AUIRF7734M2TR_15 [INFINEON]
Automotive DirectFET Power MOSFET;型号: | AUIRF7734M2TR_15 |
厂家: | Infineon |
描述: | Automotive DirectFET Power MOSFET |
文件: | 总11页 (文件大小:438K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AUTOMOTIVE GRADE
AUIRF7734M2TR
Automotive DirectFET® Power MOSFET
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
V(BR)DSS
RDS(on) typ.
max.
ID (Silicon Limited)
Qg (typical)
40V
3.8m
4.9m
72A
48nC
S
Automotive Qualified *
D
D
S
G
DirectFET® ISOMETRIC
Applicable DirectFET® Outline and Substrate Outline
M2
SB
SC
M2
M4
L4
L6
L8
Description
The AUIRF7734M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging
technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET®
package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging
platform coupled with the latest silicon technology allows the AUIRF7734M2 to offer substantial system level savings and performance improvement
specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction
temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for
high current automotive applications.
Standard Pack
Base Part Number
Package Type
Orderable Part Number
Form
Quantity
AUIRF7734M2
DirectFET Medium Can
AUIRF7734M2TR
Tape and Reel
4800
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
40
±20
72
51
17
288
46
2.5
56
Units
VDS
VGS
Drain-to-Source Voltage
Gate-to-Source Voltage
V
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (Tested)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current
A
Power Dissipation
Power Dissipation
W
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy
Avalanche Current
mJ
164
A
mJ
IAR
See Fig. 16, 17, 18a, 18b
EAR
TP
Repetitive Avalanche Energy
Peak Soldering Temperature
270
°C
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-10-5
AUIRF7734M2TR
Thermal Resistance
Symbol
RJA
Parameter
Typ.
–––
12.5
20
Max.
60
Units
°C/W
W/°C
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
–––
–––
3.3
RJA
RJA
–––
1.0
RJ-Can
RJ-PCB
Junction-to-PCB Mounted
–––
Linear Derating Factor
0.30
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Min. Typ. Max. Units
40 ––– –––
––– 0.03 ––– V/°C Reference to 25°C, ID = 1.0mA
Conditions
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
V
VGS = 0V, ID = 250µA
V(BR)DSS/TJ
RDS(on)
VGS(th)
–––
2.0
3.8
3.0
4.9
4.0
V
GS = 10V, ID = 43A
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
m
V
V
DS = VGS, ID = 100µA
DS = 10V, ID = 43A
Gate Threshold Voltage Coefficient
Forward Transconductance
Internal Gate Resistance
––– -9.3
––– mV/°C
VGS(th)/TJ
gfs
74
–––
1.0
–––
–––
5.0
S
V
RG
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 40V, VGS = 0V
DS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
250
100
V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– -100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
Total Gate Charge
Conditions
Qg
Qgs1
–––
–––
–––
–––
–––
48
6.9
4.1
16
72
VDS = 20V
GS = 10V
ID = 43A
V
Gate-to-Source Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
–––
–––
–––
–––
Qgs2
Qgd
nC
Qgodr
21
Qsw
––– 20.1 –––
Qoss
td(on)
tr
–––
–––
–––
–––
–––
21
13
49
42
45
–––
–––
–––
–––
–––
VDS = 16V, VGS = 0V
VDD = 20V, VGS = 10V
ID = 43A
nC
ns
Turn-On Delay Time
Rise Time
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.8
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
––– 2545 –––
VGS = 0V
VDS = 25V
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
587
324
–––
–––
ƒ = 1.0 MHz
pF
––– 2174 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0 MHz
VGS = 0V, VDS = 32V, ƒ = 1.0 MHz
VGS = 0V, VDS = 0V to 32V
–––
–––
525
806
–––
–––
C
oss eff.
Notes through are on page 3
2
2015-10-5
AUIRF7734M2TR
Diode Characteristics
Symbol Parameter
Min. Typ. Max. Units
Conditions
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
integral reverse
D
IS
–––
–––
–––
–––
72
A
G
Pulsed Source Current
(Body Diode)
ISM
288
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
38
1.3
57
39
V
TJ = 25°C, IS = 43A, VGS = 0V
TJ = 25°C, IF = 43A, VDD = 25V
dv/dt = 100A/µs
ns
nC
26
Qrr
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air).
