AUIRF7739L2TR_15 [INFINEON]

Automotive DirectFET Power MOSFET;


型号：	AUIRF7739L2TR_15
厂家：	Infineon
描述：	Automotive DirectFET Power MOSFET
文件：	总11页 (文件大小：540K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AUTOMOTIVE GRADE

AUIRF7739L2TR

Automotive DirectFET^®Power MOSFET 



Advanced Process Technology

Optimized for Automotive Motor Drive, DC-DC and

other Heavy Load Applications

Exceptionally Small Footprint and Low Profile

High Power Density

Low Parasitic Parameters

Dual Sided Cooling

175°C Operating Temperature

Repetitive Avalanche Capability for Robustness and Reliability

Lead free, RoHS and Halogen free

V_(BR)DSS

R_DS(on)typ.

max.

I_{D (Silicon Limited)}

Q_{g (typical)}

40V

700µ

1000µ

270A



220nC

 Automotive Qualified *

DirectFET^®ISOMETRIC

Applicable DirectFET^®Outline and Substrate Outline 

Description

The AUIRF7739L2TR combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to

achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET package is

compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering

techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual

sided cooling to maximize thermal transfer in automotive power systems.

This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET® packaging

platform coupled with the latest silicon technology allows the AUIRF7739L2TR to offer substantial system level savings and performance improvement

specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest

processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction

temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for

high current automotive applications.

Standard Pack

Base Part Number

Package Type

Orderable Part Number

Form

Quantity

AUIRF7739L2

DirectFET Large Can

AUIRF7739L2TR

Tape and Reel

4000

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.

Parameter

Max.

±20

270

190

375

1070

125

3.8

Units

V_DS

V_GS

Drain-to-Source Voltage

Gate-to-Source Voltage

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_A= 25°C

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited) 

Continuous Drain Current, V_GS@ 10V (Silicon Limited) 

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current 

I_DM

P_D@T_C= 25°C

P_D@T_A= 25°C

Power Dissipation 

Power Dissipation 

E_AS

E_{AS (tested)}

I_AR

Single Pulse Avalanche Energy (Thermally Limited) 

Single Pulse Avalanche Energy (Tested Value) 

Avalanche Current 

270

160

See Fig. 16, 17, 18a, 18b

E_AR

Repetitive Avalanche Energy 

T_P

Peak Soldering Temperature

270

°C

T_J

Operating Junction and

-55 to + 175

T_STG

Storage Temperature Range

HEXFET® is a registered trademark of Infineon.

*Qualification standards can be found at www.infineon.com

2015-11-19

AUIRF7739L2TR

Thermal Resistance

Symbol

R_JA

Parameter

Typ.

–––

12.5

Max.

Units

°C/W

W/°C

Junction-to-Ambient 

Junction-to-Ambient 

Junction-to-Ambient 

Junction-to-Can 

–––

1.2

R_JA

–––

R_J-Can

Junction-to-PCB Mounted

–––

0.5

R_J-PCB

Linear Derating Factor 

0.83

Static Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Symbol

V_(BR)DSS

Parameter

Min. Typ. Max. Units

40 ––– –––

––– 0.008 ––– V/°C Reference to 25°C, I_D= 1.0mA

Conditions

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

V_GS= 0V, I_D= 250µA

V_(BR)DSS/T_J

R_DS(on)

V_GS(th)

–––

2.0

700 1000

2.8 4.0

_GS= 10V, I_D= 160A 

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

µ

_DS= V_GS, I_D= 250µA

_DS= 10V, I_D= 160A

Gate Threshold Voltage Coefficient

Forward Transconductance

Internal Gate Resistance

––– -6.7

––– mV/°C

V_GS(th)/T_J

gfs

280

–––

1.5

–––

5.0

R_G



–––

V_DS= 40V, V_GS= 0V

_DS= 40V, V_GS= 0V, T_J= 125°C

V_GS= 20V

V_GS= -20V

I_DSS

I_GSS

Drain-to-Source Leakage Current

µA

250

100

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

––– -100

Dynamic Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units

Total Gate Charge

Conditions

Q_g

Q_gs1

–––

220

100

330

–––

V_DS= 20V

_GS= 10V

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Gate Charge Overdrive

Switch Charge (Q_gs2+ Q_gd)

Output Charge

I_D= 160A

Q_gs2

Q_gd

See Fig.11

Q_godr

–––

Q_sw

Q_oss

t_d(on)

t_r

V_DS= 16V, V_GS= 0V

V_DD= 20V, V_GS= 10V 

I_D= 160A

Turn-On Delay Time

Rise Time

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_G= 1.8

C_iss

C_oss

C_rss

C_oss

C_{oss eff.}

Input Capacitance

––– 11880 –––

––– 2510 –––

––– 1240 –––

––– 8610 –––

––– 2230 –––

––– 3040 –––

V_GS= 0V

V_DS= 25V

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance

ƒ = 1.0 MHz

V_GS= 0V, V_DS= 1.0V, ƒ = 1.0 MHz

V_GS= 0V, V_DS= 32V, ƒ = 1.0 MHz

V_GS= 0V, V_DS= 0V to 32V

Notes  through  are on page 3

2015-11-19

AUIRF7739L2TR

Diode Characteristics

Symbol Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

(Body Diode)

MOSFET symbol

showing the

integral reverse

p-n junction diode.

