AUIRF3805 [INFINEON]
HEXFET? Power MOSFET; HEXFET㈢功率MOSFET
| 型号： | AUIRF3805 |
| 厂家： | 
Infineon |
| 描述： | HEXFET? Power MOSFET |
| 文件： | 总15页 (文件大小：384K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96319
AUTOMOTIVE GRADE
AUIRF3805
AUIRF3805S
AUIRF3805L
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
Advanced Process Technology
V(BR)DSS
55V
D
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
RDS(on) typ.
2.6m
Ω
max.
ID (Silicon Limited)
ID (Package Limited)
3.3mΩ
210A
G
S
160A
D
D
D
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
variety of other applications.
S
D
S
S
D
G
D
G
G
D2Pak
AUIRF3805S
TO-262
TO-220AB
AUIRF3805
AUIRF3805L
G
D
S
AbsoluteMaximumRatings
Gate
Drain
Source
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Max.
210
150
160
Units
(Silicon Limited)
(Silicon Limited)
(Package limited)
I
I
I
I
@ T = 25°C
C
D
D
D
@ T = 100°C
C
A
@ T = 25°C
C
890
DM
300
2.0
± 20
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
W
W/°C
V
P
@T = 25°C
D
C
V
GS
EAS
EAS (Tested )
IAR
650
940
Single Pulse Avalanche Energy (Thermally limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
mJ
See Fig.12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energy
mJ
-55 to + 175
T
T
Operating Junction and
Storage Temperature Range
J
°C
STG
300
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
10 lbf in (1.1N m)
Thermal Resistance
Parameter
Typ.
–––
0.50
–––
Max.
0.5
–––
62
Units
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
°C/W
Junction-to-Ambient (PCB Mount)
–––
40
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/20/10
AUIRF3805/S/L
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
V
∆ ∆
V(BR)DSS/ TJ
Breakdown Voltage Temp. Coefficient ––– 0.051 ––– V/°C Reference to 25°C, ID = 1mA
Ω
m
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
2.6
–––
–––
–––
–––
–––
3.3
4.0
–––
20
V
V
GS = 10V, ID = 75A
**
V
DS = VGS, ID = 250µA
gfs
IDSS
Forward Transconductance
75
V
VDS = 25V, ID = 75A **
VDS = 55V, VGS = 0V
Drain-to-Source Leakage Current
–––
–––
–––
–––
µA
250
200
V
DS = 55V, VGS = 0V, TJ = 125°C
VGS = 20V
GS = -20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
––– -200
V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
190
290
–––
–––
–––
–––
–––
–––
ID = 75A **
52
V
DS = 44V
nC
72
VGS = 10V
VDD = 28V
ID = 75A**
150
20
ns
td(off)
tf
Ω
RG = 2.6
VGS = 10V
Turn-Off Delay Time
Fall Time
93
87
D
S
LD
Internal Drain Inductance
Between lead,
–––
–––
4.5
7.5
–––
–––
6mm (0.25in.)
from package
nH
pF
G
LS
Internal Source Inductance
and center of die contact
VGS = 0V
Ciss
Input Capacitance
––– 7960 –––
––– 1260 –––
Coss
Crss
Coss
Coss
Output Capacitance
V
DS = 25V
Reverse Transfer Capacitance
Output Capacitance
–––
––– 4400 –––
––– 980 –––
––– 1550 –––
630
–––
ƒ = 1.0MHz
V
V
V
GS = 0V, VDS = 1.0V, ƒ = 1.0MHz
GS = 0V, VDS = 44V, ƒ = 1.0MHz
GS = 0V, VDS = 0V to 44V
Output Capacitance
Coss eff.
Effective Output Capacitance
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
Continuous Source Current
MOSFET symbol
S
–––
––– 210
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
I
SM
–––
–––
890
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
36
1.3
54
71
V
T = 25°C, I = 75A** , V = 0V
SD
J
S
GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 75A** , VDD = 28V
J F
rr
di/dt = 100A/µs
Q
t
47
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Note through ,,∗∗ are on page 3
2
www.irf.com
AUIRF3805/S/L
Qualification Information†
Automotive
††
(per AEC-Q101)
Comments:
This
part
number(s)
passed
Qualification Level
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
3L-D2 PAK
MSL1 , 260°C
Moisture Sensitivity Level
3L-TO-262
3L-TO-220
N/A
Class M4(+/-425V)
Machine Model
(per AEC-Q101-002)
Class H3A(+/-4000V)
(per AEC-Q101-001)
Class C5 (+/-1000V)
(per AEC-Q101-005)
Yes
ESD
Human Body Model
Charged Device Model
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Notes:
Calculated continuous current based on maximum
allowable junction temperature. Bond wire current
limit is 160A. Note that current limitations arising from
heating of the device leads may occur with some lead
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalancheperformance.
This is only applied to TO-220AB pakcage.
This is applied to D2Pak, when mounted on 1" square PCB
(FR- 4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
Rθ is measured at TJ of approximately 90°C.
TO-220 device will have an Rth of 0.45°C/W.
mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature. (See fig. 11).
