AUIRF2804S-7P [INFINEON]
HEXFET® Power MOSFET; HEXFET㈢功率MOSFET
| 型号： | AUIRF2804S-7P |
| 厂家： | 
Infineon |
| 描述： | HEXFET® Power MOSFET |
| 文件： | 总13页 (文件大小：287K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97459
AUTOMOTIVE GRADE
AUIRF2804S-7P
HEXFET® Power MOSFET
Features
Advanced Process Technology
D
V(BR)DSS
40V
1.6m
UltraLowOn-Resistance
175°COperatingTemperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free,RoHSCompliant
Automotive Qualified *
RDS(on) max.
Ω
G
ID (Silicon Limited)
ID (Package Limited)
320A
240A
S
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest process-
ing techniques to achieve extremely low on-resistance
per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating .
These features combine to make this design an ex-
tremely efficient and reliable device for use in Automo-
tive applications and a wide variety of other applica-
tions.
D
S
D
S
S
S
S
G
G
Gate
D
S
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Absolute Maximum Ratings
Parameter
Max.
320
Units
A
I
I
I
I
@ TC = 25°C
@ TC = 100°C
@ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
D
D
D
230
240
1360
330
Pulsed Drain Current
DM
P
@TC = 25°C
Maximum Power Dissipation
W
D
Linear Derating Factor
Gate-to-Source Voltage
2.2
± 20
W/°C
V
V
GS
EAS
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
630
1050
mJ
EAS (tested)
Avalanche Current
IAR
See Fig.12a,12b,15,16
A
Repetitive Avalanche Energy
EAR
mJ
°C
T
J
Operating Junction and
-55 to + 175
300
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
Typ.
–––
Max.
0.50
–––
62
Units
°C/W
Junction-to-Case
Rθ
JC
Rθ
CS
Rθ
JA
Rθ
JA
Case-to-Sink, Flat, Greased Surface
0.50
–––
Junction-to-Ambient
–––
40
Junction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
02/19/2010
AUIRF2804S-7P
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
40 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
∆Β
V
∆
VDSS/ TJ
Breakdown Voltage Temp. Coefficient ––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) SMD
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
V
GS = 10V, ID = 160A
1.2
–––
–––
–––
–––
–––
1.6
4.0
–––
20
mΩ
V
VDS = VGS, ID = 250µA
gfs
IDSS
220
–––
–––
–––
–––
S
V
V
V
DS = 10V, ID = 160A
Forward Transconductance
Drain-to-Source Leakage Current
µA
DS = 40V, VGS = 0V
250
200
DS = 40V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA VGS = 20V
VGS = -20V
––– -200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
td(on)
tr
–––
–––
–––
–––
–––
–––
–––
–––
170
260
–––
–––
–––
–––
–––
–––
–––
nC ID = 160A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
63
V
V
V
DS = 32V
GS = 10V
DD = 20V
71
17
ns
150
110
100
4.5
ID = 160A
td(off)
tf
Ω
G = 2.6
Turn-Off Delay Time
Fall Time
R
VGS = 10V
LD
D
S
Internal Drain Inductance
nH Between lead,
6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
pF VGS = 0V
Ciss
Input Capacitance
––– 6930 –––
––– 1750 –––
Coss
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
Output Capacitance
–––
970
–––
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
––– 5740 –––
––– 1570 –––
––– 2340 –––
Coss
Output Capacitance
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Coss eff.
Effective Output Capacitance
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
Continuous Source Current
–––
–––
320
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
ISM
–––
––– 1360
S
(Body Diode)
p-n junction diode.
VSD
T = 25°C, I = 160A, V = 0V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
1.3
V
J
S
GS
trr
Qrr
T = 25°C, I = 160A, VDD = 20V
J F
di/dt = 100A/µs
–––
–––
43
48
65
72
ns
nC
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C,
L=0.049mH, RG = 25Ω, IAS = 160A, VGS =10V.
Part not recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
ꢀ Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value is determined from sample failure population,
starting TJ = 25°C, L=0.049mH, RG = 25Ω, IAS = 160A, VGS =10V.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to
R is measured at TJ of approximately 90°C.
θ
80% VDSS
.