I_S

–––

110

Pulsed Source Current

(Body Diode) 

I_SM

1070

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

–––

1.3

130

380

T_J= 25°C, I_S= 160A, V_GS= 0V 

T_J= 25°C, I_F= 160A, V_DD= 20V

dv/dt = 100A/µs 

250

Q_rr

 Mounted on minimum

footprint full size board with

metalized back and with small

clip heatsink (still air).

 Mounted to a PCB with

small clip heatsink (still air)

 Surface mounted on 1 in.

square Cu board (still air).

 Click on this section to link to the appropriate technical paper.

 Click on this section to link to the DirectFET^®Website.

 Surface mounted on 1 in. square Cu board, steady state.

 T_Cmeasured with thermocouple mounted to top (Drain) of part.

 Repetitive rating; pulse width limited by max. junction temperature.

 Starting T_J= 25°C, L = 0.021mH, R_G= 25, I_AS= 160A.

 Pulse width  400µs; duty cycle  2%.

 Used double sided cooling, mounting pad with large heatsink.

 Mounted on minimum footprint full size board with metalized back and with small clip heat sink.

 R_is measured at T_Jof approximately 90°C.

2015-11-19

AUIRF7739L2TR

1000

100

1000

100

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

TOP

BOTTOM

60µs PULSE WIDTH



Tj = 175°C

60µs PULSE WIDTH



Tj = 25°C

4.5V

0.1

100

1000

0.1

100

1000

, Drain-to-Source Voltage (V)

Fig. 1 Typical Output Characteristics

Fig. 2 Typical Output Characteristics

0.93

0.92

0.91

0.90

0.89

0.88

0.87

0.86

0.85

= 10V

= 160A

= 125°C

= 25°C

5.0

5.5

6.0

6.5

7.0

7.5

8.0

120

160

200

, Drain Current (A)

Gate -to -Source Voltage (V)

GS,

Fig. 4 Typical On-Resistance vs. Drain Current

Fig. 3 Typical On-Resistance vs. Gate Voltage

1000

2.0

= 160A

= 10V

100

= 175°C

1.5

1.0

0.5

= 25°C

= 25V

60µs PULSE WIDTH

0.1

-60 -40 -20 0 20 40 60 80 100120140160180

, Junction Temperature (°C)

, Gate-to-Source Voltage (V)

Fig 6. Normalized On-Resistance vs. Temperature

2015-11-19

Fig 5. Typical Transfer Characteristics

AUIRF7739L2TR

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

1000

100

= 175°C

= 25°C

= 250µA

= 1.0mA

= 1.0A

= 0V

2.5

1.0

-75 -50 -25

25 50 75 100 125 150 175 200

, Temperature ( °C )

0.0

0.5

1.0

1.5

2.0

3.0

, Source-to-Drain Voltage (V)

Fig 8. Typical Source-Drain Diode Forward Voltage

Fig. 7 Typical Threshold Voltage vs.

Junction Temperature

150

100000

= 0V,

= C

f = 1 MHZ

+ C , C

SHORTED

iss

= C

125

100

rss

oss

= C + C

= 25°C

iss

10000

= 175°C

oss

rss

= 10V

20µs PULSE WIDTH

1000

100

125

150

, Drain-to-Source Voltage (V)

100

,Drain-to-Source Current (A)

Fig 10. Typical Capacitance vs. Drain-to-Source Voltage

Fig 9. Typical Forward Trans conductance vs. Drain Current

300

14.0

I = 160A

12.0

250

200

150

100

= 32V

= 20V

10.0

8.0

6.0

4.0

2.0

0.0

100

125

150

175

100

150

200

250

300

, Case Temperature (°C)

Q , Total Gate Charge (nC)

Fig 12. Maximum Drain Current vs. Case Temperature

Fig 11. Typical Gate Charge vs.