This value determined from sample failure population ,
starting TJ = 25°C, L = 0.23mH RG = 25Ω, IAS = 75A,
V
GS =10V.
** All AC and DC test condition based on former Package limitated
ꢀ
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same
current of 75A.
charging time as Coss while VDS is rising from 0 to
80% VDSS
.
www.irf.com
3
AUIRF3805/S/L
1000
100
10
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
100
BOTTOM
BOTTOM
4.5V
10
4.5V
1
60µs PULSE WIDTH
≤
60µs PULSE WIDTH
≤
Tj = 25°C
Tj = 175°C
1
0.1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.0
100.0
10.0
1.0
200
T
= 25°C
J
T
= 175°C
J
160
120
80
T
= 175°C
J
T
= 25°C
J
40
V
= 20V
DS
≤ 60µs PULSE WIDTH
V
= 10V
DS
380µs PULSE WIDTH
0.1
0
4.0
5.0
6.0
7.0
8.0
0
20 40 60 80 100 120 140 160 180
Drain-to-Source Current (A)
V
, Gate-to-Source Voltage (V)
GS
I
D,
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. DrainCurrent
4
www.irf.com
AUIRF3805/S/L
14000
12000
10000
8000
6000
4000
2000
0
20
16
12
8
V
C
= 0V,
f = 1 MHZ
GS
I = 75A
D
V
= 44V
= C + C , C SHORTED
DS
VDS= 28V
iss
gs
gd ds
C
C
= C
rss
oss
gd
= C + C
ds
gd
Ciss
4
Coss
Crss
0
0
50
100
150
200
250
300
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
10000
1000
100
10
1000.0
100.0
10.0
1.0
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100µsec
10msec
1msec
T
J
= 25°C
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
1
10
100
1000
0.0
0.4
V
0.8
1.2
1.6
2.0
2.4
V
, Drain-toSource Voltage (V)
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
5
AUIRF3805/S/L
240
2.0
1.5
1.0
0.5
I
= 75A
LIMITED BY PACKAGE
D
V
= 10V
GS
200
160
120
80
40
0
25
50
75
100
125
150
175
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
T
, Case Temperature (°C)
C
T
, Junction Temperature (°C)
J
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current Vs.
Vs. Temperature
Case Temperature
1
D = 0.50
0.1
0.20
0.10
0.05
R1
R2
R2
R1
Ri (°C/W) τi (sec)
0.02
0.01
0.01
0.001
τ
J τJ
τ
0.2653
0.001016
τ
Cτ
τ
1 τ1
2τ2
0.2347
0.012816
Ci= τi/Ri
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
www.irf.com
AUIRF3805/S/L
2000
1600
1200
800
400
0
15V
I
D
TOP
15A
20A
BOTTOM 75A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
2
V0GVS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
4.5
4.0
3.5
3.0
2.5
2.0
1.5
V
G
I
= 250µA
D
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
-75 -50 -25
0
J
25 50 75 100 125 150 175
, Temperature ( °C )
V
GS
3mA
T
I
I
D
G
Current Sampling Resistors
Fig 14. Threshold Voltage Vs. Temperature
Fig 13b. Gate Charge Test Circuit
www.irf.com
7
AUIRF3805/S/L
10000
Duty Cycle = Single Pulse
1000
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
100
0.05
0.10
10
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 15, 16:
800
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
TOP
BOTTOM 1% Duty Cycle
= 75A
Single Pulse
I
D
600
400
200
0
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
25
50
75
100
125
150
175
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
Vs. Temperature
8
www.irf.com
AUIRF3805/S/L
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
www.irf.com
9
AUIRF3805/S/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
PartNumber
AUIRF3805
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com
AUIRF3805/S/L
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
PartNumber
AUIRF3805S
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
AUIRF3805/S/L
TO-262 Package Outline ( Dimensions are shown in millimeters (inches))
TO-262 Part Marking Information
PartNumber
AUIRF3805L
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
www.irf.com
AUIRF3805/S/L
D2Pak Tape & Reel Infomation
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
15.42 (.609)
15.22 (.601)
23.90 (.941)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
www.irf.com
13
AUIRF3805/S/L
Ordering Information
Base part
Package Type
Standard Pack
Form
Complete Part Number
Quantity
50
AUIRF3805
AUIRF3805L
AUIRF3805S
TO-220
TO-262
D2Pak
Tube
Tube
Tube
AUIRF3805
AUIRF3805L
AUIRF3805S
50
50
Tape and Reel Left
Tape and Reel Right
800
800
AUIRF3805STRL
AUIRF3805STRR
14
www.irf.com
AUIRF3805/S/L
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is
accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations
is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third
parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or
service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive
business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the
body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product
could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such
unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized
use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products
are specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as military-grade
meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated
as military-grade is solely at the Buyer’s risk, and that they are solely responsible for compliance with all legal and regulatory
requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products
are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”.
Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
www.irf.com
15
相关型号：
AUIRF3805S-7TRL
Power Field-Effect Transistor, 160A I(D), 55V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, D2PAK-7/6
INFINEON
AUIRF3808
Power Field-Effect Transistor, 140A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3
INFINEON
©2020 ICPDF网 联系我们和版权申明