AUIRF7749L2TR [INFINEON]

Advanced Process Technology;


型号：	AUIRF7749L2TR
厂家：	Infineon
描述：	Advanced Process Technology
文件：	总12页 (文件大小：508K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AUTOMOTIVE GRADE

AUIRF7749L2TR

Automotive DirectFET^®Power MOSFET 

60V

 Advanced Process Technology

V_(BR)DSS

R_DS(on)typ.

max.

 Optimized for Automotive Motor Drive, DC-DC and

1.1m

1.5m

345A

other Heavy Load Applications

 Exceptionally Small Footprint and Low Profile

 High Power Density

I_{D (Silicon Limited)}

Q_g

 Low Parasitic Parameters

 Dual Sided Cooling

183nC

 175°C Operating Temperature

 Repetitive Avalanche Allowed up to Tjmax

 Lead Free, RoHS Compliant and Halogen Free

 Automotive Qualified *

Applicable DirectFET^®Outline and Substrate Outline 

DirectFET2 L-can

Description

The AUIRF7749L2 combines the latest Automotive HEXFET^®Power MOSFET Silicon technology with the advanced DirectFET^®packaging technology

to achieve exceptional performance in a package that has the footprint of a D-Pak (TO-252AA) and only 0.7mm profile. The DirectFET^®package is

compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering

techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET^®package allows dual

sided cooling to maximize thermal transfer in automotive power systems.

This HEXFET^®Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET^®packaging

platform coupled with the latest silicon technology allows the AUIRF7749L2 to offer substantial system level savings and performance improvement

specifically in motor drive, DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing

techniques to achieve ultra low on-resistance per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high

repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current

automotive applications.

Standard Pack

Base Part Number

AUIRF7749L2

Package Type

Orderable Part Number

Form

Quantity

DirectFET^®

AUIRF7749L2TR

Tape and Reel

4000

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.

Parameter

Max.

Units

V_GS

Gate-to-Source Voltage

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_A= 25°C

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V 

Continuous Drain Current, V_GS@ 10V 

Continuous Drain Current, V_GS@ 10V (Package limit) 

Pulsed Drain Current 

345

243

375

1380

341

3.8

I_DM

P_D@T_C= 25°C

P_D@T_A= 25°C

Power Dissipation 

Power Dissipation 

E_AS

E_AS(Tested)

I_AR

E_AR

T_P

Single Pulse Avalanche Energy (Thermally Limited) 

Single Pulse Avalanche Energy 

Avalanche Current 

Repetitive Avalanche Energy 

Peak Soldering Temperature

315

714

See Fig. 16, 17, 18a, 18b

270

°C

T_J

Operating Junction and

-55 to + 175

T_STG

Storage Temperature Range

HEXFET® is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

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Thermal Resistance

Symbol

R_JA

Parameter

Typ.

Max.

Units

Junction-to-Ambient 

Junction-to-Ambient 

Junction-to-Ambient 

Junction-to-Can 

–––

12.5

–––

0.44

0.5

R_JA

°C/W

W/°C

–––

R_J-Can

Junction-to-PCB Mounted

Linear Derating Factor 

R_J-PCB

2.3

Static Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Symbol

V_(BR)DSS

Parameter

Min. Typ. Max. Units

Conditions

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

–––

2.0

–––

V_GS= 0V, I_D= 250µA

––– mV/°C Reference to 25°C, I_D= 3.0mA

V_(BR)DSS/T_J

R_DS(on)

V_GS(th)

1.1

–––

1.5

4.0

_GS= 10V, I_D= 120A 

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

m

_DS= V_GS, I_D= 250µA

_DS= 10V, I_D= 120A

Gate Threshold Voltage Coefficient

Forward Trans conductance

Internal Gate Resistance

––– -8.8 ––– mV/°C

V_GS(th)/T_J

gfs

185

–––

1.5

–––

R_G



–––

V_DS= 60V, V_GS= 0V

_DS= 60V, V_GS= 0V, T_J= 125°C

V_GS= 20V

V_GS= -20V

I_DSS

I_GSS

Drain-to-Source Leakage Current

µA

250

100

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

––– -100

Dynamic Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units

Conditions

Q_g

Q_gs1

Total Gate Charge

–––

183

275

–––

V_DS= 30V

_GS= 10V

I_D= 120A

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Gate Charge Overdrive

Switch Charge (Q_gs2+ Q_gd)

