AUIR3200S_15_技术文档

Automotive grade

AUIR3200S

MOSFET DRIVER WITH PROTECTION AND DIAGNOSTIC

Features

Product Summary

•

Bootstrap and charge pump

Over temperature shutdown (with Ptc interface)

Short circuit protection (Vds detection)

Reverse battery protection (turns On the MOSFET)

Diagnostic

Operating voltage 6-36V

Vgate 6V

ESD protection

Description

Package

The AUIR3200S is a high side mosfet driver for very low

Rdson automotive application. It offers over-current, over-

temperature protection and diagnostic. The over-current

protection is done by monitoring the Vds voltage, the

threshold is programmable by external resistor. The over-

temperature protection uses a thermal sensor. The

AUIR3200S offers diagnostic on the input pin.

SO8

Ordering Information

Standard Pack

Form

Base Part Number

Package Type

Complete Part Number

Quantity

Tube

Tape and Reel

95

AUIR3200S

SOIC-8 leads

2500

AUIR3200STR

1

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November 02, 2012

AUIR3200S

Typical Connection

Ptc

+Bat

Rvds

Vds

Ptc

Vcc

G

Rin

MOSFET

Logic level

Rgate

In/Dg

S

Rdiag

Gnd Cboot

AUIR3200S

Input Signal

V Diag

100nF

Load

2

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November 02, 2012

AUIR3200S

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters

are referenced to Ground lead. (Tj= -40°C..150°C unless otherwise specified).

Symbol

Vcc-gnd

Vcc-Vds

Vcc-Vptc

Vin-gnd

Vcc-Vs

Vcboot-Vs

Vcc cont.

Parameter

Maximum Vcc voltage

Maximum Vds pin voltage

Maximum Ptc pin voltage

Maximum IN pin voltage

Min. Max. Units

-0.3



60

5.5

60

V

Maximum S pin voltage

Maximum Cboot pin voltage

Maximum continuous Vcc voltage

Maximum operating junction temperature

Maximum storage temperature

Soldering temperature (10 seconds)

8

36

-40

-55



150

300

Tj max.

°C

Tsoldering

Thermal Characteristics

Symbol

Parameter

Typ. Max. Units

100 °C/W

Rth

Thermal resistance junction to ambient



Recommended Operating Conditions

Symbol

VIH

Parameter

Min. Max. Units

High level input voltage

2.7

0

10

4

5.5

0.9

15

V

VIL

Low level input voltage

Rin

Rdiag

Recommended resistor in series with IN pin

Recommended resistor in series with Diag pin

KΩ

15

3

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November 02, 2012

AUIR3200S

Static Electrical Characteristics

Tj=-40°C..125°C, Vcc=6-36V (unless otherwise specified), typical value are given for Vcc=14V and Tj=25°C.

Symbol

Vcc op.

Icc Off

Parameter

Operating voltage range

Supply current in sleep mode Tj=25°C

Min. Typ. Max. Units Test Conditions

6



36

V



1

5

µA

Vcc=14V, Vin=0V

Vin=5V, Vptc=Vbat,

Vds=Vbat

Icc On

Supply current when On



10

15

mA

VIH

VIL

In hyst.

Iin on

Vgs

IN High threshold voltage

IN Low threshold voltage

Input hysteresis

On state input current

Gate output voltage



0.5

0.2



2

2.6

2.1

1

50



1.7

0.5

33

V

µA

Vin=5V

5

5.7

Igs=0µA

Gate output voltage during reverse

battery Tj=25°C

Input voltage when the part is in fault

mode

Vgs rev

Vin, off

4.5

5.6



Igs=50µA, Vbat=14V

Idg=300µA

V



0.25

0.4

Protection Characteristics

Tj=-40°C..125°C, Vcc=6-36V (unless otherwise specified), typical value are given for Vcc=14V and Tj=25°C.