Mounted to a PCB with
small clip heatsink (still air)
Surface mounted on 1 in.
square Cu board (still air).
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET® Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.06mH, RG = 50, IAS = 43A, VGS = 20V.
Pulse width 400µs; duty cycle 2%.
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized back and with small clip heat sink.
R is measured at TJ of approximately 90°C.
3
2015-10-5
AUIRF7734M2TR
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
6.0V
5.0V
4.5V
4.0V
3.5V
VGS
15V
10V
8.0V
6.0V
5.0V
4.5V
4.0V
3.5V
TOP
TOP
BOTTOM
BOTTOM
1
3.5V
60µs
0.1
0.01
3.5V
60µs
PULSE WIDTH
Tj = 25°C
PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig. 1 Typical Output Characteristics
Fig. 2 Typical Output Characteristics
7.0
6.0
5.0
4.0
3.0
2.0
12
I
= 43A
T
= 125°C
D
J
10
8
T
= 125°C
J
6
4
T
= 25°C
J
Vgs = 10V
150
T
= 25°C
J
2
4
6
8
10
12
14 16
18
20
0
50
100
, Drain Current (A)
200
I
D
V
Gate -to -Source Voltage (V)
GS,
Fig. 4 Typical On-Resistance vs. Drain Current
Fig. 3 Typical On-Resistance vs. Gate Voltage
1000
2.0
I
= 43A
D
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 10V
GS
100
T
= -40°C
10
1
J
TJ = 25°C
TJ = 175°C
V
= 25V
DS
60µs PULSE WIDTH
0.1
2
3
4
5
6
7
8
9
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
V
, Gate-to-Source Voltage (V)
J
GS
Fig 6. Normalized On-Resistance vs. Temperature
2015-10-5
Fig 5. Transfer Characteristics
4
AUIRF7734M2TR
1000
100
10
4.0
3.5
3.0
2.5
2.0
1.5
1.0
T
= -40°C
J
TJ = 25°C
TJ = 175°C
I
= 1.0A
D
ID = 1.0mA
ID = 250µA
ID = 100µA
1
V
= 0V
1.2
GS
0.1
0.2
0.4
V
0.6
0.8
1.0
-75 -50 -25
T
0
25 50 75 100 125 150 175
, Source-to-Drain Voltage (V)
, Temperature ( °C )
SD
J
Fig 8. Typical Source-Drain Diode Forward Voltage
Fig. 7 Typical Threshold Voltage vs.
Junction Temperature
100000
150
100
50
V
= 0V,
= C
f = 1 MHZ
GS
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
rss
oss
gd
T
= 25°C
J
= C + C
ds
gd
10000
1000
100
C
C
iss
T
= 175°C
J
oss
C
rss
V
= 5V
DS
380µs PULSE WIDTH
0
1
10
100
0
20
40
60
80
100
120
V
, Drain-to-Source Voltage (V)
I
,Drain-to-Source Current (A)
DS
D
Fig 10. Typical Capacitance vs. Drain-to-Source Voltage
Fig 9. Typical Forward Trans conductance vs. Drain Current
14
75
I
= 43A
D
V
V
= 32V
= 20V
DS
DS
12
10
8
60
45
30
15
0
VDS= 8V
6
4
2
0
0
15
30
45
60
75
25
50
75
100
125
150
175
Q , Total Gate Charge (nC)
G
T
, Case Temperature (°C)
C
Fig 12. Maximum Drain Current vs. Case Temperature
Fig 11. Typical Gate Charge vs.
