AUIRFR2405TR [INFINEON]

Power Field-Effect Transistor, 30A I(D), 55V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC PACKAGE-3;
AUIRFR2405TR
型号: AUIRFR2405TR
厂家: Infineon    Infineon
描述:

Power Field-Effect Transistor, 30A I(D), 55V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC PACKAGE-3

文件: 总12页 (文件大小:204K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PD - 97688A  
AUTOMOTIVE GRADE  
AUIRFR2405  
HEXFET® Power MOSFET  
Features  
l Advanced Planar Technology  
D
V(BR)DSS  
55V  
Dynamic dV/dT Rating  
RDS(on) typ.  
max  
ID (Silicon Limited)  
11.8m  
Ω
l Low On-Resistance  
l 175°C Operating Temperature  
l Fast Switching  
l Fully Avalanche Rated  
l Repetitive Avalanche Allowed  
up to Tjmax  
16m  
56A  
Ω
G
S
ID (Package Limited)  
30A  
l Lead-Free, RoHS Compliant  
l Automotive Qualified*  
D
Description  
S
Specifically designed for Automotive applications,  
this Stripe Planar design of HEXFET® Power  
MOSFETs utilizes the latest processing techniques to  
achieve low on-resistance per silicon area. This ben-  
efit combined with the fast switching speed and rugge-  
dized device design that HEXFET power MOSFETs  
are well known for, provides the designer with an  
extremely efficient and reliable device for use in Auto-  
motive and a wide variety of other applications.  
G
D-Pak  
AUIRFR2405  
G
Gate  
D
S
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the  
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
56  
Parameter  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
@ T = 25°C  
C
I
I
I
I
D
D
D
40  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
A
@ T = 100°C  
C
(Package Limited)  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
30  
@ T = 25°C  
C
220  
DM  
110  
0.71  
± 20  
P
@T = 25°C Power Dissipation  
W
W/°C  
V
D
C
Linear Derating Factor  
Gate-to-Source Voltage  
V
GS  
EAS  
IAR  
130  
Single Pulse Avalanche Energy (Thermally Limited)  
Avalanche Current  
mJ  
A
34  
11  
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Operating Junction and  
mJ  
V/ns  
5.0  
-55 to + 175  
T
T
J
Storage Temperature Range  
°C  
STG  
300  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
Max.  
1.4  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Case  
–––  
–––  
–––  
Junction-to-Ambient (PCB Mount)  
Junction-to-Ambient  
50  
°C/W  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
08/30/11  
AUIRFR2405  
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Drain-to-Source Breakdown Voltage  
Min. Typ. Max. Units  
55 ––– –––  
Conditions  
VGS = 0V, ID = 250μA  
V(BR)DSS  
V
Δ
Δ
V(BR)DSS/ TJ  
Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA  
RDS(on)  
VGS(th)  
Static Drain-to-Source On-Resistance  
Gate Threshold Voltage  
–––  
2.0  
11.8  
–––  
–––  
–––  
–––  
–––  
16  
4.0  
–––  
20  
VGS = 10V, ID = 34A  
Ω
V
m
VDS = VGS, ID = 250μA  
gfs  
IDSS  
Forward Transconductance  
30  
S
VDS = 25V, ID = 34A  
Drain-to-Source Leakage Current  
–––  
–––  
–––  
–––  
μA VDS = 55V, VGS = 0V  
VDS = 44V, VGS = 0V, TJ = 150°C  
nA VGS = 20V  
250  
200  
IGSS  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
––– -200  
VGS = -20V  
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter Min. Typ. Max. Units Conditions  
Total Gate Charge  
Qg  
Qgs  
Qgd  
td(on)  
tr  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
70  
16  
110  
23  
ID = 34A  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
Rise Time  
nC VDS = 44V  
19  
29  
V
V
GS = 10V  
DD = 28V  
15  
–––  
–––  
–––  
–––  
–––  
130  
55  
ID = 34A  
ns RG = 6.8Ω  
RD = 10Ω  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
78  
D
S
LD  
Internal Drain Inductance  
4.5  
Between lead,  
nH 6mm (0.25in.)  