Output Charge

Q_gs2

Q_gd

Q_godr

Q_sw

Q_oss

t_d(on)

t_r

119

V_DS= 48V, V_GS= 0V

V_DD= 30V, V_GS= 10V 

I_D= 120A

Turn-On Delay Time

Rise Time

149

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_G= 1.8

C_iss

C_oss

C_rss

Input Capacitance

––– 10655 –––

––– 1627 –––

V_GS= 0V

V_DS= 25V

Output Capacitance

Reverse Transfer Capacitance

Effective Output Capacitance

ƒ = 1.0 MHz

–––

680

–––

_osseff.

––– 1959 –––

V_GS= 0V, V_DS= 0V to 48V

Notes  through are on page 11

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Diode Characteristics

Symbol Parameter

Min.

Typ.

Max. Units

Conditions

MOSFET symbol

showing the

Continuous Source Current

(Body Diode)

I_S

–––

345

integral reverse

Pulsed Source Current

(Body Diode) 

I_SM

–––

1380

p-n junction diode.

T_J= 25°C, I_S= 120A, V_GS= 0V 

I_F= 120A, V_DD= 30V

di/dt = 100A/µs 

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

–––

1.3

–––

Q_rr

Notes  through are on page 11

 Mounted on minimum

footprint full size board with

metalized back and with small

clip heatsink (still air).

 Mounted to a PCB with

small clip heatsink (still air)

 Surface mounted on 1 in.

square Cu board (still air).

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10000

1000

100

10000

1000

100

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

TOP

BOTTOM

4.5V

60µs PULSE WIDTH



Tj = 175°C

Tj = 25°C

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig. 1 Typical Output Characteristics

Fig. 2 Typical Output Characteristics

8.0

= 25°C

= 120A

6.0

4.0

2.0

0.0

Vgs = 5.5V

Vgs = 6.0V

Vgs = 7.0V

Vgs = 8.0V

Vgs = 10V

Vgs = 12V

T = 125°C

T = 25°C

10 12 14 16 18 20

120

160

200

Gate -to -Source Voltage (V)

I , Drain Current (A)

GS,

Fig. 4 Typical On-Resistance vs. Drain Current

Fig. 3 Typical On-Resistance vs. Gate Voltage

2.0

10000

= 25V

= 120A

= 10V

60µs PULSE WIDTH

1.8

1.6

1.4

1.2

1.0

0.8

0.6



1000

100

T = 25°C

T = 175°C

0.1

2.0

3.0

4.0

5.0

6.0

7.0

-60 -40 -20

20 40 60 80 100 120 140 160 180

, Gate-to-Source Voltage (V)

, Junction Temperature (°C)

Fig 6. Normalized On-Resistance vs. Temperature

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Fig 5. Transfer Characteristics

AUIRF7749L2TR

10000

1000

100

4.5

4.0

3.5

3.0

2.5

2.0

1.5

T = 175°C

T = 25°C

= 250µA

= 1.0mA

= 1.0A

= 0V

0.1

-75 -50 -25

25 50 75 100 125 150 175

0.2

0.4

0.6

0.8

1.0

1.2

1.4

T , Temperature ( °C )

, Source-to-Drain Voltage (V)

Fig. 7 Typical Threshold Voltage vs.

