKW40N65DH5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
18  
4
-
-
-
-
-
-
-
ns  
ns  
Tvjꢀ=ꢀ25°C,  
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ5.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
RG(on)ꢀ=ꢀ15.0Ω,ꢀRG(off)ꢀ=ꢀ15.0Ω,  
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Energy losses include “tail” and  
diode reverse recovery.  
Turn-off delay time  
Fall time  
161  
24  
ns  
ns  
Turn-on energy  
Turn-off energy  
Total switching energy  
Eon  
Eoff  
Ets  
0.08  
0.04  
0.12  
mJ  
mJ  
mJ  
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C  
Diode reverse recovery time  
Diode reverse recovery charge  
trr  
-
-
-
75  
-
-
-
ns  
µC  
A
Tvjꢀ=ꢀ25°C,  
VRꢀ=ꢀ400V,  
IFꢀ=ꢀ20.0A,  
diF/dtꢀ=ꢀ1000A/µs  
Qrr  
0.52  
13.1  
Diode peak reverse recovery current Irrm  
Diode peak rate of fall of reverse  
recoveryꢀcurrentꢀduringꢀtb  
dirr/dt  
-
-217  
-
A/µs  
Diode reverse recovery time  
Diode reverse recovery charge  
trr  
-
-
-
37  
-
-
-
ns  
µC  
A
Tvjꢀ=ꢀ25°C,  
VRꢀ=ꢀ400V,  
IFꢀ=ꢀ5.0A,  
Qrr  
0.23  
10.2  
Diode peak reverse recovery current Irrm  
diF/dtꢀ=ꢀ1000A/µs  
Diode peak rate of fall of reverse  
recoveryꢀcurrentꢀduringꢀtb  
dirr/dt  
-
-550  
-
A/µs  
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
20  
12  
-
-
-
-
-
-
-
ns  
ns  
Tvjꢀ=ꢀ150°C,  
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ20.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
RG(on)ꢀ=ꢀ15.0Ω,ꢀRG(off)ꢀ=ꢀ15.0Ω,  
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Energy losses include “tail” and  
diode reverse recovery.  
Turn-off delay time  
Fall time  
190  
14  
ns  
ns  
Turn-on energy  
Eon  
Eoff  
Ets  
0.57  
0.22  
0.79  
mJ  
mJ  
mJ  
Turn-off energy  
Total switching energy  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
17  
4
-
-
-
-
-
-
-
ns  
ns  
Tvjꢀ=ꢀ150°C,  
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ5.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
RG(on)ꢀ=ꢀ15.0Ω,ꢀRG(off)ꢀ=ꢀ15.0Ω,  
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Energy losses include “tail” and  
diode reverse recovery.  
Turn-off delay time  
Fall time  
223  
25  
ns  
ns  
Turn-on energy  
Turn-off energy  
Total switching energy  
Eon  
Eoff  
Ets  
0.16  
0.06  
0.22  
mJ  
mJ  
mJ  
Datasheet  
5
Vꢀ2.1  
2017-06-30  
AIKW40N65DH5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C  
Diode reverse recovery time  
Diode reverse recovery charge  
trr  
-
-
-
128  
1.22  
18.6  
-
-
-
ns  
µC  
A
Tvjꢀ=ꢀ150°C,  
VRꢀ=ꢀ400V,  
IFꢀ=ꢀ20.0A,  
Qrr  
Diode peak reverse recovery current Irrm  
diF/dtꢀ=ꢀ1000A/µs  
Diode peak rate of fall of reverse  
recoveryꢀcurrentꢀduringꢀtb  
dirr/dt  
-
-170  
-
A/µs  
Diode reverse recovery time  
Diode reverse recovery charge  
trr  
-
-
-
68  
-
-
-
ns  
µC  
A
Tvjꢀ=ꢀ150°C,  
VRꢀ=ꢀ400V,  
IFꢀ=ꢀ5.0A,  
Qrr  
0.58  
15.5  
Diode peak reverse recovery current Irrm  
diF/dtꢀ=ꢀ1000A/µs  
Diode peak rate of fall of reverse  
recoveryꢀcurrentꢀduringꢀtb  
dirr/dt  
-
-320  
-
A/µs  
Datasheet  
6
Vꢀ2.1  
2017-06-30  
AIKW40N65DH5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
275  
250  
225  
200  
175  
150  
125  
100  
75  
80  
70  
60  
50  
40  
30  
20  
10  
0
50  
25  
0
25  
50  
75  
100  
125  
150  
175  
25  
50  
75  
100  
125  
150  
175  
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]  
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]  
Figure 1. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase  
Figure 2. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase  
temperature  
temperature  
(Tvj≤175°C)  
(VGE≥15V,ꢀTvj≤175°C)  
120  
120  
100  
100  
VGE = 20V  
VGE = 20V  
18V  
18V  
80  
80  
15V  
15V  
12V  
12V  
10V  
8V  
7V  
6V  
5V  
10V  
8V  
7V  
6V  
5V  
60  
40  
20  
0
60  
40  
20  
0
0
1
2
3
4
5
0
1
2
3
4
5
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 3. Typicalꢀoutputꢀcharacteristic  
(Tvj=25°C)  
Figure 4. Typicalꢀoutputꢀcharacteristic  
(Tvj=150°C)  
Datasheet  
7
Vꢀ2.1  
2017-06-30  
AIKW40N65DH5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
120  
2.50  
2.25  
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
Tj = 25°C  
Tj = 150°C  
IC = 5A  
IC = 10A  
