AUIRFR4292TR [INFINEON]
Advanced Process Technology; 先进的工艺技术
| 型号： | AUIRFR4292TR |
| 厂家： | 
Infineon |
| 描述： | Advanced Process Technology |
| 文件： | 总14页 (文件大小：262K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97792
AUTOMOTIVE GRADE
AUIRFR4292
AUIRFU4292
Features
HEXFET® Power MOSFET
●
●
●
●
●
●
●
Advanced Process Technology
D
LowOn-Resistance
175°COperatingTemperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free,RoHSCompliant
V(BR)DSS
RDS(on) typ.
max.
250V
275m
345m
G
S
ID
9.3A
Automotive Qualified *
Description
D
SpecificallydesignedforAutomotiveapplications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistancepersiliconarea. Additionalfeatures
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitiveavalancherating. Thesefeaturescom-
bine to make this design an extremely efficient
andreliabledeviceforuseinAutomotiveapplica-
tions and a wide variety of other applications.
S
S
D
G
G
I-Pak
AUIRFU4292
D-Pak
AUIRFR4292
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
9.3
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
6.6
A
40
PD @TC = 25°C
Power Dissipation
100
0.67
± 20
W
W/°C
V
Linear Derating Factor
VGS
EAS
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
130
mJ
Single Pulse Avalanche Energy Tested Value
Avalanche Current
E
AS (tested )
97
IAR
See Fig.12a, 12b, 15, 16
A
Repetitive Avalanche Energy
EAR
TJ
mJ
Operating Junction and
-55 to + 175
300
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
Typ.
–––
–––
–––
Max.
1.5
Units
R
R
R
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
°C/W
JC
JA
JA
50
110
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
06/18/12
AUIRFR/U4292
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1.0mA
V(BR)DSS
250
–––
–––
0.31
275
–––
–––
–––
–––
–––
–––
–––
–––
345
5.0
V
V(BR)DSS/ TJ Breakdown Voltage Temp. Coefficient
m
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance –––
VGS = 10V, ID = 5.6A
VDS = VGS, ID = 50μA
VDS = 50V, ID = 5.6A
Gate Threshold Voltage
3.0
6.2
V
Forward Transconductance
Drain-to-Source Leakage Current
–––
20
V
IDSS
–––
–––
–––
–––
μA VDS = 250V, VGS = 0V
VDS = 250V, VGS = 0V, TJ = 125°C
nA VGS = 20V
250
100
-100
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = -20V
Dynamic Electrical @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Total Gate Charge
Conditions
Qg
Qgs
Qgd
td(on)
tr
–––
–––
–––
–––
–––
–––
–––
–––
13
4.7
4.8
11
20
ID = 5.6A
nC VDS = 125V
VGS = 10V
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
VDD = 250V
15
ID = 5.6A
td(off)
tf
Turn-Off Delay Time
Fall Time
16
ns RG = 15
VGS = 10V
8.4
4.5
D
S
LD
Internal Drain Inductance
Between lead,
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
Ciss
Input Capacitance
–––
–––
–––
–––
–––
–––
705
71
–––
–––
–––
–––
–––
–––
VGS = 0V
Coss
Output Capacitance
VDS = 25V
Crs s
Reverse Transfer Capacitance
Output Capacitance
20
pF ƒ = 1.0MHz
Coss
600
26
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 200V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 200V
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
65
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
I
S
Continuous Source Current
–––
–––
9.3
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
I
–––
–––
40
SM
S
(Body Diode)
p-n junction diode.
V
Diode Forward Voltage
–––
–––
–––
–––
110
390
1.3
165
585
V
T = 25°C, I = 5.6A, V = 0V
J S GS
SD
t
rr
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns
nC
T = 25°C, I = 5.6A, VDD = 125V
J F
di/dt = 100A/μs
Q
t
rr
Intrinsicturn-ontimeis negligible(turn-onis dominatedbyLS+LD)
on
Notes:
When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 8.1mH
R is measured at TJ approximately 90°C.
RG = 50, IAS = 5.6A, VGS =10V. Part not
recommended for use above this value.
Pulse width 1.0ms; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
from 0 to 80% VDSS
.
ꢀ Limited by TJmax , see Fig.12a, 12b, 15, 16 for
typical repetitive avalanche performance.
This value is determined from sample failure
population, starting TJ = 25°C, L = 8.1mH,
RG = 50, IAS = 5.6A, VGS =10V.
2
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AUIRFR/U4292
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level
is granted by extension of the higher Automotive level.
D-PAK
I-PAK
MSL1
N/A
Moisture Sensitivity Level
Class M1B (+/- 100V)††
Machine Model
AEC-Q101-002
Class H1A (+/- 500V)††
AEC-Q101-001
Human Body Model
ESD
Class C5 (+/- 2000V)††
AEC-Q101-005
Charged Device Model
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Highest passing voltage.
