AUIRF1405ZL [INFINEON]
HEXFET® Power MOSFET; HEXFET㈢功率MOSFET
| 型号： | AUIRF1405ZL |
| 厂家： | 
Infineon |
| 描述： | HEXFET® Power MOSFET |
| 文件： | 总14页 (文件大小：314K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97486A
AUIRF1405ZS
AUIRF1405ZL
AUTOMOTIVE GRADE
Features
HEXFET® Power MOSFET
l
l
l
l
l
Advanced Process Technology
UltraLowOn-Resistance
175°COperatingTemperature
Fast Switching
Repetitive Avalanche Allowed up to
Tjmax
D
V(BR)DSS
55V
4.9m
RDS(on) max.
ID
Ω
G
S
150A
l
l
Lead-Free,RoHSCompliant
Automotive Qualified *
D
D
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features combine
tomakethisdesignanextremelyefficientandreliable
device for use in Automotive applications and a wide
variety of other applications.
S
D
S
D
G
G
D2Pak
AUIRF1405ZS
TO-262
AUIRF1405ZL
G
Gate
D
S
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Max.
150
110
600
230
Units
A
I
I
I
@ T = 25°C
C
D
D
@ T = 100°C
C
DM
P
@T = 25°C
Power Dissipation
C
W
D
Linear Derating Factor
1.5
± 20
W/°C
V
V
Gate-to-Source Voltage
GS
EAS
270
420
mJ
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
EAS (tested )
IAR
See Fig.12a, 12b, 15, 16
A
EAR
mJ
Repetitive Avalanche Energy
T
J
-55 to + 175
Operating Junction and
T
°C
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
300
10 lbf in (1.1N m)
Thermal Resistance
Parameter
Typ.
–––
Max.
0.65
40
Units
°C/W
RθJC
RθJA
Junction-to-Case
–––
Junction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/01/2010
AUIRF1405ZS/L
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
V
Breakdown Voltage Temp. Coefficient ––– 0.049 ––– V/°C Reference to 25°C, ID = 1mA
mΩ
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
3.7
–––
–––
–––
–––
–––
4.9
4.0
–––
20
VGS = 10V, ID = 75A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 75A
VGS(th)
V
S
gfs
IDSS
Forward Transconductance
88
Drain-to-Source Leakage Current
–––
–––
–––
–––
µA
V
DS = 55V, VGS = 0V
250
200
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA VGS = 20V
VGS = -20V
––– -200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
–––
120
180
–––
–––
–––
–––
–––
–––
–––
ID = 75A
31
nC VDS = 44V
VGS = 10V
46
18
VDD = 25V
110
48
ID = 75A
td(off)
tf
Turn-Off Delay Time
Fall Time
ns RG = 4.4Ω
VGS = 10V
82
LD
D
S
Internal Drain Inductance
4.5
Between lead,
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
Ciss
Input Capacitance
––– 4780 –––
VGS = 0V
Coss
Crss
Coss
Coss
Output Capacitance
–––
–––
770
410
–––
–––
VDS = 25V
Reverse Transfer Capacitance
Output Capacitance
pF ƒ = 1.0MHz
––– 2730 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Output Capacitance
–––
–––
600
910
–––
–––
Coss eff.
Effective Output Capacitance
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
I
Continuous Source Current
–––
–––
75
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
I
–––
–––
600
SM
S
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
30
1.3
46
45
V
T = 25°C, I = 75A, V = 0V
SD
J
S
GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 75A, VDD = 25V
J F
rr
di/dt = 100A/µs
Q
t
30
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.10mH
RG = 25Ω, IAS = 75A, VGS =10V. Part not
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
ꢀ Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
This value determined from sample failure population,
starting TJ = 25°C, L = 0.10mH, RG = 25Ω, IAS = 75A,
VGS =10V.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80%
VDSS
.