IC = 20A  
IC = 40A  
100  
80  
60  
40  
20  
0
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
0
25  
50  
75  
100  
125  
150  
175  
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 5. Typicalꢀtransferꢀcharacteristic  
(VCE=20V)  
Figure 6. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas  
aꢀfunctionꢀofꢀjunctionꢀtemperature  
(VGE=15V)  
1000  
1000  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
100  
10  
1
100  
10  
1
0
20  
40  
60  
80  
100  
120  
5
15  
25  
35  
45  
55  
65  
75  
85  
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]  
rG,ꢀGATEꢀRESISTORꢀ[Ω]  
Figure 7. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  
collectorꢀcurrent  
Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate  
resistor  
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,  
VGE=15/0V,ꢀrG=15Ω,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,  
VGE=15/0V,ꢀIC=20A,Dynamicꢀtestꢀcircuitꢀin  
Figure E)  
Datasheet  
8
Vꢀ2.1  
2017-06-30  
AIKW40N65DH5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
1000  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
td(off)  
tf  
td(on)  
tr  
typ.  
min.  
max.  
100  
10  
1
25  
50  
75  
100  
125  
150  
175  
0
25  
50  
75  
100  
125  
150  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  
junctionꢀtemperature  
Figure 10. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction  
ofꢀjunctionꢀtemperature  
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=15/0V,  
(IC=0.4mA)  
IC=20A,ꢀrG=15Ω,DynamicꢀtestꢀcircuitꢀinꢀFigure  
E)  
8
7
6
5
4
3
2
1
0
1.6  
Eoff  
Eon  
Ets  
Eoff  
Eon  
Ets  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
0
20  
40  
60  
80  
100  
120  
5
15  
25  
35  
45  
55  
65  
75  
85  
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]  
rG,ꢀGATEꢀRESISTORꢀ[Ω]  
Figure 11. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀcollectorꢀcurrent  
Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀgateꢀresistor  
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,  
VGE=15/0V,ꢀrG=15Ω,Dynamicꢀtestꢀcircuitꢀin  
Figure E)  
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,  
VGE=15/0V,ꢀIC=20A,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
Datasheet  
9
Vꢀ2.1  
2017-06-30  
AIKW40N65DH5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
0.9  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
Eoff  
Eon  
Ets  
Eoff  
Eon  
Ets  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
25  
50  
75  
100  
125  
150  
175  
200  
250  
300  
350  
400  
450  
500  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀjunctionꢀtemperature  
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=15/0V,  
IC=20A,ꢀrG=15Ω,Dynamicꢀtestꢀcircuitꢀin  
Figure E)  
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀcollectorꢀemitterꢀvoltage  
(inductiveꢀload,ꢀTvj=150°C,ꢀVGE=15/0V,  
IC=20A,ꢀrG=15Ω,Dynamicꢀtestꢀcircuitꢀin  
Figure E)  
16  
1E+4  
VCCꢀ=ꢀ130V  
VCCꢀ=ꢀ520V  
Cies  
Coes  
Cres  
14  
12  
10  
8
1000  
100  
10  
6
4
2
0
1
0
20  
40  
60  
80  
100  
0
5
10  
15  
20  
25  
30  
QGE,ꢀGATEꢀCHARGEꢀ[nC]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 15. Typicalꢀgateꢀcharge  
(IC=40A)  
Figure 16. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof  
collector-emitterꢀvoltage  
(VGE=0V,ꢀf=1MHz)  
Datasheet  
10  
Vꢀ2.1  
2017-06-30  
AIKW40N65DH5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
1
1
D = 0.5  
0.2  
D = 0.5  
0.2  
0.1  
0.1  
0.1  
0.05  
0.05  
0.1  
0.02  
0.02  
0.01  
0.01  
single pulse  
single pulse  
0.01  
0.01  
i:  
ri[K/W]: 0.08245484 0.144197 0.2151774 0.1581708  
τi[s]: 7.3E-5 7.0E-4 0.01235548 0.08020881  
1
2
3
4
i:  
1
2
3
ri[K/W]: 0.6701584 0.775759 0.3540826  
τi[s]:  
3.4E-4  
4.7E-3  
0.04680901  
0.001  
1E-6  
0.001  
1E-5  
1E-4  
0.001  
0.01  
0.1  
1
1E-7 1E-6 1E-5 1E-4 0.001 0.01  
0.1  
1
tp,ꢀPULSEꢀWIDTHꢀ[s]  
tp,ꢀPULSEꢀWIDTHꢀ[s]  
Figure 17. IGBTꢀtransientꢀthermalꢀimpedance  
(D=tp/T)  
Figure 18. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa  
functionꢀofꢀpulseꢀwidth  
(D=tp/T)  
160  
1.4  
Tj = 25°C, IF = 20A  
Tj = 25°C, IF = 20A  
Tj = 150°C, IF = 20A  
Tj = 150°C, IF = 20A  
1.3  
