AUIRF3710Z [INFINEON]
HEXFET® Power MOSFET; HEXFET®功率MOSFET
| 型号： | AUIRF3710Z |
| 厂家： | 
Infineon |
| 描述： | HEXFET® Power MOSFET |
| 文件： | 总14页 (文件大小：359K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97470
AUIRF3710Z
AUIRF3710ZS
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
O
O
O
O
O
Low On-Resistance
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
VDSS = 100V
RDS(on) = 18mΩ
O
O
G
ID = 59A
Description
S
SpecificallydesignedforAutomotiveapplications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
turesofthisdesign area175°Cjunctionoperating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
D2Pak
AUIRF3710ZS
TO-220AB
AUIRF3710Z
Absolute Maximum Ratings
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice. Thesearestressratingsonly;
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure
to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation
ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Continuous Drain Current, VGS @ 10V
Max.
59
Units
A
I
I
I
@ TC = 25°C
D
@ TC = 100°C Continuous Drain Current, VGS @ 10V
42
D
240
160
Pulsed Drain Current
DM
P
@TC = 25°C
Maximum Power Dissipation
W
D
Linear Derating Factor
Gate-to-Source Voltage
1.1
± 20
W/°C
V
V
GS
Single Pulse Avalanche Energy (Thermally limited)
EAS
170
200
mJ
Single Pulse Avalanche Energy Tested Value
Avalanche Current
EAS (tested)
IAR
See Fig.12a,12b,15,16
A
EAR
Repetitive Avalanche Energy
Operating Junction and
mJ
°C
T
J
-55 to + 175
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Typ.
–––
Max.
0.92
–––
40
Units
°C/W
Junction-to-Case
RθJC
RθCS
RθJA
Case-to-Sink, Flat, Greased Surface
0.50
–––
Junction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
3/19/10
AUIRF3710Z/S
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ΔΒ
RDS(on)
VGS(th)
gfs
Drain-to-Source Breakdown Voltage
100
–––
0.10
14
–––
V
VGS = 0V, ID = 250μA
Δ
VDSS/ TJ
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– V/°C Reference to 25°C, ID = 1mA
18
4.0
–––
20
250
200
-200
–––
2.0
35
VGS = 10V, ID = 35A
VDS = VGS, ID = 250μA
VDS = 50V, ID = 35A
Ω
m
–––
–––
–––
–––
–––
–––
V
S
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
μA
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
–––
–––
–––
–––
–––
–––
–––
–––
82
19
27
17
77
41
56
4.5
120
28
nC ID = 35A
VDS = 80V
VGS = 10V
VDD = 50V
40
–––
–––
–––
–––
–––
ns
ID = 35A
G = 6.8Ω
GS = 10V
R
V
D
S
nH Between lead,
6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
GS = 0V
DS = 25V
ƒ = 1.0MHz, See Fig. 5
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
––– 2900 –––
pF
V
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
–––
–––
290
150
–––
–––
V
––– 1130 –––
V
V
GS = 0V, VDS = 1.0V, ƒ = 1.0MHz
GS = 0V, VDS = 80V, ƒ = 1.0MHz
Output Capacitance
–––
–––
170
280
–––
–––
Coss eff.
Effective Output Capacitance
VGS = 0V, VDS = 0V to 80V
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
Continuous Source Current
–––
–––
59
(Body Diode)
A
G
ISM
Pulsed Source Current
–––
–––
240
integral reverse
(Body Diode)
p-n junction diode.
VSD
trr
T = 25°C, I = 35A, V = 0V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
50
100
1.3
75
160
V
J
S
GS
T = 25°C, I = 35A, VDD = 25V
ns
J
F
Qrr
ton
nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.27mH,
RG = 25Ω, IAS = 35A, VGS =10V. Part not
recommended for use above this value.
.
This value determined from sample failure population,
starting TJ = 25°C, L = 0.27mH,RG = 25Ω, IAS = 35A, VGS =10V
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
ISD ≤ 35A, di/dt ≤ 380A/μs, VDD ≤ V(BR)DSS
TJ ≤ 175°C.
,
Rθ is measured at TJ approximately 90°C.
This is only applied to TO-220AB pakcage.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
2
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AUIRF3710Z/S
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments:
This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level is
granted by extension of the higher Automotive level.