Gate-to-Source Voltage
5
2015-10-5
AUIRF7734M2TR
250
200
150
100
50
1000
100
10
OPERATION IN THIS AREA
LIMITED BY RDS(on)
I
D
TOP
8.8A
23A
BOTTOM 43A
100µsec
1msec
10msec
1
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0
0.1
25
50
75
100
125
150
175
0.10
1
10
100
Starting T , Junction Temperature (°C)
V
, Drain-to-Source Voltage (V)
J
DS
Fig 14. Maximum Avalanche Energy vs. Temperature
Fig 13. Maximum Safe Operating Area
10
D = 0.50
1
0.20
0.10
0.02
Ri (°C/W)
1.38106
i (sec)
0.007407
0.1
0.01
0.01
0.05
1.31203
0.10457
0.50139
0.039921
0.000021
0.000741
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
Duty Cycle = Single Pulse
100
10
1
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 16. Typical Avalanche Current vs. Pulse Width
6
2015-10-5
AUIRF7734M2TR
60
50
40
30
20
10
0
Notes on Repetitive Avalanche Curves , Figures 16, 17:
TOP
BOTTOM 1.0% Duty Cycle
= 43A
Single Pulse
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
I
D
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 16, 17).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 15)
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
P
D (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
Fig 17. Maximum Avalanche Energy vs. Temperature
E
AS (AR) = PD (ave)·tav
Fig 18b. Unclamped Inductive Waveforms
Fig 18a. Unclamped Inductive Test Circuit
VDD
Fig 19a. Gate Charge Test Circuit
Fig 19b. Gate Charge Waveform
Fig 20a. Switching Time Test Circuit
Fig 20b. Switching Time Waveforms
7
2015-10-5
AUIRF7734M2TR
DirectFET® Board Footprint, M2 (Medium Size Can).
Please see DirectFET® application note AN-1035 for all details regarding the assembly of DirectFET® .
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
S
S
G
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
2015-10-5
AUIRF7734M2TR
DirectFET® Outline Dimension, M2 Outline (Medium Size Can).
Please see DirectFET® application note AN-1035 for all details regarding the assembly of DirectFET® . This includes
all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC
IMPERIAL
CODE MIN MAX
MIN
MAX
0.250
0.199
0.156
0.018
0.024
0.032
0.032
0.032
N/A
A
B
C
D
E
F
G
H
I
6.25
4.80
3.85
0.35
0.58
0.78
6.35
5.05
3.95
0.45
0.62
0.82
0.246
0.189
0.152
0.014
0.023
0.031
0.78 0.82 0.031
0.78 0.82
N/A N/A
0.38 0.42
0.031
N/A
J
0.015
0.043
0.090
0.027
0.003
0.001
0.017
0.047
0.094
0.029
0.007
0.003
K
L
1.10
2.30
0.68
0.09
0.02
1.20
2.40
0.74
0.17
0.08
M
P
R
DirectFET® Part Marking
"AU" = GATE AND
AUTOMOTIVE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
2015-10-5
AUIRF7734M2TR
DirectFET® Tape & Reel Dimension (Showing component orientation)
LOADED TAPE FEED DIRECTION
F
D
B
A
H
G
H
E
G
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts, ordered as AUIRF7734M2TR.
REEL DIMENSIONS
DIMENSIONS
METRIC
MIN
STANDARD OPTION (QTY 4800)
IMPERIAL
METRIC
MAX
IMPERIAL
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
MIN
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
CODE
MIN
MAX
N.C
MIN
A
B
C
D
E
F
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
A
B
C
D
E
F
12.992
0.795
0.504
0.059
3.937
N.C
330.0
20.2
12.8
1.5
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
N.C
0.520
N.C
100.0
N.C
N.C
0.724
0.567
0.606
G
H
0.488
0.469
12.4
11.9
G
H
1.60
0.063
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
2015-10-5
AUIRF7734M2TR
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
DFET2 Medium Can
MSL1, 260°C
Moisture Sensitivity Level
Class M3 (+/- 400V)†
AEC-Q101-002
Machine Model
Class H1B (+/- 1000V)†
AEC-Q101-001
N/A
Human Body Model
ESD
Charged Device Model
AEC-Q101-005
Yes
RoHS Compliant
† Highest passing voltage.
Revision History
Date
Comments
Updated datasheet with corporate template
Corrected ordering table on page 1.
10/5/2015
Updated Tape and Reel option on page 10
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
11
2015-10-5
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SI9122E
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