150  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
140  
130  
120  
110  
100  
90  
80  
70  
60  
500  
700  
900  
1100  
1300  
1500  
500  
700  
900  
1100  
1300  
1500  
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  
Figure 19. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction Figure 20. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa  
ofꢀdiodeꢀcurrentꢀslope  
functionꢀofꢀdiodeꢀcurrentꢀslope  
(VR=400V)  
(VR=400V)  
Datasheet  
11  
Vꢀ2.1  
2017-06-30  
AIKW40N65DH5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
22  
0
-50  
Tj = 25°C, IF = 20A  
Tj = 150°C, IF = 20A  
Tj = 25°C, IF = 20A  
Tj = 150°C, IF = 20A  
21  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
10  
9
-100  
-150  
-200  
-250  
-300  
-350  
-400  
8
7
500  
700  
900  
1100  
1300  
1500  
500  
700  
900  
1100  
1300  
1500  
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  
Figure 21. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa  
functionꢀofꢀdiodeꢀcurrentꢀslope  
(VR=400V)  
Figure 22. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse  
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode  
currentꢀslope  
(VR=400V)  
60  
2.2  
Tj = 25°C  
Tj = 150°C  
IF = 10A  
IF = 20A  
IF = 40A  
2.0  
50  
40  
30  
20  
10  
0
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
25  
50  
75  
100  
125  
150  
175  
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 23. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction Figure 24. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction  
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature  
Datasheet  
12  
Vꢀ2.1  
2017-06-30  
AIKW40N65DH5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
Package Drawing PG-TO247-3  
Datasheet  
13  
Vꢀ2.1  
2017-06-30  
AIKW40N65DH5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
Testing Conditions  
VGE(t)  
I,V  
90% VGE  
trr = ta + tb  
dIF/dt  
Qrr = Qa + Qb  
a
b
10% VGE  
t
Qa  
Qb  
IC(t)  
dI  
90% IC  
90% IC  
10% IC  
10% IC  
Figure C. Definition of diode switching  
characteristics  
t
VCE(t)  
t
t
td(off)  
tf  
td(on)  
tr  
Figure A.  
VGE(t)  
90% VGE  
Figure D.  
10% VGE  
t
IC(t)  
CC  
2% IC  
t
VCE(t)  
Figure E. Dynamic test circuit  
Parasitic inductance L ,  
parasitic capacitor C ,  
s
s
relief capacitor C ,  
(only for ZVT switching)  
r
t2  
t4  
E
=
VCE x IC x dt  
E
=
VCE x IC x dt  
off  
on  
2% VCE  
t1  
t3  
t
t1  
t2  
t3  
t4  
Figure B.  
Datasheet  
14  
Vꢀ2.1  
2017-06-30  
AIKW40N65DH5  
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration  
RevisionꢀHistory  
AIKW40N65DH5  
Revision:ꢀ2017-06-30,ꢀRev.ꢀ2.1  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2.1  
2017-06-30 Data sheet created  
Datasheet  
15  
Vꢀ2.1  
2017-06-30  
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG  
µHVIC™,ꢀµIPM™,ꢀµPFC™,ꢀAU-ConvertIR™,ꢀAURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCIPURSE™,ꢀCoolDP™,  
CoolGaN™,ꢀCOOLiR™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀDAVE™,ꢀDI-POL™,ꢀDirectFET™,ꢀDrBlade™,ꢀEasyPIM™,  
EconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀGaNpowIR™,  
HEXFET™,ꢀHITFET™,ꢀHybridPACK™,ꢀiMOTION™,ꢀIRAM™,ꢀISOFACE™,ꢀIsoPACK™,ꢀLEDrivIR™,ꢀLITIX™,ꢀMIPAQ™,  
ModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPowIRaudio™,ꢀPowIRStage™,ꢀPrimePACK™,  
PrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀSmartLEWIS™,ꢀSOLIDꢀFLASH™,ꢀSPOC™,  
StrongIRFET™,ꢀSupIRBuck™,ꢀTEMPFET™,ꢀTRENCHSTOP™,ꢀTriCore™,ꢀUHVIC™,ꢀXHP™,ꢀXMC™  
ꢀ
TrademarksꢀupdatedꢀNovemberꢀ2015  
ꢀ
OtherꢀTrademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
ꢀ
ꢀ
ꢀ
ꢀ
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀInfineonꢀTechnologiesꢀAGꢀ2017.  
AllꢀRightsꢀReserved.  
ImportantꢀNotice  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics  
(“Beschaffenheitsgarantie”).ꢀWithꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀany  
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liabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitationꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthird  
party.  
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀof  
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