Moisture Sensitivity Level
TO-220AB
D2 PAK
N/A
MSL1
Machine Model
Class M4
AEC-Q101-002
Class H1C
AEC-Q101-001
Class C3
Human Body Model
ESD
Charged Device Model
AEC-Q101-005
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRF3710Z/S
1000
100
10
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
100
10
BOTTOM
BOTTOM
1
4.5V
4.5V
0.1
0.01
20μs PULSE WIDTH
Tj = 175°C
20μs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
120
100
T = 25°C
J
T
= 175°C
100
10
1
J
80
T
= 175°C
J
60
40
20
0
T
= 25°C
V
J
= 25V
VDS = 15V
20μs PULSE WIDTH
DS
20μs PULSE WIDTH
0
2
4
6
8
10
0
10
20
30
40
50
60
70
V
, Gate-to-Source Voltage (V)
GS
I , Drain-to-Source Current (A)
D
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
4
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AUIRF3710Z/S
100000
10000
1000
100
12.0
10.0
8.0
= 0V,
f = 1 MHZ
V
C
GS
iss
I = 35A
D
= C + C
,
C
SHORTED
gs
gd
ds
V
V
V
= 80V
DS
C
C
= C
gd
rss
= 50V
DS
= C + C
oss
ds
gd
= 20V
DS
Ciss
6.0
Coss
4.0
Crss
2.0
10
0.0
1
10
, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
V
DS
Q
Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.00
100.00
10.00
1.00
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T = 175°C
J
100μsec
T = 25°C
J
1msec
1
Tc = 25°C
10msec
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.10
1
10
100
1000
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
, Drain-toSource Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
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5
AUIRF3710Z/S
60
50
40
30
20
10
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
= 59A
D
V
= 10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
25
50
75
100
125
150
175
T
, Case Temperature (°C)
T , Junction Temperature (°C)
C
J
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current vs.
vs. Temperature
Case Temperature
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRF3710Z/S
15V
300
250
200
150
100
50
I
D
TOP
15A
25A
DRIVER
+
L
V
DS
BOTTOM 35A
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
0
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
5.0
V
G
4.0
3.0
2.0
1.0
Charge
Fig 13a. Basic Gate Charge Waveform
I
= 250μA
D
Current Regulator
Same Type as D.U.T.
50KΩ
.2μF
12V
.3μF
+
V
DS
D.U.T.
-
-75 -50 -25
0
25 50 75 100 125 150 175 200
V
GS
T , Temperature ( °C )
J
3mA
I
I
D
G
Current Sampling Resistors
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
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7
AUIRF3710Z/S
1000
Duty Cycle = Single Pulse
100
10
1
Allowed avalanche Current vs
avalanche pulsewidth, tav
0.01
assuming
Tj = 25°C due to
Δ
avalanche losses
0.05
0.10
0.1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
tav (sec)
1.0E-04
1.0E-03
1.0E-02
1.0E-01
Fig 15. Typical Avalanche Current vs.Pulsewidth
200
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
TOP
BOTTOM 10% Duty Cycle
= 35A
Single Pulse
I
D
150
100
50
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
0
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs. Temperature
8
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AUIRF3710Z/S
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
-
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
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9
AUIRF3710Z/S
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRF3710Z
Date Code
Y= Year
WW= Work Week
A= Automotive, Leadfree
IR Logo
YWWA
XX or XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF3710Z/S
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
Part Number
AUIRF3710ZS
Date Code
Y= Year
WW= Work Week
A= Automotive, Leadfree
IR Logo
YWWA
XX or XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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11
AUIRF3710Z/S
D2Pak Tape & Reel Infomation
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
11.60 (.457)
11.40 (.449)
FEED DIRECTION
TRL
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
12
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AUIRF3710Z/S
Ordering Information
Base part number Package Type
Standard Pack
Form
Complete Part Number
Quantity
AUIRF3710Z
AUIRF3710ZS
AUIRF3710ZS
AUIRF3710ZS
TO-220
D2Pak
Tube
Tube
50
50
800
800
AUIRF3710ZS
AUIRF3710ZS
AUIRF3710ZSTRL
AUIRF3710ZSTRR
Tape and Reel Left
Tape and Reel Right
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13
AUIRF3710Z/S
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries
(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to
its products and services at any time and to discontinue any product or services without notice. Part numbers
designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and
conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR
deems necessary to support this warranty. Except where mandated by government requirements, testing of all
parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for
their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without
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IR products are not designed, intended, or authorized for use as components in systems intended for surgical
implantintothebody,orinotherapplicationsintendedtosupportorsustainlife,orinanyotherapplicationinwhich
the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer
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in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
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Tel: (310) 252-7105
14
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INFINEON
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