from package  
G
LS  
Internal Source Inductance  
–––  
7.5  
–––  
and center of die contact  
VGS = 0V  
DS = 25V  
ƒ = 1.0MHz, See Fig. 5  
Ciss  
Input Capacitance  
––– 2430 –––  
Coss  
Output Capacitance  
–––  
–––  
470  
100  
–––  
–––  
pF  
V
Crss  
Reverse Transfer Capacitance  
Output Capacitance  
Coss  
––– 2040 –––  
V
V
V
GS = 0V, VDS = 1.0V, ƒ = 1.0MHz  
GS = 0V, VDS = 44V, ƒ = 1.0MHz  
GS = 0V, VDS = 0V to 44V  
Coss  
Output Capacitance  
Effective Output Capacitance  
–––  
–––  
350  
350  
–––  
–––  
Coss eff.  
Diode Characteristics  
Parameter  
Min. Typ. Max. Units  
Conditions  
D
I
I
Continuous Source Current  
–––  
–––  
MOSFET symbol  
56  
S
(Body Diode)  
Pulsed Source Current  
A
showing the  
integral reverse  
G
–––  
–––  
220  
SM  
S
(Body Diode)  
p-n junction diode.  
V
t
Diode Forward Voltage  
–––  
–––  
–––  
–––  
62  
1.3  
93  
V
T = 25°C, I = 34A, V = 0V  
SD  
J S GS  
Reverse Recovery Time  
Reverse Recovery Charge  
Forward Turn-On Time  
ns T = 25°C, I = 34A  
J F  
rr  
di/dt = 100A/μs  
Q
t
170  
260  
nC  
rr  
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  
on  
Notes:  
Coss eff. is a fixed capacitance that gives the same charging time  
 Repetitive rating; pulse width limited by  
max. junction temperature.  
as Coss while VDS is rising from 0 to 80% VDSS  
.
† Calculated continuous current based on maximum allowable  
junction temperature. Package limitation current is 30A.  
‡ When mounted on 1" square PCB (FR-4 or G-10 Material) .  
For recommended footprint and soldering techniques refer to  
application note #AN-994.  
‚ Starting TJ = 25°C, L = 0.22mH  
RG = 25Ω, IAS = 34A.  
ƒ ISD 34A, di/dt 190A/μs, VDD V(BR)DSS  
TJ 175°C.  
„ Pulse width 300μs; duty cycle 2%.  
,
ˆ Rθ is measured at TJ of approximately 90°C.  
2
www.irf.com  
AUIRFR2405  
Qualification Information†  
Automotive  
††  
(per AEC-Q101)  
Qualification Level  
Comments: This part number(s) passed Automotive qualification.  
IR’s Industrial and Consumer qualification level is granted by  
extension of the higher Automotive level.  
Moisture Sensitivity Level  
D-Pak  
MSL1  
Class M4 (+/- 500V)†††  
Machine Model  
AEC-Q101-002  
Class H1C (+/- 2000V)†††  
AEC-Q101-001  
Human Body Model  
ESD  
Class C5 (+/- 2000V)†††  
AEC-Q101-005  
Charged Device  
Model  
Yes  
RoHS Compliant  
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/  
†† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.  
††† Highest passing voltage.  
www.irf.com  
3
AUIRFR2405  
1000  
100  
10  
1000  
VGS  
15V  
VGS  
TOP  
TOP  
15V  
10V  
10V  
8.0V  
7.0V  
6.0V  
5.5V  
5.0V  
8.0V  
7.0V  
6.0V  
5.5V  
5.0V  
BOTTOM 4.5V  
BOTTOM 4.5V  
100  
4.5V  
4.5V  
20μs PULSE WIDTH  
°
T = 175 C  
J
20μs PULSE WIDTH  
°
T = 25 C  
J
10  
0.1  
0.1  
1
10  
100  
1
10  
100  
V
, Drain-to-Source Voltage (V)  
V
, Drain-to-Source Voltage (V)  
DS  
DS  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
1000  
2.5  
56A  
=
I
D
2.0  
1.5  
1.0  
0.5  
0.0  
°
T = 25 C  
J
°
T = 175 C  
J
100  
V
= 25V  
DS  
20μs PULSE WIDTH  
V
=10V  
GS  
10  
4.0  
-60 -40 -20  
0
20 40 60 80 100 120 140 160 180  
°
5.0  
6.0  
7.0  
8.0 9.0  
10.0  
T , Junction Temperature ( C)  
J
V
, Gate-to-Source Voltage (V)  
GS  
Fig 3. Typical Transfer Characteristics  
Fig 4. Normalized On-Resistance  
Vs. Temperature  
4
www.irf.com  
AUIRFR2405  
4000  
3200  
2400  
1600  
800  
20  
16  
12  
8
V
= 0V,  
f = 1MHz  
C SHORTED  
ds  
I
D
= 34A  
GS  
C
= C + C  
iss  
gs  
gd ,  
V
= 44V  
= 27V  
= 11V  
DS  
C
= C  
rss  
gd  
V
V
DS  
C
= C + C  
oss  
ds  
gd  
DS  
C
iss  
C
C
4
oss  
FOR TEST CIRCUIT  
SEE FIGURE 13  
rss  
0
0
1
10  
100  
0
20  
40  
60  
80  
100  
V
, Drain-to-Source Voltage (V)  
DS  
Q , Total Gate Charge (nC)  
G
Fig 6. Typical Gate Charge Vs.  