Symbol

Ivds

Parameter

Vds current reference

Min. Typ. Max. Units

Test Conditions

0.7

0.84

1

0.8

0.93

1.15

0

0.91

1.05

1.33

10

Vcc-Vds=0V, Tj=-40°C

Vcc-Vds=0V, Tj=25°C

Vcc-Vds=0V, Tj=125°C

mA

Vds offset

Tblank on

Vds comparator offset

Vds detection blanking time during turn

on

PTC comparator voltage threshold

(Vcc-Vptc)

-10

mV

µs

15

22

2

35

Vptc

1.5

2.5

V

Vin=5V, Vcc=14V

Rptc

Tdiag

Tsleep

Pull down resistor on the PTC pin

Diagnostic time

Time to enter in sleep mode

Time to enter in sleep mode and reset

the fault

4



7

10

15

20



30

kΩ

see figure 2

ms

Treset

Twkp



5



see figure 2

Rin=10k

see figure 3 & 4

Time to leave the sleep mode

0.5



µs

Tpwr on rst

UV

Power on reset duration Tj=25°C

Under voltage threshold

40



100

5.2

200

5.9

µs

V

T UV hold

Time to keep UV detection active

150

350

600

µs

4

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November 02, 2012

AUIR3200S

Switching Characteristics

Tj=-40..125°C, Vcc=6..36V (unless otherwise specified), typical value are given for Vcc=14V and Tj=25°C.

Symbol

Tdon

Tr

Tdoff

Tf

Igs+

Igs-

Iboot

Vboot-Source

Parameter

Min. Typ. Max. Units Test Conditions

Turn-on delay to 20% of Vgs

Rise time 20% to 80% of Vgs

Turn off delay time to 80% of Vgs

Fall time from 80% to 20% of Vgs

Gate output high pulsed current

Gate output low pulsed current

Cboot capacitor charge current

Cboot capacitor charge voltage



1.6



Qg=220nc,



1

2

Rgate=0Ω

µs



1

100

0.35

5.6

160

130

0.8

6

Vgs=0V

Vgs=5.7V

mA

A

V

True Table

Operating Conditions

Normal ON

IN

H

L

H

L

OUT

DG

H

L

H

L

Normal OFF

Short circuit to Gnd

Over-temperature

H

L

5

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November 02, 2012

AUIR3200S

Lead Assignments

Functional Block Diagram

All values are typical

VCC

Vds

PTC

6V

1mA

6V

75V

Charge

Pump

Vcc-6V

2V

Level

Shifter

Driver

S

R

Q

G

IN/DG

1.7V

6V

+

-

t Blanking

ON

6V

S

Diagnostic

Sleep mode

-

11V

Boot strap

regulator

+

Vcc-2V

4 clk

Counter

Cboot

UV

Vcc-6V

GND

6

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November 02, 2012

AUIR3200S

Over-current protection

The over-current protection is done by monitoring the Vds voltage of the Mosfet. The threshold is adjusted by connecting

the appropriate resistor between Vcc and Vds pin. Below the formula to set the appropriate over-current threshold:

Ivds× Rvds

Isd _ threshold =

RdsOn

The Ivds has a positive temperature coefficient to compensate the positive temperature coefficient of the Rdson of the

Mosfet.

The above formula is only valid when the Mosfet is fully ON. Therefore during the turn on of the MOSFET, the time

‘Tblank on’ disable the vds protection until the Mosfet is fully On.

Over-temperature protection

The temperature protection uses a PTC sensor connected to the tab or the drain of the Mosfet depending on the

mounting. The purpose is to maximize the thermal interface between the sensor and the junction. The PTC sensor, the

Vds threshold and the Mosfet must be chosen in order to not exceed the maximum junction temperature of the Mosfet

during a short circuit.

Protection is evaluated by switching the Mosfet on different currents and by evaluating the junction temperature when the

Mosfet is switched off by the protections. This gives the following drawing. For high impedance short circuit, Vds is smaller

than Vds threshold, so the over-temperature will act. For low impedance short circuit, the Vds protection will switch off the

Mosfet. At the transition current between the 2 protections the junction temperature of the Mosfet is the maximum and

should be lower than the maximum rating.

Over-temperature

protection

Over-current

protection

Short circuit current

Figure 1

7

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November 02, 2012

AUIR3200S

Sleep_mode / Diagnostic

Sleep_mode block manages the diagnostic and the sleep_mode. The device enters in sleep mode if input is inactive

during a delay higher than Tsleep.