Fig 8. Typical Source-Drain Diode Forward Voltage

320

100000

= 0V,

= C

f = 1 MHZ

+ C , C

SHORTED

iss

T = 25°C

= C

rss

oss

= C + C

240

iss

10000

1000

100

oss

T = 175°C

160

rss

= 5.0V

380µs PULSE WIDTH

20 40 60 80 100 120 140 160 180

0.1

100

Drain-to-Source Current (A)

, Drain-to-Source Voltage (V)

Fig 10. Typical Capacitance vs. Drain-to-Source Voltage

Fig 9. Typical Forward Trans conductance vs. Drain Current

350

= 120A

300

250

200

150

100

= 48V

= 30V

VDS= 12V

120

160

200

240

100

125

150

175

Total Gate Charge (nC)

, CaseTemperature (°C)

Fig 11. Typical Gate Charge vs.

Fig 12. Maximum Drain Current vs. Case Temperature

Gate-to-Source Voltage

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1400

1200

1000

800

600

400

200

1000

100

100µsec

1msec

TOP

15A

35A

120A

BOTTOM

OPERATION IN THIS AREA

LIMITED BY R (on)

10msec

Tc = 25°C

Tj = 175°C

Single Pulse

0.1

100

125

150

175

0.1

Starting T , Junction Temperature (°C)

, Drain-toSource Voltage (V)

Fig 14. Maximum Avalanche Energy vs. Temperature

Fig 13. Maximum Safe Operating Area

D = 0.50

0.1

0.01

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

( THERMAL RESPONSE )

0.001

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.0001

1E-006

1E-005

0.0001

0.001

0.01

0.1

, Rectangular Pulse Duration (sec)

Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000

100

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming Tj = 150C and

Tstart =25°C (Single Pulse)

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming  j = 25°C and

Tstart = 150°C. (Single Pulse)

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 16. Typical Avalanche Current vs. Pulse Width

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AUIRF7749L2TR

350

300

250

200

150

100

Notes on Repetitive Avalanche Curves , Figures 16, 17:

TOP

BOTTOM 1.0% Duty Cycle

= 120A

Single Pulse

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a temperature far in

excess of T^jmax. This is validated for every part type.

2. Safe operation in Avalanche is allowed as long as T^jmaxis not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.

4. P^{D (ave)}= Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase

during avalanche).

6. I^av= Allowable avalanche current.

7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as

25°C in Figure 16, 17).

t^{av =}Average time in avalanche.

D = Duty cycle in avalanche = t^av·f

Z^thJC(D, tav) = Transient thermal resistance, see Figures 15)

100

125

150

175

Starting T , Junction Temperature (°C)

P_{D (ave)}= 1/2 ( 1.3·BV·I_av) = T/ Z_thJC

I_av= 2T/ [1.3·BV·Z_th]

E_{AS (AR)}= P_{D (ave)}·t_av

Fig 17. Maximum Avalanche Energy vs. Temperature

Fig 18b. Unclamped Inductive Waveforms

Fig 18a. Unclamped Inductive Test Circuit

VDD

Fig 19a. Gate Charge Test Circuit

Fig 19b. Gate Charge Waveform

Fig 20a. Switching Time Test Circuit

Fig 20b. Switching Time Waveforms

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AUIRF7749L2TR

DirectFET^®Board Footprint, L8 Outline

(Large Size Can, 8-Source Pads)

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.

This includes all recommendations for stencil and substrate designs.

G = GATE

D = DRAIN

S = SOURCE

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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AUIRF7749L2TR

DirectFET^®Outline Dimension, L8 Outline

(Large Size Can, 8-Source Pads)

Please see DirectFET^®application note AN-1035 for all details regarding the assembly of DirectFET^®. This includes

all recommendations for stencil and substrate designs.