2
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AUIRF1405ZS/L
Qualification Information†
Automotive
††
(per AEC-Q101)
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
Qualification Level
TO-262
D2Pak
N/A
Moisture Sensitivity Level
MSL1
Machine Model
Class M4 (425V)
AEC-Q101-002
Class H1C (2000V)
AEC-Q101-001
Class C5 (1125V)
AEC-Q101-005
Yes
Human Body Model
ESD
Charged Device
Model
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRF1405ZS/L
1000
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
TOP
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
10
1
BOTTOM
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
Tj = 175°C
20µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
200
175
150
T
= 150°C
J
T
= 25°C
J
125
100
75
50
25
0
T
= 175°C
J
T
= 25°C
J
V
= 25V
DS
20µs PULSE WIDTH
1
4
6
8
10
12
0
25 50 75 100 125 150 175 200
V
, Gate-to-Source Voltage (V)
I ,Drain-to-Source Current (A)
D
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
4
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AUIRF1405ZS/L
100000
10000
1000
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I
= 75A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
V
= 44V
= 28V
rss
oss
gd
= C + C
DS
V
ds
gd
DS
C
iss
6.0
C
4.0
oss
C
rss
2.0
100
0.0
1
10
100
0
20
40
60
80
100
120
V
, Drain-to-Source Voltage (V)
Q
Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000.00
100.00
10.00
1.00
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100µsec
T
= 25°C
J
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
100
V
= 0V
GS
0.10
1
0.0
0.5
1.0
1.5
2.0
2.5
1
10
1000
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
nce
Forward Voltage
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5
AUIRF1405ZS/L
150
125
100
75
2.5
2.0
1.5
1.0
0.5
I
= 75A
D
V
= 10V
GS
50
25
0
25
50
75
100
125
150
175
-60 -40 -20
T
0
20 40 60 80 100 120 140 160 180
T
, Case Temperature (°C)
C
, Junction Temperature (°C)
J
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current vs.
vs.Temperature
CaseTemperature
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRF1405ZS/L
500
400
300
200
100
0
15V
I
D
TOP
31A
53A
BOTTOM 75A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
2
V0GVS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
V
G
Charge
I
= 250µA
D
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
-75 -50 -25
0
25 50 75 100 125 150 175 200
V
DS
D.U.T.
-
T , Temperature ( °C )
J
V
GS
3mA
I
I
D
G
Current Sampling Resistors
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
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7
AUIRF1405ZS/L
10000
Duty Cycle = Single Pulse
1000
Allowed avalanche Current vs
avalanche pulsewidth, tav
∆
assuming
avalanche losses
Tj = 25°C due to
100
10
1
0.01
0.05
0.10
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
300
250
200
150
100
50
TOP
Single Pulse
BOTTOM 10% Duty Cycle
= 75A
I
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
0
25
50
75
100
125
150
175
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
Starting T , Junction Temperature (°C)
J
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs.Temperature
8
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AUIRF1405ZS/L
Driver Gate Drive
P.W.
Period
Period
D =
D.U.T
P.W.
+
*
=10V
V
GS
CircuitLayoutConsiderations
• LowStrayInductance
• Ground Plane
• LowLeakageInductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
PulseWidth ≤ 1 µs
Duty Factor≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
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9
AUIRF1405ZS/L
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
PartNumber
AUIRF1405ZS
DateCode
Y= Year
WW= Work Week
A=Automotive,LeadFree
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF1405ZS/L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
PartNumber
AUIRF1405ZL
DateCode
Y= Year
WW= Work Week
A=Automotive,LeadFree
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
AUIRF1405ZS/L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
12
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AUIRF1405ZS/L
Ordering Information
Base part
Package Type
Standard Pack
Form
Complete Part Number
Quantity
50
AUIRF1405ZL
AUIRF1405ZS
TO-262
D2Pak
Tube
AUIRF1405ZL
AUIRF1405ZS
Tube
50
Tape and Reel Left
800
AUIRF1405ZSTRL
Tape and Reel Right
800
AUIRF1405ZSTRR
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13
AUIRF1405ZS/L
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its
subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and
other changes to its products and services at any time and to discontinue any product or services without
notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible
for their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without
alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduc-
tion of this information with alterations is an unfair and deceptive business practice. IR is not responsible
or liable for such altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for
that product or service voids all express and any implied warranties for the associated IR product or service
and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical
implant into the body, or in other applications intended to support or sustain life, or in any other application
in which the failure of the IR product could create a situation where personal injury or death may occur. Should
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harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
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with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless
the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part
number including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated
products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
14
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