IN

out

diag

internal

tdiag

tsleep

diag

tdiag

treset

Normal mode

Fault mode

sleep mode

Figure 2

Wake up sequence

To wake up the part from the sleep mode, the input must be activated at least during Twkp, then the bootstrap regulator is

switched on and the bootstrap capacitor is charged. The output will not be activated during Tpw on rst.

tsleep

IN

tpw on rst

out

twkp

sleep mode

Normal mode

sleep mode

Figure 3

IN

tpw on rst

twkp

out

sleep mode

Normal mode

Figure 4

8

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November 02, 2012

AUIR3200S

Bootstrap

The bootstrap capacitor provides the necessary current to the driver in order to charge the gate capacitor to the right

voltage level.

A design rule to select the bootstrap capacitor value is to choose 10 times the gate capacitance.

You can find in the Mosfet datasheet ‘Qg max’ for a specific Vgs.

Use this equation to calculate Cboot value:

Qg max

Cboot =10×

Vgs

The AUIR3200S integrates a bootstrap regulator to maintain a fixed voltage (Vboot=6V) on the bootstrap capacitor for any

battery voltage.

The regulator is off during the sleep mode to reduce the current consumption.

The power on reset is necessary to charge the bootstrap capacitor before turns on the power mosfet. The bootstrap

capacitor gets its charge through the load. So the time to charge it depends of the load.

But the power on reset doesn’t monitor the bootstrap capacitor voltage. Its time is set internally to allow starting the most

of load without implement a special sequence:

The power on reset is long enough to charge the bootstrap capacitor before turns on the power mosfet.

Power on reset

time

V_in

Vcc

4mA

V_boot

Cboot

charged

6.6V

Iboot

Vboot

Load

Out

V_gs

Time to charge the

bootstrap capacitor

Figure 5

Figure 6

9

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November 02, 2012

AUIR3200S

If the inductance of the load is too important, the power on reset is not enough long to charge completely the bootstrap

capacitor before turns on the power mosfet.

So the micro-processor need to implement a special sequence to start the device without activates the output power

mosfet.

The micro-processor send one short pulse (Twkp min < short pulse < Tpwr_on_rst) then wait for the bootstrap capacitor is

totally charged and after provide the appropriate duty cycle.

The bootstrap charge depends of the battery voltage, the bootstrap capacitor value and the inductance load value.

Power on reset

time

V

Twake min

in

V_boot

charged

V_gs

Time to charge the

bootstrap capacitor

Figure 7

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November 02, 2012

AUIR3200S

IN frequency and duty cycle

The Vds protection is not active if the time ON is lower than Tblank on.

So the minimum time ON (ton) is ‘Tblank on max’ to be sure that this protection will be active.

The times OFF (toff) needs to be setup for assure that the capacitor bootstrap will be recharged up to 6V. The bootstrap

time charge depends of the bootstrap capacitor value and the inductance load value.

ton

IN

toff

6V

Vboot

0V

Vds

MOSFET

Vds

threshold

0V

Vdiag

Normal mode

Figure 8

If the capacitor is discharged at the turn ON of the MOSFET, the AUIR3200S will detect a fault (VDS protection) after

Tblank ON because the MOSFET won’t be fully ON.

IN

Vboot

0V

VDS > VDS threshold

Vds

MOSFET

VDS threshold

0V

Tblank On

Vdiag

Normal mode

Fault mode

Figure 9

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November 02, 2012

AUIR3200S

Under voltage protection in short-circuit mode

During short circuit condition, it may happen that the supply voltage drops below the under voltage before the short is

detected by the Vds protection due to the blanking time ‘Tblank on’.

In under voltage condition the AUIR3200S turns off the MOSFET. The time ‘Tblank On’ is reset.

IN

Vcc

UV

0V

T UV hold

Vds

MOSFET

0V

Tblank On

Figure 10

In order to detect the short circuit condition, the AUIR3200S has a counter and after 4 ‘under voltage’ detections, the part

is latched and the fault diagnostic is activated. The counter is reset when the part goes to sleep mode.

