AUIRFR2405TR [INFINEON]
Power Field-Effect Transistor, 30A I(D), 55V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC PACKAGE-3;型号: | AUIRFR2405TR |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 30A I(D), 55V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC PACKAGE-3 |
文件: | 总12页 (文件大小:204K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 97688A
AUTOMOTIVE GRADE
AUIRFR2405
HEXFET® Power MOSFET
Features
l Advanced Planar Technology
D
V(BR)DSS
55V
●
Dynamic dV/dT Rating
RDS(on) typ.
max
ID (Silicon Limited)
11.8m
Ω
l Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed
up to Tjmax
16m
56A
Ω
G
S
ID (Package Limited)
30A
l Lead-Free, RoHS Compliant
l Automotive Qualified*
D
Description
S
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This ben-
efit combined with the fast switching speed and rugge-
dized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in Auto-
motive and a wide variety of other applications.
G
D-Pak
AUIRFR2405
G
Gate
D
S
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
56
Parameter
Units
Continuous Drain Current, VGS @ 10V (Silicon Limited)
@ T = 25°C
C
I
I
I
I
D
D
D
40
Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
@ T = 100°C
C
(Package Limited)
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
30
@ T = 25°C
C
220
DM
110
0.71
± 20
P
@T = 25°C Power Dissipation
W
W/°C
V
D
C
Linear Derating Factor
Gate-to-Source Voltage
V
GS
EAS
IAR
130
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
mJ
A
34
11
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
V/ns
5.0
-55 to + 175
T
T
J
Storage Temperature Range
°C
STG
300
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
Typ.
Max.
1.4
Units
RθJC
RθJA
RθJA
Junction-to-Case
–––
–––
–––
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
50
°C/W
110
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/30/11
AUIRFR2405
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250μA
V(BR)DSS
V
Δ
Δ
V(BR)DSS/ TJ
Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
11.8
–––
–––
–––
–––
–––
16
4.0
–––
20
VGS = 10V, ID = 34A
Ω
V
m
VDS = VGS, ID = 250μA
gfs
IDSS
Forward Transconductance
30
S
VDS = 25V, ID = 34A
Drain-to-Source Leakage Current
–––
–––
–––
–––
μA VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
nA VGS = 20V
250
200
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– -200
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
–––
–––
–––
–––
–––
–––
–––
–––
70
16
110
23
ID = 34A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 44V
19
29
V
V
GS = 10V
DD = 28V
15
–––
–––
–––
–––
–––
130
55
ID = 34A
ns RG = 6.8Ω
RD = 10Ω
td(off)
tf
Turn-Off Delay Time
Fall Time
78
D
S
LD
Internal Drain Inductance
4.5
Between lead,
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
VGS = 0V
DS = 25V
ƒ = 1.0MHz, See Fig. 5
Ciss
Input Capacitance
––– 2430 –––
Coss
Output Capacitance
–––
–––
470
100
–––
–––
pF
V
Crss
Reverse Transfer Capacitance
Output Capacitance
Coss
––– 2040 –––
V
V
V
GS = 0V, VDS = 1.0V, ƒ = 1.0MHz
GS = 0V, VDS = 44V, ƒ = 1.0MHz
GS = 0V, VDS = 0V to 44V
Coss
Output Capacitance
Effective Output Capacitance
–––
–––
350
350
–––
–––
Coss eff.
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
I
I
Continuous Source Current
–––
–––
MOSFET symbol
56
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
–––
–––
220
SM
S
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
62
1.3
93
V
T = 25°C, I = 34A, V = 0V
SD
J S GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 34A
J F
rr
di/dt = 100A/μs
Q
t
170
260
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Notes:
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
Repetitive rating; pulse width limited by
max. junction temperature.
as Coss while VDS is rising from 0 to 80% VDSS
.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to
application note #AN-994.
Starting TJ = 25°C, L = 0.22mH
RG = 25Ω, IAS = 34A.
ISD ≤ 34A, di/dt ≤ 190A/μs, VDD ≤ V(BR)DSS
TJ ≤ 175°C.
Pulse width ≤ 300μs; duty cycle ≤ 2%.
,
Rθ is measured at TJ of approximately 90°C.
2
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AUIRFR2405
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Moisture Sensitivity Level
D-Pak
MSL1
Class M4 (+/- 500V)†††
Machine Model
AEC-Q101-002
Class H1C (+/- 2000V)†††
AEC-Q101-001
Human Body Model
ESD
Class C5 (+/- 2000V)†††
AEC-Q101-005
Charged Device
Model
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRFR2405
1000
100
10
1000
VGS
15V
VGS
TOP
TOP
15V
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
100
4.5V
4.5V
20μs PULSE WIDTH
°
T = 175 C
J
20μs PULSE WIDTH
°
T = 25 C
J
10
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
56A
=
I
D
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
°
T = 175 C
J
100
V
= 25V
DS
20μs PULSE WIDTH
V
=10V
GS
10
4.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
5.0
6.0
7.0
8.0 9.0
10.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
4
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AUIRFR2405
4000
3200
2400
1600
800
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
I
D
= 34A
GS
C
= C + C
iss
gs
gd ,
V
= 44V
= 27V
= 11V
DS
C
= C
rss
gd
V
V
DS
C
= C + C
oss
ds
gd
DS
C
iss
C
C
4
oss
FOR TEST CIRCUIT
SEE FIGURE 13
rss
0
0
1
10
100
0
20
40
60
80
100
V
, Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100
10
1
°
T = 175 C
J
100us
°
T = 25 C
J
1ms
°
T = 25 C
10ms
C
J
°
T = 175 C
V
= 0 V
Single Pulse
GS
2.0
1
0.4
0.8
1.2
1.6
2.4
1
10
100
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
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5
AUIRFR2405
RD
VDS
60
VGS
LIMITED BY PACKAGE
D.U.T.
RG
50
40
30
20
10
0
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
0.02
0.01
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRFR2405
15V
240
200
160
120
80
I
D
TOP
14A
24A
DRIVER
+
L
V
DS
BOTTOM 34A
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
40
0
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
Q
Q
GD
GS
.2μF
12V
.3μF
+
V
DS
D.U.T.
V
-
G
V
GS
3mA
Charge
I
I
D
G
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
AUIRFR2405
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
+
-
RG
• dv/dt controlled by RG
+
-
VDD
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
8
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AUIRFR2405
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak Part Marking Information
Part Number
AUFR2405
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
IR Logo
YWWA
XX or XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRFR2405
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
10
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AUIRFR2405
Ordering Information
Base part
number
Package Type
Standard Pack
Complete Part Number
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Quantity
75
2000
3000
3000
AUIRFR2405
Dpak
AUIRFR2405
AUIRFR2405TR
AUIRFR2405TRL
AUIRFR2405TRR
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11
AUIRFR2405
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its
subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and
other changes to its products and services at any time and to discontinue any product or services without
notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IRs terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IRs standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible
for their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without
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tion of this information with alterations is an unfair and deceptive business practice. IR is not responsible or
liable for such altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for
that product or service voids all express and any implied warranties for the associated IR product or service
and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical
implant into the body, or in other applications intended to support or sustain life, or in any other application
in which the failure of the IR product could create a situation where personal injury or death may occur. Should
Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall
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products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
12
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