2
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AUIRF2804S-7P
Qualification Information†
Automotive
††
(per AEC-Q101)
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
Qualification Level
D2Pak 7 Pin
MSL1
Moisture Sensitivity Level
Machine Model
Class M4
AEC-Q101-002
Class H3A
AEC-Q101-001
Class C5
Human Body Model
ESD
Charged Device
Model
AEC-Q101-005
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
www.irf.com
3
AUIRF2804S-7P
10000
VGS
10000
1000
100
VGS
15V
TOP
15V
10V
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
100
10
BOTTOM
BOTTOM
4.5V
60µs PULSE WIDTH
Tj = 25°C
≤
60µs PULSE WIDTH
Tj = 175°C
4.5V
≤
10
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.0
240
T
= 25°C
J
200
160
120
80
100.0
10.0
1.0
T
= 175°C
J
T
= 175°C
J
T
= 25°C
J
V
= 20V
DS
≤ 60µs PULSE WIDTH
40
V
= 10V
DS
380µs PULSE WIDTH
0.1
0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0
20
40
60
80
100 120 140
V
, Gate-to-Source Voltage (V)
GS
I
Drain-to-Source Current (A)
D,
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
4
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AUIRF2804S-7P
14000
12000
10000
8000
6000
4000
2000
0
20
16
12
8
V
C
= 0V,
f = 1 MHZ
GS
I = 160A
D
V
= 32V
= C + C , C SHORTED
DS
VDS= 20V
iss
gs
gd ds
C
= C
rss
gd
C
= C + C
ds
oss
gd
Ciss
Coss
Crss
4
0
0
50
100
150
200
250
300
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.0
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100.0
10.0
1.0
100µsec
1msec
T
J
= 25°C
1
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
DC
V
= 0V
GS
0.1
0.1
0.0
0.4
V
0.8
1.2
1.6
2.0
2.4
0
1
10
100
1000
V
, Drain-toSource Voltage (V)
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ance
Forward Voltage
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5
AUIRF2804S-7P
2.0
1.5
1.0
0.5
350
I
= 160A
= 10V
D
V
300
250
200
150
100
50
Limited By Package
GS
0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
, Junction Temperature (°C)
J
25
50
75
100
125
150
175
T
T
, Case Temperature (°C)
C
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current vs.
vs. Temperature
Case Temperature
1
D = 0.50
0.1
0.20
0.10
R1
R1
R2
R2
0.05
Ri (°C/W) τi (sec)
τ
0.01
J τJ
τ
0.1951
0.000743
0.02
0.01
τ
Cτ
1 τ1
Ci= τi/Ri
τ
2τ2
0.3050
0.008219
0.001
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRF2804S-7P
2500
2000
1500
1000
500
15V
I
D
TOP
21A
33A
BOTTOM 160A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
20V
GS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
0
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
Fig 12c. Maximum Avalanche Energy
I
vs. Drain Current
AS
Fig 12b. Unclamped Inductive Waveforms
Q
G
10 V
Q
Q
GD
GS
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
V
G
Charge
Fig 13a. Basic Gate Charge Waveform
I
I
I
= 1.0A
D
D
D
= 1.0mA
= 250µA
L
VCC
DUT
-75 -50 -25
0
25 50 75 100 125 150 175
0
1K
T , Temperature ( °C )
J
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
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7
AUIRF2804S-7P
10000
Duty Cycle = Single Pulse
1000
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
100
0.05
0.10
10
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
800
TOP
BOTTOM 1% Duty Cycle
= 160A
Single Pulse
I
D
600
400
200
0
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs. Temperature
8
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AUIRF2804S-7P
Driver Gate Drive
P.W.
Period
Period
D =
D.U.T
P.W.
+
*
=10V
V
GS
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
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9
AUIRF2804S-7P
D2Pak - 7 Pin Package Outline
Dimensions are shown in millimeters (inches)
D2Pak - 7 Pin Part Marking Information
PartNumber
AUF2804S-7P
DateCode
Y= Year
WW= Work Week
A=Automotive,LeadFree
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF2804S-7P
D2Pak - 7 Pin Tape and Reel
IRF2804STRL-7P
IRF2804STRL-7P
IRF2804STRL-7P
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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11
AUIRF2804S-7P
Ordering Information
Base part
Package Type
Standard Pack
Form
Complete Part Number
Quantity
AUIRF2804S-7P D2Pak 7 Pin
Tube
75
AUIRF2804S-7P
12
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AUIRF2804S-7P
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its
subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and
other changes to its products and services at any time and to discontinue any product or services without
notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IRs terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IRs standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible
for their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
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duction of this information with alterations is an unfair and deceptive business practice. IR is not responsible
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that product or service voids all express and any implied warranties for the associated IR product or service
and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
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surgical implant into the body, or in other applications intended to support or sustain life, or in any other
application in which the failure of the IR product could create a situation where personal injury or death may
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products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
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WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
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13
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