Fig 5. Typical Capacitance Vs.  
Gate-to-Source Voltage  
Drain-to-Source Voltage  
1000  
100  
10  
1000  
OPERATION IN THIS AREA LIMITED  
BY R  
DS(on)  
10us  
100  
10  
1
°
T = 175 C  
J
100us  
°
T = 25 C  
J
1ms  
°
T = 25 C  
10ms  
C
J
°
T = 175 C  
V
= 0 V  
Single Pulse  
GS  
2.0  
1
0.4  
0.8  
1.2  
1.6  
2.4  
1
10  
100  
V
,Source-to-Drain Voltage (V)  
V
, Drain-to-Source Voltage (V)  
SD  
DS  
Fig 8. Maximum Safe Operating Area  
Fig 7. Typical Source-Drain Diode  
Forward Voltage  
www.irf.com  
5
AUIRFR2405  
RD  
VDS  
60  
VGS  
LIMITED BY PACKAGE  
D.U.T.  
RG  
50  
40  
30  
20  
10  
0
+VDD  
-
VGS  
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
Fig 10a. Switching Time Test Circuit  
V
DS  
90%  
25  
50  
75  
100  
125  
150  
175  
°
T , Case Temperature ( C)  
C
10%  
V
GS  
t
t
r
t
t
f
d(on)  
d(off)  
Fig 9. Maximum Drain Current Vs.  
Case Temperature  
Fig 10b. Switching Time Waveforms  
10  
1
D = 0.50  
0.20  
0.10  
0.05  
P
2
DM  
0.1  
t
1
SINGLE PULSE  
(THERMAL RESPONSE)  
0.02  
0.01  
t
2
Notes:  
1. Duty factor D =  
t / t  
1
2. Peak T =P  
x Z  
+ T  
thJC C  
J
DM  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
t , Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case  
6
www.irf.com  
AUIRFR2405  
15V  
240  
200  
160  
120  
80  
I
D
TOP  
14A  
24A  
DRIVER  
+
L
V
DS  
BOTTOM 34A  
D.U.T  
AS  
R
G
V
DD  
-
I
A
20V  
0.01  
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit  
40  
0
25  
50  
75  
100  
125  
150  
175  
°
Starting T , Junction Temperature ( C)  
J
V
(BR)DSS  
t
p
Fig 12c. Maximum Avalanche Energy  
Vs. Drain Current  
I
AS  
Fig 12b. Unclamped Inductive Waveforms  
Current Regulator  
Same Type as D.U.T.  
Q
G
50KΩ  
Q
Q
GD  
GS  
.2μF  
12V  
.3μF  
+
V
DS  
D.U.T.  
V
-
G
V
GS  
3mA  
Charge  
I
I
D
G
Current Sampling Resistors  
Fig 13b. Gate Charge Test Circuit  
Fig 13a. Basic Gate Charge Waveform  
www.irf.com  
7
AUIRFR2405  
Peak Diode Recovery dv/dt Test Circuit  
D.U.T  
+
Circuit Layout Considerations  
Low Stray Inductance  
Ground Plane  
ƒ
Low Leakage Inductance  
Current Transformer  
-
+
‚
„
-
+
-

RG  
dv/dt controlled by RG  
+
-
VDD  
Driver same type as D.U.T.  