IN

Vcc

UV

0V

Vds

MOSFET

0V

Vdiag

Normal mode

Fault mode

sleep mode

Figure 11

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November 02, 2012

AUIR3200S

PWM operation ( Ton<Tblank on)

PWM operation is also possible. The boostrap feature allows fast switching. When the Ton is shorter than the Tblank On,

the Vds protection is no longer activated. In order to protect the Power Mosfet, the AUIR3200S integrates a counter which

is incremented by the input signal and reset when the Vds voltage is below the Vds threshold. The counter latches off the

AUIR3200S after 4 activations. During PWM operation ( Ton< Tblank On) on a short circuit, the Vds is always above the

Vds threshold and 4 activations on the input will latch the AUIR3200S and the fault diagnostic is activated.

IN

<Tblank On

1

2

3

4

Vds

MOSFET

Vds th

0V

Vdiag

Normal mode

Fault mode

Figure 12

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November 02, 2012

AUIR3200S

Parameters curves: typical value

3

2

1

0

2

1

0

VIH

VIL

0

Iccoff

-40

10

60

110

-50

-25

0

25

50

75

100 125 150

Tj, junction temperature (°C)

Figure 14: Vih and Vil (V) Vs Tj (°C)

Figure 13: Icc off (µA) Vs Tj (°C) Vcc=14V,Vin=0V)

7

6

5

4

3

2

1

0

10

20

30

Vcc, operating voltage, V

Figure 15: Vgs vs Vcc with Ivgs=50µA

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November 02, 2012

AUIR3200S

Case Outline – SO8

Tape & Reel SO8

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November 02, 2012

AUIR3200S

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November 02, 2012

AUIR3200S

Part Marking Information

Qualification Information^†

Automotive

(per AEC-Q100)

Qualification Level

Comments: This family of ICs has passed an Automotive qualification. IR’s

Industrial and Consumer qualification level is granted by extension of the

higher Automotive level.

MSL2 260°C

SOIC8N

Moisture Sensitivity Level

(per IPC/JEDEC J-STD-020)

Class M1B(+/-100V)

(per AEC-Q100-003)

Class H1C (+/-1500V)

Machine Model

ESD

Human Body Model

(

)

per AEC-Q100-002

Class C4 (+/-1000V)

(per AEC-Q100-011)

Class II, Level A

(per AEC-Q100-004)

Yes

Charged Device Model

IC Latch-Up Test

RoHS Compliant

†

Qualification standards can be found at International Rectifier’s web site http://www.irf.com/

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November 02, 2012

AUIR3200S

IMPORTANT NOTICE

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)

reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and

services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU”

prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and

process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order

acknowledgment.

IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with

IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to

support this warranty. Except where mandated by government requirements, testing of all parameters of each product is

not necessarily performed.

IR assumes no liability for applications assistance or customer product design. Customers are responsible for their

products and applications using IR components. To minimize the risks with customer products and applications,

customers should provide adequate design and operating safeguards.

Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and

is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with

alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation.

Information of third parties may be subject to additional restrictions.

Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or

service voids all express and any implied warranties for the associated IR product or service and is an unfair and

deceptive business practice. IR is not responsible or liable for any such statements.

IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into

the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the

IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products

for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers,

employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and

reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such

unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of

the product.

Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are

designed and manufactured to meet DLA military specifications required by certain military, aerospace or other

applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in

applications requiring military grade products, is solely at the Buyer’s own risk and that they are solely responsible for

compliance with all legal and regulatory requirements in connection with such use.

IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR

products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the

designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive

applications, IR will not be responsible for any failure to meet such requirements.

For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/

WORLD HEADQUARTERS:

101 N. Sepulveda Blvd., El Segundo, California 90245

Tel: (310) 252-7105

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AUIR3200S

Revision History

Revision

Date

Notes/Changes

A

November 2, 2012

Initial release

19 www.irf.com

November 02, 2012


型号：	AUIR3200S_15
厂家：	Infineon
描述：	MOSFET DRIVER WITH PROTECTION AND DIAGNOSTIC 驱动
文件：	总19页 (文件大小：485K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AUIR3200S_15 [INFINEON]

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