Gate-to-Source Voltage

2015-11-19

AUIRF7739L2TR

10000

1000

100

1100

1000

900

800

700

600

500

400

300

200

100

OPERATION IN THIS AREA

LIMITED BY R (on)

TOP

29A

46A

BOTTOM 160A

100µsec

1msec

10msec

Tc = 25°C

Tj = 175°C

Single Pulse

100

125

150

175

, Drain-to-Source Voltage (V)

Starting T , Junction Temperature (°C)

Fig 14. Maximum Avalanche Energy vs. Temperature

Fig 13. Maximum Safe Operating Area

D = 0.50

0.20

0.10

0.1

R₁

R₂

R₃

R₄

0.05

Ri (°C/W)

0.1080

i (sec)

0.000171



0.02

0.01



^J_J



^C_C

0.6140

0.4520

0.053914

0.006099

0.036168



¹₁



²₂

³₃

⁴₄

Ci= iRi

1.47e-05

SINGLE PULSE

( THERMAL RESPONSE )

0.001

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.0001

1E-006

1E-005

0.0001

0.001

0.01

0.1

, Rectangular Pulse Duration (sec)

Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000

100

Duty Cycle = Single Pulse

Allowed avalanche Current vs avalanche

pulsewidth, tav, assumingTj = 150°C and

Tstart =25°C (Single Pulse)

0.01

0.05

0.10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assumingj = 25°C and

Tstart = 150°C.

0.1

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 16. Typical Avalanche Current vs. Pulse Width

2015-11-19

AUIRF7739L2TR

300

250

200

150

100

Notes on Repetitive Avalanche Curves , Figures 16, 17:

TOP

BOTTOM 1.0% Duty Cy cle

= 160A

Single Pulse

(For further info, see AN-1005 at www.infineon.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a temperature far in

excess of Tjmax. This is validated for every part type.

2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.

4. PD (ave) = Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase

during avalanche).

6. Iav = Allowable avalanche current.

7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as

25°C in Figure 16, 17).

tav = Average time in avalanche.

D = Duty cycle in avalanche = tav ·f

ZthJC(D, tav) = Transient thermal resistance, see Figures 15)

100

125

150

175

Starting T , Junction Temperature (°C)

_{D (ave)}= 1/2 ( 1.3·BV·I_av) = T/ Z_thJC

I_av= 2T/ [1.3·BV·Z_th]

Fig 17. Maximum Avalanche Energy vs. Temperature

_{AS (AR)}= P_{D (ave)}·t_av

Fig 18b. Unclamped Inductive Waveforms

Fig 18a. Unclamped Inductive Test Circuit

VDD

Fig 19a. Gate Charge Test Circuit

Fig 19b. Gate Charge Waveform

Fig 20a. Switching Time Test Circuit

Fig 20b. Switching Time Waveforms

2015-11-19

AUIRF7739L2TR

DirectFET^®Board Footprint, L8 (Large Size Can).

Please see DirectFET^®application note AN-1035 for all details regarding the assembly of DirectFET^®.

This includes all recommendations for stencil and substrate designs.

G = GATE

D = DRAIN

S = SOURCE

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

2015-11-19

AUIRF7739L2TR

DirectFET^®Outline Dimension, L8 (Large Size Can).

Please see DirectFET^®application note AN-1035 for all details regarding the assembly of DirectFET^®. This includes

all recommendations for stencil and substrate designs.

DirectFET^®Part Marking

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

2015-11-19

AUIRF7739L2TR

DirectFET^®Tape & Reel Dimension (Showing component orientation)

NOTE: Controlling dimensions in mm

Std reel quantity is 4000 parts, ordered as AUIRF7739L2TR.

REEL DIMENSIONS

STANDARD OPTION (QTY 4000)

METRIC

IMPERIAL

CODE

MIN

MAX

N.C

MIN

MAX

N.C

12.992

0.795

0.504

0.059

3.900

N.C

330.00

20.20

12.80

1.50

N.C

13.20

N.C

0.520

N.C

99.00

N.C

100.00

22.40

18.40

19.40

3.940

0.880

0.720

0.760

0.650

0.630

16.40

15.90

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

2015-11-19

AUIRF7739L2TR

Qualification Information

Qualification Level

Automotive

(per AEC-Q101)

Comments: This part number(s) passed Automotive qualification. Infineon’s

Industrial and Consumer qualification level is granted by extension of the higher

Automotive level.

DFET2 Large Can

MSL1

Moisture Sensitivity Level

Class M4 (800V)^†

AEC-Q101-002

Class H3A (7000V)^†

AEC-Q101-001

N/A

Machine Model

Human Body Model

ESD

Charged Device Model

AEC-Q101-005

Yes

RoHS Compliant

† Highest passing voltage.

Revision History

Date

Comments

 Updated datasheet with corporate template

 Corrected ordering table on page 1.

 Updated Tape and Reel option on page 10

11/19/2015

Published by

Infineon Technologies AG

81726 München, Germany

IMPORTANT NOTICE

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics

(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any

information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and

liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third

party.

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this

document and any applicable legal requirements, norms and standards concerning customer’s products and any use of

the product of Infineon Technologies in customer’s applications.

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of

customer’s technical departments to evaluate the suitability of the product for the intended application and the

completeness of the product information given in this document with respect to such application.

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies office (www.infineon.com).

WARNINGS

Due to technical requirements products may contain dangerous substances. For information on the types in question

please contact your nearest Infineon Technologies office.

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized

representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a

failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.

2015-11-19

AUIRF7739L2TR_15 [INFINEON]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E