ISD controlled by Duty Factor "D"  
D.U.T. - Device Under Test  
Driver Gate Drive  
P.W.  
Period  
Period  
D =  
P.W.  
V
=10V  
*
GS  
D.U.T. I Waveform  
SD  
Reverse  
Recovery  
Current  
Body Diode Forward  
Current  
di/dt  
D.U.T. V Waveform  
DS  
Diode Recovery  
dv/dt  
V
DD  
Re-Applied  
Voltage  
Body Diode  
Forward Drop  
Inductor Curent  
I
SD  
Ripple 5%  
* VGS = 5V for Logic Level Devices  
Fig 14. For N-Channel HEXFET® Power MOSFETs  
8
www.irf.com  
AUIRFR2405  
D-Pak (TO-252AA) Package Outline  
Dimensions are shown in millimeters (inches)  
D-Pak Part Marking Information  
Part Number  
AUFR2405  
Date Code  
Y= Year  
WW= Work Week  
A= Automotive, LeadFree  
IR Logo  
YWWA  
XX or XX  
Lot Code  
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/  
www.irf.com  
9
AUIRFR2405  
D-Pak (TO-252AA) Tape & Reel Information  
Dimensions are shown in millimeters (inches)  
TR  
TRL  
TRR  
16.3 ( .641 )  
15.7 ( .619 )  
16.3 ( .641 )  
15.7 ( .619 )  
12.1 ( .476 )  
11.9 ( .469 )  
8.1 ( .318 )  
7.9 ( .312 )  
FEED DIRECTION  
FEED DIRECTION  
NOTES :  
1. CONTROLLING DIMENSION : MILLIMETER.  
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).  
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
13 INCH  
16 mm  
NOTES :  
1. OUTLINE CONFORMS TO EIA-481.  
10  
www.irf.com  
AUIRFR2405  
Ordering Information  
Base part  
number  
Package Type  
Standard Pack  
Complete Part Number  
Form  
Tube  
Tape and Reel  
Tape and Reel Left  
Tape and Reel Right  
Quantity  
75  
2000  
3000  
3000  
AUIRFR2405  
Dpak  
AUIRFR2405  
AUIRFR2405TR  
AUIRFR2405TRL  
AUIRFR2405TRR  
www.irf.com  
11  
AUIRFR2405  
IMPORTANT NOTICE  
Unless specifically designated for the automotive market, International Rectifier Corporation and its  
subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and  
other changes to its products and services at any time and to discontinue any product or services without  
notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific  
requirements with regards to product discontinuance and process change notification. All products are sold  
subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.  
IR warrants performance of its hardware products to the specifications applicable at the time of sale in  
accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent  
IR deems necessary to support this warranty. Except where mandated by government requirements, testing  
of all parameters of each product is not necessarily performed.  
IR assumes no liability for applications assistance or customer product design. Customers are responsible  
for their products and applications using IR components. To minimize the risks with customer products and  
applications, customers should provide adequate design and operating safeguards.  
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without  
alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduc-  
tion of this information with alterations is an unfair and deceptive business practice. IR is not responsible or  
liable for such altered documentation. Information of third parties may be subject to additional restrictions.  
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for  
that product or service voids all express and any implied warranties for the associated IR product or service  
and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.  
IR products are not designed, intended, or authorized for use as components in systems intended for surgical  
implant into the body, or in other applications intended to support or sustain life, or in any other application  
in which the failure of the IR product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall  
indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors  
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,  
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized  
use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.  
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of  
Defense, are designed and manufactured to meet DLA military specifications required by certain military,  
aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by  
DLA as military-grade, in applications requiring military grade products, is solely at the Buyer’s own risk and  
that they are solely responsible for compliance with all legal and regulatory requirements in connection with  
such use.  
IR products are neither designed nor intended for use in automotive applications or environments unless the  
specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part  
number including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated  
products in automotive applications, IR will not be responsible for any failure to meet such requirements.  
For technical support, please contact IR’s Technical Assistance Center  
http://www.irf.com/technical-info/  
WORLD HEADQUARTERS:  
101 N. Sepulveda Blvd., El Segundo, California 90245  
Tel: (310) 252-7105  
12  
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