DIMENSIONS

METRIC

IMPERIAL

CODE MIN MAX

MIN

MAX

0.360

0.280

0.236

0.026

0.024

0.048

0.040

0.030

0.017

0.057

0.104

0.215

0.029

0.007

0.003

9.05 9.15

6.85 7.10

5.90 6.00

0.55 0.65

0.58 0.62

1.18 1.22

0.98 1.02

0.73 0.77

0.38 0.42

1.35 1.45

2.55 2.65

5.35 5.45

0.68 0.74

0.09 0.17

0.02 0.08

0.356

0.270

0.232

0.022

0.023

0.046

0.039

0.029

0.015

0.053

0.100

0.211

0.027

0.003

0.001

Dimensions are shown in

millimeters (inches)

DirectFET^®Part Marking

"AU" = GATE AND

AUTOMOTIVE MARKING

LOGO

PART NUMBER

BATCH NUMBER

DATE CODE

Line above the last character of

the date code indicates "Lead-Free"

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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AUIRF7749L2TR

DirectFET^®Tape & Reel Dimension (Showing component orientation)

NOTE: Controlling dimensions in mm

Std reel quantity is 4000 parts. (ordered as AUIRF7749L2TR).

REEL DIMENSIONS

STANDARD OPTION (QTY 4000)

METRIC

IMPERIAL

CODE

MIN

MAX

N.C

MAX

N.C

12.992

0.795

0.504

0.059

3.900

N.C

330.00

20.20

12.80

1.50

N.C

13.20

N.C

0.520

N.C

99.00

N.C

100.00

22.40

18.40

19.40

3.940

0.880

0.720

0.760

0.650

0.630

16.40

15.90

LOADED TAPE FEED DIRECTION

DIMENSIONS

METRIC

IMPERIAL

NOTE: CONTROLLING

DIMENSIONS IN MM

CODE

MIN

MAX

0.476

0.161

0.642

0.299

0.291

0.398

N.C

MIN

11.90

3.90

15.90

7.40

7.20

9.90

1.50

MAX

12.10

4.10

4.69

0.154

0.623

0.291

0.283

0.390

0.059

16.30

7.60

7.40

10.10

N.C

0.063

1.60

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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AUIRF7749L2TR

Qualification Information^†

Qualification Level

Automotive

(per AEC-Q101)

Comments: This part number(s) passed Automotive qualification. IR’s

Industrial and Consumer qualification level is granted by extension of the

higher Automotive level.

Moisture Sensitivity Level

DirectFET2 L-CAN

MSL1

Class M4 (+/- 800V)^††

Machine Model

ESD

AEC-Q101-002

Class H2 (+/- 4000V)^††

AEC-Q101-001

Yes

Human Body Model

RoHS Compliant

†

Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/

†† Highest passing voltage.

 Limited by T_Jmax, Starting T_J= 25°C, L = 0.044mH,

R_G= 50, I_AS= 120A.

 Pulse width  400µs; duty cycle  2%.

 Used double sided cooling, mounting pad with large

heat sink.

 Click on this section to link to the appropriate technical

paper.

 Click on this section to link to the Direct FET^®Website.

 Surface mounted on 1 in. square Cu board, steady state.

 T_Cmeasured with thermocouple mounted to top (Drain)

of part.

 Mounted on minimum footprint full size board with

metalized back and with small clip heat sink.

 R_is measured at T_Jof approximately 90°C.

 Repetitive rating; pulse width limited by max. junction

temperature.

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IMPORTANT NOTICE

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve

the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services

at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow

automotive industry and / or customer specific requirements with regards to product discontinuance and process change

notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.

IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s

standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this

warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily

performed.

IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products

and applications using IR components. To minimize the risks with customer products and applications, customers should

provide adequate design and operating safeguards.

Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is

accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with altera-

tions is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Infor-

mation of third parties may be subject to additional restrictions.

Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or

service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive

business practice. IR is not responsible or liable for any such statements.

IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into

the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR

product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for

any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, em-

ployees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable

attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or

unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.

Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are de-

signed and manufactured to meet DLA military specifications required by certain military, aerospace or other applications.

Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring

military grade products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and

regulatory requirements in connection with such use.

IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR

products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designa-

tion “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will

not be responsible for any failure to meet such requirements.

For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/

WORLD HEADQUARTERS:

101 N. Sepulveda Blvd., El Segundo, California 90245

Tel: (310) 252-7105

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