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3
AUIRFR/U4292
100
100
10
1
VGS
15V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
5.5V
VGS
15V
TOP
TOP
10V
8.0V
7.5V
7.0V
6.5V
6.0V
5.5V
10
1
BOTTOM
BOTTOM
5.5V
0.1
0.01
5.5V
60μs PULSE WIDTH
Tj = 175°C
60μs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
16
14
T
= 25°C
J
12
10
8
T
= 175°C
J
10
T = 25°C
J
6
T = 175°C
J
4
V
= 10V
DS
380μs PULSE WIDTH
V
= 50V
DS
2
60μs PULSE WIDTH
1.0
0
4
5
6
7
8
9
10
0
1
2
3
4
5
6
I ,Drain-to-Source Current (A)
D
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
4
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AUIRFR/U4292
100000
10000
1000
100
14.0
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 5.6A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
V
V
V
= 200V
= 125V
= 50V
= C
DS
DS
DS
rss
oss
gd
= C + C
ds
gd
C
iss
C
oss
6.0
C
rss
4.0
10
2.0
0.0
1
0
2
4
6
8
10 12 14 16 18
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
G
Fig 5. Typical Capacitance vs.
Fig 6. Typical Gate Charge vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
100
100
10
1
OPERATION IN THIS AREA
LIMITED BY R (on)
100μsec
DS
1msec
T
= 175°C
J
10
10msec
DC
T
= 25°C
J
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
1.0
0.1
0.4
0.5
V
0.6
0.7
0.8
0.9
1.0
1.1
1
10
, Drain-to-Source Voltage (V)
100
V
, Source-to-Drain Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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5
AUIRFR/U4292
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
8
I
= 9.3A
D
V
= 10V
GS
6
4
2
0
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
25
50
75
100
125
150
175
T
T
, Case Temperature (°C)
J
C
Fig 9. Maximum Drain Current vs.
Fig 10. Normalized On-Resistance
CaseTemperature
vs.Temperature
10
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.01
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRFR/U4292
600
500
400
300
200
100
0
15V
I
D
TOP
1.0A
2.2A
BOTTOM 5.6A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
2
V0GVS
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Q
G
10 V
Q
Q
GD
GS
V
G
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
I
I
I
I
= 50μA
= 250μA
= 1.0mA
= 1.0A
D
D
D
D
Same Type as D.U.T.
50K
.2F
12V
.3F
+
V
DS
D.U.T.
-
V
GS
-75 -50 -25
0
25 50 75 100 125 150 175
3mA
T , Temperature ( °C )
J
I
I
D
G
Current Sampling Resistors
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
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7
AUIRFR/U4292
100
Allowed avalanche Current vs avalanche
Duty Cycle = Single Pulse
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
10
1
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tstart = 150°C.
j = 25°C and
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
140
120
100
80
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
TOP
BOTTOM 1.0% Duty Cycle
= 5.6A
Single Pulse
I
D
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
60
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
40
20
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
0
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
P
D (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs.Temperature
8
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AUIRFR/U4292
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
CircuitLayoutConsiderations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
PulseWidth µs
Duty Factor
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
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9
AUIRFR/U4292
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
PartNumber
AUFR4292
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRFR/U4292
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
PartNumber
AUFU4292
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
AUIRFR/U4292
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
12
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AUIRFR/U4292
Ordering Information
Base part
number
Package Type
Standard Pack
Complete Part Number
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
Quantity
75
2000
3000
3000
75
AUIRFR4292
AUIRFU4292
DPak
IPak
AUIRFR4292
AUIRFR4292TR
AUIRFR4292TRL
AUIRFR4292TRR
AUIRFU4292
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13
AUIRFR/U4292
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its
subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and
other changes to its products and services at any time and to discontinue any product or services without
notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IRs terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IRs standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible
for their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without
alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduc-
tion of this information with alterations is an unfair and deceptive business practice. IR is not responsible
or liable for such altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for
that product or service voids all express and any implied warranties for the associated IR product or service
and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical
implant into the body, or in other applications intended to support or sustain life, or in any other application
in which the failure of the IR product could create a situation where personal injury or death may occur. Should
Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall
indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distribu-
tors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized
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Defense, are designed and manufactured to meet DLA military specifications required by certain military,
aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified
by DLA as military-grade, in applications requiring military grade products, is solely at the Buyers own risk
and that they are solely responsible for compliance with all legal and regulatory requirements in connection
with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless
the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part
number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated
products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/
WORLDHEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
14
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相关型号：
AUIRFR48Z
Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3
INFINEON
AUIRFR48ZTR
Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3
INFINEON
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